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AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES auirf2804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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FM25V10-GTR FM25V10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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BSS131H6327 BSS131H6327 INFINEON TECHNOLOGIES BSS131.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES BSS131H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL7486MTRPBF INFINEON TECHNOLOGIES Infineon-IRL7486M-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fec7a83a0629 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES irf6727mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 89W
Drain current: 180A
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES irf6648pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF7647S2TR AUIRF7647S2TR INFINEON TECHNOLOGIES auirf7647s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Power dissipation: 41W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 24A
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AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES auirf7736m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES auirf7739l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES irf6775mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7739L1TRPBF IRF7739L1TRPBF INFINEON TECHNOLOGIES IRF7739L1TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
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IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES irf7739l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF6645TRPBF IRF6645TRPBF INFINEON TECHNOLOGIES irf6645pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPB80N06S405ATMA2 INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-7-3
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Power dissipation: 250W
Technology: OptiMOS® -T2
Drain current: 180A
Gate-source voltage: ±20V
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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES 2EDN752x-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 20V
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -5...5A
Protection: undervoltage UVP
Technology: EiceDRIVER™
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84+1.02 EUR
93+0.92 EUR
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2EDN8524FXTMA1 2EDN8524FXTMA1 INFINEON TECHNOLOGIES Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 20V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
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115+0.74 EUR
124+0.69 EUR
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CYUSB3KIT-003CYUSB3KIT-003
CYUSB3KIT-003CYUSB3KIT-003
 CYUSB3KIT-003 INFINEON TECHNOLOGIES Infineon-SuperSpeed_Explorer_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef82cf70d57&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; expansion board
Type of development kit: Cypress
Connection: USB 2.0; USB 3.0
Kind of module: expansion board
Produkt ist nicht verfügbar
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CY62128ELL-45SXI CY62128ELL-45SXI INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: SO32
Mounting: SMD
IC width: 450mils
Kind of interface: parallel
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25+3.47 EUR
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CY62128ELL-45ZXI CY62128ELL-45ZXI INFINEON TECHNOLOGIES CY62128ELL-45ZXI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
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39+2.19 EUR
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
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9+9.46 EUR
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BA885E6327 BA885E6327 INFINEON TECHNOLOGIES BAx95-DTE.pdf Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
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BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 35V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Case: SC79
Capacitance: 0.6...1.4pF
Type of diode: switching
Reverse recovery time: 120ns
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172+0.49 EUR
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 INFINEON TECHNOLOGIES IAUT300N08S5N012.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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15+5.97 EUR
17+5.15 EUR
100+4.56 EUR
500+4.08 EUR
1000+3.81 EUR
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CY62128ELL-45SX CY62128ELL-45SX INFINEON TECHNOLOGIES CY62128E.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
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19+4.47 EUR
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CY62128EV30LL-45ZAXI CY62128EV30LL-45ZAXI INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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24+3.65 EUR
31+2.81 EUR
35+2.49 EUR
50+2.3 EUR
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CY62128EV30LL-45SXI CY62128EV30LL-45SXI INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
IC width: 450mils
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CY62128EV30LL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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BSC007N04LS6ATMA1 BSC007N04LS6ATMA1 INFINEON TECHNOLOGIES BSC007N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
On-state resistance: 0.7mΩ
Mounting: SMD
Power dissipation: 138W
Gate charge: 94nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Kind of package: reel; tape
Case: PG-TDSON-8 FL
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 INFINEON TECHNOLOGIES BSC010N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Kind of package: reel; tape
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES BSC022N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ 6
Kind of package: reel; tape
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IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N044ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC80N04S6L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 66A
Gate charge: 25nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±16V
Power dissipation: 50W
Pulsed drain current: 320A
Technology: OptiMOS™ 6
Case: PG-TDSON-8
Kind of channel: enhancement
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IAUC60N04S6L030HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC100N04S6L025ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
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BSP75N BSP75N INFINEON TECHNOLOGIES BSP75N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Power dissipation: 1.8W
Technology: HITFET®
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ084N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3GATMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES BSZ088N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES BSZ088N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 260W
Gate charge: 81nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 15mΩ
auf Bestellung 165 Stücke:
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28+3.05 EUR
50+1.74 EUR
51+1.69 EUR
55+1.57 EUR
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IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 35mΩ
Mounting: SMD
Output current: 3A
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: SOT223-3
Kind of integrated circuit: low-side
Number of channels: 1
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35+2.5 EUR
38+2.26 EUR
100+1.93 EUR
250+1.7 EUR
500+1.57 EUR
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BSP772T BSP772T INFINEON TECHNOLOGIES BSP772T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
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84+1.02 EUR
99+0.86 EUR
110+0.77 EUR
135+0.63 EUR
144+0.6 EUR
500+0.58 EUR
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ110N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
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BC857AE6327 BC857AE6327 INFINEON TECHNOLOGIES BC857B-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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328+0.25 EUR
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IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES irl1404xxPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 703 Stücke:
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28+3.06 EUR
36+2.4 EUR
40+2.13 EUR
53+1.62 EUR
100+1.45 EUR
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IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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SPW35N60CFDFKSA1 INFINEON TECHNOLOGIES SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
Reverse recovery time: 180ns
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30+11.66 EUR
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IPP020N03LF2SAKSA1 IPP020N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125A; 136W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 136W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Drain current: 125A
Drain-source voltage: 30V
On-state resistance: 2.05mΩ
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44+1.98 EUR
66+1.3 EUR
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PVDZ172NPBF PVDZ172NPBF INFINEON TECHNOLOGIES pvdz172.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Case: DIP8
Mounting: THT
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: 0...60V DC
Release time: 0.5ms
Max. operating current: 1.5A
On-state resistance: 0.25Ω
Type of relay: solid state
auf Bestellung 27 Stücke:
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7+13.61 EUR
10+12.58 EUR
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AUIRF2804STRL auirf2804.pdf
AUIRF2804STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25V10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25V10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BSS131H6327 BSS131.pdf
BSS131H6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS131H6327XTSA1 BSS131H6327XTSA1.pdf
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL7486MTRPBF Infineon-IRL7486M-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fec7a83a0629
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6727MTRPBF irf6727mpbf.pdf
IRF6727MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 89W
Drain current: 180A
Produkt ist nicht verfügbar
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IRF6648TRPBF irf6648pbf.pdf
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF7647S2TR auirf7647s2.pdf
AUIRF7647S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Power dissipation: 41W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 24A
Produkt ist nicht verfügbar
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AUIRF7736M2TR auirf7736m2.pdf
AUIRF7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF7739L2TR auirf7739l2.pdf
AUIRF7739L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF6775MTRPBF irf6775mpbf.pdf
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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IRF7739L1TRPBF IRF7739L1TRPBF.pdf
IRF7739L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF7739L2TRPBF irf7739l2pbf.pdf
IRF7739L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF6645TRPBF irf6645pbf.pdf
IRF6645TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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IPB80N06S405ATMA2 Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-7-3
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 720A
Power dissipation: 250W
Technology: OptiMOS® -T2
Drain current: 180A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2EDN7524FXTMA1 2EDN752x-DTE.pdf
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 20V
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -5...5A
Protection: undervoltage UVP
Technology: EiceDRIVER™
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
93+0.92 EUR
Mindestbestellmenge: 84 Stücke
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2EDN8524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 20V
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
115+0.74 EUR
124+0.69 EUR
Mindestbestellmenge: 84 Stücke
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CYUSB3KIT-003 Infineon-SuperSpeed_Explorer_Kit_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef82cf70d57&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3KIT-003CYUSB3KIT-003
CYUSB3KIT-003CYUSB3KIT-003
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; expansion board
Type of development kit: Cypress
Connection: USB 2.0; USB 3.0
Kind of module: expansion board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62128ELL-45SXI Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-45SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: SO32
Mounting: SMD
IC width: 450mils
Kind of interface: parallel
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.47 EUR
Mindestbestellmenge: 25 Stücke
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CY62128ELL-45ZXI CY62128ELL-45ZXI.pdf
CY62128ELL-45ZXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
39+2.19 EUR
Mindestbestellmenge: 39 Stücke
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BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.46 EUR
Mindestbestellmenge: 9 Stücke
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BA885E6327 BAx95-DTE.pdf
BA885E6327
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1047+0.082 EUR
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BA89202VH6127XTSA1 BAx92-DTE.pdf
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 35V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Case: SC79
Capacitance: 0.6...1.4pF
Type of diode: switching
Reverse recovery time: 120ns
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
172+0.49 EUR
Mindestbestellmenge: 172 Stücke
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012.pdf
IAUT300N08S5N012ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.97 EUR
17+5.15 EUR
100+4.56 EUR
500+4.08 EUR
1000+3.81 EUR
Mindestbestellmenge: 15 Stücke
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CY62128ELL-45SX CY62128E.pdf
CY62128ELL-45SX
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.47 EUR
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CY62128EV30LL-45ZAXI Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45ZAXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.65 EUR
31+2.81 EUR
35+2.49 EUR
50+2.3 EUR
Mindestbestellmenge: 24 Stücke
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CY62128EV30LL-45SXI Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
IC width: 450mils
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSC007N04LS6ATMA1 BSC007N04LS6ATMA1.pdf
BSC007N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
On-state resistance: 0.7mΩ
Mounting: SMD
Power dissipation: 138W
Gate charge: 94nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Kind of package: reel; tape
Case: PG-TDSON-8 FL
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1.pdf
BSC010N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC022N04LS6ATMA1 BSC022N04LS6ATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ 6
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
IAUC60N04S6L039ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC80N04S6L032ATMA1 Infineon-IAUC80N04S6L032-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3b4621216
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 40V
Drain current: 66A
Gate charge: 25nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±16V
Power dissipation: 50W
Pulsed drain current: 320A
Technology: OptiMOS™ 6
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSP75N BSP75N.pdf
BSP75N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Power dissipation: 1.8W
Technology: HITFET®
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA-DTE.pdf
BSZ086P03NS3EGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ084N08NS5ATMA1 BSZ084N08NS5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1-dte.pdf
BSZ086P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ088N03LSGATMA1 BSZ088N03LSG-DTE.pdf
BSZ088N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSG-DTE.pdf
BSZ088N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF8010PBF description irf8010.pdf
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 260W
Gate charge: 81nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 15mΩ
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.05 EUR
50+1.74 EUR
51+1.69 EUR
55+1.57 EUR
100+1.5 EUR
Mindestbestellmenge: 28 Stücke
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IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP78 BSP78.pdf
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
On-state resistance: 35mΩ
Mounting: SMD
Output current: 3A
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: SOT223-3
Kind of integrated circuit: low-side
Number of channels: 1
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.83 EUR
35+2.5 EUR
38+2.26 EUR
100+1.93 EUR
250+1.7 EUR
500+1.57 EUR
Mindestbestellmenge: 23 Stücke
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BSP772T BSP772T.pdf
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1237 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+5 EUR
25+3.42 EUR
100+2.7 EUR
250+2.43 EUR
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IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1274 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
99+0.86 EUR
110+0.77 EUR
135+0.63 EUR
144+0.6 EUR
500+0.58 EUR
Mindestbestellmenge: 84 Stücke
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BSZ110N08NS5ATMA1 BSZ110N08NS5-DTE.pdf
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BC857AE6327 BC857B-DTE.pdf
BC857AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
328+0.25 EUR
Mindestbestellmenge: 328 Stücke
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IRL1404ZSTRLPBF irl1404xxPBF.pdf
IRL1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.06 EUR
36+2.4 EUR
40+2.13 EUR
53+1.62 EUR
100+1.45 EUR
500+1.26 EUR
Mindestbestellmenge: 28 Stücke
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IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
Reverse recovery time: 180ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+11.66 EUR
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IPP020N03LF2SAKSA1 Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d
IPP020N03LF2SAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125A; 136W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 136W
Case: TO220-3
Mounting: THT
Gate charge: 69nC
Drain current: 125A
Drain-source voltage: 30V
On-state resistance: 2.05mΩ
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
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44+1.98 EUR
66+1.3 EUR
85+1 EUR
Mindestbestellmenge: 44 Stücke
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PVDZ172NPBF description pvdz172.pdf
PVDZ172NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Case: DIP8
Mounting: THT
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: 0...60V DC
Release time: 0.5ms
Max. operating current: 1.5A
On-state resistance: 0.25Ω
Type of relay: solid state
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.61 EUR
10+12.58 EUR
25+12.03 EUR
Mindestbestellmenge: 7 Stücke
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