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HN1B01FU-Y(L,F,T) HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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HN1B04FU-Y(T5L,F,T HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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RN1701JE(TE85L,F) RN1701JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
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2SC5096-O,LF 2SC5096-O,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5096 Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
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2SC5096-R,LF 2SC5096-R,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 1.4dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SSM
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Frequency - Transition: 10GHz
Produkt ist nicht verfügbar
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MT3S20P(TE12L,F) MT3S20P(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=2066&prodName=MT3S20P Description: RF TRANS NPN 12V 7GHZ PW-MINI
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2SC5066-O,LF 2SC5066-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5086-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5065-O(TE85L,F) 2SC5065-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5085-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT3S15TU(TE85L) MT3S15TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S15TU Description: TRANS RF NPN 6V 1GHZ UFM
Produkt ist nicht verfügbar
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TC7SET86FU(T5L,F,T TC7SET86FU(T5L,F,T Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP USV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Obsolete
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Produkt ist nicht verfügbar
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1SS307(TE85L,F) 1SS307(TE85L,F) Toshiba Semiconductor and Storage 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307 Description: DIODE GEN PURP 30V 100MA S-MINI
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
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RN1503(TE85L,F) RN1503(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1503 Description: TRANS 2NPN PREBIAS 0.3W SMV
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RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1510 Description: TRANS 2NPN PREBIAS 0.3W SMV
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RN1907,LF(CT RN1907,LF(CT Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1954-A(TE85L,F) 2SA1954-A(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2107ACT(TPL3) RN2107ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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MT3S16U(TE85L,F) MT3S16U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S16U Description: TRANS RF NPN 5V 1GHZ USM
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2SC5086-Y,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC75S101FE,LM(T TC75S101FE,LM(T Toshiba Semiconductor and Storage docget.jsp?did=11316&prodName=TC75S101F Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
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TC74LCX273FT-ELK TC74LCX273FT-ELK Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
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HN1D01FE(TE85L,F) HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1D02FE,LF HN1D02FE,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN1D02FE Description: DIODE ARRAY GP 80V 100MA ES6
Produkt ist nicht verfügbar
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RN1504(TE85L,F) RN1504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1504 Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
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RN1702JE(TE85L,F) RN1702JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
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RN1111,LF(CT RN1111,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18754&prodName=RN1110 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
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2SA1162-O,LF 2SA1162-O,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC5087R(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
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RN2903(T5L,F,T) RN2903(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2903 Description: TRAN DUAL PNP US6 -50V -100A
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TC75S59FE(TE85L,F) TC75S59FE(TE85L,F) Toshiba Semiconductor and Storage Description: IC COMPARATOR 1 GEN PUR ESV
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1603(TE85L,F) RN1603(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1606(TE85L,F) RN1606(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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RN1409(TE85L,F) RN1409(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1409 Description: TRAN NPN S-MINI 50V 100A
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RN1414,LF(B RN1414,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1414 Description: TRANS PREBIAS NPN 0.2W S-MINI
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TC75S57F,LF TC75S57F,LF Toshiba Semiconductor and Storage TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1D03FU,LF HN1D03FU,LF Toshiba Semiconductor and Storage HN1D03FU_datasheet_en_20210625.pdf?did=3661&prodName=HN1D03FU Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
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RN2706JE(TE85L,F) RN2706JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
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RN1901,LF(CT RN1901,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
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3000+0.067 EUR
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RN4902FE(TE85L,F) RN4902FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4902FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2702JE(TE85L,F) RN2702JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2701JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
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RN4905FE,LF(CB RN4905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4905FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 8000 Stücke:
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HN1C03F-B(TE85L,F) HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19154&prodName=HN1C03F Description: TRANS 2NPN 20V 0.3A SM6
Produkt ist nicht verfügbar
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2SA1586-GR,LF 2SA1586-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
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TC75S56F,LF TC75S56F,LF Toshiba Semiconductor and Storage TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F Description: IC COMPARATOR 1 GEN PUR SMV
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
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3000+0.23 EUR
6000+0.21 EUR
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1SV307(TPH3,F) 1SV307(TPH3,F) Toshiba Semiconductor and Storage 1SV307_datasheet_en_20140301.pdf?did=2834&prodName=1SV307 Description: RF DIODE PIN 30V USC
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN2501(TE85L,F) RN2501(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
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RN2905FE,LF(CB RN2905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2901FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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HN2C01FU-GR(T5L,F) HN2C01FU-GR(T5L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2C01FU Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 3000 Stücke:
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RN4906FE,LF(CB RN4906FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
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2SC2714-O(TE85L,F) 2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ S MINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC5108-Y,LF 2SC5108-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=17697&prodName=2SC5108 Description: RF TRANS NPN 10V 6GHZ SSM
Produkt ist nicht verfügbar
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RN1607(TE85L,F) RN1607(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.13 EUR
6000+0.11 EUR
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2SA1162-Y,LF 2SA1162-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 18000 Stücke:
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3000+0.05 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.038 EUR
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RN1502(TE85L,F) RN1502(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18803&prodName=RN1503 Description: TRANS 2NPN PREBIAS 0.3W SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.1 EUR
30000+0.096 EUR
Mindestbestellmenge: 3000 Stücke
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RN4605(TE85L,F) RN4605(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4605 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
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TC7SET17FU,LF TC7SET17FU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET17F Description: IC GATE SMV L-MOS USV
Produkt ist nicht verfügbar
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RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC75W57FU,LF TC75W57FU,LF Toshiba Semiconductor and Storage TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU Description: IC COMPARATOR 2 GEN PUR 8SSOP
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Produkt ist nicht verfügbar
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HN1B01FU-Y(L,F,T) docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-Y(L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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HN1B04FU-Y(T5L,F,T docget.jsp?did=19150&prodName=HN1B04FU
HN1B04FU-Y(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
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RN1701JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPreis
4000+0.12 EUR
Mindestbestellmenge: 4000 Stücke
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2SC5096-O,LF docget.jsp?type=datasheet&lang=en&pid=2SC5096
2SC5096-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 10V 1GHZ SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SC5096-R,LF
2SC5096-R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 1.4dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SSM
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Frequency - Transition: 10GHz
Produkt ist nicht verfügbar
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MT3S20P(TE12L,F) docget.jsp?did=2066&prodName=MT3S20P
MT3S20P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ PW-MINI
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2SC5066-O,LF
2SC5066-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5086-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5065-O(TE85L,F)
2SC5065-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5085-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5088-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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MT3S15TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=MT3S15TU
MT3S15TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 6V 1GHZ UFM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TC7SET86FU(T5L,F,T
TC7SET86FU(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP USV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Obsolete
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Produkt ist nicht verfügbar
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1SS307(TE85L,F) 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307
1SS307(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 30V 100MA S-MINI
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.16 EUR
6000+0.15 EUR
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RN1503(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1503
RN1503(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1510(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1510
RN1510(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
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Lieferzeit 10-14 Tag (e)
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RN1907,LF(CT
RN1907,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SA1954-A(TE85L,F)
2SA1954-A(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2107ACT(TPL3)
RN2107ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Supplier Device Package: CST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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MT3S16U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=MT3S16U
MT3S16U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 5V 1GHZ USM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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2SC5086-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
Produkt ist nicht verfügbar
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TC75S101FE,LM(T docget.jsp?did=11316&prodName=TC75S101F
TC75S101FE,LM(T
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TC74LCX273FT-ELK docget.jsp?type=datasheet&lang=en&pid=TC74LCX273FT
TC74LCX273FT-ELK
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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HN1D01FE(TE85L,F) HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE
HN1D01FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN1D02FE,LF docget.jsp?type=datasheet&lang=en&pid=HN1D02FE
HN1D02FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1504(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1504
RN1504(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1702JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1702JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1111,LF(CT docget.jsp?did=18754&prodName=RN1110
RN1111,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SA1162-O,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SC5087R(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2903
RN2903(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP US6 -50V -100A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TC75S59FE(TE85L,F)
TC75S59FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1603(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1601
RN1603(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1606(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1606(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1409(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1409
RN1409(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1414,LF(B docget.jsp?type=datasheet&lang=en&pid=RN1414
RN1414,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TC75S57F,LF TC75S57F_datasheet_en_20190911.pdf?did=20998&prodName=TC75S57F
TC75S57F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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HN1D03FU,LF HN1D03FU_datasheet_en_20210625.pdf?did=3661&prodName=HN1D03FU
HN1D03FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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RN2706JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2706JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN1901,LF(CT RN190x.pdf
RN1901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.067 EUR
Mindestbestellmenge: 3000 Stücke
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RN4902FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4902FE
RN4902FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RN2702JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2701JE
RN2702JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4905FE
RN4905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C03F-B(TE85L,F) docget.jsp?did=19154&prodName=HN1C03F
HN1C03F-B(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SA1586-GR,LF docget.jsp?did=19170&prodName=2SA1586
2SA1586-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.05 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC75S56F,LF TC75S56F_datasheet_en_20190911.pdf?did=20995&prodName=TC75S56F
TC75S56F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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1SV307(TPH3,F) 1SV307_datasheet_en_20140301.pdf?did=2834&prodName=1SV307
1SV307(TPH3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V USC
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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RN2501(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2501
RN2501(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2901FE
RN2905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN2C01FU-GR(T5L,F) docget.jsp?type=datasheet&lang=en&pid=HN2C01FU
HN2C01FU-GR(T5L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN4906FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4906FE
RN4906FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
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2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SC5108-Y,LF docget.jsp?did=17697&prodName=2SC5108
2SC5108-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1607(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1607(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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2SA1162-Y,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.05 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.038 EUR
Mindestbestellmenge: 3000 Stücke
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RN1502(TE85L,F) docget.jsp?did=18803&prodName=RN1503
RN1502(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.1 EUR
30000+0.096 EUR
Mindestbestellmenge: 3000 Stücke
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RN4605(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4605
RN4605(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TC7SET17FU,LF docget.jsp?type=datasheet&lang=en&pid=TC7SET17F
TC7SET17FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
Produkt ist nicht verfügbar
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RN2102,LF(CT docget.jsp?did=18841&prodName=RN2101
RN2102,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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TC75W57FU,LF TC75W57FU_datasheet_en_20140301.pdf?did=21015&prodName=TC75W57FU
TC75W57FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
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