Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149681) > Seite 1254 nach 2495
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SPW20N60C3 | Infineon Technologies |
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3 |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPW47N60C3 | Infineon Technologies | MOSFET N-кан, 650 В, 47 А, TO-247 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRF7342TRPBF | Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SO |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW40N60DT | Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 306mW TO-247 |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW40N60H3 | Infineon Technologies |
IGBT 600V 80A 306.0W TO247-3 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW50N65F5 | Infineon Technologies |
IGBT 650V 80A 305W PG-TO247-3 |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW75N60T | Infineon Technologies |
IGBTs - Single, 600V, 80A, TO-247-3 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SGP15N120XKSA1 | Infineon Technologies |
IGBT 1200V 30A 198W TO220-3 |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BFR181WH6327 | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BFS17WH6327XTSA1 | Infineon Technologies |
RF TRANS NPN 15V 1.4GHZ SOT-323 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FS50R06W1E3 | Infineon Technologies | 600 V, 50 A sixpack IGBT module |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FM25V05-G | Infineon Technologies |
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTS432D2 E3062A | Infineon Technologies | ИС переключателя для электропитания TO-220AB/5 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ITS4100S-SJ-N | Infineon Technologies |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 992 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC10I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -1...1A Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...18V Number of channels: 1 Voltage class: 600/650/1200V Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC30I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -3...3A Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...18V Number of channels: 1 Voltage class: 600/650/1200V Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 998 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC60I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Voltage class: 600/650/1200V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -0.5...0.5A Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Number of channels: 1 Voltage class: 1.2kV Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2096 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDN7512BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-SOT23-5 Output current: -8...4A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1921 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Kind of package: reel; tape Case: PG-SOT23-6 Type of integrated circuit: driver Technology: EiceDRIVER™ Mounting: SMD Kind of integrated circuit: gate driver; low-side Topology: single transistor Output current: -8...4A Number of channels: 1 Supply voltage: 4.5...20V Voltage class: 80V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1370 Stücke: Lieferzeit 7-14 Tag (e) |
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2ED020I12-FI | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-18 Output current: -2...1A Number of channels: 2 Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 0...5V; 14...18V Voltage class: 1.2kV Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 405 Stücke: Lieferzeit 7-14 Tag (e) |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Technology: EiceDRIVER™ Voltage class: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1258 Stücke: Lieferzeit 7-14 Tag (e) |
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2EDN7524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -5...5A Number of channels: 2 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Voltage class: 20V Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1430 Stücke: Lieferzeit 7-14 Tag (e) |
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| 2EDN8524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -5...5A Number of channels: 2 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Voltage class: 20V Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12076 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5827 Stücke: Lieferzeit 7-14 Tag (e) |
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Turn-on time: 30ns Turn-off time: 178ns Technology: TRENCHSTOP™ 5 Manufacturer series: F5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 177 Stücke: Lieferzeit 7-14 Tag (e) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Turn-on time: 31ns Turn-off time: 160ns Technology: TRENCHSTOP™ 5 Manufacturer series: H5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 167 Stücke: Lieferzeit 7-14 Tag (e) |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 306 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFB8405 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Mounting: THT Kind of package: tube Technology: Trench Type of transistor: IGBT Case: TO262 Turn-on time: 35ns Gate charge: 77nC Turn-off time: 176ns Gate-emitter voltage: ±20V Collector current: 39A Pulsed collector current: 72A Power dissipation: 123W Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA885E6327 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Case: SOT23 Mounting: SMD Max. off-state voltage: 50V Features of semiconductor devices: PIN; RF Kind of package: reel; tape Type of diode: switching Semiconductor structure: single diode Capacitance: 0.19...0.45pF Leakage current: 20nA Load current: 50mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1201 Stücke: Lieferzeit 7-14 Tag (e) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Mounting: SMD Case: SC79 Features of semiconductor devices: PIN; RF Kind of package: reel; tape Semiconductor structure: single diode Type of diode: switching Capacitance: 0.6...1.4pF Leakage current: 20nA Reverse recovery time: 120ns Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 35V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2272 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5985 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2144 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Features of semiconductor devices: PIN; RF Case: SC79 Type of diode: switching Semiconductor structure: single diode Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2590 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Features of semiconductor devices: PIN; RF Case: SC79 Type of diode: switching Semiconductor structure: single diode Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 535 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1473 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. forward impulse current: 12A Max. off-state voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4510 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Power dissipation: 0.1W Case: SOT343 Mounting: SMD Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Type of diode: switching Reverse recovery time: 80ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1273 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 0.1A Max. forward impulse current: 0.5A Max. off-state voltage: 25V Semiconductor structure: double series Type of diode: Schottky switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2765 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V Type of diode: Schottky switching Semiconductor structure: single diode Case: SOD323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4784 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SC79 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3271 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1585 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12782 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4430 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOD323 Mounting: SMD Type of diode: Schottky switching Load current: 70mA Max. forward impulse current: 0.1A Max. off-state voltage: 70V Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5037 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS2103WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape Load current: 0.25A Power dissipation: 0.25W Max. off-state voltage: 250V Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 Type of diode: switching Features of semiconductor devices: ultrafast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7930 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS21E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2846 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS28E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double independent Features of semiconductor devices: ultrafast switching Case: SOT143 Power dissipation: 0.33W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS28WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape Power dissipation: 0.25W Case: SOT343 Mounting: SMD Load current: 0.2A Max. off-state voltage: 85V Semiconductor structure: double independent Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A Mounting: SMD Case: SC79 Max. forward impulse current: 5A Load current: 0.5A Semiconductor structure: single diode Max. off-state voltage: 30V Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1660 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Max. forward impulse current: 5A Load current: 0.9A Features of semiconductor devices: Schottky Max. off-state voltage: 30V Type of bridge rectifier: single-phase Kind of package: reel; tape Electrical mounting: SMT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3268 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A Mounting: SMD Case: SOD323 Max. forward impulse current: 10A Load current: 1A Semiconductor structure: single diode Max. off-state voltage: 30V Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2338 Stücke: Lieferzeit 7-14 Tag (e) |
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| SPW20N60C3 |
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Hersteller: Infineon Technologies
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SPW47N60C3 |
Hersteller: Infineon Technologies
MOSFET N-кан, 650 В, 47 А, TO-247
MOSFET N-кан, 650 В, 47 А, TO-247
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRF7342TRPBF |
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Hersteller: Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8SO
MOSFET 2P-CH 55V 3.4A 8SO
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW40N60DT |
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306mW TO-247
Trans IGBT Chip N-CH 600V 80A 306mW TO-247
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW40N60H3 |
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Hersteller: Infineon Technologies
IGBT 600V 80A 306.0W TO247-3
IGBT 600V 80A 306.0W TO247-3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW50N65F5 |
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Hersteller: Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
IGBT 650V 80A 305W PG-TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW75N60T | ![]() |
Hersteller: Infineon Technologies
IGBTs - Single, 600V, 80A, TO-247-3
IGBTs - Single, 600V, 80A, TO-247-3
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SGP15N120XKSA1 |
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Hersteller: Infineon Technologies
IGBT 1200V 30A 198W TO220-3
IGBT 1200V 30A 198W TO220-3
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BFR181WH6327 |
Hersteller: Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT323-3
RF TRANS NPN 12V 8GHZ SOT323-3
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BFS17WH6327XTSA1 |
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Hersteller: Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT-323
RF TRANS NPN 15V 1.4GHZ SOT-323
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FS50R06W1E3 |
Hersteller: Infineon Technologies
600 V, 50 A sixpack IGBT module
600 V, 50 A sixpack IGBT module
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FM25V05-G |
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Hersteller: Infineon Technologies
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BTS432D2 E3062A |
Hersteller: Infineon Technologies
ИС переключателя для электропитания TO-220AB/5
ИС переключателя для электропитания TO-220AB/5
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| ITS4100S-SJ-N |
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Hersteller: Infineon Technologies
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 1ED020I12F2XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 992 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.33 EUR |
| 20+ | 3.72 EUR |
| 21+ | 3.42 EUR |
| 1EDC10I12MHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 1EDC30I12MHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 998 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.68 EUR |
| 26+ | 2.79 EUR |
| 28+ | 2.63 EUR |
| 50+ | 2.55 EUR |
| 1EDC60I12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.07 EUR |
| 25+ | 2.9 EUR |
| 1EDI05I12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2096 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 41+ | 1.74 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 250+ | 1.27 EUR |
| 1EDN7512BXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1921 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 123+ | 0.58 EUR |
| 1EDN7550BXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 75+ | 0.96 EUR |
| 106+ | 0.67 EUR |
| 112+ | 0.64 EUR |
| 3000+ | 0.61 EUR |
| 2ED020I12-FI |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 405 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.28 EUR |
| 29+ | 2.55 EUR |
| 30+ | 2.42 EUR |
| 500+ | 2.33 EUR |
| 2EDL05N06PFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Technology: EiceDRIVER™
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Technology: EiceDRIVER™
Voltage class: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1258 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 42+ | 1.73 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
| 500+ | 1.36 EUR |
| 2EDN7524FXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 85+ | 0.85 EUR |
| 90+ | 0.8 EUR |
| 2500+ | 0.77 EUR |
| 2EDN8524FXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 87+ | 0.83 EUR |
| 112+ | 0.64 EUR |
| 119+ | 0.6 EUR |
| 2500+ | 0.58 EUR |
| 2N7002DWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12076 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 338+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 644+ | 0.11 EUR |
| 895+ | 0.08 EUR |
| 1027+ | 0.07 EUR |
| 2N7002H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5827 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 916+ | 0.078 EUR |
| 1053+ | 0.068 EUR |
| 1421+ | 0.05 EUR |
| 1471+ | 0.049 EUR |
| AIGW40N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.26 EUR |
| AIGW40N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.82 EUR |
| 11+ | 6.94 EUR |
| 30+ | 6.38 EUR |
| 60+ | 6.05 EUR |
| 90+ | 5.86 EUR |
| AIKP20N60CTAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 306 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 17+ | 4.43 EUR |
| 18+ | 3.98 EUR |
| 50+ | 3.7 EUR |
| 250+ | 3.69 EUR |
| AUIRFB8405 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 10+ | 7.15 EUR |
| AUIRGSL4062D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 395+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 395+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| BA885E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Case: SOT23
Mounting: SMD
Max. off-state voltage: 50V
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Load current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Case: SOT23
Mounting: SMD
Max. off-state voltage: 50V
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Load current: 50mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1201 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1064+ | 0.067 EUR |
| 1087+ | 0.066 EUR |
| BA89202VH6127XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 35V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 35V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 582+ | 0.12 EUR |
| 962+ | 0.074 EUR |
| 1260+ | 0.057 EUR |
| 1701+ | 0.042 EUR |
| 1799+ | 0.04 EUR |
| BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5985 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 271+ | 0.26 EUR |
| 339+ | 0.21 EUR |
| 543+ | 0.13 EUR |
| 1011+ | 0.071 EUR |
| 1069+ | 0.067 EUR |
| BAR6303WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 481+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| 633+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 820+ | 0.087 EUR |
| 878+ | 0.082 EUR |
| BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 334+ | 0.21 EUR |
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2590 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 363+ | 0.2 EUR |
| 410+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| 521+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 334+ | 0.21 EUR |
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| BAR6403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 535 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 535+ | 0.13 EUR |
| BAR6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1473 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 296+ | 0.24 EUR |
| 384+ | 0.19 EUR |
| 573+ | 0.12 EUR |
| 885+ | 0.081 EUR |
| 935+ | 0.077 EUR |
| 1000+ | 0.074 EUR |
| BAR66E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4510 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 374+ | 0.19 EUR |
| 417+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 496+ | 0.14 EUR |
| BAR81WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 177+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 227+ | 0.32 EUR |
| 240+ | 0.3 EUR |
| BAS116E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1273 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 447+ | 0.16 EUR |
| 556+ | 0.13 EUR |
| 794+ | 0.09 EUR |
| 1273+ | 0.056 EUR |
| 3000+ | 0.049 EUR |
| BAS12504WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2765 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 85+ | 0.85 EUR |
| 96+ | 0.75 EUR |
| 139+ | 0.52 EUR |
| 222+ | 0.32 EUR |
| 234+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| BAS140WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4784 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 285+ | 0.25 EUR |
| 466+ | 0.15 EUR |
| 1137+ | 0.063 EUR |
| 1202+ | 0.059 EUR |
| BAS1602VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3271 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 893+ | 0.08 EUR |
| 1064+ | 0.067 EUR |
| 1183+ | 0.06 EUR |
| 1299+ | 0.055 EUR |
| 1374+ | 0.052 EUR |
| BAS1603WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1585 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 410+ | 0.17 EUR |
| 895+ | 0.08 EUR |
| 995+ | 0.072 EUR |
| 1200+ | 0.06 EUR |
| 1270+ | 0.056 EUR |
| BAS16E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12782 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 777+ | 0.092 EUR |
| 893+ | 0.08 EUR |
| 1087+ | 0.066 EUR |
| 1211+ | 0.059 EUR |
| 1306+ | 0.055 EUR |
| 1484+ | 0.048 EUR |
| 1568+ | 0.046 EUR |
| BAS16UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 491+ | 0.15 EUR |
| 511+ | 0.14 EUR |
| BAS170WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5037 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 285+ | 0.25 EUR |
| 465+ | 0.15 EUR |
| 887+ | 0.081 EUR |
| 939+ | 0.076 EUR |
| 9000+ | 0.074 EUR |
| 15000+ | 0.073 EUR |
| BAS2103WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Load current: 0.25A
Power dissipation: 0.25W
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Load current: 0.25A
Power dissipation: 0.25W
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7930 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| 382+ | 0.19 EUR |
| 538+ | 0.13 EUR |
| 627+ | 0.11 EUR |
| 1069+ | 0.067 EUR |
| 1132+ | 0.063 EUR |
| BAS21E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2846 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 447+ | 0.16 EUR |
| 527+ | 0.14 EUR |
| 652+ | 0.11 EUR |
| 763+ | 0.094 EUR |
| 890+ | 0.08 EUR |
| 1330+ | 0.054 EUR |
| BAS28E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 321+ | 0.22 EUR |
| 353+ | 0.2 EUR |
| 477+ | 0.15 EUR |
| 658+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 3000+ | 0.099 EUR |
| BAS28WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 502+ | 0.14 EUR |
| 3000+ | 0.084 EUR |
| BAS3005B02VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1660 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 388+ | 0.18 EUR |
| 477+ | 0.15 EUR |
| 596+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| BAS3007ARPPE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3268 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 155+ | 0.46 EUR |
| 164+ | 0.44 EUR |
| 240+ | 0.3 EUR |
| 253+ | 0.28 EUR |
| 1000+ | 0.27 EUR |
| BAS3010A03WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Case: SOD323
Max. forward impulse current: 10A
Load current: 1A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Case: SOD323
Max. forward impulse current: 10A
Load current: 1A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2338 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 242+ | 0.3 EUR |
| 281+ | 0.25 EUR |
| 317+ | 0.23 EUR |
| 355+ | 0.2 EUR |
| 521+ | 0.14 EUR |
| 550+ | 0.13 EUR |





















