Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149581) > Seite 1251 nach 2494
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BSM200GB60DLC | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 200A Case: AG-34MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw Power dissipation: 730W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO033N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 22A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO080P03SHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Mounting: SMD On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 1.79W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -12.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO110N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 12.1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO150N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 9.3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO201SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 20mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO203PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO203SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2211 Stücke: Lieferzeit 7-14 Tag (e) |
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BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 67mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -4.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2420 Stücke: Lieferzeit 7-14 Tag (e) |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 7.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO301SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Mounting: SMD On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 1.79W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -12.6A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO303SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -7.2A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO613SPVGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Mounting: SMD On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Case: SO8 Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -13.8A Drain-source voltage: -60V Drain current: -3.44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Drain-source voltage: 600V Drain current: 0.12A On-state resistance: 45Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1072 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Drain-source voltage: 240V Drain current: 50mA On-state resistance: 6.5Ω Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Power dissipation: 1.8W Case: SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1719 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP129H6906XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Case: SOT223 Mounting: SMD Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 600V Drain current: 0.12A On-state resistance: 60Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1107 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP149H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Pulsed drain current: 2.6A Drain-source voltage: 200V Drain current: 0.53A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 975 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP149H6906XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A Drain-source voltage: 200V Drain current: 0.53A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Technology: SIPMOS® Kind of channel: depletion Gate-source voltage: ±20V Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSP170PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 842 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 213 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Drain-source voltage: 100V Drain current: 1.2A On-state resistance: 0.8Ω Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 167 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 793 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.17A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2250 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP316PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 795 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 894 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.17A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 521 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2424 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP452 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3048 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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BSP603S2L | INFINEON TECHNOLOGIES | BSP603S2L SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Drain-source voltage: -60V Drain current: -2.9A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1188 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1747 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP742T | INFINEON TECHNOLOGIES | BSP742T Power switches - integrated circuits |
auf Bestellung 1754 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2674 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP752TXUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP762T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2444 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.4A Mounting: SMD Number of channels: 1 Case: PG-SOT223-4 Kind of output: N-Channel Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2346 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP772T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Technology: Classic PROFET Supply voltage: 5...34V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1716 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3753 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Case: SOT223-3 On-state resistance: 35mΩ Output voltage: 42V Output current: 3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2760 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP88H6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 343 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR202NL6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Drain-source voltage: 30V Drain current: 3.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Drain-source voltage: -100V Drain current: -290mA On-state resistance: 2.2Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1180 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR802NL6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 423 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 2067 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 6344 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.63nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.77A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1668 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.77A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26539 Stücke: Lieferzeit 7-14 Tag (e) |
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BSM200GB60DLC |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Power dissipation: 730W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Power dissipation: 730W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO033N03MSGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO080P03SHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO110N03MSGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO150N03MDGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 9.3A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 9.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO201SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO203PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO203SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO207PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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218+ | 0.33 EUR |
222+ | 0.32 EUR |
BSO211PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2420 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
190+ | 0.38 EUR |
205+ | 0.35 EUR |
224+ | 0.32 EUR |
236+ | 0.30 EUR |
BSO220N03MDGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO301SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO303SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO613SPVGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP125H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1072 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
88+ | 0.81 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
1000+ | 0.43 EUR |
BSP129H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1719 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
94+ | 0.77 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
250+ | 0.45 EUR |
500+ | 0.44 EUR |
BSP129H6906XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
76+ | 0.94 EUR |
250+ | 0.57 EUR |
1000+ | 0.56 EUR |
BSP135H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1107 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.87 EUR |
57+ | 1.26 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
1000+ | 0.56 EUR |
BSP149H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
60+ | 1.21 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
1000+ | 0.59 EUR |
BSP149H6906XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS®
Kind of channel: depletion
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS®
Kind of channel: depletion
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP170PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 842 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
81+ | 0.89 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
2000+ | 0.36 EUR |
BSP171PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 213 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
94+ | 0.76 EUR |
135+ | 0.53 EUR |
197+ | 0.36 EUR |
213+ | 0.33 EUR |
BSP295H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP295H6327XTSA1 SMD N channel transistors
BSP295H6327XTSA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP296NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
95+ | 0.76 EUR |
117+ | 0.61 EUR |
163+ | 0.44 EUR |
167+ | 0.43 EUR |
500+ | 0.41 EUR |
1000+ | 0.40 EUR |
BSP297H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP297H6327XTSA1 SMD N channel transistors
BSP297H6327XTSA1 SMD N channel transistors
auf Bestellung 793 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
162+ | 0.44 EUR |
172+ | 0.42 EUR |
BSP315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2250 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
92+ | 0.79 EUR |
212+ | 0.34 EUR |
224+ | 0.32 EUR |
BSP316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP316PH6327XTSA1 SMD P channel transistors
BSP316PH6327XTSA1 SMD P channel transistors
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.15 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
BSP317PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP317PH6327XTSA1 SMD P channel transistors
BSP317PH6327XTSA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP322PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP322PH6327XTSA1 SMD P channel transistors
BSP322PH6327XTSA1 SMD P channel transistors
auf Bestellung 894 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.15 EUR |
154+ | 0.47 EUR |
162+ | 0.44 EUR |
BSP324H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
94+ | 0.77 EUR |
154+ | 0.47 EUR |
163+ | 0.44 EUR |
500+ | 0.42 EUR |
BSP372NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP372NH6327XTSA1 SMD N channel transistors
BSP372NH6327XTSA1 SMD N channel transistors
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.18 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
BSP373NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2424 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
97+ | 0.74 EUR |
106+ | 0.67 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
5000+ | 0.48 EUR |
BSP452 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3048 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.08 EUR |
27+ | 2.72 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
2000+ | 1.52 EUR |
BSP50H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP50H6327XTSA1 NPN SMD Darlington transistors
BSP50H6327XTSA1 NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP603S2L |
Hersteller: INFINEON TECHNOLOGIES
BSP603S2L SMD N channel transistors
BSP603S2L SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP613PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1188 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
72+ | 1.00 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
92+ | 0.78 EUR |
100+ | 0.75 EUR |
BSP61H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1747 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
33+ | 2.22 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
2500+ | 1.22 EUR |
BSP742RIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742T |
Hersteller: INFINEON TECHNOLOGIES
BSP742T Power switches - integrated circuits
BSP742T Power switches - integrated circuits
auf Bestellung 1754 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
BSP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2674 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
29+ | 2.55 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
1000+ | 1.52 EUR |
BSP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP752TXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP752TXUMA1 Power switches - integrated circuits
BSP752TXUMA1 Power switches - integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP762T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2444 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.20 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
1000+ | 1.63 EUR |
2500+ | 1.62 EUR |
BSP76E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2346 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.79 EUR |
40+ | 1.79 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
1000+ | 0.97 EUR |
2000+ | 0.94 EUR |
BSP772T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1716 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.53 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
500+ | 2.04 EUR |
BSP77E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3753 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
35+ | 2.09 EUR |
62+ | 1.16 EUR |
65+ | 1.10 EUR |
2000+ | 1.06 EUR |
BSP78 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BSP88H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP88H6327XTSA1 SMD N channel transistors
BSP88H6327XTSA1 SMD N channel transistors
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.78 EUR |
203+ | 0.35 EUR |
214+ | 0.33 EUR |
BSP89H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
143+ | 0.50 EUR |
168+ | 0.43 EUR |
197+ | 0.36 EUR |
208+ | 0.34 EUR |
500+ | 0.33 EUR |
BSP92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP92PH6327XTSA1 SMD P channel transistors
BSP92PH6327XTSA1 SMD P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
65+ | 1.10 EUR |
178+ | 0.40 EUR |
10000+ | 0.24 EUR |
BSR202NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR202NL6327HTSA1 SMD N channel transistors
BSR202NL6327HTSA1 SMD N channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
BSR302NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
179+ | 0.40 EUR |
221+ | 0.32 EUR |
341+ | 0.21 EUR |
360+ | 0.20 EUR |
1000+ | 0.19 EUR |
BSR316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
169+ | 0.42 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
1000+ | 0.25 EUR |
BSR802NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR802NL6327HTSA1 SMD N channel transistors
BSR802NL6327HTSA1 SMD N channel transistors
auf Bestellung 423 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
3000+ | 0.22 EUR |
BSR92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR92PH6327XTSA1 SMD P channel transistors
BSR92PH6327XTSA1 SMD P channel transistors
auf Bestellung 2067 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 0.58 EUR |
338+ | 0.21 EUR |
358+ | 0.20 EUR |
9000+ | 0.19 EUR |
BSS119NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS119NH6327XTSA1 SMD N channel transistors
BSS119NH6327XTSA1 SMD N channel transistors
auf Bestellung 6344 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
155+ | 0.46 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
9000+ | 0.09 EUR |
BSS123IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1668 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
544+ | 0.13 EUR |
691+ | 0.10 EUR |
802+ | 0.09 EUR |
942+ | 0.08 EUR |
1539+ | 0.05 EUR |
1629+ | 0.04 EUR |
BSS123NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26539 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
424+ | 0.17 EUR |
491+ | 0.15 EUR |
785+ | 0.09 EUR |
1191+ | 0.06 EUR |
1260+ | 0.06 EUR |