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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES TT215N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TLE8366EVXUMA1 INFINEON TECHNOLOGIES Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2239 Stücke:
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46+1.87 EUR
59+1.46 EUR
67+1.27 EUR
74+1.15 EUR
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IPD90N04S4L04ATMA1 IPD90N04S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1328 Stücke:
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103+0.83 EUR
106+0.8 EUR
112+0.76 EUR
116+0.74 EUR
500+0.7 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5mΩ
auf Bestellung 1173 Stücke:
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47+1.83 EUR
96+0.89 EUR
127+0.68 EUR
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IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES IRS44273LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 2990 Stücke:
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100+0.86 EUR
115+0.75 EUR
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IPF016N10NF2SATMA1 IPF016N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 INFINEON TECHNOLOGIES infineon-imz120r030m1h-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247-4
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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3+32.05 EUR
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Power: 1.6W
Turn-off time: 475ns
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9+9.96 EUR
11+7.87 EUR
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IR2132JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Integrated circuit features: MOSFET
Type of integrated circuit: driver
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES irfb31n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES irfp4332pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES IRFU4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.81 EUR
46+1.89 EUR
50+1.74 EUR
60+1.43 EUR
75+1.36 EUR
150+1.23 EUR
450+1.18 EUR
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IR21834STRPBF IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IR2183STRPBF INFINEON TECHNOLOGIES infineon-ir2183-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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AUIRG4PH50SXKMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
25+12.58 EUR
50+11.32 EUR
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.81 EUR
14+6.2 EUR
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
11+8.04 EUR
13+6.81 EUR
15+5.75 EUR
30+5.18 EUR
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
11+8.07 EUR
12+7.29 EUR
30+6.6 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
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IKW40N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES IKY40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES IKY40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES FP40R12KT3BOSA1.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES BTS740S2.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
On-state resistance: 15mΩ
Mounting: SMD
Supply voltage: 5...34V DC
Output current: 5.5...8.5A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20-W
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)
8+11.36 EUR
11+8.14 EUR
100+6.72 EUR
250+6.22 EUR
Mindestbestellmenge: 8 Stücke
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IPD70N03S4L04ATMA1 IPD70N03S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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FM24C16B-G FM24C16B-G INFINEON TECHNOLOGIES Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2910 Stücke
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FM24C16B-GTR FM24C16B-GTR INFINEON TECHNOLOGIES Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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CY7C1312KV18-250BZXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BTS640S2G BTS640S2G INFINEON TECHNOLOGIES BTS640S2G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.58 EUR
14+6.32 EUR
100+5.11 EUR
Mindestbestellmenge: 10 Stücke
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IRF2804PBF IRF2804PBF INFINEON TECHNOLOGIES irf2804pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2.3mΩ
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.87 EUR
35+2.45 EUR
50+2.05 EUR
100+1.89 EUR
250+1.69 EUR
500+1.57 EUR
Mindestbestellmenge: 23 Stücke
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IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES irfts9342pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.79 EUR
166+0.51 EUR
225+0.38 EUR
253+0.33 EUR
296+0.29 EUR
500+0.25 EUR
1000+0.21 EUR
1300+0.2 EUR
2500+0.18 EUR
Mindestbestellmenge: 109 Stücke
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES irlts2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: -6.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.82 EUR
157+0.55 EUR
248+0.35 EUR
500+0.25 EUR
1000+0.21 EUR
Mindestbestellmenge: 103 Stücke
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES irlts6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
182+0.46 EUR
216+0.39 EUR
247+0.35 EUR
277+0.31 EUR
500+0.24 EUR
Mindestbestellmenge: 136 Stücke
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IRF5801TRPBF IRF5801TRPBF INFINEON TECHNOLOGIES irf5801pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
auf Bestellung 1194 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.88 EUR
117+0.73 EUR
136+0.63 EUR
199+0.43 EUR
234+0.37 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 97 Stücke
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IRF5802TRPBF IRF5802TRPBF INFINEON TECHNOLOGIES irf5802pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.9A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.76 EUR
153+0.56 EUR
252+0.33 EUR
302+0.29 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 112 Stücke
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES IPD034N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.98 EUR
36+2.37 EUR
41+2.09 EUR
55+1.57 EUR
100+1.55 EUR
Mindestbestellmenge: 29 Stücke
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES IPB014N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.89 EUR
16+5.58 EUR
20+4.38 EUR
23+3.83 EUR
Mindestbestellmenge: 15 Stücke
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IPP014N06NF2SAKMA2 IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
15+6.06 EUR
19+4.71 EUR
23+3.77 EUR
25+3.47 EUR
Mindestbestellmenge: 15 Stücke
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BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES BSC014N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 156W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPB054N06N3GATMA1 IPB054N06N3GATMA1 INFINEON TECHNOLOGIES IPB054N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 BSC034N06NSATMA1 INFINEON TECHNOLOGIES BSC034N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPB034N06N3GATMA2 INFINEON TECHNOLOGIES Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES bar66series.pdf Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
658+0.13 EUR
Mindestbestellmenge: 455 Stücke
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BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES BAR64-04.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
556+0.15 EUR
603+0.14 EUR
669+0.13 EUR
783+0.11 EUR
882+0.096 EUR
966+0.088 EUR
Mindestbestellmenge: 455 Stücke
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 805 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.3 EUR
485+0.18 EUR
530+0.17 EUR
605+0.14 EUR
Mindestbestellmenge: 290 Stücke
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BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.71 EUR
Mindestbestellmenge: 120 Stücke
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BAR6502VH6327XTSA1 INFINEON TECHNOLOGIES bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Leakage current: 20nA
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TT215N22KOF TT215N22KOF.pdf
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2239 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.87 EUR
59+1.46 EUR
67+1.27 EUR
74+1.15 EUR
Mindestbestellmenge: 46 Stücke
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IPD90N04S4L04ATMA1 Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t
IPD90N04S4L04ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
103+0.83 EUR
106+0.8 EUR
112+0.76 EUR
116+0.74 EUR
500+0.7 EUR
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IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5mΩ
auf Bestellung 1173 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.83 EUR
96+0.89 EUR
127+0.68 EUR
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
IPP050N03LF2SAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRS44273LTRPBF IRS44273LTRPBF.pdf
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
115+0.75 EUR
Mindestbestellmenge: 100 Stücke
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
IPF016N10NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 infineon-imz120r030m1h-datasheet-en.pdf
IMZ120R030M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247-4
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+32.05 EUR
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IR2132SPBF description IR2132JPBF.pdf
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Power: 1.6W
Turn-off time: 475ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.96 EUR
11+7.87 EUR
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IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Integrated circuit features: MOSFET
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFS31N20DTRLP irfb31n20dpbf.pdf
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4332PBF description irfp4332pbf.pdf
IRFP4332PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU4510PBF IRFU4510PBF.pdf
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
31+2.81 EUR
46+1.89 EUR
50+1.74 EUR
60+1.43 EUR
75+1.36 EUR
150+1.23 EUR
450+1.18 EUR
Mindestbestellmenge: 31 Stücke
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IR2183STRPBF infineon-ir2183-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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AUIRG4PH50SXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+12.58 EUR
50+11.32 EUR
Mindestbestellmenge: 25 Stücke
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IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.81 EUR
14+6.2 EUR
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IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.04 EUR
13+6.81 EUR
15+5.75 EUR
30+5.18 EUR
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IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.07 EUR
12+7.29 EUR
30+6.6 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Produkt ist nicht verfügbar
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IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IKY40N120CH3XKSA1 IKY40N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 IKY40N120CS6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 FP40R12KT3BOSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS740S2 description BTS740S2.pdf
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
On-state resistance: 15mΩ
Mounting: SMD
Supply voltage: 5...34V DC
Output current: 5.5...8.5A
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO20-W
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.36 EUR
11+8.14 EUR
100+6.72 EUR
250+6.22 EUR
Mindestbestellmenge: 8 Stücke
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IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
IPD70N03S4L04ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FM24C16B-G Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24C16B-GTR Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BAS7007E6327 BAS7004E6327HTSA1.pdf
BAS7007E6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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CY7C1312KV18-250BZXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BTS640S2G BTS640S2G.pdf
BTS640S2G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
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10+8.58 EUR
14+6.32 EUR
100+5.11 EUR
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IRF2804PBF irf2804pbf.pdf
IRF2804PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2.3mΩ
auf Bestellung 680 Stücke:
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23+3.87 EUR
35+2.45 EUR
50+2.05 EUR
100+1.89 EUR
250+1.69 EUR
500+1.57 EUR
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IRFTS9342TRPBF irfts9342pbf.pdf
IRFTS9342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
auf Bestellung 2718 Stücke:
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109+0.79 EUR
166+0.51 EUR
225+0.38 EUR
253+0.33 EUR
296+0.29 EUR
500+0.25 EUR
1000+0.21 EUR
1300+0.2 EUR
2500+0.18 EUR
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IRLTS2242TRPBF irlts2242pbf.pdf
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: -6.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
103+0.82 EUR
157+0.55 EUR
248+0.35 EUR
500+0.25 EUR
1000+0.21 EUR
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IRLTS6342TRPBF irlts6342pbf.pdf
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 8.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
182+0.46 EUR
216+0.39 EUR
247+0.35 EUR
277+0.31 EUR
500+0.24 EUR
Mindestbestellmenge: 136 Stücke
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IRF5801TRPBF irf5801pbf.pdf
IRF5801TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
auf Bestellung 1194 Stücke:
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AnzahlPrivatkunde
97+0.88 EUR
117+0.73 EUR
136+0.63 EUR
199+0.43 EUR
234+0.37 EUR
500+0.26 EUR
1000+0.25 EUR
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IRF5802TRPBF irf5802pbf.pdf
IRF5802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.9A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
112+0.76 EUR
153+0.56 EUR
252+0.33 EUR
302+0.29 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 112 Stücke
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IPD034N06N3GATMA1 IPD034N06N3G-DTE.pdf
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+2.98 EUR
36+2.37 EUR
41+2.09 EUR
55+1.57 EUR
100+1.55 EUR
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IPB014N06NATMA1 IPB014N06N-DTE.pdf
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.89 EUR
16+5.58 EUR
20+4.38 EUR
23+3.83 EUR
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
IPP014N06NF2SAKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
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15+6.06 EUR
19+4.71 EUR
23+3.77 EUR
25+3.47 EUR
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BSC014N06NSATMA1 BSC014N06NS-DTE.pdf
BSC014N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 156W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPB054N06N3GATMA1 IPB054N06N3G-DTE.pdf
IPB054N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 BSC034N06NS-DTE.pdf
BSC034N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPB034N06N3GATMA2 Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BAR66E6327HTSA1 bar66series.pdf
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAR6303WE6327HTSA1 BAR63xx_ser.pdf
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
658+0.13 EUR
Mindestbestellmenge: 455 Stücke
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BAR6404E6327HTSA1 BAR64-04.pdf
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
556+0.15 EUR
603+0.14 EUR
669+0.13 EUR
783+0.11 EUR
882+0.096 EUR
966+0.088 EUR
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 805 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
290+0.3 EUR
485+0.18 EUR
530+0.17 EUR
605+0.14 EUR
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BAR6302VH6327XTSA1 BAR63xx_ser.pdf
BAR6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
Mindestbestellmenge: 120 Stücke
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Leakage current: 20nA
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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