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DMN3010LFG-7 DIODES INCORPORATED DMN3010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMT35M4LFDF-7 DIODES INCORPORATED DMT35M4LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SMBJ8.5CA-13-F SMBJ8.5CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 80 Stücke:
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80+0.89 EUR
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74HCT164T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07 Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
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SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1954 Stücke:
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193+0.37 EUR
248+0.29 EUR
285+0.25 EUR
447+0.16 EUR
650+0.11 EUR
685+0.1 EUR
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74LVC1G86QSE-7 DIODES INCORPORATED 74LVC1G86Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
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3000+0.097 EUR
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3.0SMCJ24CA-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AS431HANTR-G1 AS431HANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2975 Stücke:
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278+0.26 EUR
338+0.21 EUR
385+0.19 EUR
455+0.16 EUR
556+0.13 EUR
981+0.073 EUR
1042+0.069 EUR
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AS431HMBNTR-G1 AS431HMBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 1910 Stücke:
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200+0.36 EUR
248+0.29 EUR
283+0.25 EUR
338+0.21 EUR
410+0.17 EUR
1000+0.072 EUR
1064+0.067 EUR
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AS431BZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HMANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ARTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
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AS431HAZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IANTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IAZTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBNTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBRTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZTX851STZ DIODES INCORPORATED ZTX851.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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FZT956TA FZT956TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
auf Bestellung 456 Stücke:
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42+1.73 EUR
66+1.09 EUR
109+0.66 EUR
115+0.62 EUR
250+0.6 EUR
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FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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DMP3056LSSQ-13 DMP3056LSSQ-13 DIODES INCORPORATED DMP3056LSSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3056LSS-13 DMP3056LSS-13 DIODES INCORPORATED ds31419.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056L-13 DMP3056L-13 DIODES INCORPORATED DMP3056L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3056LSDQ-13 DMP3056LSDQ-13 DIODES INCORPORATED DMP3056LSDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DDZ24ASF-7 DIODES INCORPORATED ds31987.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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DMN2028UVT-7 DMN2028UVT-7 DIODES INCORPORATED DMN2028UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-13 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDF-7 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFDH-7 DIODES INCORPORATED DMN2028UFDH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN2028UFU-7 DIODES INCORPORATED DMN2028UFU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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74LVC2G00HD4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26920D3&compId=74LVC2G00.pdf?ci_sign=93257c0c1f895e3daaef546cef1963c0a1808c92 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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74LVC2G00HK3-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26A20D3&compId=74LVC2G00.pdf?ci_sign=c000ec93a58b7f027f4a452ca1be98434f0b43db Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
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SMAJ14CA-13-F SMAJ14CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3535 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
317+0.23 EUR
382+0.19 EUR
806+0.089 EUR
842+0.085 EUR
892+0.08 EUR
Mindestbestellmenge: 264
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BCP55TA BCP55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
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74AHC1G00QW5-7 DIODES INCORPORATED 74AHC1G00Q.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.075 EUR
Mindestbestellmenge: 3000
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AP22913CN4-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Produkt ist nicht verfügbar
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MMDT3946Q-7R DIODES INCORPORATED MMDT3946Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06Q-7-F BAS40-06Q-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06Q-13-F BAS40-06Q-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06T-7-F BAS40-06T-7-F DIODES INCORPORATED BAS40T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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MMBTA06-7-F MMBTA06-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6327 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
481+0.15 EUR
740+0.097 EUR
895+0.08 EUR
1356+0.053 EUR
2605+0.027 EUR
2748+0.026 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
AP2552AW6-7 AP2552AW6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 1336 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
157+0.46 EUR
176+0.41 EUR
205+0.35 EUR
286+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 129
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AP2552FDC-7 DIODES INCORPORATED AP255x.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
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ZXMC10A816N8TC ZXMC10A816N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3010LFG-7 DMN3010LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Polarisation: unipolar
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 14.9nC
On-state resistance: 10.5mΩ
Power dissipation: 1.7W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
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BAV99Q-7-F BAV99.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99.pdf
BAV99-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SMBJ8.5CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ8.5CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 9.44÷10.82V; 41.7A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.82V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.89 EUR
Mindestbestellmenge: 80
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74HCT164T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25FBC0D3&compId=74HCT164.pdf?ci_sign=cb4c53cc543bd10d3e5ba41847f244abef166c07
Hersteller: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: push-pull
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Produkt ist nicht verfügbar
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SMBJ43CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ43CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
248+0.29 EUR
285+0.25 EUR
447+0.16 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 193
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74LVC1G86QSE-7 74LVC1G86Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.097 EUR
Mindestbestellmenge: 3000
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3.0SMCJ24CA-13 pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BB741D84D880DF&compId=3.0SMCJxx.pdf?ci_sign=66b79dd9e6490985f47e629486c9d364f4777550
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷29.5V; 77.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 77.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AS431HANTR-G1 AS431H.pdf
AS431HANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Case: SOT23
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±0.5%
Reference voltage: 2.495V
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
338+0.21 EUR
385+0.19 EUR
455+0.16 EUR
556+0.13 EUR
981+0.073 EUR
1042+0.069 EUR
Mindestbestellmenge: 278
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AS431HMBNTR-G1 AS431H.pdf
AS431HMBNTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
283+0.25 EUR
338+0.21 EUR
410+0.17 EUR
1000+0.072 EUR
1064+0.067 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
AS431BZTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS431ANTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BNTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431HMANTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431AKTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS431ANTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431ARTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431AZTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS431AZTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BKTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BNTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BRTR-E1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS431BRTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431BZTR-G1 AS431.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Case: TO92
Operating temperature: -40...125°C
Maximum output current: 0.1A
Tolerance: ±1%
Reference voltage: 2.5V
Kind of package: Ammo Pack
Operating voltage: 2.5...36V
Mounting: THT
Produkt ist nicht verfügbar
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AS431HAZTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS431HBNTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431HBZTR-G1 AS431H.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IANTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IAZTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IBNTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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AS431IBRTR-G1 AS431I.pdf
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
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ZTX851STZ ZTX851.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Produkt ist nicht verfügbar
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FZT956TA pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da
FZT956TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
66+1.09 EUR
109+0.66 EUR
115+0.62 EUR
250+0.6 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
FZT956QTA FZT956.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
Produkt ist nicht verfügbar
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DMP3056LSSQ-13 DMP3056LSSQ.pdf
DMP3056LSSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMP3056LSS-13 ds31419.pdf
DMP3056LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L.pdf
DMP3056L-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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ZXTD2090E6TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Produkt ist nicht verfügbar
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DDZ24ASF-7 ds31987.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Produkt ist nicht verfügbar
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DMN2028UVT-7 DMN2028UVT.pdf
DMN2028UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2028UFDF-13 DMN2028UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2028UFDF-7 DMN2028UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2028UFDH-7 DMN2028UFDH.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2028UFU-7 DMN2028UFU.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LVC2G00HD4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26920D3&compId=74LVC2G00.pdf?ci_sign=93257c0c1f895e3daaef546cef1963c0a1808c92
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN2010-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
Produkt ist nicht verfügbar
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74LVC2G00HK3-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB26A20D3&compId=74LVC2G00.pdf?ci_sign=c000ec93a58b7f027f4a452ca1be98434f0b43db
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1410-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 2
Kind of gate: NAND
Kind of output: push-pull
Kind of package: reel; tape
Case: X2-DFN1410-8
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Supply voltage: 1.65...5.5V DC
Family: LVC
Number of inputs: 2
Technology: CMOS
Produkt ist nicht verfügbar
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SMAJ14CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
317+0.23 EUR
382+0.19 EUR
806+0.089 EUR
842+0.085 EUR
892+0.08 EUR
Mindestbestellmenge: 264
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BCP55TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP55TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
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74AHC1G00QW5-7 74AHC1G00Q.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.075 EUR
Mindestbestellmenge: 3000
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AP22913CN4-7 AP22913.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Produkt ist nicht verfügbar
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MMDT3946Q-7R MMDT3946Q.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06Q-7-F BAS40_-04_-05_-06.pdf
BAS40-06Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06Q-13-F
BAS40-06Q-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Application: automotive industry
Produkt ist nicht verfügbar
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BAS40-06T-7-F BAS40T_-04T_-05T_-06T.pdf
BAS40-06T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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MMBTA06-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18
MMBTA06-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
auf Bestellung 6327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
740+0.097 EUR
895+0.08 EUR
1356+0.053 EUR
2605+0.027 EUR
2748+0.026 EUR
Mindestbestellmenge: 358
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AP2552AW6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229
AP2552AW6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 1336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
157+0.46 EUR
176+0.41 EUR
205+0.35 EUR
286+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 129
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AP2552FDC-7 AP255x.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
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ZXMC10A816N8TC pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8D5FD5AA9760CE&compId=ZXMC10A816N8.pdf?ci_sign=4dcc964adf5f7787e1ca8598dedb1ff9e01faf4c
ZXMC10A816N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100/-100V
Drain current: 2.2/-2.1A
Pulsed drain current: 9.4A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.23/0.235Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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