Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128402) > Seite 2062 nach 2141
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IGB15N65S5ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 52.5W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 23A Collector-emitter voltage: 650V Gate charge: 38nC Pulsed collector current: 60A Turn-on time: 26ns Turn-off time: 147ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IKB15N65EH5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 52.5W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 18A Collector-emitter voltage: 650V Gate charge: 38nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Turn-on time: 33ns Turn-off time: 172ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SPW20N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP20N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.7A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS169H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: depletion |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC850CWH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Frequency: 250MHz |
auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2113SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2113STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 816 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5305PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 422 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5305STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1677 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF530NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: THT Gate charge: 24.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3412 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF530NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CY8CKIT-042 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; evaluation board; Arduino Type of development kit: Cypress Connection: USB B mini Kind of module: evaluation board Application - series/manufacturer: Arduino |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ICE2QS03G | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 39...65kHz Number of channels: 1 Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 500V Duty cycle factor: 0...50% Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1010EPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 81A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.6nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1010EZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP452 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V |
auf Bestellung 532 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2153DPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -260...180mA Power: 1W Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2153DSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKP10N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 110W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 62nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGP30N60H3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3 Type of transistor: IGBT Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 30A Manufacturer series: H3 Collector-emitter voltage: 600V Power dissipation: 187W Technology: TRENCHSTOP™ 5 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1404PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1404STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1404STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 584 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 422 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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AUIRF1404STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRF1404ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF520NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 47.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 4728 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 42A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 21A Power dissipation: 63W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 60A Turn-on time: 26ns Turn-off time: 169ns |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5 Type of transistor: IGBT Power dissipation: 125W Case: TO220-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Gate-emitter voltage: ±20V Collector current: 20A Manufacturer series: H5 Collector-emitter voltage: 650V Gate charge: 48nC |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP20N60CFD | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SPP20N60S5 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP20N65C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Power dissipation: 208W Case: PG-TO220-3 Mounting: THT Kind of package: tube Drain current: 13.1A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±20V On-state resistance: 0.19Ω Polarisation: unipolar |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3205PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 146nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3205STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1231 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3205STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF3205ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3205ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 440A |
auf Bestellung 737 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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AUIRF3205Z | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 170W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 76nC On-state resistance: 6.5mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPW47N65C3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of channel: enhancement Power dissipation: 415W Technology: CoolMOS™ Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAV70E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Power dissipation: 0.25W |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF4905LPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: TO262 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhancement |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF4905PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3165 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF4905STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 4817 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF4905STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -44A Pulsed drain current: -280A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IGW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 Technology: TRENCHSTOP™ 3 |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW25N120T2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 349W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF9530NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3354 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 153W Case: TO247-3 Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 218ns Gate-emitter voltage: ±20V Gate charge: 223nC |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS138NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSS138NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A Type of transistor: N-MOSFET Technology: SIPMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.18A Pulsed drain current: 0.92A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IGW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 306W Case: TO247-3 Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ 3 Gate-emitter voltage: ±20V Manufacturer series: H3 |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKFW40N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 81W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 52ns Turn-off time: 160ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IGP15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 23A Collector-emitter voltage: 600V Power dissipation: 130W |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IGB15N65S5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 23A
Collector-emitter voltage: 650V
Gate charge: 38nC
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 23A
Collector-emitter voltage: 650V
Gate charge: 38nC
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKB15N65EH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 18A
Collector-emitter voltage: 650V
Gate charge: 38nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 18A
Collector-emitter voltage: 650V
Gate charge: 38nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Turn-on time: 33ns
Turn-off time: 172ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPW20N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 401 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP20N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS169H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| BC850CWH6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2755 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2113SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2113STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5305PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5305STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1677 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF530NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3412 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF530NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8CKIT-042 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Arduino
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Application - series/manufacturer: Arduino
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Arduino
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Application - series/manufacturer: Arduino
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE2QS03G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 1792 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1010EPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1010EZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP452 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 532 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4110PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2153DPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2153DSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP10N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| IGP30N60H3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 187W
Technology: TRENCHSTOP™ 5
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
Manufacturer series: H3
Collector-emitter voltage: 600V
Power dissipation: 187W
Technology: TRENCHSTOP™ 5
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1404LPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1404PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1404STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1404STRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF1404ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1404ZSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)
| AUIRF1404STRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF1404ZSTRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF520NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 765 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF540NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 47.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4728 Stücke:
Lieferzeit 14-21 Tag (e)
| IGP20N65F5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 42A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
| IGP20N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 21A
Power dissipation: 63W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP20N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Gate-emitter voltage: ±20V
Collector current: 20A
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate charge: 48nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Gate-emitter voltage: ±20V
Collector current: 20A
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate charge: 48nC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP20N60CFD |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPP20N60S5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP20N65C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Power dissipation: 208W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Power dissipation: 208W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain current: 13.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Polarisation: unipolar
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3205PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3205STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1231 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3205STRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRF3205ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRF3205ZSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 440A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 440A
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)
| AUIRF3205Z |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 76nC
On-state resistance: 6.5mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 76nC
On-state resistance: 6.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| 2N7002DWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| SPW47N65C3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of channel: enhancement
Power dissipation: 415W
Technology: CoolMOS™
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of channel: enhancement
Power dissipation: 415W
Technology: CoolMOS™
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAV70E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF4905LPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF4905PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3165 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF4905STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4817 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF4905STRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IGW25N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW25N120T2FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF9530NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3354 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW40N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Gate-emitter voltage: ±20V
Gate charge: 223nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Gate-emitter voltage: ±20V
Gate charge: 223nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS138NH6327XTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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Stück im Wert von UAH
| BSS138NH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| IGW40N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Manufacturer series: H3
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
| IKFW40N60DH3EXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 81W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 81W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| IGP15N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)