Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124725) > Seite 2037 nach 2079
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| S25FL256SAGMFIR11 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Case: SOIC16 Mounting: SMD Kind of package: tube Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Operating frequency: 133MHz Memory: 256Mb FLASH Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 705 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S25FL512SAGMFIR11 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Case: SOIC16 Mounting: SMD Kind of package: tube Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Operating frequency: 133MHz Memory: 512Mb FLASH Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 47 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY8C20234-12LKXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 12MHz; QFN16; 512BSRAM,8kBFLASH Type of integrated circuit: PSoC microcontroller Interface: I2C; SPI; UART; USB 2.0 Supply voltage: 2.4...5.25V DC Number of inputs/outputs: 13 Integrated circuit features: CapSense Kind of core: 8-bit Memory: 0.5kB SRAM; 8kB FLASH Mounting: SMD Clock frequency: 12MHz Case: QFN16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 980 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| S70GL02GT11FHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: FLASH memory Operating temperature: -40...105°C Application: automotive Memory: 2Gb FLASH Kind of interface: parallel Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR Access time: 110ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFH7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 85A Power dissipation: 104W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 3134 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5020TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Case: PQFN5X6 Kind of package: reel Polarisation: unipolar Power dissipation: 3.6W Drain current: 5.1A Drain-source voltage: 200V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFH5300TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFHM830TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Technology: HEXFET® Kind of channel: enhancement Polarisation: unipolar Case: PQFN3.3X3.3 Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Power dissipation: 2.7W Drain current: 21A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRFH7085TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 147A; 156W; PQFN8 Mounting: SMD Power dissipation: 156W Gate charge: 110nC Polarisation: unipolar Drain current: 147A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Case: PQFN8 On-state resistance: 3.6mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFH8325TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ISZ0702NLSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 86A Power dissipation: 65W Case: PG-TDSON-8 FL On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ISC0702NLSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 135A Power dissipation: 100W Case: PG-TDSON-8 On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFIZ44NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 28A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 43.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFI4212H-117PXKMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 44A Power dissipation: 7W Case: TO220-5 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Half-Bridge Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ICL5101XUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time Type of integrated circuit: driver Topology: resonant LLC Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-16-23 Output current: 0.7A Number of channels: 1 Integrated circuit features: dead time Mounting: SMD Operating voltage: 8.6...17.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF630NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 82W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 23.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 579 Stücke: Lieferzeit 14-21 Tag (e) |
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| ITS6080SEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14 Type of integrated circuit: power switch Mounting: SMD On-state resistance: 80mΩ Output current: 8A Active logical level: high Kind of output: N-Channel Case: PG-TSDSO-14 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 7266 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF300P227 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 107nC Technology: StrongIRFET™ Drain current: 35A Gate-source voltage: ±20V On-state resistance: 40mΩ Power dissipation: 313W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFP054NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8C5888AXI-LP096 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH Number of inputs/outputs: 72 Type of integrated circuit: ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: watchdog Clock frequency: 80MHz Kind of core: 32-bit Memory: 64kB SRAM; 256kB FLASH Case: TQFP100 Interface: GPIO; I2C; SPI; UART; USB Mounting: SMD Supply voltage: 1.71...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Power dissipation: 52W Case: PG-TDSON-8 On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ Gate-source voltage: ±20V |
auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2302STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Power: 625mW Turn-off time: 200ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Supply voltage: 5...20V DC Output current: -0.35...0.2A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR2308SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Power: 625mW Turn-off time: 200ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Supply voltage: 10...20V DC Output current: -0.35...0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IR2304STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: high-side; low-side Number of channels: 2 Input voltage: 10...20V Output current: 0.13A Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IR2301STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET Type of integrated circuit: driver Case: SOIC8 Mounting: SMD Operating temperature: -40...150°C Kind of integrated circuit: high-side; low-side Number of channels: 2 Output current: 0.2A Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY7C68013A-100AXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: TQFP100 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: 0...70°C Number of inputs/outputs: 40 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CY7C68013A-128AXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128 Type of integrated circuit: USB controller Integrated circuit features: USB peripheral driver Operating temperature: -40...85°C Supply voltage: 3...3.6V DC Number of inputs/outputs: 40 Kind of core: 8-bit Interface: 8bit; 16bit; I2C; USB 2.0 Mounting: SMD Case: TQFP128 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ICE3BR0665JXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Application: SMPS Operating voltage: 10.5...25V DC Output current: 4.8A |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3BR1765JXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Frequency: 65kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3A2065ELJFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75% Type of integrated circuit: PMIC Operating voltage: 10.5...26V DC Topology: flyback Mounting: THT Breakdown voltage: 650V Input voltage: 80...265V Output current: 10.3A Operating temperature: -25...130°C Duty cycle factor: 0...75% Application: SMPS Power: 57/28W Case: DIP8 Kind of integrated circuit: PWM controller Number of channels: 1 Frequency: 0.1MHz |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| ICE3AR0680JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V Type of integrated circuit: PMIC Operating voltage: 10.5...25V DC Topology: flyback Mounting: THT Breakdown voltage: 800V Input voltage: 80...265V Output current: 20A Operating temperature: -25...130°C Duty cycle factor: 0...75% Application: SMPS Power: 82/52W Case: DIP7 Kind of integrated circuit: PWM controller Number of channels: 1 Frequency: 0.1MHz |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| ICE3RBR0665JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 71/47W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICE3RBR1765JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 44/29W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ICE3PCS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ICE3RBR4765JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 26/18W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ICE3B1565JFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W Type of integrated circuit: PMIC Frequency: 67kHz Case: DIP8 Mounting: THT Operating temperature: -25...130°C Topology: flyback Breakdown voltage: 650V Power: 42W |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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| ICE3RBR4765JGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W Type of integrated circuit: PMIC Frequency: 65kHz Case: PG-DSO-12 Mounting: SMD Operating temperature: -40...130°C Topology: flyback Input voltage: 10.5...25V Breakdown voltage: 650V Power: 24W |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66502BMRXUSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 6.3A Pulsed drain current: 15A Case: GaNPX Gate-source voltage: -10...7V On-state resistance: 516mΩ Mounting: SMD Gate charge: 1.6nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GS0650306LLMRXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 67A Case: TOLL Gate-source voltage: -10...7V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Gate current: 20mA Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FM25L16B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Interface: SPI Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 81 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FM25L16B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: SPI Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IR2125PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -2...1A Power: 1W Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2121PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2...1A Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 5V Turn-on time: 150ns Power: 1W Turn-off time: 105ns |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2125SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO16 Output current: -2...1A Power: 1.25W Number of channels: 1 Supply voltage: 12...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 994 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2128STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPB160N04S4H1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 167W Case: TO263-7 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 137nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPB160N04S4LH1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Power: 625mW Turn-off time: 185ns |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4141N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD Technology: Classic PROFET Kind of integrated circuit: high-side Type of integrated circuit: power switch Mounting: SMD Kind of output: N-Channel Case: PG-SOT223-4 On-state resistance: 0.175Ω Output current: 0.7A Output voltage: 12...45V Number of channels: 1 |
auf Bestellung 2411 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4880R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: BSSOP36 Kind of output: N-Channel On-state resistance: 0.15Ω Output current: 0.625A Supply voltage: 11...45V DC Technology: Classic PROFET Kind of integrated circuit: high-side |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS452T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5 Kind of output: N-Channel Technology: Classic PROFET Case: TO252-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 0.15Ω Mounting: SMD Supply voltage: 6...52V DC Output current: 1.8A Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTS4175SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.175Ω Mounting: SMD Type of integrated circuit: power switch Number of channels: 1 Output current: 1.3A Supply voltage: 6...52V DC Technology: Classic PROFET Kind of integrated circuit: high-side Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK On-state resistance: 35mΩ Supply voltage: 4.7...41V DC Technology: SIPMOS™ Operating temperature: -40...150°C Power dissipation: 75W Integrated circuit features: thermal protection Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SPD06N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Pulsed drain current: 18A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
IRFR1205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Polarisation: unipolar Technology: HEXFET® Drain current: 37A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET Power dissipation: 107W |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Type of integrated circuit: RF switch Number of channels: 4 Mounting: SMD Case: ATSLP-9-3 Supply voltage: 1.65...1.95V DC Interface: MIPI Bandwidth: 0.05...6GHz Application: telecommunication Output configuration: SP4T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Power: 625mW Turn-off time: 188ns Number of channels: 2 Topology: MOSFET half-bridge Output current: -4...4A |
auf Bestellung 1298 Stücke: Lieferzeit 14-21 Tag (e) |
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| S25FL256SAGMFIR11 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 705 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL512SAGMFIR11 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C20234-12LKXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; QFN16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: I2C; SPI; UART; USB 2.0
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Integrated circuit features: CapSense
Kind of core: 8-bit
Memory: 0.5kB SRAM; 8kB FLASH
Mounting: SMD
Clock frequency: 12MHz
Case: QFN16
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; QFN16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: I2C; SPI; UART; USB 2.0
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Integrated circuit features: CapSense
Kind of core: 8-bit
Memory: 0.5kB SRAM; 8kB FLASH
Mounting: SMD
Clock frequency: 12MHz
Case: QFN16
Produkt ist nicht verfügbar
Mindestbestellmenge: 980 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S70GL02GT11FHB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7440TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 3134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.28 EUR |
| 45+ | 1.9 EUR |
| 52+ | 1.67 EUR |
| 66+ | 1.3 EUR |
| IRFH5020TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN5X6
Kind of package: reel
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 5.1A
Drain-source voltage: 200V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN5X6
Kind of package: reel
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 5.1A
Drain-source voltage: 200V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5300TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFHM830TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: PQFN3.3X3.3
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Power dissipation: 2.7W
Drain current: 21A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: PQFN3.3X3.3
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Power dissipation: 2.7W
Drain current: 21A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7085TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 147A; 156W; PQFN8
Mounting: SMD
Power dissipation: 156W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: PQFN8
On-state resistance: 3.6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 147A; 156W; PQFN8
Mounting: SMD
Power dissipation: 156W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: PQFN8
On-state resistance: 3.6mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8325TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ0702NLSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC0702NLSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFIZ44NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI4212H-117PXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 44A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 44A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICL5101XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF630NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 579 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 93+ | 0.92 EUR |
| 107+ | 0.8 EUR |
| 118+ | 0.73 EUR |
| 125+ | 0.68 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.6 EUR |
| ITS6080SEPDXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.65 EUR |
| IRLL024NTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 96+ | 0.89 EUR |
| 134+ | 0.63 EUR |
| 155+ | 0.55 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.3 EUR |
| 5000+ | 0.29 EUR |
| IRF300P227 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 107nC
Technology: StrongIRFET™
Drain current: 35A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Power dissipation: 313W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 107nC
Technology: StrongIRFET™
Drain current: 35A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Power dissipation: 313W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP054NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.24 EUR |
| 35+ | 2.49 EUR |
| 40+ | 2.18 EUR |
| 50+ | 2.02 EUR |
| 100+ | 1.98 EUR |
| CY8C5888AXI-LP096 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Number of inputs/outputs: 72
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 80MHz
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Interface: GPIO; I2C; SPI; UART; USB
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Number of inputs/outputs: 72
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 80MHz
Kind of core: 32-bit
Memory: 64kB SRAM; 256kB FLASH
Case: TQFP100
Interface: GPIO; I2C; SPI; UART; USB
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC032N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 1122 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 1.81 EUR |
| 57+ | 1.51 EUR |
| 65+ | 1.31 EUR |
| 76+ | 1.12 EUR |
| IR2302STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2308SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2304STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2301STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Output current: 0.2A
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Output current: 0.2A
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S29AL008J55TFIR23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C68013A-100AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C68013A-128AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Integrated circuit features: USB peripheral driver
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of inputs/outputs: 40
Kind of core: 8-bit
Interface: 8bit; 16bit; I2C; USB 2.0
Mounting: SMD
Case: TQFP128
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Integrated circuit features: USB peripheral driver
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of inputs/outputs: 40
Kind of core: 8-bit
Interface: 8bit; 16bit; I2C; USB 2.0
Mounting: SMD
Case: TQFP128
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3BR0665JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.42 EUR |
| 29+ | 3.03 EUR |
| 33+ | 2.64 EUR |
| ICE3BR1765JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.76 EUR |
| 35+ | 2.5 EUR |
| 39+ | 2.21 EUR |
| ICE3A2065ELJFKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Operating voltage: 10.5...26V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 650V
Input voltage: 80...265V
Output current: 10.3A
Operating temperature: -25...130°C
Duty cycle factor: 0...75%
Application: SMPS
Power: 57/28W
Case: DIP8
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Operating voltage: 10.5...26V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 650V
Input voltage: 80...265V
Output current: 10.3A
Operating temperature: -25...130°C
Duty cycle factor: 0...75%
Application: SMPS
Power: 57/28W
Case: DIP8
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.98 EUR |
| 34+ | 2.55 EUR |
| 37+ | 2.34 EUR |
| 39+ | 2.19 EUR |
| 40+ | 2.14 EUR |
| 41+ | 2.11 EUR |
| 50+ | 2.07 EUR |
| ICE3AR0680JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Operating voltage: 10.5...25V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 20A
Operating temperature: -25...130°C
Duty cycle factor: 0...75%
Application: SMPS
Power: 82/52W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Operating voltage: 10.5...25V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 20A
Operating temperature: -25...130°C
Duty cycle factor: 0...75%
Application: SMPS
Power: 82/52W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.2 EUR |
| ICE3RBR0665JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3RBR1765JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3PCS02GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE3RBR4765JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3B1565JFKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1300+ | 2.06 EUR |
| ICE3RBR4765JGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.65 EUR |
| GS66502BMRXUSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GS0650306LLMRXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGOT60R070D1AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25L16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2125PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.71 EUR |
| 21+ | 4.24 EUR |
| 24+ | 3.56 EUR |
| 26+ | 3.28 EUR |
| 50+ | 3.13 EUR |
| 100+ | 3 EUR |
| IR2121PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Power: 1W
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Power: 1W
Turn-off time: 105ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.63 EUR |
| 27+ | 3.17 EUR |
| 28+ | 3.06 EUR |
| IR2125SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.28 EUR |
| 28+ | 3.15 EUR |
| 45+ | 3.01 EUR |
| 90+ | 2.88 EUR |
| 270+ | 2.76 EUR |
| IR2128STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB160N04S4H1ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB160N04S4LH1ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.24 EUR |
| 36+ | 2.37 EUR |
| 47+ | 1.82 EUR |
| BTS4141N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 28+ | 3.12 EUR |
| 100+ | 2.45 EUR |
| 250+ | 2.19 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.93 EUR |
| BTS4880R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.78 EUR |
| 10+ | 13.3 EUR |
| 100+ | 10.94 EUR |
| 500+ | 10.52 EUR |
| BTS452T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS4175SGA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS436L2GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD06N80C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR1205TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Power dissipation: 107W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Power dissipation: 107W
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 109+ | 0.79 EUR |
| 140+ | 0.61 EUR |
| 500+ | 0.56 EUR |
| BGS14MPA9E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Interface: MIPI
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Interface: MIPI
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SP4T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS21867STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -4...4A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -4...4A
auf Bestellung 1298 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.46 EUR |






























