Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13612) > Seite 68 nach 227

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2SA1298-Y,LF 2SA1298-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19261&prodName=2SA1298 Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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1SS412(TE85L,F) 1SS412(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=1SS412 Description: DIODE ARRAY GP 80V 100MA USM
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1SS362FV,L3F 1SS362FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=22527&prodName=1SS362FV Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS361FV,L3F 1SS361FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=4394&prodName=1SS361FV Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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TC7SPN3125TU,LF TC7SPN3125TU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SPN3125TU Description: BUS BUFFER UNI UF6
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TC7LX1102WBG(EL,AH Toshiba Semiconductor and Storage Description: IC TRANSLTR BIDIRECTIONAL 8WCSP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 200Mbps
Supplier Device Package: 8-WCSP (0.80x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.2 V ~ 3.6 V
Number of Circuits: 1
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TC75S56FE,LM TC75S56FE,LM Toshiba Semiconductor and Storage Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 18mA @ 5V
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TC75S58FE(TE85L,F) TC75S58FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75S58FE Description: CMOS TYPE OP AMP ESV
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TC75W56FU,LF TC75W56FU,LF Toshiba Semiconductor and Storage docget.jsp?did=21013&prodName=TC75W56FU Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
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TC75W58FU,LF TC75W58FU,LF Toshiba Semiconductor and Storage docget.jsp?did=21017&prodName=TC75W58FU Description: IC COMP GP CMOS DUAL SM8
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TC75W59FU,LF TC75W59FU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75W59FK Description: CMOS TYPE OP AMP IC DUAL SM8
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TC75W54FK(TE85L,F) TC75W54FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21024&prodName=TC75W54FU Description: IC OPAMP GP 2 CIRCUIT US8
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TC75W55FK(TE85L,F) TC75W55FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21026&prodName=TC75W55FU Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 20µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 160 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
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TC75W58FK,LF TC75W58FK,LF Toshiba Semiconductor and Storage TC75W58FU_datasheet_en_20140301.pdf?did=21017&prodName=TC75W58FU Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
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TC75W59FK(TE85L,F) TC75W59FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21020&prodName=TC75W59FU Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
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TC75S59F,LF TC75S59F,LF Toshiba Semiconductor and Storage TC75S59F_datasheet_en_20190911.pdf?did=21002&prodName=TC75S59F Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
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TC75S59FU(TE85L,F) TC75S59FU(TE85L,F) Toshiba Semiconductor and Storage TC75S59F_datasheet_en_20190911.pdf?did=21002&prodName=TC75S59F Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
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TC7SPN3125CFC(T5L) TC7SPN3125CFC(T5L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SPN3125CFC Description: DUAL SUPPLY BUS BUFFER UNI CST6C
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2SC4915-O,LF 2SC4915-O,LF Toshiba Semiconductor and Storage docget.jsp?did=17642&prodName=2SC4915 Description: RF TRANS NPN 30V 550MHZ SSM
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2SC4915-Y,LF 2SC4915-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=17642&prodName=2SC4915 Description: RF TRANS NPN 30V 550MHZ SSM
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74VHC541FT 74VHC541FT Toshiba Semiconductor and Storage docget.jsp?did=13948&prodName=74VHC541FT Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHCT541AFT 74VHCT541AFT Toshiba Semiconductor and Storage docget.jsp?did=13951&prodName=74VHCT541AFT Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHC244FT 74VHC244FT Toshiba Semiconductor and Storage docget.jsp?did=13947&prodName=74VHC244FT Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHCT244AFT 74VHCT244AFT Toshiba Semiconductor and Storage docget.jsp?did=14049&prodName=74VHCT244AFT Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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TC7SET34FU(T5L,F,T TC7SET34FU(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET34FU Description: IC BUFFER NON-INVERTER USV
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TC7SP3125CFC(TE85L TC7SP3125CFC(TE85L Toshiba Semiconductor and Storage docget.jsp?did=11586&prodName=TC7SP3125CFC Description: IC TRNSLTR UNIDIRECTIONAL CST6C
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74VHC245FT 74VHC245FT Toshiba Semiconductor and Storage docget.jsp?did=13895&prodName=74VHC245FT Description: IC TXRX 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHCT245AFT 74VHCT245AFT Toshiba Semiconductor and Storage docget.jsp?did=13949&prodName=74VHCT245AFT Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
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74VHC574FT 74VHC574FT Toshiba Semiconductor and Storage docget.jsp?did=14038&prodName=74VHC574FT Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
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74VHCT574AFT(BE) 74VHCT574AFT(BE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCT574AFT Description: IC D-TYPE POS TRG SNGL 20TSSOP
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TC7SH34FU(T5L,F,T) TC7SH34FU(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH34FU Description: IC GATE L-MOS USV
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74VHC540FT 74VHC540FT Toshiba Semiconductor and Storage 74VHC540FT_datasheet_en_20170222.pdf?did=13948&prodName=74VHC540FT Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHCT540AFT 74VHCT540AFT Toshiba Semiconductor and Storage docget.jsp?did=13951&prodName=74VHCT540AFT Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHC240FT 74VHC240FT Toshiba Semiconductor and Storage docget.jsp?did=13947&prodName=74VHC240FT Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1022 Stücke:
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28+0.75 EUR
40+0.54 EUR
45+0.48 EUR
100+0.4 EUR
250+0.38 EUR
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1000+0.35 EUR
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74VHCT240AFT(BE) 74VHCT240AFT(BE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCT240AFT Description: IC INVERTER DUAL 4-INPUT 20TSSOP
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74VHC573FT 74VHC573FT Toshiba Semiconductor and Storage docget.jsp?did=14036&prodName=74VHC573FT Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1404 Stücke:
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36+0.6 EUR
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250+0.43 EUR
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74VHCT573AFT(BE) 74VHCT573AFT(BE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
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TC7SP3125TU,LF TC7SP3125TU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SP3125TU Description: SUPPLY BUS BUFFER UNI UF6
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JDP4P02AT(TE85L) JDP4P02AT(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDP4P02AT Description: SWITCHING DIODE 30V INDEPENDENT
Produkt ist nicht verfügbar
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1SS300,LF 1SS300,LF Toshiba Semiconductor and Storage 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300 Description: DIODE ARRAY GP 80V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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102+0.2 EUR
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HN1D01F(TE85L,F) HN1D01F(TE85L,F) Toshiba Semiconductor and Storage HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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27+0.8 EUR
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1SS301,LF 1SS301,LF Toshiba Semiconductor and Storage docget.jsp?did=3294&prodName=1SS301 Description: DIODE ARRAY GP 80V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5820 Stücke:
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96+0.21 EUR
156+0.13 EUR
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HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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HN1D02FU(T5L,F,T) HN1D02FU(T5L,F,T) Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 8 Stücke:
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RN1703JE(TE85L,F) RN1703JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
auf Bestellung 1813 Stücke:
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31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.2 EUR
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RN1704JE(TE85L,F) RN1704JE(TE85L,F) Toshiba Semiconductor and Storage RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 7 Stücke:
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RN1705JE(TE85L,F) RN1705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 775 Stücke:
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23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
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RN1508(TE85L,F) RN1508(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
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RN1509(TE85L,F) RN1509(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
31+0.69 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
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RN1511(TE85L,F) RN1511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18807&prodName=RN1510 Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMV
auf Bestellung 4175 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3695 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2703JE(TE85L,F) RN2703JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
auf Bestellung 31420 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
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RN2704JE(TE85L,F) RN2704JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3996 Stücke:
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23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
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RN2705JE(TE85L,F) RN2705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.74 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2707JE(TE85L,F) RN2707JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
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RN2708JE(TE85L,F) RN2708JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2709JE(TE85L,F) RN2709JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
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RN2710JE(TE85L,F) RN2710JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23 Stücke
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RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
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RN2712JE(TE85L,F) RN2712JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
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2SA1298-Y,LF docget.jsp?did=19261&prodName=2SA1298
2SA1298-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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1SS412(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=1SS412
1SS412(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Produkt ist nicht verfügbar
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1SS362FV,L3F docget.jsp?did=22527&prodName=1SS362FV
1SS362FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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8000+0.065 EUR
24000+0.056 EUR
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1SS361FV,L3F docget.jsp?did=4394&prodName=1SS361FV
1SS361FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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TC7SPN3125TU,LF docget.jsp?type=datasheet&lang=en&pid=TC7SPN3125TU
TC7SPN3125TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: BUS BUFFER UNI UF6
auf Bestellung 2855 Stücke:
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TC7LX1102WBG(EL,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR BIDIRECTIONAL 8WCSP
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 200Mbps
Supplier Device Package: 8-WCSP (0.80x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.2 V ~ 3.6 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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TC75S56FE,LM
TC75S56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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TC75S58FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TC75S58FE
TC75S58FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS TYPE OP AMP ESV
Produkt ist nicht verfügbar
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TC75W56FU,LF docget.jsp?did=21013&prodName=TC75W56FU
TC75W56FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
auf Bestellung 5380 Stücke:
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40+0.52 EUR
57+0.37 EUR
64+0.33 EUR
100+0.29 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
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TC75W58FU,LF docget.jsp?did=21017&prodName=TC75W58FU
TC75W58FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMP GP CMOS DUAL SM8
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TC75W59FU,LF docget.jsp?type=datasheet&lang=en&pid=TC75W59FK
TC75W59FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: CMOS TYPE OP AMP IC DUAL SM8
auf Bestellung 2448 Stücke:
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TC75W54FK(TE85L,F) docget.jsp?did=21024&prodName=TC75W54FU
TC75W54FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT US8
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TC75W55FK(TE85L,F) docget.jsp?did=21026&prodName=TC75W55FU
TC75W55FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 20µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 160 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
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17+1.3 EUR
19+1.14 EUR
25+1.07 EUR
100+0.87 EUR
250+0.81 EUR
500+0.69 EUR
1000+0.55 EUR
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TC75W58FK,LF TC75W58FU_datasheet_en_20140301.pdf?did=21017&prodName=TC75W58FU
TC75W58FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 3000 Stücke:
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17+1.3 EUR
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TC75W59FK(TE85L,F) docget.jsp?did=21020&prodName=TC75W59FU
TC75W59FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 5828 Stücke:
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16+1.34 EUR
18+1.18 EUR
25+1.11 EUR
100+0.9 EUR
250+0.83 EUR
500+0.71 EUR
1000+0.57 EUR
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TC75S59F,LF TC75S59F_datasheet_en_20190911.pdf?did=21002&prodName=TC75S59F
TC75S59F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 95 Stücke:
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21+1 EUR
26+0.82 EUR
28+0.75 EUR
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TC75S59FU(TE85L,F) TC75S59F_datasheet_en_20190911.pdf?did=21002&prodName=TC75S59F
TC75S59FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
auf Bestellung 3652 Stücke:
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26+0.82 EUR
31+0.7 EUR
33+0.65 EUR
100+0.52 EUR
250+0.49 EUR
500+0.4 EUR
1000+0.32 EUR
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TC7SPN3125CFC(T5L) docget.jsp?type=datasheet&lang=en&pid=TC7SPN3125CFC
TC7SPN3125CFC(T5L)
Hersteller: Toshiba Semiconductor and Storage
Description: DUAL SUPPLY BUS BUFFER UNI CST6C
Produkt ist nicht verfügbar
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2SC4915-O,LF docget.jsp?did=17642&prodName=2SC4915
2SC4915-O,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SSM
Produkt ist nicht verfügbar
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2SC4915-Y,LF docget.jsp?did=17642&prodName=2SC4915
2SC4915-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SSM
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74VHC541FT docget.jsp?did=13948&prodName=74VHC541FT
74VHC541FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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28+0.75 EUR
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74VHCT541AFT docget.jsp?did=13951&prodName=74VHCT541AFT
74VHCT541AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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25+0.83 EUR
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74VHC244FT docget.jsp?did=13947&prodName=74VHC244FT
74VHC244FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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74VHCT244AFT docget.jsp?did=14049&prodName=74VHCT244AFT
74VHCT244AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 22301 Stücke:
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29+0.74 EUR
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TC7SET34FU(T5L,F,T docget.jsp?type=datasheet&lang=en&pid=TC7SET34FU
TC7SET34FU(T5L,F,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTER USV
Produkt ist nicht verfügbar
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TC7SP3125CFC(TE85L docget.jsp?did=11586&prodName=TC7SP3125CFC
TC7SP3125CFC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRNSLTR UNIDIRECTIONAL CST6C
Produkt ist nicht verfügbar
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74VHC245FT docget.jsp?did=13895&prodName=74VHC245FT
74VHC245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 7967 Stücke:
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39+0.55 EUR
56+0.38 EUR
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74VHCT245AFT docget.jsp?did=13949&prodName=74VHCT245AFT
74VHCT245AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 11854 Stücke:
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28+0.75 EUR
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74VHC574FT docget.jsp?did=14038&prodName=74VHC574FT
74VHC574FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 17838 Stücke:
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29+0.74 EUR
41+0.51 EUR
46+0.46 EUR
100+0.39 EUR
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74VHCT574AFT(BE) docget.jsp?type=datasheet&lang=en&pid=74VHCT574AFT
74VHCT574AFT(BE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
auf Bestellung 3011 Stücke:
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TC7SH34FU(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TC7SH34FU
TC7SH34FU(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Produkt ist nicht verfügbar
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74VHC540FT 74VHC540FT_datasheet_en_20170222.pdf?did=13948&prodName=74VHC540FT
74VHC540FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 116335 Stücke:
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13+1.63 EUR
22+0.99 EUR
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74VHCT540AFT docget.jsp?did=13951&prodName=74VHCT540AFT
74VHCT540AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 4859 Stücke:
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AnzahlPrivatkunde
27+0.8 EUR
39+0.55 EUR
43+0.49 EUR
100+0.43 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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74VHC240FT docget.jsp?did=13947&prodName=74VHC240FT
74VHC240FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1022 Stücke:
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28+0.75 EUR
40+0.54 EUR
45+0.48 EUR
100+0.4 EUR
250+0.38 EUR
500+0.36 EUR
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74VHCT240AFT(BE) docget.jsp?type=datasheet&lang=en&pid=74VHCT240AFT
74VHCT240AFT(BE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
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74VHC573FT docget.jsp?did=14036&prodName=74VHC573FT
74VHC573FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1404 Stücke:
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25+0.83 EUR
36+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
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74VHCT573AFT(BE) docget.jsp?type=datasheet&lang=en&pid=74VHCT573AFT
74VHCT573AFT(BE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
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TC7SP3125TU,LF docget.jsp?type=datasheet&lang=en&pid=TC7SP3125TU
TC7SP3125TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: SUPPLY BUS BUFFER UNI UF6
auf Bestellung 1461 Stücke:
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JDP4P02AT(TE85L) docget.jsp?type=datasheet&lang=en&pid=JDP4P02AT
JDP4P02AT(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: SWITCHING DIODE 30V INDEPENDENT
Produkt ist nicht verfügbar
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1SS300,LF 1SS300_datasheet_en_20210625.pdf?did=3292&prodName=1SS300
1SS300,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
102+0.2 EUR
164+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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HN1D01F(TE85L,F) HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F
HN1D01F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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27+0.8 EUR
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1SS301,LF docget.jsp?did=3294&prodName=1SS301
1SS301,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5820 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
96+0.21 EUR
156+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
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HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
HN1D02F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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HN1D02FU(T5L,F,T) HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1703JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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RN1704JE(TE85L,F) RN1701JE_datasheet_en_20140301.pdf?did=19121&prodName=RN1701JE
RN1704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1705JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
31+0.68 EUR
100+0.38 EUR
500+0.25 EUR
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RN1508(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1508(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
46+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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RN1509(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1509(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
31+0.69 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
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RN1511(TE85L,F) docget.jsp?did=18807&prodName=RN1510
RN1511(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMV
auf Bestellung 4175 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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RN2701JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2701JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2703JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2703JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
auf Bestellung 31420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
500+0.26 EUR
1000+0.2 EUR
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RN2704JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2704JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
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RN2705JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2705JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.74 EUR
100+0.42 EUR
500+0.27 EUR
1000+0.21 EUR
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RN2707JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
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RN2708JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
29+0.75 EUR
100+0.43 EUR
500+0.29 EUR
1000+0.21 EUR
2000+0.19 EUR
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RN2709JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
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RN2710JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2710JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.39 EUR
500+0.26 EUR
1000+0.2 EUR
2000+0.18 EUR
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RN2711JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
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RN2712JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2712JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.18 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH