Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149581) > Seite 1243 nach 2494
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AUIRF7379QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 16.7nC Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7640S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7647S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 41W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7648M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 63W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7665S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14.4A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 30W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7669L2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 100W Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7675M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 45W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7736M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 108A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 63W Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7737L2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 156A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 83W Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF7739L2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 125W Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFB8405 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFB8407 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFB8409 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 195A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFN7107TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 53A Power dissipation: 300W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFN8459TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR024N | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: DPAK Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR3504Z | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate charge: 30nC On-state resistance: 9mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 150 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR4105ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR5305TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AUIRFR5305TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Power dissipation: 110W Case: TO252AA Mounting: SMD Kind of channel: enhancement On-state resistance: 65mΩ Gate-source voltage: ±20V Pulsed drain current: -110A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AUIRFR8405TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Pulsed drain current: 804A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AUIRFR9024NTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8A Power dissipation: 38W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 19nC Kind of channel: enhancement Pulsed drain current: -44A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AUIRFSL8403 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 87A Power dissipation: 99W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 62nC Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFSL8407 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO262 Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AUIRFZ44VZS | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AUIRG4PH50S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 81A Power dissipation: 217W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 99A Mounting: THT Gate charge: 227nC Kind of package: tube Anzahl je Verpackung: 75 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP35B60PD | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 34A Power dissipation: 123W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 240nC Kind of package: tube Turn-on time: 34ns Turn-off time: 142ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP4062D | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 125W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 72A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 64ns Turn-off time: 164ns Anzahl je Verpackung: 400 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Mounting: THT Case: TO247AC Collector current: 90A Pulsed collector current: 225A Turn-on time: 115ns Turn-off time: 320ns Type of transistor: IGBT Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Power dissipation: 227W Kind of package: tube Gate charge: 225nC Technology: Trench Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Case: TO262 Mounting: THT Kind of package: tube Type of transistor: IGBT Pulsed collector current: 72A Collector current: 39A Collector-emitter voltage: 600V Power dissipation: 123W Gate charge: 77nC Technology: Trench Gate-emitter voltage: ±20V Turn-on time: 35ns Turn-off time: 176ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRL7732S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 41W Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRL7736M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 112A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 63W Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AUIRL7766M2TR | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AUIRLR2905ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Pulsed drain current: 240A Power dissipation: 110W Case: DPAK Gate-source voltage: ±16V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AUIRLS3034 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 243A Power dissipation: 375W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 108nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA885E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.19...0.45pF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1333 Stücke: Lieferzeit 7-14 Tag (e) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Case: SC79 Capacitance: 0.6...1.4pF Max. off-state voltage: 35V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 120ns Leakage current: 20nA Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2272 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Mounting: SMD Case: SC79 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2855 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Mounting: SMD Case: SOD323 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2619 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Mounting: SMD Case: SOT323 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: common cathode; double Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1115 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Mounting: SMD Case: SOD323 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1880 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Mounting: SMD Case: SOT23 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: double series Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1798 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Mounting: SMD Case: SC79 Capacitance: 0.5pF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Leakage current: 20nA Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Mounting: SMD Case: SOT23 Max. off-state voltage: 150V Max. forward voltage: 1.2V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 12A Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1520 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Kind of package: reel; tape Power dissipation: 0.1W Type of diode: switching Features of semiconductor devices: RF Mounting: SMD Case: SOT343 Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Reverse recovery time: 80ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2474 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS116E6433HTMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW Power dissipation: 0.25W Type of diode: Schottky switching Mounting: SMD Case: SOT323 Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double series Max. forward impulse current: 0.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2785 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS12507WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW Mounting: SMD Case: SOT343 Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double independent Max. forward impulse current: 0.5A Power dissipation: 0.25W Type of diode: Schottky switching Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Max. forward impulse current: 0.2A Power dissipation: 0.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6911 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SC79 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3291 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2735 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13571 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4750 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOD323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.1A Power dissipation: 0.25W Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3038 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRF7379QTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7640S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7647S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7648M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7665S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7669L2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7675M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7736M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7737L2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7739L2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFB8405 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.09 EUR |
14+ | 5.11 EUR |
AUIRFB8407 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFB8409 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFN7107TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFN8459TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR024N |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR3504Z |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 150 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 150 Stücke
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AUIRFR4105ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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AUIRFR5305TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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AUIRFR5305TRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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AUIRFR8405TRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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AUIRFR9024NTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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AUIRFSL8403 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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AUIRFSL8407 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Anzahl je Verpackung: 50 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
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AUIRFZ44VZS |
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Hersteller: INFINEON TECHNOLOGIES
AUIRFZ44VZS SMD N channel transistors
AUIRFZ44VZS SMD N channel transistors
Produkt ist nicht verfügbar
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AUIRG4PH50S |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Anzahl je Verpackung: 75 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Anzahl je Verpackung: 75 Stücke
Produkt ist nicht verfügbar
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AUIRGP35B60PD |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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AUIRGP4062D |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Produkt ist nicht verfügbar
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AUIRGP4066D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Collector current: 90A
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Power dissipation: 227W
Kind of package: tube
Gate charge: 225nC
Technology: Trench
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Collector current: 90A
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Power dissipation: 227W
Kind of package: tube
Gate charge: 225nC
Technology: Trench
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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AUIRGSL4062D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
50+ | 4.85 EUR |
AUIRL1404ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7732S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7736M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7766M2TR |
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Hersteller: INFINEON TECHNOLOGIES
AUIRL7766M2TR SMD N channel transistors
AUIRL7766M2TR SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLR2905ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLS3034 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
335+ | 0.21 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
485+ | 0.15 EUR |
510+ | 0.14 EUR |
BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
335+ | 0.21 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
485+ | 0.15 EUR |
510+ | 0.14 EUR |
BA885E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1333 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1064+ | 0.07 EUR |
1087+ | 0.07 EUR |
BA89202VH6127XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Case: SC79
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Case: SC79
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2272 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
582+ | 0.12 EUR |
962+ | 0.07 EUR |
1260+ | 0.06 EUR |
1707+ | 0.04 EUR |
1806+ | 0.04 EUR |
BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2855 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
271+ | 0.26 EUR |
339+ | 0.21 EUR |
543+ | 0.13 EUR |
1011+ | 0.07 EUR |
1069+ | 0.07 EUR |
BAR6303WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2619 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
311+ | 0.23 EUR |
412+ | 0.17 EUR |
635+ | 0.11 EUR |
827+ | 0.09 EUR |
910+ | 0.08 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
556+ | 0.13 EUR |
650+ | 0.11 EUR |
685+ | 0.10 EUR |
BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1115 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
298+ | 0.24 EUR |
435+ | 0.16 EUR |
582+ | 0.12 EUR |
1000+ | 0.11 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
556+ | 0.13 EUR |
650+ | 0.11 EUR |
685+ | 0.10 EUR |
BAR6403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
618+ | 0.12 EUR |
667+ | 0.11 EUR |
695+ | 0.10 EUR |
BAR6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1798 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
296+ | 0.24 EUR |
384+ | 0.19 EUR |
573+ | 0.12 EUR |
884+ | 0.08 EUR |
933+ | 0.08 EUR |
1000+ | 0.07 EUR |
BAR6502VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAR66E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
252+ | 0.28 EUR |
353+ | 0.20 EUR |
414+ | 0.17 EUR |
439+ | 0.16 EUR |
BAR81WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
177+ | 0.41 EUR |
199+ | 0.36 EUR |
227+ | 0.32 EUR |
240+ | 0.30 EUR |
BAS116E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2474 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
421+ | 0.17 EUR |
537+ | 0.13 EUR |
767+ | 0.09 EUR |
1374+ | 0.05 EUR |
1450+ | 0.05 EUR |
24000+ | 0.05 EUR |
BAS116E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS116E6433 SMD universal diodes
BAS116E6433 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS12504WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
114+ | 0.63 EUR |
222+ | 0.32 EUR |
235+ | 0.30 EUR |
1000+ | 0.29 EUR |
BAS12507WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS140WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6911 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
277+ | 0.26 EUR |
508+ | 0.14 EUR |
1137+ | 0.06 EUR |
1202+ | 0.06 EUR |
BAS1602VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3291 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
807+ | 0.09 EUR |
893+ | 0.08 EUR |
1064+ | 0.07 EUR |
1183+ | 0.06 EUR |
1299+ | 0.06 EUR |
1374+ | 0.05 EUR |
BAS1603WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
895+ | 0.08 EUR |
995+ | 0.07 EUR |
1200+ | 0.06 EUR |
1270+ | 0.06 EUR |
BAS16E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13571 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
777+ | 0.09 EUR |
893+ | 0.08 EUR |
1087+ | 0.07 EUR |
1211+ | 0.06 EUR |
1306+ | 0.06 EUR |
1484+ | 0.05 EUR |
1573+ | 0.05 EUR |
BAS16UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
455+ | 0.16 EUR |
491+ | 0.15 EUR |
511+ | 0.14 EUR |
BAS170WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3038 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
280+ | 0.26 EUR |
377+ | 0.19 EUR |
466+ | 0.15 EUR |
560+ | 0.13 EUR |
889+ | 0.08 EUR |
939+ | 0.08 EUR |