Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151639) > Seite 1252 nach 2528
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AUIRFR5305TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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AUIRFR5305TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Power dissipation: 110W Case: TO252AA Mounting: SMD Kind of channel: enhancement On-state resistance: 65mΩ Gate-source voltage: ±20V Pulsed drain current: -110A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AUIRFR8405TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Pulsed drain current: 804A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AUIRFR9024NTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of channel: enhancement Pulsed drain current: -44A Gate charge: 19nC On-state resistance: 0.175Ω Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AUIRFSL8403 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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AUIRFSL8407 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262 Kind of channel: enhancement Mounting: THT Technology: HEXFET® Type of transistor: N-MOSFET Case: TO262 Gate charge: 150nC On-state resistance: 1.4mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Polarisation: unipolar Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AUIRFZ44VZS | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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AUIRG4PH50S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 81A Power dissipation: 217W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 227nC Gate-emitter voltage: ±20V Pulsed collector current: 99A Anzahl je Verpackung: 75 Stücke |
Produkt ist nicht verfügbar |
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AUIRGP35B60PD | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 34A Power dissipation: 123W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 240nC Kind of package: tube Turn-on time: 34ns Turn-off time: 142ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AUIRGP4062D | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 125W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 72A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 64ns Turn-off time: 164ns Anzahl je Verpackung: 400 Stücke |
Produkt ist nicht verfügbar |
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 90A Power dissipation: 227W Case: TO247AC Mounting: THT Kind of package: tube Technology: Trench Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 115ns Turn-off time: 320ns Gate charge: 225nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
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auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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AUIRL7732S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 41W Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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AUIRL7736M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 112A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 63W Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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AUIRL7766M2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 62.5W Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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AUIRLR2905ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Polarisation: unipolar Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 55V Pulsed drain current: 240A Drain current: 42A Gate charge: 35nC On-state resistance: 13.5mΩ Power dissipation: 110W Gate-source voltage: ±16V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AUIRLS3034 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA885E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.19...0.45pF Leakage current: 20nA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1213 Stücke: Lieferzeit 7-14 Tag (e) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Max. off-state voltage: 35V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1V Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.6...1.4pF Leakage current: 20nA Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2272 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2619 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4115 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1835 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1798 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: varicap Capacitance: 0.5pF Leakage current: 20nA Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. forward impulse current: 12A Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4510 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Power dissipation: 0.1W Case: SOT343 Mounting: SMD Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Type of diode: switching Reverse recovery time: 80ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1474 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS116E6433HTMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 0.1A Max. forward impulse current: 0.5A Max. off-state voltage: 25V Semiconductor structure: double series Type of diode: Schottky switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2765 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS12507WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW Power dissipation: 0.25W Type of diode: Schottky switching Mounting: SMD Case: SOT343 Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double independent Max. forward impulse current: 0.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Case: SOD323 Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6255 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SC79 Type of diode: switching Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Max. off-state voltage: 85V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3291 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1735 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13452 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4750 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 7588 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS2103WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD323 Kind of package: reel; tape Power dissipation: 0.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7930 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS21E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2871 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS28E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double independent Features of semiconductor devices: ultrafast switching Case: SOT143 Power dissipation: 0.33W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1907 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS28WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape Power dissipation: 0.25W Case: SOT343 Mounting: SMD Load current: 0.2A Max. off-state voltage: 85V Semiconductor structure: double independent Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A Type of diode: Schottky rectifying Case: SC79 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1660 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Kind of package: reel; tape Electrical mounting: SMT Load current: 0.9A Max. forward impulse current: 5A Max. off-state voltage: 30V Type of bridge rectifier: single-phase Features of semiconductor devices: Schottky Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4435 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A Mounting: SMD Type of diode: Schottky rectifying Case: SOD323 Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS4002ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 0.2A Max. forward impulse current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOT143 Features of semiconductor devices: Schottky Anzahl je Verpackung: 1 Stücke |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS4004E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Power dissipation: 0.25W Case: SOT23 Mounting: SMD Type of diode: Schottky switching Load current: 0.12A Max. forward impulse current: 0.2A Max. off-state voltage: 40V Semiconductor structure: double series Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7240 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS4005E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common cathode; double Max. forward impulse current: 0.2A Power dissipation: 0.25W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS4005WH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BAS4006E6327HTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BAS4006WH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW Case: SOT143 Mounting: SMD Type of diode: Schottky switching Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V Semiconductor structure: double independent Anzahl je Verpackung: 1 Stücke |
auf Bestellung 895 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS40E6327HTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS5202VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW Type of diode: Schottky rectifying Case: SC79 Max. off-state voltage: 45V Load current: 0.75A Semiconductor structure: single diode Max. forward impulse current: 2A Power dissipation: 0.5W Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4237 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS7007WH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAS7002VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Power dissipation: 0.25W Max. forward impulse current: 0.1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2356 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFR5305TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR5305TRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR8405TRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR9024NTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFSL8403 |
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Hersteller: INFINEON TECHNOLOGIES
AUIRFSL8403 THT N channel transistors
AUIRFSL8403 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFSL8407 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO262
Gate charge: 150nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Polarisation: unipolar
Anzahl je Verpackung: 50 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO262
Gate charge: 150nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Polarisation: unipolar
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFZ44VZS |
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Hersteller: INFINEON TECHNOLOGIES
AUIRFZ44VZS SMD N channel transistors
AUIRFZ44VZS SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRG4PH50S |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Anzahl je Verpackung: 75 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Anzahl je Verpackung: 75 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGP35B60PD |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGP4062D |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGP4066D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGSL4062D1 |
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Hersteller: INFINEON TECHNOLOGIES
AUIRGSL4062D1 THT IGBT transistors
AUIRGSL4062D1 THT IGBT transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
50+ | 4.96 EUR |
AUIRL1404ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7732S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7736M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL7766M2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLR2905ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 35nC
On-state resistance: 13.5mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 35nC
On-state resistance: 13.5mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLS3034 |
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Hersteller: INFINEON TECHNOLOGIES
AUIRLS3034 SMD N channel transistors
AUIRLS3034 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
335+ | 0.21 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
485+ | 0.15 EUR |
515+ | 0.14 EUR |
BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
335+ | 0.21 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
485+ | 0.15 EUR |
515+ | 0.14 EUR |
BA885E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1064+ | 0.067 EUR |
1087+ | 0.066 EUR |
BA89202VH6127XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2272 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
582+ | 0.12 EUR |
962+ | 0.074 EUR |
1260+ | 0.057 EUR |
1719+ | 0.042 EUR |
1819+ | 0.039 EUR |
BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
271+ | 0.26 EUR |
339+ | 0.21 EUR |
543+ | 0.13 EUR |
1011+ | 0.071 EUR |
1069+ | 0.067 EUR |
BAR6303WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2619 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
379+ | 0.19 EUR |
428+ | 0.17 EUR |
500+ | 0.14 EUR |
618+ | 0.12 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
556+ | 0.13 EUR |
658+ | 0.11 EUR |
685+ | 0.1 EUR |
BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4115 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
291+ | 0.25 EUR |
315+ | 0.23 EUR |
353+ | 0.2 EUR |
368+ | 0.19 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
556+ | 0.13 EUR |
658+ | 0.11 EUR |
685+ | 0.1 EUR |
BAR6403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1835 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
618+ | 0.12 EUR |
667+ | 0.11 EUR |
695+ | 0.1 EUR |
BAR6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1798 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
296+ | 0.24 EUR |
384+ | 0.19 EUR |
573+ | 0.12 EUR |
889+ | 0.081 EUR |
940+ | 0.076 EUR |
1000+ | 0.073 EUR |
BAR6502VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAR66E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4510 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
295+ | 0.24 EUR |
329+ | 0.22 EUR |
385+ | 0.19 EUR |
404+ | 0.18 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
BAR81WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
177+ | 0.41 EUR |
199+ | 0.36 EUR |
227+ | 0.32 EUR |
240+ | 0.3 EUR |
BAS116E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1474 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
447+ | 0.16 EUR |
556+ | 0.13 EUR |
794+ | 0.09 EUR |
1374+ | 0.052 EUR |
1454+ | 0.049 EUR |
BAS116E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS116E6433 SMD universal diodes
BAS116E6433 SMD universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS12504WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2765 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
82+ | 0.87 EUR |
94+ | 0.77 EUR |
135+ | 0.53 EUR |
223+ | 0.32 EUR |
236+ | 0.3 EUR |
BAS12507WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS140WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6255 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
274+ | 0.26 EUR |
438+ | 0.16 EUR |
1137+ | 0.063 EUR |
1202+ | 0.059 EUR |
BAS1602VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SC79
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Max. off-state voltage: 85V
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SC79
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Max. off-state voltage: 85V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3291 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
807+ | 0.089 EUR |
893+ | 0.08 EUR |
1064+ | 0.067 EUR |
1183+ | 0.06 EUR |
1309+ | 0.055 EUR |
1386+ | 0.052 EUR |
BAS1603WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
895+ | 0.08 EUR |
995+ | 0.072 EUR |
1210+ | 0.059 EUR |
1280+ | 0.056 EUR |
BAS16E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13452 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
777+ | 0.092 EUR |
893+ | 0.08 EUR |
1087+ | 0.066 EUR |
1211+ | 0.059 EUR |
1306+ | 0.055 EUR |
1498+ | 0.048 EUR |
1583+ | 0.045 EUR |
BAS16UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
455+ | 0.16 EUR |
491+ | 0.15 EUR |
511+ | 0.14 EUR |
BAS170WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS170WE6327HTSA1 SMD Schottky diodes
BAS170WE6327HTSA1 SMD Schottky diodes
auf Bestellung 7588 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
149+ | 0.48 EUR |
893+ | 0.08 EUR |
944+ | 0.076 EUR |
BAS2103WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
334+ | 0.21 EUR |
382+ | 0.19 EUR |
538+ | 0.13 EUR |
627+ | 0.11 EUR |
1069+ | 0.067 EUR |
1132+ | 0.063 EUR |
BAS21E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2871 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
447+ | 0.16 EUR |
527+ | 0.14 EUR |
652+ | 0.11 EUR |
763+ | 0.094 EUR |
890+ | 0.08 EUR |
1348+ | 0.053 EUR |
BAS28E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1907 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
321+ | 0.22 EUR |
353+ | 0.2 EUR |
477+ | 0.15 EUR |
658+ | 0.11 EUR |
705+ | 0.1 EUR |
3000+ | 0.099 EUR |
BAS28WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
502+ | 0.14 EUR |
3000+ | 0.084 EUR |
BAS3005B02VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1660 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
368+ | 0.19 EUR |
391+ | 0.18 EUR |
477+ | 0.15 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
BAS3007ARPPE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4435 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
138+ | 0.52 EUR |
147+ | 0.49 EUR |
240+ | 0.3 EUR |
253+ | 0.28 EUR |
3000+ | 0.27 EUR |
BAS3010A03WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
243+ | 0.29 EUR |
309+ | 0.23 EUR |
343+ | 0.21 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
BAS4002ARPPE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
183+ | 0.39 EUR |
195+ | 0.37 EUR |
239+ | 0.3 EUR |
252+ | 0.28 EUR |
BAS4004E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
391+ | 0.18 EUR |
477+ | 0.15 EUR |
828+ | 0.086 EUR |
1076+ | 0.066 EUR |
1139+ | 0.063 EUR |
BAS4005E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
363+ | 0.2 EUR |
400+ | 0.18 EUR |
515+ | 0.14 EUR |
583+ | 0.12 EUR |
697+ | 0.1 EUR |
1071+ | 0.067 EUR |
BAS4005WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS4005WH6327XTSA1 SMD Schottky diodes
BAS4005WH6327XTSA1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS4006E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS4006E6327HTSA1 SMD Schottky diodes
BAS4006E6327HTSA1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS4006WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS4006WH6327XTSA1 SMD Schottky diodes
BAS4006WH6327XTSA1 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS4007E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: double independent
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: double independent
Anzahl je Verpackung: 1 Stücke
auf Bestellung 895 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
365+ | 0.2 EUR |
459+ | 0.16 EUR |
511+ | 0.14 EUR |
582+ | 0.12 EUR |
642+ | 0.11 EUR |
BAS40E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS40E6327 SMD Schottky diodes
BAS40E6327 SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS5202VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Power dissipation: 0.5W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Power dissipation: 0.5W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4237 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
202+ | 0.35 EUR |
232+ | 0.31 EUR |
325+ | 0.22 EUR |
376+ | 0.19 EUR |
625+ | 0.11 EUR |
BAS7007WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BAS70-07W SMD Schottky diodes
BAS70-07W SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS7002VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2356 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
353+ | 0.2 EUR |
463+ | 0.15 EUR |
516+ | 0.14 EUR |
794+ | 0.09 EUR |
848+ | 0.084 EUR |