Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148619) > Seite 1246 nach 2477
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1963 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP742T | INFINEON TECHNOLOGIES | BSP742T Power switches - integrated circuits |
auf Bestellung 1754 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2679 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES | BSP752T Power switches - integrated circuits |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSP752TXUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP762T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Technology: Classic PROFET Kind of integrated circuit: high-side Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2444 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Case: PG-SOT223-4 Output voltage: 42V Output current: 1.4A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2551 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP772T | INFINEON TECHNOLOGIES | BSP772T Power switches - integrated circuits |
auf Bestellung 1933 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP77E6433 | INFINEON TECHNOLOGIES | BSP77E6433 Power switches - integrated circuits |
auf Bestellung 3985 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2773 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP88H6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 343 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR202NL6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Drain-source voltage: 30V Drain current: 3.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Drain-source voltage: -100V Drain current: -290mA On-state resistance: 2.2Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1180 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR802NL6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 423 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 2067 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5178 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.63nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.77A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1668 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.77A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26834 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.77A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2748 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 600V Drain current: 0.021A On-state resistance: 700Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2471 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 600V Drain current: 0.021A On-state resistance: 500Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4791 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13247 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8374 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.18A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 0.92A Technology: SIPMOS® Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS138WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2325 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138WH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 1.12A Technology: SIPMOS® Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Case: SOT23 Drain-source voltage: 250V Drain current: 0.1A On-state resistance: 30Ω Mounting: SMD Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7844 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1461 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS169H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3030 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Case: PG-SOT89 Drain-source voltage: -250V Drain current: -0.19A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 640 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6001 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Drain-source voltage: -20V Drain current: -630mA On-state resistance: 0.55Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: PG-SOT-323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4604 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5605 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3181 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS215PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23 Case: PG-SOT23 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ P2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2038 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Drain-source voltage: -20V Drain current: -0.39A On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: PG-SOT-323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1265 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Drain-source voltage: 600V Drain current: 0.09A On-state resistance: 45Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT89 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 532 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 6915 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23 Case: PG-SOT23 Drain-source voltage: -30V Drain current: -2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4730 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 8017 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 4251 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11819 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 945 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 5024 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS7728NH6327XTSA2 | INFINEON TECHNOLOGIES |
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auf Bestellung 2951 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10223 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4229 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3629 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Case: PG-SOT23 Drain-source voltage: -60V Drain current: -0.14A On-state resistance: 8Ω Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel Gate charge: 0.37nC Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5855 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS84PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Case: PG-SOT-323 Drain-source voltage: -60V Drain current: -0.15A On-state resistance: 8Ω Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel Gate charge: 0.37nC Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6277 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS87H6327FTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 911 Stücke: Lieferzeit 7-14 Tag (e) |
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BSV236SPH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSZ014NE2LS5IFATMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BSP61H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP61H6327XTSA1 PNP SMD Darlington transistors
BSP61H6327XTSA1 PNP SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1963 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
33+ | 2.22 EUR |
54+ | 1.33 EUR |
58+ | 1.24 EUR |
2500+ | 1.20 EUR |
BSP742RIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742T |
Hersteller: INFINEON TECHNOLOGIES
BSP742T Power switches - integrated circuits
BSP742T Power switches - integrated circuits
auf Bestellung 1754 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
BSP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2679 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.19 EUR |
38+ | 1.93 EUR |
41+ | 1.74 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
1000+ | 1.56 EUR |
2500+ | 1.52 EUR |
BSP752T |
Hersteller: INFINEON TECHNOLOGIES
BSP752T Power switches - integrated circuits
BSP752T Power switches - integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP752TXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP752TXUMA1 Power switches - integrated circuits
BSP752TXUMA1 Power switches - integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP762T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Kind of integrated circuit: high-side
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Kind of integrated circuit: high-side
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2444 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.06 EUR |
28+ | 2.57 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
2500+ | 1.63 EUR |
BSP76E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2551 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.77 EUR |
41+ | 1.76 EUR |
68+ | 1.06 EUR |
72+ | 1.00 EUR |
1000+ | 0.97 EUR |
BSP772T |
Hersteller: INFINEON TECHNOLOGIES
BSP772T Power switches - integrated circuits
BSP772T Power switches - integrated circuits
auf Bestellung 1933 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.07 EUR |
33+ | 2.23 EUR |
34+ | 2.12 EUR |
BSP77E6433 |
Hersteller: INFINEON TECHNOLOGIES
BSP77E6433 Power switches - integrated circuits
BSP77E6433 Power switches - integrated circuits
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
59+ | 1.22 EUR |
62+ | 1.16 EUR |
BSP78 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2773 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BSP88H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP88H6327XTSA1 SMD N channel transistors
BSP88H6327XTSA1 SMD N channel transistors
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.78 EUR |
203+ | 0.35 EUR |
214+ | 0.33 EUR |
BSP89H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
143+ | 0.50 EUR |
168+ | 0.43 EUR |
192+ | 0.37 EUR |
203+ | 0.35 EUR |
500+ | 0.34 EUR |
BSP92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP92PH6327XTSA1 SMD P channel transistors
BSP92PH6327XTSA1 SMD P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
65+ | 1.10 EUR |
178+ | 0.40 EUR |
10000+ | 0.24 EUR |
BSR202NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR202NL6327HTSA1 SMD N channel transistors
BSR202NL6327HTSA1 SMD N channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
BSR302NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
179+ | 0.40 EUR |
221+ | 0.32 EUR |
341+ | 0.21 EUR |
360+ | 0.20 EUR |
1000+ | 0.19 EUR |
BSR316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
169+ | 0.42 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
1000+ | 0.25 EUR |
BSR802NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR802NL6327HTSA1 SMD N channel transistors
BSR802NL6327HTSA1 SMD N channel transistors
auf Bestellung 423 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
3000+ | 0.22 EUR |
BSR92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR92PH6327XTSA1 SMD P channel transistors
BSR92PH6327XTSA1 SMD P channel transistors
auf Bestellung 2067 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 0.58 EUR |
338+ | 0.21 EUR |
358+ | 0.20 EUR |
9000+ | 0.19 EUR |
BSS119NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5178 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
205+ | 0.35 EUR |
313+ | 0.23 EUR |
459+ | 0.16 EUR |
532+ | 0.13 EUR |
715+ | 0.10 EUR |
758+ | 0.09 EUR |
1000+ | 0.09 EUR |
BSS123IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1668 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
544+ | 0.13 EUR |
691+ | 0.10 EUR |
802+ | 0.09 EUR |
942+ | 0.08 EUR |
1539+ | 0.05 EUR |
1624+ | 0.04 EUR |
BSS123NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26834 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
424+ | 0.17 EUR |
491+ | 0.15 EUR |
785+ | 0.09 EUR |
1197+ | 0.06 EUR |
1266+ | 0.06 EUR |
6000+ | 0.05 EUR |
BSS123NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2748 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
241+ | 0.30 EUR |
353+ | 0.20 EUR |
481+ | 0.15 EUR |
581+ | 0.12 EUR |
688+ | 0.10 EUR |
1250+ | 0.06 EUR |
1323+ | 0.05 EUR |
BSS126H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2471 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
133+ | 0.54 EUR |
156+ | 0.46 EUR |
228+ | 0.31 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
BSS127H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4791 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
300+ | 0.24 EUR |
376+ | 0.19 EUR |
443+ | 0.16 EUR |
511+ | 0.14 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
BSS131H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13247 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
319+ | 0.22 EUR |
408+ | 0.18 EUR |
498+ | 0.14 EUR |
604+ | 0.12 EUR |
944+ | 0.08 EUR |
BSS138NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8374 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
365+ | 0.20 EUR |
593+ | 0.12 EUR |
721+ | 0.10 EUR |
1544+ | 0.05 EUR |
1629+ | 0.04 EUR |
BSS138NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.92A
Technology: SIPMOS®
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.92A
Technology: SIPMOS®
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS138WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2325 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
379+ | 0.19 EUR |
451+ | 0.16 EUR |
678+ | 0.11 EUR |
806+ | 0.09 EUR |
1244+ | 0.06 EUR |
1316+ | 0.05 EUR |
BSS138WH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.12A
Technology: SIPMOS®
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.12A
Technology: SIPMOS®
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS139H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7844 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
3000+ | 0.17 EUR |
BSS159NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1461 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
250+ | 0.29 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
BSS169H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3030 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
110+ | 0.65 EUR |
156+ | 0.46 EUR |
404+ | 0.18 EUR |
424+ | 0.17 EUR |
447+ | 0.16 EUR |
500+ | 0.14 EUR |
BSS192PH6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 640 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
154+ | 0.47 EUR |
180+ | 0.40 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
1000+ | 0.22 EUR |
BSS205NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6001 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
288+ | 0.25 EUR |
357+ | 0.20 EUR |
421+ | 0.17 EUR |
502+ | 0.14 EUR |
910+ | 0.08 EUR |
962+ | 0.07 EUR |
BSS209PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4604 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
491+ | 0.15 EUR |
578+ | 0.12 EUR |
738+ | 0.10 EUR |
1069+ | 0.07 EUR |
1132+ | 0.06 EUR |
BSS214NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5605 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
264+ | 0.27 EUR |
429+ | 0.17 EUR |
484+ | 0.15 EUR |
832+ | 0.09 EUR |
881+ | 0.08 EUR |
BSS214NWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3181 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
241+ | 0.30 EUR |
341+ | 0.21 EUR |
509+ | 0.14 EUR |
587+ | 0.12 EUR |
854+ | 0.08 EUR |
903+ | 0.08 EUR |
1000+ | 0.08 EUR |
BSS215PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2038 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
242+ | 0.30 EUR |
348+ | 0.21 EUR |
432+ | 0.17 EUR |
511+ | 0.14 EUR |
715+ | 0.10 EUR |
758+ | 0.09 EUR |
BSS223PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
391+ | 0.18 EUR |
455+ | 0.16 EUR |
516+ | 0.14 EUR |
589+ | 0.12 EUR |
962+ | 0.07 EUR |
1021+ | 0.07 EUR |
BSS225H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
Anzahl je Verpackung: 1 Stücke
auf Bestellung 532 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.88 EUR |
116+ | 0.62 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
500+ | 0.32 EUR |
BSS306NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS306NH6327XTSA1 SMD N channel transistors
BSS306NH6327XTSA1 SMD N channel transistors
auf Bestellung 6915 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
75000+ | 0.09 EUR |
BSS308PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Case: PG-SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Case: PG-SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
207+ | 0.35 EUR |
286+ | 0.25 EUR |
327+ | 0.22 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
BSS314PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS314PEH6327XTSA1 SMD P channel transistors
BSS314PEH6327XTSA1 SMD P channel transistors
auf Bestellung 8017 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
191+ | 0.37 EUR |
911+ | 0.08 EUR |
964+ | 0.07 EUR |
BSS315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS315PH6327XTSA1 SMD P channel transistors
BSS315PH6327XTSA1 SMD P channel transistors
auf Bestellung 4251 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
676+ | 0.11 EUR |
715+ | 0.10 EUR |
75000+ | 0.10 EUR |
BSS316NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11819 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
459+ | 0.16 EUR |
604+ | 0.12 EUR |
688+ | 0.10 EUR |
1214+ | 0.06 EUR |
1283+ | 0.06 EUR |
BSS606NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 945 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
157+ | 0.46 EUR |
191+ | 0.37 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
BSS670S2LH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS670S2LH6327XTSA SMD N channel transistors
BSS670S2LH6327XTSA SMD N channel transistors
auf Bestellung 5024 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
176+ | 0.41 EUR |
1044+ | 0.07 EUR |
1104+ | 0.07 EUR |
BSS7728NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
BSS7728NH6327XTSA2 SMD N channel transistors
BSS7728NH6327XTSA2 SMD N channel transistors
auf Bestellung 2951 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
439+ | 0.16 EUR |
933+ | 0.08 EUR |
989+ | 0.07 EUR |
BSS806NEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10223 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
224+ | 0.32 EUR |
307+ | 0.23 EUR |
587+ | 0.12 EUR |
910+ | 0.08 EUR |
962+ | 0.07 EUR |
BSS806NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4229 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
254+ | 0.28 EUR |
327+ | 0.22 EUR |
385+ | 0.19 EUR |
455+ | 0.16 EUR |
770+ | 0.09 EUR |
820+ | 0.09 EUR |
BSS816NWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3629 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
407+ | 0.18 EUR |
558+ | 0.13 EUR |
1214+ | 0.06 EUR |
1286+ | 0.06 EUR |
BSS83PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS84PH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Case: PG-SOT23
Drain-source voltage: -60V
Drain current: -0.14A
On-state resistance: 8Ω
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel
Gate charge: 0.37nC
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Case: PG-SOT23
Drain-source voltage: -60V
Drain current: -0.14A
On-state resistance: 8Ω
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel
Gate charge: 0.37nC
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5855 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
481+ | 0.15 EUR |
601+ | 0.12 EUR |
667+ | 0.11 EUR |
769+ | 0.09 EUR |
1690+ | 0.04 EUR |
1786+ | 0.04 EUR |
BSS84PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Case: PG-SOT-323
Drain-source voltage: -60V
Drain current: -0.15A
On-state resistance: 8Ω
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel
Gate charge: 0.37nC
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Case: PG-SOT-323
Drain-source voltage: -60V
Drain current: -0.15A
On-state resistance: 8Ω
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel
Gate charge: 0.37nC
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6277 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
556+ | 0.13 EUR |
711+ | 0.10 EUR |
794+ | 0.09 EUR |
1534+ | 0.05 EUR |
1624+ | 0.04 EUR |
9000+ | 0.04 EUR |
BSS87H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS87H6327FTSA1 SMD N channel transistors
BSS87H6327FTSA1 SMD N channel transistors
auf Bestellung 911 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
108+ | 0.67 EUR |
266+ | 0.27 EUR |
283+ | 0.25 EUR |
10000+ | 0.24 EUR |
BSV236SPH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSV236SPH6327XTSA1 SMD P channel transistors
BSV236SPH6327XTSA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ014NE2LS5IFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ014NE2LS5IFATMA SMD N channel transistors
BSZ014NE2LS5IFATMA SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH