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IPD26N06S2L35ATMA2 IPD26N06S2L35ATMA2 INFINEON TECHNOLOGIES IPD26N06S2L35.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
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IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXI CY8CMBR3116-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
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SLB9670VQ20FW785XTMA1 INFINEON TECHNOLOGIES Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
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5000+3.47 EUR
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PVA3354NSPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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50+10.2 EUR
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S80KS2564GACHV040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2562GABHI020 INFINEON TECHNOLOGIES Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2562GABHB023 INFINEON TECHNOLOGIES Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2563GABHI020 INFINEON TECHNOLOGIES download Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2564GACHI040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
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S80KS2564GACHI043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2564GACHV043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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ITS4880R ITS4880R INFINEON TECHNOLOGIES ITS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 8
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BSC059N04LSGATMA1 BSC059N04LSGATMA1 INFINEON TECHNOLOGIES BSC059N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BTS3405G BTS3405G INFINEON TECHNOLOGIES BTS3405G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
Mounting: SMD
auf Bestellung 2075 Stücke:
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27+3.21 EUR
42+2.06 EUR
47+1.83 EUR
100+1.63 EUR
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CY8C4013SXI-400 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
auf Bestellung 2716 Stücke:
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97+2.01 EUR
388+1.81 EUR
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Bandwidth: 0.1...6GHz
Supply voltage: 1.8...3.5V DC
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SPDT
Case: TSNP6
Number of channels: 2
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IRFR4615TRLPBF IRFR4615TRLPBF INFINEON TECHNOLOGIES irfr4615pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD750S65K3NOSA1 INFINEON TECHNOLOGIES Infineon-DD750S65K3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea03876d5624 Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES BSO110N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2483 Stücke:
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88+0.98 EUR
120+0.71 EUR
151+0.56 EUR
500+0.48 EUR
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CY7C53150-20AXI INFINEON TECHNOLOGIES Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
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TZ240N36KOF TZ240N36KOF INFINEON TECHNOLOGIES TZ240N36KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BCR148SH6327 BCR148SH6327 INFINEON TECHNOLOGIES BCR148.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
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405+0.21 EUR
550+0.15 EUR
620+0.14 EUR
695+0.12 EUR
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES BSP317PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
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57+1.5 EUR
91+0.94 EUR
138+0.62 EUR
500+0.48 EUR
1000+0.44 EUR
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IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES irf7351pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1944 Stücke:
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36+2.37 EUR
54+1.58 EUR
60+1.43 EUR
75+1.15 EUR
100+1.05 EUR
250+0.93 EUR
500+0.84 EUR
1000+0.77 EUR
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TT142N14KOF TT142N14KOF INFINEON TECHNOLOGIES TT142N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES BTS50080-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
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BSS315PH6327XTSA1 BSS315PH6327XTSA1 INFINEON TECHNOLOGIES BSS315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ P2
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT23
On-state resistance: 0.15Ω
Power dissipation: 0.5W
auf Bestellung 3379 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
196+0.44 EUR
223+0.38 EUR
379+0.23 EUR
468+0.18 EUR
544+0.15 EUR
1000+0.14 EUR
3000+0.11 EUR
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BSS126IXTSA1 BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
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IPB012N04NF2SATMA1 IPB012N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB012N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12ad796af4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
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TLD21413EPXUMA1 TLD21413EPXUMA1 INFINEON TECHNOLOGIES TLD21413EP.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764GVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 695 Stücke:
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35+2.43 EUR
48+1.81 EUR
50+1.7 EUR
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TLE42764GV50ATMA1 TLE42764GV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.12 EUR
37+2.31 EUR
40+2.14 EUR
50+2.05 EUR
100+1.93 EUR
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TLE42744GSV33HTMA1 INFINEON TECHNOLOGIES TLE42744.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...40V
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TLE42744DV50ATMA1 TLE42744DV50ATMA1 INFINEON TECHNOLOGIES TLE42744.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
Produkt ist nicht verfügbar
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TLE42764DVATMA1 TLE42764DVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE42764DV50ATMA1 TLE42764DV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IMCQ120R034M2HXTMA1 INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: IMCQ120R034M2HXTMA1
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
750+10.45 EUR
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IPB090N06N3GATMA1 IPB090N06N3GATMA1 INFINEON TECHNOLOGIES IPB090N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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ESD230B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1ICE5AR4780BZSXKLA1
ICE5AR4780BZSXKLA1ICE5AR4780BZSXKLA1
 ICE5AR4780BZSXKLA1 INFINEON TECHNOLOGIES ICE5ARxxxxBZS.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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ICE5AR4770BZSXKLA1ICE5AR4770BZSXKLA1
ICE5AR4770BZSXKLA1ICE5AR4770BZSXKLA1
 ICE5AR4770BZSXKLA1 INFINEON TECHNOLOGIES ICE5ARxxxxBZS.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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IRFS4115TRLPBF IRFS4115TRLPBF INFINEON TECHNOLOGIES irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES BCW60.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
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BSP372NH6327XTSA1 BSP372NH6327XTSA1 INFINEON TECHNOLOGIES BSP372NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.31 EUR
101+0.84 EUR
149+0.57 EUR
200+0.51 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 65 Stücke
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XMC4800F100F1024AAXQMA1 XMC4800F100F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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S26KS256SDPBHB023 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S26KS256SDPBHI020 INFINEON TECHNOLOGIES CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
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S26KS256SDPBHM020 INFINEON TECHNOLOGIES infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1690 Stücke
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S26KS256SDPBHV020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1690 Stücke
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 INFINEON TECHNOLOGIES ITS4200SMEOHUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 0.7A
Produkt ist nicht verfügbar
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ITS4200SMENHUMA1 INFINEON TECHNOLOGIES ITS4200SMEN.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.16Ω
Supply voltage: 5...34V DC
Output current: 0.7A
Produkt ist nicht verfügbar
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IPP50R190CEXKSA1 IPP50R190CEXKSA1 INFINEON TECHNOLOGIES IPP50R190CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.39 EUR
42+2.06 EUR
47+1.82 EUR
52+1.67 EUR
100+1.54 EUR
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IRFB4620PBF IRFB4620PBF INFINEON TECHNOLOGIES irfb4620pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.4 EUR
28+3.09 EUR
33+2.58 EUR
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES IPW60R075CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 313W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 8...16.6V DC
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Voltage class: 600V
Topology: buck
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES irf2204pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.54 EUR
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IPD26N06S2L35ATMA2 IPD26N06S2L35.pdf
IPD26N06S2L35ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPB026N06NATMA1 IPB026N06N-DTE.pdf
IPB026N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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CY8CMBR3116-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3116-LQXI
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN24
Case: QFN24
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Produkt ist nicht verfügbar
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+3.47 EUR
Mindestbestellmenge: 5000 Stücke
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PVA3354NSPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: SMT
Case: SMD8
Body dimensions: 9.39x6.47x3.93mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+10.2 EUR
Mindestbestellmenge: 50 Stücke
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S80KS2564GACHV040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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S80KS2562GABHI020 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S80KS2562GABHB023 Infineon-S80KS2562_1.8_V_256-Mb_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd82db3d308ae
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS2563GABHI020 download
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S80KS2564GACHI040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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S80KS2564GACHI043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S80KS2564GACHV043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ITS4880R ITS4880R.pdf
ITS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 8; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 8
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BSC059N04LSGATMA1 BSC059N04LSG-DTE.pdf
BSC059N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC016N06NSATMA1 BSC016N06NS-DTE.pdf
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BTS3405G BTS3405G.pdf
BTS3405G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 2; N-Channel; SMD; HITFET®
Output current: 0.35A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 10V
Case: PG-DSO-8-25
Kind of integrated circuit: low-side
Number of channels: 2
On-state resistance: 0.35Ω
Mounting: SMD
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
27+3.21 EUR
42+2.06 EUR
47+1.83 EUR
100+1.63 EUR
Mindestbestellmenge: 27 Stücke
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CY8C4013SXI-400 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4013SXI-400
auf Bestellung 2716 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+2.01 EUR
388+1.81 EUR
Mindestbestellmenge: 97 Stücke
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Bandwidth: 0.1...6GHz
Supply voltage: 1.8...3.5V DC
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SPDT
Case: TSNP6
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IRFR4615TRLPBF irfr4615pbf.pdf
IRFR4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DD750S65K3NOSA1 Infineon-DD750S65K3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea03876d5624
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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BSO110N03MSGXUMA1 BSO110N03MSG-DTE.pdf
BSO110N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2483 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
88+0.98 EUR
120+0.71 EUR
151+0.56 EUR
500+0.48 EUR
Mindestbestellmenge: 88 Stücke
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CY7C53150-20AXI Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: CY7C53150-20AXI
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
70+38.2 EUR
Mindestbestellmenge: 70 Stücke
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TZ240N36KOF TZ240N36KOF.pdf
TZ240N36KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCR148SH6327 BCR148.pdf
BCR148SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
405+0.21 EUR
550+0.15 EUR
620+0.14 EUR
695+0.12 EUR
Mindestbestellmenge: 405 Stücke
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BSP317PH6327XTSA1 BSP317PH6327XTSA1-dte.pdf
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
57+1.5 EUR
91+0.94 EUR
138+0.62 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 57 Stücke
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IRF7351TRPBF irf7351pbf.pdf
IRF7351TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1944 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.37 EUR
54+1.58 EUR
60+1.43 EUR
75+1.15 EUR
100+1.05 EUR
250+0.93 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 36 Stücke
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TT142N14KOF TT142N14KOF.pdf
TT142N14KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS50080-1TMB BTS50080-1TMB.pdf
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BSS315PH6327XTSA1 BSS315PH6327XTSA1-dte.pdf
BSS315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ P2
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT23
On-state resistance: 0.15Ω
Power dissipation: 0.5W
auf Bestellung 3379 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
196+0.44 EUR
223+0.38 EUR
379+0.23 EUR
468+0.18 EUR
544+0.15 EUR
1000+0.14 EUR
3000+0.11 EUR
Mindestbestellmenge: 162 Stücke
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BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
BSS126IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPB012N04NF2SATMA1 Infineon-IPB012N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12ad796af4
IPB012N04NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 197A; 250W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.25mΩ
Drain-source voltage: 40V
Drain current: 197A
Power dissipation: 250W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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TLD21413EPXUMA1 TLD21413EP.pdf
TLD21413EPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764GVATMA1 TLE42764.pdf
TLE42764GVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.43 EUR
48+1.81 EUR
50+1.7 EUR
Mindestbestellmenge: 35 Stücke
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TLE42764GV50ATMA1 TLE42764.pdf
TLE42764GV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.12 EUR
37+2.31 EUR
40+2.14 EUR
50+2.05 EUR
100+1.93 EUR
Mindestbestellmenge: 28 Stücke
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TLE42744GSV33HTMA1 TLE42744.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.7...40V
Produkt ist nicht verfügbar
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TLE42744DV50ATMA1 TLE42744.pdf
TLE42744DV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE42764DVATMA1 TLE42764.pdf
TLE42764DVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5...20V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764DV50ATMA1 TLE42764.pdf
TLE42764DV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.5...41V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IMCQ120R034M2HXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMCQ120R034M2HXTMA1
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
750+10.45 EUR
Mindestbestellmenge: 750 Stücke
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IPB090N06N3GATMA1 IPB090N06N3G-DTE.pdf
IPB090N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 56W; 6.05V; 3A; bidirectional; SG-WLL-2-1
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.05V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SG-WLL-2-1
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1 ICE5ARxxxxBZS.pdf
ICE5AR4780BZSXKLA1ICE5AR4780BZSXKLA1
ICE5AR4780BZSXKLA1ICE5AR4780BZSXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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ICE5AR4770BZSXKLA1 ICE5ARxxxxBZS.pdf
ICE5AR4770BZSXKLA1ICE5AR4770BZSXKLA1
ICE5AR4770BZSXKLA1ICE5AR4770BZSXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.2A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.2A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 700V
Duty cycle factor: 0...80%
Power: 26.5/14.5/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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IRFS4115TRLPBF irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f
IRFS4115TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCW60BE6327 BCW60.pdf
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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BSP372NH6327XTSA1 BSP372NH6327XTSA1.pdf
BSP372NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
65+1.31 EUR
101+0.84 EUR
149+0.57 EUR
200+0.51 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 65 Stücke
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XMC4800F100F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1024AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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S26KS256SDPBHB023
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S26KS256SDPBHI020 CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
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S26KS256SDPBHM020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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S26KS256SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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IPB065N15N3GATMA1 IPB065N15N3G-DTE.pdf
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1.pdf
ITS4200SMEOHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 0.7A
Produkt ist nicht verfügbar
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ITS4200SMENHUMA1 ITS4200SMEN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.16Ω
Supply voltage: 5...34V DC
Output current: 0.7A
Produkt ist nicht verfügbar
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IPP50R190CEXKSA1 IPP50R190CE-DTE.pdf
IPP50R190CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.39 EUR
42+2.06 EUR
47+1.82 EUR
52+1.67 EUR
100+1.54 EUR
Mindestbestellmenge: 26 Stücke
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IRFB4620PBF irfb4620pbf.pdf
IRFB4620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.4 EUR
28+3.09 EUR
33+2.58 EUR
Mindestbestellmenge: 25 Stücke
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IPW60R075CPFKSA1 IPW60R075CP-DTE.pdf
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Mounting: THT
Power dissipation: 313W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IRS25411STRPBF irs25401pbf.pdf
IRS25411STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Supply voltage: 8...16.6V DC
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Voltage class: 600V
Topology: buck
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRF2204PBF description irf2204pbf.pdf
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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