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Preis
RN2705JE(TE85L,F) RN2705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
29+0.62 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2707JE(TE85L,F) RN2707JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2708JE(TE85L,F) RN2708JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2709JE(TE85L,F) RN2709JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2710JE(TE85L,F) RN2710JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
30+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2712JE(TE85L,F) RN2712JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2713JE(TE85L,F) RN2713JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2504(TE85L,F) RN2504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2507(TE85L,F) RN2507(TE85L,F) Toshiba Semiconductor and Storage RN2507-09.pdf Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
30+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN2510(TE85L,F) RN2510(TE85L,F) Toshiba Semiconductor and Storage RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510 Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN2511(TE85L,F) RN2511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2510 Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4981FE(TE85L,F) RN4981FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4982FE,LF(CT RN4982FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19043&prodName=RN4982FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3250 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4983FE,LF(CT RN4983FE,LF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
61+0.29 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN4984FE,LF(CB RN4984FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4985FE(TE85L,F) RN4985FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4985FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE(T5L,F,T) RN4987FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987FE Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE(TE85L,F) RN4988FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE(TE85L,F) RN4989FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4990FE(T5L,F,T) RN4990FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4991FE(TE85L,F) RN4991FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4991FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1902FE,LF(CT RN1902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE(TE85L,F) RN1903FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1904FE,LF(CT RN1904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
42+0.43 EUR
100+0.24 EUR
500+0.16 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE(TE85L,F) RN1905FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905FE Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1906FE(T5L,F,T) RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
RN1908FE(TE85L,F) RN1908FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1909FE(TE85L,F) RN1909FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
40+0.44 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
RN1910FE(T5L,F,T) RN1910FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1911FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1967FE(TE85L,F) RN1967FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1969FE(TE85L,F) RN1969FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1970FE(TE85L,F) RN1970FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1971FE(TE85L,F) RN1971FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1601(TE85L,F) RN1601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2602 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
30+0.60 EUR
100+0.34 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN1604(TE85L,F) RN1604(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1608(TE85L,F) RN1608(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 2758 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1609(TE85L,F) RN1609(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1610(TE85L,F) RN1610(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SM6
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1611(TE85L,F) RN1611(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
27+0.65 EUR
100+0.37 EUR
500+0.24 EUR
1000+0.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
RN1673(TE85L,F) RN1673(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1673 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905(T5L,F,T) RN1905(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1908(T5L,F,T) RN1908(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
45+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
RN1909(T5L,F,T) RN1909(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1907 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1910,LF(CT RN1910,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1910 Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1911(T5L,F,T) RN1911(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1910 Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1961(TE85L,F) RN1961(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+0.53 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1963(TE85L,F) RN1963(TE85L,F) Toshiba Semiconductor and Storage RN1961_datasheet_en_20191118.pdf?did=18830&prodName=RN1961 Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN1965(TE85L,F) RN1965(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1965 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1968(TE85L,F) RN1968(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18832&prodName=RN1968 Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN1970(TE85L,F) RN1970(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1973(TE85L,F) RN1973(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1973 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN47A3JE(TE85L,F) RN47A3JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN47A3JE Description: TRANS NPN/PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2901FE(TE85L,F) RN2901FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
38+0.47 EUR
100+0.26 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
RN2902FE(T5L,F,T) RN2902FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903FE(TE85L,F) RN2903FE(TE85L,F) Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3450 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
79+0.22 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE(T5L,F,T) RN2904FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE(TE85L,F) RN2906FE(TE85L,F) Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN2705JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.62 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2707JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2708JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2709JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2710JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
30+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 23
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RN2711JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2712JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2712JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2713JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2713JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN2504(TE85L,F) docget.jsp?did=18887&prodName=RN2501
RN2504(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.63 EUR
100+0.36 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RN2507(TE85L,F) RN2507-09.pdf
RN2507(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
30+0.59 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN2510(TE85L,F) RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510
RN2510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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RN2511(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2510
RN2511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4981FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4981FE
RN4981FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
RN4982FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 3250 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4983FE,LF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
61+0.29 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 40
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RN4984FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4984FE
RN4984FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4985FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4985FE
RN4985FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4987FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4987FE
RN4987FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4988FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4988FE
RN4988FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4989FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4989FE
RN4989FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4990FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990FE
RN4990FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4991FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4991FE
RN4991FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1902FE,LF(CT docget.jsp?did=19130&prodName=RN1902FE
RN1902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1903FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1904FE,LF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
42+0.43 EUR
100+0.24 EUR
500+0.16 EUR
Mindestbestellmenge: 32
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RN1905FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1905FE
RN1905FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN ES6 50V 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1906FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1906FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE
RN1907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
RN1908FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1908FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1909FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1909FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
40+0.44 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 31
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RN1910FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1911FE
RN1910FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1967FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1967FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1968FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1968FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1969FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1969FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1970FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1970FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1971FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1971FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1601(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1601(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
30+0.60 EUR
100+0.34 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
RN1604(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1604(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1608(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1608(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 2758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1609(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1609(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1610(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1610(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SM6
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1611(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1611(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
27+0.65 EUR
100+0.37 EUR
500+0.24 EUR
1000+0.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
RN1673(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1673
RN1673(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1908(T5L,F,T) docget.jsp?did=18826&prodName=RN1908
RN1908(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
45+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
RN1909(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1907
RN1909(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1910,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1910
RN1910,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1911(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1910
RN1911(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1961(TE85L,F)
RN1961(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
34+0.53 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RN1963(TE85L,F) RN1961_datasheet_en_20191118.pdf?did=18830&prodName=RN1961
RN1963(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN1965(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1965
RN1965(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1968(TE85L,F) docget.jsp?did=18832&prodName=RN1968
RN1968(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
RN1970(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970
RN1970(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1973(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1973
RN1973(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN47A3JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN47A3JE
RN47A3JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2901FE(TE85L,F) docget.jsp?did=19092&prodName=RN2906FE
RN2901FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
38+0.47 EUR
100+0.26 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
RN2902FE(T5L,F,T) docget.jsp?did=19092&prodName=RN2906FE
RN2902FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903FE(TE85L,F) RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2903FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.22 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE(T5L,F,T) docget.jsp?did=19092&prodName=RN2906FE
RN2904FE(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906FE(TE85L,F) RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2906FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
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