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BZX584C15-G3-08 BZX584C15-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 15V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZX584C2V2-G3-08 BZX584C2V2-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 2.2V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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VS-60EPU06L-N3 VS-60EPU06L-N3 Vishay General Semiconductor - Diodes Division vs-60epu06l-n3.pdf Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
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VS-30EPH06L-N3 VS-30EPH06L-N3 Vishay General Semiconductor - Diodes Division vs-30eph06l-n3.pdf Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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V1FM15-M3/H V1FM15-M3/H Vishay General Semiconductor - Diodes Division v1fm15.pdf Description: DIODE SCHOTTKY 150V 1A DO219AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VS-50WQ06FNTR-M3 VS-50WQ06FNTR-M3 Vishay General Semiconductor - Diodes Division 50wq06fn.pdf Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
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VS-MBRS130L-M3/5BT VS-MBRS130L-M3/5BT Vishay General Semiconductor - Diodes Division vsmbrs130lm3.pdf Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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VS-10BQ060-M3/5BT VS-10BQ060-M3/5BT Vishay General Semiconductor - Diodes Division vs-10bq060m.pdf Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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VS-6CWQ10FNTR-M3 VS-6CWQ10FNTR-M3 Vishay General Semiconductor - Diodes Division 6cwq10fn.pdf Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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BZT03C27-TR BZT03C27-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 22VWM 38.1VC SOD57
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
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BZG03C10-M3-18 BZG03C10-M3-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 10V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
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VS-30BQ100HM3/9AT VS-30BQ100HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq100hm3.pdf Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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VS-10MQ060-M3/5AT VS-10MQ060-M3/5AT Vishay General Semiconductor - Diodes Division vs-10mq060m.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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VS-12CWQ03FNTR-M3 VS-12CWQ03FNTR-M3 Vishay General Semiconductor - Diodes Division vs-12cwq03f.pdf Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 30 V
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VS-HFA08SD60STR-M3 VS-HFA08SD60STR-M3 Vishay General Semiconductor - Diodes Division vs-hfa08sd6.pdf Description: DIODE STANDARD 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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1.5KE27AHE3_A/C 1.5KE27AHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 23.1VWM 37.5VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-10MQ040-M3/5AT VS-10MQ040-M3/5AT Vishay General Semiconductor - Diodes Division vs-10mq040m.pdf Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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1N4151W-E3-08 1N4151W-E3-08 Vishay General Semiconductor - Diodes Division 1n4151w_a.pdf Description: DIODE STANDARD 50V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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VS-50WQ03FNTR-M3 VS-50WQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 50wq03fn.pdf Description: DIODE SCHOTTKY 30V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
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VS-8EWH02FNTR-M3 VS-8EWH02FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewh02fn.pdf Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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VS-30BQ060-M3/9AT VS-30BQ060-M3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060m.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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VS-5ECU06-M3/9AT VS-5ECU06-M3/9AT Vishay General Semiconductor - Diodes Division vs-5ecu06-m3.pdf Description: DIODE GEN PURP 600V 5A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 43 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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VS-MBRS340-M3/9AT VS-MBRS340-M3/9AT Vishay General Semiconductor - Diodes Division vs-mbrs340m3.pdf Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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VS-10BQ100-M3/5BT VS-10BQ100-M3/5BT Vishay General Semiconductor - Diodes Division vs-10bq100m.pdf Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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VS-6CWQ03FNTR-M3 VS-6CWQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 6cwq03fn.pdf Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VS-30BQ060HM3/9AT VS-30BQ060HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq060hm3.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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VS-30WQ03FNTR-M3 VS-30WQ03FNTR-M3 Vishay General Semiconductor - Diodes Division 30wq03fn.pdf Description: DIODE SCHOTTKY 30V 3.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VCAN16A2-03GHE3-08 Vishay General Semiconductor - Diodes Division vcan16a2-03g.pdf Description: TVS DIODE 16VWM 28VC SOT323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 2
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 15.5pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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VCAN16A2-03GHE3-08 Vishay General Semiconductor - Diodes Division vcan16a2-03g.pdf Description: TVS DIODE 16VWM 28VC SOT323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 2
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 15.5pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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VS-32CTQ030STRL-M3 VS-32CTQ030STRL-M3 Vishay General Semiconductor - Diodes Division vs-32ctqs-m3series.pdf Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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BYW52-TR BYW52-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BZT03C180-TR BZT03C180-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 180V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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BZT03C47-TR BZT03C47-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 47V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
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BZT03C51-TR BZT03C51-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 43VWM 70.8VC SOD57
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZT03C43-TR BZT03C43-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZT03C82-TR BZT03C82-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 82V 1.3W SOD57
Tolerance: ±6.1%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
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BZT03C36-TR BZT03C36-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 36V 1.3W SOD57
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZT03C130-TR BZT03C130-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 110VWM 185VC SOD57
Tolerance: ±6.54%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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VS-15MQ040-M3/5AT VS-15MQ040-M3/5AT Vishay General Semiconductor - Diodes Division vs-15mq040m.pdf Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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BZX84C3V3-E3-18 BZX84C3V3-E3-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5222B-TR 1N5222B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4001-E3/53 1N4001-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N5233B-TAP 1N5233B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1N5225B-TAP 1N5225B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3V 500MW DO204AH
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
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100+0.21 EUR
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VS-42CTQ030STRL-M3 VS-42CTQ030STRL-M3 Vishay General Semiconductor - Diodes Division vs-42ctq030s-m3.pdf Description: DIODE ARR SCHOTT 30V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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VS-16CTQ100STRL-M3 VS-16CTQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARR SCHOTT 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Qualification: AEC-Q101
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VS-8TQ100STRL-M3 VS-8TQ100STRL-M3 Vishay General Semiconductor - Diodes Division vs-8tqs-m3.pdf Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-10ETS08STRL-M3 VS-10ETS08STRL-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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RS07D-M-08 RS07D-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE GP 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RS07D-M-08 RS07D-M-08 Vishay General Semiconductor - Diodes Division rs07bm.pdf Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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MBR2060CT-E3/45 MBR2060CT-E3/45 Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CTHE3/45 MBR2060CTHE3/45 Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S15A-002HE3_A/I SM8S15A-002HE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 270A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 MMSZ5245C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 15V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 MMSZ5245C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 15V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZM5257B-GS08 TZM5257B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 33V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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TZM5257B-GS08 TZM5257B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 33V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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TZM5251B-GS08 TZM5251B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 22V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TZM5251B-GS08 TZM5251B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 22V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TZM5256B-GS08 TZM5256B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 30V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX584C15-G3-08 bzx584c-series.pdf
BZX584C15-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZX584C2V2-G3-08 bzx584c-series.pdf
BZX584C2V2-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.2V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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67+0.31 EUR
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VS-60EPU06L-N3 vs-60epu06l-n3.pdf
VS-60EPU06L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
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2+12.07 EUR
25+7.03 EUR
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VS-30EPH06L-N3 vs-30eph06l-n3.pdf
VS-30EPH06L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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V1FM15-M3/H v1fm15.pdf
V1FM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 1A DO219AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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56+0.38 EUR
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VS-50WQ06FNTR-M3 50wq06fn.pdf
VS-50WQ06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 76666 Stücke:
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7+3.28 EUR
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VS-MBRS130L-M3/5BT vsmbrs130lm3.pdf
VS-MBRS130L-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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15+1.49 EUR
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VS-10BQ060-M3/5BT vs-10bq060m.pdf
VS-10BQ060-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 147036 Stücke:
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15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
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VS-6CWQ10FNTR-M3 6cwq10fn.pdf
VS-6CWQ10FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 100V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 3883 Stücke:
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13+1.63 EUR
21+1.04 EUR
100+0.89 EUR
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BZT03C27-TR bzt03.pdf
BZT03C27-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 38.1VC SOD57
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
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18+1.21 EUR
21+1.04 EUR
100+0.73 EUR
500+0.61 EUR
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BZG03C10-M3-18 bzg03c-m-series.pdf
BZG03C10-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
auf Bestellung 2295 Stücke:
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23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.31 EUR
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VS-30BQ100HM3/9AT vs-30bq100hm3.pdf
VS-30BQ100HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4761 Stücke:
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11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.57 EUR
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VS-10MQ060-M3/5AT vs-10mq060m.pdf
VS-10MQ060-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 31pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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100+0.42 EUR
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VS-12CWQ03FNTR-M3 vs-12cwq03f.pdf
VS-12CWQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V 6A DPAK
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 30 V
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VS-HFA08SD60STR-M3 vs-hfa08sd6.pdf
VS-HFA08SD60STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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1.5KE27AHE3_A/C 15ke.pdf
1.5KE27AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-10MQ040-M3/5AT vs-10mq040m.pdf
VS-10MQ040-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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1N4151W-E3-08 1n4151w_a.pdf
1N4151W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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29+0.74 EUR
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VS-50WQ03FNTR-M3 50wq03fn.pdf
VS-50WQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
auf Bestellung 5963 Stücke:
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13+1.68 EUR
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VS-8EWH02FNTR-M3 vs-8ewh02fn.pdf
VS-8EWH02FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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7+3.31 EUR
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VS-30BQ060-M3/9AT vs-30bq060m.pdf
VS-30BQ060-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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11+2.03 EUR
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VS-5ECU06-M3/9AT vs-5ecu06-m3.pdf
VS-5ECU06-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 43 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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VS-MBRS340-M3/9AT vs-mbrs340m3.pdf
VS-MBRS340-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
auf Bestellung 59536 Stücke:
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VS-10BQ100-M3/5BT vs-10bq100m.pdf
VS-10BQ100-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
auf Bestellung 24145 Stücke:
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15+1.44 EUR
24+0.9 EUR
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VS-6CWQ03FNTR-M3 6cwq03fn.pdf
VS-6CWQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
auf Bestellung 2091 Stücke:
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19+1.13 EUR
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VS-30BQ060HM3/9AT vs-30bq060hm3.pdf
VS-30BQ060HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 10034 Stücke:
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11+2.01 EUR
17+1.25 EUR
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VS-30WQ03FNTR-M3 30wq03fn.pdf
VS-30WQ03FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
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VCAN16A2-03GHE3-08 vcan16a2-03g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28VC SOT323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 2
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 15.5pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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3000+0.12 EUR
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VCAN16A2-03GHE3-08 vcan16a2-03g.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28VC SOT323
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 2
Supplier Device Package: SOT-323
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 15.5pF @ 1MHz
Applications: CAN
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 11829 Stücke:
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VS-32CTQ030STRL-M3 vs-32ctqs-m3series.pdf
VS-32CTQ030STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
auf Bestellung 3806 Stücke:
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BYW52-TR byw52.pdf
BYW52-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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13+1.65 EUR
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BZT03C180-TR bzt03.pdf
BZT03C180-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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BZT03C47-TR bzt03.pdf
BZT03C47-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
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BZT03C51-TR bzt03.pdf
BZT03C51-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 70.8VC SOD57
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 24623 Stücke:
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16+1.34 EUR
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BZT03C43-TR bzt03.pdf
BZT03C43-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 60.7VC SOD57
Tolerance: ±6.98%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZT03C82-TR bzt03.pdf
BZT03C82-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W SOD57
Tolerance: ±6.1%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
auf Bestellung 17029 Stücke:
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BZT03C36-TR bzt03.pdf
BZT03C36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.3W SOD57
Tolerance: ±5.56%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
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BZT03C130-TR bzt03.pdf
BZT03C130-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 185VC SOD57
Tolerance: ±6.54%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 23822 Stücke:
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19+1.15 EUR
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VS-15MQ040-M3/5AT vs-15mq040m.pdf
VS-15MQ040-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 14050 Stücke:
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14+1.59 EUR
22+0.99 EUR
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BZX84C3V3-E3-18 bzx84_series.pdf
BZX84C3V3-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 5468 Stücke:
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28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
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5000+0.15 EUR
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1N5222B-TR 1n5221.pdf
1N5222B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 17179 Stücke:
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100+0.21 EUR
150+0.14 EUR
276+0.076 EUR
500+0.07 EUR
1000+0.065 EUR
2000+0.062 EUR
5000+0.06 EUR
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1N4001-E3/53 1n4001.pdf
1N4001-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 2543 Stücke:
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21+1.02 EUR
34+0.63 EUR
100+0.39 EUR
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1000+0.26 EUR
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1N5233B-TAP 1n5221.pdf
1N5233B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
auf Bestellung 17590 Stücke:
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1N5225B-TAP 1n5221.pdf
1N5225B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO204AH
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 9337 Stücke:
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100+0.21 EUR
127+0.17 EUR
313+0.067 EUR
500+0.058 EUR
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VS-42CTQ030STRL-M3 vs-42ctq030s-m3.pdf
VS-42CTQ030STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5461 Stücke:
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3+8.07 EUR
10+5.31 EUR
100+3.74 EUR
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VS-16CTQ100STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 2071 Stücke:
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10+2.15 EUR
12+1.76 EUR
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VS-8TQ100STRL-M3 vs-8tqs-m3.pdf
VS-8TQ100STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
auf Bestellung 6146 Stücke:
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5+5.09 EUR
10+3.28 EUR
100+2.25 EUR
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VS-10ETS08STRL-M3 vs-10ets08s.pdf
VS-10ETS08STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 9209 Stücke:
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7+3.2 EUR
10+2.63 EUR
100+2.05 EUR
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RS07D-M-08 rs07bm.pdf
RS07D-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
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RS07D-M-08 rs07bm.pdf
RS07D-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 73792 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
48+0.44 EUR
100+0.23 EUR
500+0.2 EUR
1000+0.15 EUR
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MBR2060CT-E3/45 mbr20xxct.pdf
MBR2060CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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MBR2060CTHE3/45 mbr20xxct.pdf
MBR2060CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM8S15A-002HE3_A/I sm8s.pdf
SM8S15A-002HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 270A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5245C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5245C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5245C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZM5257B-GS08 tzm5221.pdf
TZM5257B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TZM5257B-GS08 tzm5221.pdf
TZM5257B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 1002 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
127+0.17 EUR
264+0.08 EUR
500+0.077 EUR
1000+0.076 EUR
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TZM5251B-GS08 tzm5221.pdf
TZM5251B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TZM5251B-GS08 tzm5221.pdf
TZM5251B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.2 EUR
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TZM5256B-GS08 tzm5221.pdf
TZM5256B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 49 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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