| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BXS035N10BP | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS035N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 165A Case: PDFN56 Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS040N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 170A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS040N10P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS045N10C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56 Case: PDFN56 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 75nC On-state resistance: 7.5mΩ Power dissipation: 167W Drain current: 117A Drain-source voltage: 100V Pulsed drain current: 600A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS049N08P | BRIDGELUX | BXS049N08P THT N channel transistors |
auf Bestellung 865 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
| BXS080N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Case: PDFN56 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS105N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Pulsed drain current: 56A Power dissipation: 3.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10749 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10749 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXS130N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXS160N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Mounting: SMD Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1611 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1611 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT020N03C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 130A Pulsed drain current: 520A Power dissipation: 120W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT030N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT040N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT060N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 4.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT070N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT080N03E | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 120A Power dissipation: 12W Case: PDFN8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT080N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Case: TO252 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.2nC On-state resistance: 0.11Ω Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 1287 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.2nC On-state resistance: 0.11Ω Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1287 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT1000N06N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Case: TO252 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 78W Gate-source voltage: ±20V Pulsed drain current: 64A |
auf Bestellung 4390 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Case: TO252 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 78W Gate-source voltage: ±20V Pulsed drain current: 64A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4390 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Case: SOT89-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 2W Gate-source voltage: ±20V Pulsed drain current: 32A |
auf Bestellung 7685 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Case: SOT89-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 2W Gate-source voltage: ±20V Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7685 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -16A Power dissipation: 1.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2805 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -16A Power dissipation: 1.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2805 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 |
auf Bestellung 11884 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11884 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1984 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1984 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT250N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT250N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT270N02M | BRIDGELUX | BXT270N02M SMD N channel transistors |
auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
| BXT2800N10M | BRIDGELUX | BXT2800N10M SMD N channel transistors |
auf Bestellung 4069 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Polarisation: unipolar Case: SOP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Gate charge: 5.5nC On-state resistance: 38mΩ Power dissipation: 1.6W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 24A Kind of package: reel; tape |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Polarisation: unipolar Case: SOP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Gate charge: 5.5nC On-state resistance: 38mΩ Power dissipation: 1.6W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 24A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 509 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT280N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8780 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8780 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT330N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23 Case: SOT23 Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 11nC On-state resistance: 33mΩ Power dissipation: 1.25W Pulsed drain current: 24A Drain current: 6A Gate-source voltage: ±10V Drain-source voltage: 20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT330N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23 Case: SOT23 Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 4.5A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXT330N03N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
BXT330N06D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 80A Power dissipation: 27.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
BXT330N06D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 80A Power dissipation: 27.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| BXT3800P06M | BRIDGELUX | BXT3800P06M SMD P channel transistors |
auf Bestellung 6659 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
BXT420N03M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7693 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT420N03M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7693 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXT520P02M | BRIDGELUX | BXT520P02M SMD P channel transistors |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||||
|
BXT600P03M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Drain current: -2.7A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16.4A |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT600P03M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Drain current: -2.7A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2350 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
|
BXT900P06D | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; TO252 Drain-source voltage: -60V Polarisation: unipolar Kind of channel: enhancement Case: TO252 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
BXT900P06D | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; TO252 Drain-source voltage: -60V Polarisation: unipolar Kind of channel: enhancement Case: TO252 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2490 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||||
| BXW120R036H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 60A; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Mounting: THT Kind of channel: enhancement Case: TO247 Drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXW120R036H4 | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BXW60M1K2H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BXS035N10BP |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS035N10C |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 165A
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 165A
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS040N08P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 170A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 170A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS040N10P |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS045N10C |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 75nC
On-state resistance: 7.5mΩ
Power dissipation: 167W
Drain current: 117A
Drain-source voltage: 100V
Pulsed drain current: 600A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 75nC
On-state resistance: 7.5mΩ
Power dissipation: 167W
Drain current: 117A
Drain-source voltage: 100V
Pulsed drain current: 600A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS049N08P |
Hersteller: BRIDGELUX
BXS049N08P THT N channel transistors
BXS049N08P THT N channel transistors
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| BXS080N10C |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS105N10B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS1150N10M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10749 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 286+ | 0.25 EUR |
| 409+ | 0.18 EUR |
| 572+ | 0.13 EUR |
| 1142+ | 0.063 EUR |
| 1511+ | 0.047 EUR |
| 1713+ | 0.042 EUR |
| 3000+ | 0.038 EUR |
| BXS1150N10M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10749 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 286+ | 0.25 EUR |
| 409+ | 0.18 EUR |
| 572+ | 0.13 EUR |
| 1142+ | 0.063 EUR |
| 1511+ | 0.047 EUR |
| 1713+ | 0.042 EUR |
| BXS130N10C |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS160N10C |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Mounting: SMD
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Mounting: SMD
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXS230N10B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1611 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 183+ | 0.39 EUR |
| 283+ | 0.25 EUR |
| 391+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| BXS230N10B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1611 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 183+ | 0.39 EUR |
| 283+ | 0.25 EUR |
| 391+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| BXT020N03C |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT030N03C |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT040N03C |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT060N03B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT070N06D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT080N03E |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT080N06D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT1000N06M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 540+ | 0.13 EUR |
| 771+ | 0.093 EUR |
| 1286+ | 0.056 EUR |
| BXT1000N06M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1287 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 540+ | 0.13 EUR |
| 771+ | 0.093 EUR |
| 1286+ | 0.056 EUR |
| 3000+ | 0.05 EUR |
| 6000+ | 0.044 EUR |
| BXT1000N06N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT1150N10D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 64A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 64A
auf Bestellung 4390 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 280+ | 0.26 EUR |
| 353+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 468+ | 0.15 EUR |
| 516+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.11 EUR |
| BXT1150N10D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4390 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 280+ | 0.26 EUR |
| 353+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 468+ | 0.15 EUR |
| 516+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| BXT1150N10J |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Pulsed drain current: 32A
auf Bestellung 7685 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 463+ | 0.15 EUR |
| 579+ | 0.12 EUR |
| 647+ | 0.11 EUR |
| 776+ | 0.092 EUR |
| 866+ | 0.083 EUR |
| 1000+ | 0.077 EUR |
| 3000+ | 0.073 EUR |
| 4000+ | 0.066 EUR |
| BXT1150N10J |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7685 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 463+ | 0.15 EUR |
| 579+ | 0.12 EUR |
| 647+ | 0.11 EUR |
| 776+ | 0.092 EUR |
| 866+ | 0.083 EUR |
| 1000+ | 0.077 EUR |
| BXT1700P06M |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2805 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 360+ | 0.2 EUR |
| 447+ | 0.16 EUR |
| 506+ | 0.14 EUR |
| 603+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| BXT1700P06M |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2805 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 360+ | 0.2 EUR |
| 447+ | 0.16 EUR |
| 506+ | 0.14 EUR |
| 603+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| BXT170N06D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT210N02M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
auf Bestellung 11884 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 325+ | 0.22 EUR |
| 648+ | 0.11 EUR |
| 1080+ | 0.066 EUR |
| 1624+ | 0.044 EUR |
| 2009+ | 0.036 EUR |
| BXT210N02M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11884 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 325+ | 0.22 EUR |
| 648+ | 0.11 EUR |
| 1080+ | 0.066 EUR |
| 1624+ | 0.044 EUR |
| 2009+ | 0.036 EUR |
| BXT230P03B |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1984 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 350+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| BXT230P03B |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1984 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 350+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| BXT250N03B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT250N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT270N02M |
Hersteller: BRIDGELUX
BXT270N02M SMD N channel transistors
BXT270N02M SMD N channel transistors
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 2428+ | 0.029 EUR |
| 2565+ | 0.028 EUR |
| BXT2800N10M |
Hersteller: BRIDGELUX
BXT2800N10M SMD N channel transistors
BXT2800N10M SMD N channel transistors
auf Bestellung 4069 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 528+ | 0.14 EUR |
| 1924+ | 0.037 EUR |
| 2033+ | 0.035 EUR |
| BXT280N02B |
![]() |
Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 457+ | 0.16 EUR |
| 509+ | 0.14 EUR |
| BXT280N02B |
![]() |
Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 509 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 457+ | 0.16 EUR |
| 509+ | 0.14 EUR |
| 1000+ | 0.084 EUR |
| BXT280N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT2N7002BK |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8780 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1389+ | 0.051 EUR |
| 2017+ | 0.035 EUR |
| 2488+ | 0.029 EUR |
| 3312+ | 0.022 EUR |
| 3677+ | 0.019 EUR |
| 4167+ | 0.017 EUR |
| 4630+ | 0.015 EUR |
| BXT2N7002BK |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8780 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1389+ | 0.051 EUR |
| 2017+ | 0.035 EUR |
| 2488+ | 0.029 EUR |
| 3312+ | 0.022 EUR |
| 3677+ | 0.019 EUR |
| 4167+ | 0.017 EUR |
| BXT330N02M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Pulsed drain current: 24A
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Pulsed drain current: 24A
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT330N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 4.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 4.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT330N03N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT330N06D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT330N06D |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXT3800P06M |
Hersteller: BRIDGELUX
BXT3800P06M SMD P channel transistors
BXT3800P06M SMD P channel transistors
auf Bestellung 6659 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 227+ | 0.32 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| BXT420N03M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7693 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 807+ | 0.089 EUR |
| 1158+ | 0.062 EUR |
| 1446+ | 0.049 EUR |
| 1613+ | 0.044 EUR |
| 1924+ | 0.037 EUR |
| 2137+ | 0.033 EUR |
| 3000+ | 0.03 EUR |
| BXT420N03M |
![]() |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7693 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 807+ | 0.089 EUR |
| 1158+ | 0.062 EUR |
| 1446+ | 0.049 EUR |
| 1613+ | 0.044 EUR |
| 1924+ | 0.037 EUR |
| 2137+ | 0.033 EUR |
| BXT520P02M |
Hersteller: BRIDGELUX
BXT520P02M SMD P channel transistors
BXT520P02M SMD P channel transistors
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 498+ | 0.14 EUR |
| 1369+ | 0.053 EUR |
| 12000+ | 0.034 EUR |
| BXT600P03M |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 569+ | 0.13 EUR |
| 812+ | 0.088 EUR |
| 1019+ | 0.07 EUR |
| 1139+ | 0.063 EUR |
| 1356+ | 0.053 EUR |
| 1507+ | 0.047 EUR |
| BXT600P03M |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 569+ | 0.13 EUR |
| 812+ | 0.088 EUR |
| 1019+ | 0.07 EUR |
| 1139+ | 0.063 EUR |
| 1356+ | 0.053 EUR |
| 1507+ | 0.047 EUR |
| BXT900P06D |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 190+ | 0.38 EUR |
| 223+ | 0.32 EUR |
| 278+ | 0.26 EUR |
| 311+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| BXT900P06D |
![]() |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 190+ | 0.38 EUR |
| 223+ | 0.32 EUR |
| 278+ | 0.26 EUR |
| 311+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| BXW120R036H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Case: TO247
Drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Case: TO247
Drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXW120R036H4 |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BXW60M1K2H |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH











