Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126343) > Seite 2061 nach 2106

Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 840 1050 1260 1470 1680 1890 2056 2057 2058 2059 2060 2061 2062 2063 2064 2065 2066 2100 2106  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 14903 Stücke:
Lieferzeit 14-21 Tag (e)
481+0.18 EUR
719+0.12 EUR
903+0.094 EUR
1000+0.092 EUR
3000+0.089 EUR
Mindestbestellmenge: 481 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
On-state resistance: 20mΩ
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.07 EUR
39+2.19 EUR
50+1.7 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 1436 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
298+0.29 EUR
336+0.25 EUR
481+0.18 EUR
556+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5168 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
397+0.21 EUR
455+0.19 EUR
559+0.15 EUR
754+0.11 EUR
1023+0.083 EUR
1139+0.075 EUR
3000+0.064 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125LTI-M445 CY8C4125LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245LTI-M445 CY8C4245LTI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
 Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES AIKW75N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES ITS4200SMEP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 1.4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
490+2.14 EUR
Mindestbestellmenge: 490 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EVALPSIR2085TOBO1 INFINEON TECHNOLOGIES Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879 Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+247.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
122+0.7 EUR
147+0.58 EUR
280+0.31 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES irfr3806pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.09 EUR
66+1.29 EUR
73+1.18 EUR
89+0.96 EUR
100+0.88 EUR
Mindestbestellmenge: 41 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Pulsed drain current: 68A
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Drain current: 13.3A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO220-3
On-state resistance: 0.1Ω
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.89 EUR
31+2.76 EUR
34+2.57 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES IPB65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.05 EUR
53+1.59 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES IPD60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
On-state resistance: 702mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Drain-source voltage: 600V
Case: DPAK3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB013N06NF2SATMA1 IPB013N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Mounting: SMD
Power dissipation: 300W
Gate charge: 203nC
Polarisation: unipolar
Technology: SiC
Drain current: 198A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB013 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGMFB013 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFB013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 256Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FS512SDSNFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HL512TFPBHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HS512TGABHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29GL128S10DHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS11FHB013 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 110ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Integrated circuit features: galvanically isolated
Supply voltage: 3...3.5V; 6.5...20V
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Kind of package: reel; tape
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRG4PC40S-E INFINEON TECHNOLOGIES auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 150nC
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
400+8.62 EUR
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220NTRPBF IRFR220NTRPBF INFINEON TECHNOLOGIES irfr220npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2193 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.59 EUR
78+1.09 EUR
108+0.79 EUR
125+0.69 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 54 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL7472L1TRPbFIRL7472L1TRPbFIRL7472L1TRPbF
IRL7472L1TRPbFIRL7472L1TRPbFIRL7472L1TRPbF
 IRL7472L1TRPbF INFINEON TECHNOLOGIES Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.27 EUR
13+6.68 EUR
16+5.43 EUR
20+4.31 EUR
25+3.42 EUR
50+3.03 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF8714TRPBFXTMA1 IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
73+1.18 EUR
114+0.75 EUR
182+0.46 EUR
Mindestbestellmenge: 73 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R120P7XKSA1 IPW60R120P7XKSA1 INFINEON TECHNOLOGIES infineon-ipw60r120p7-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.82 EUR
25+3.45 EUR
30+3.2 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES IRFR4104TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.38 EUR
57+1.51 EUR
67+1.27 EUR
100+1.07 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R450P7XKSA1 IPA80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 29W
Gate charge: 24nC
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+5 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAN80R360P7XKSA1 IPAN80R360P7XKSA1 INFINEON TECHNOLOGIES IPAN80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Mounting: SMD
Case: SOT363
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 0.95A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
459+0.19 EUR
532+0.15 EUR
618+0.14 EUR
658+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DG FM24CL64B-DG INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.98 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-GTR FM24CL64B-GTR INFINEON TECHNOLOGIES FM24CL64B-GTR-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DGTR FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Pulsed collector current: 45A
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES IRF2804STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.4 EUR
29+2.94 EUR
33+2.65 EUR
50+2.31 EUR
100+2.09 EUR
200+1.93 EUR
500+1.78 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR129E6327 BCR129.pdf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR133SH6327 BCR133.pdf
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 14903 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
481+0.18 EUR
719+0.12 EUR
903+0.094 EUR
1000+0.092 EUR
3000+0.089 EUR
Mindestbestellmenge: 481 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
On-state resistance: 20mΩ
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.07 EUR
39+2.19 EUR
50+1.7 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 1436 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
298+0.29 EUR
336+0.25 EUR
481+0.18 EUR
556+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5168 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
397+0.21 EUR
455+0.19 EUR
559+0.15 EUR
754+0.11 EUR
1023+0.083 EUR
1139+0.075 EUR
3000+0.064 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125LTI-M445 CY8C4125AZI-M443.pdf
CY8C4125LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245LTI-M445 CY8C4245AZI-M443.pdf
CY8C4245LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 AIKW75N60CT.pdf
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEPHUMA1 ITS4200SMEP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 1.4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
CYPD3177-24LQXQ
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
490+2.14 EUR
Mindestbestellmenge: 490 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EVALPSIR2085TOBO1 Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+247.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
122+0.7 EUR
147+0.58 EUR
280+0.31 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3806TRPBF irfr3806pbf.pdf
IRFR3806TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.09 EUR
66+1.29 EUR
73+1.18 EUR
89+0.96 EUR
100+0.88 EUR
Mindestbestellmenge: 41 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Pulsed drain current: 68A
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Drain current: 13.3A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO220-3
On-state resistance: 0.1Ω
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.89 EUR
31+2.76 EUR
34+2.57 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
IPB65R190CFDAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 IPB65R190C7-DTE.pdf
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.05 EUR
53+1.59 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7ATMA1 IPD60R360P7.pdf
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
IPD60R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
On-state resistance: 702mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Drain-source voltage: 600V
Case: DPAK3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
IPB013N06NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Mounting: SMD
Power dissipation: 300W
Gate charge: 203nC
Polarisation: unipolar
Technology: SiC
Drain current: 198A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB013 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGMFB013 S25FL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFB013 001-98283%20Rev%20T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 256Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FS512SDSNFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HL512TFPBHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HS512TGABHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29GL128S10DHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS11FHB013 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 110ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1EDF5673FXUMA1 1EDF5673F_1EDF5663H.pdf
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Integrated circuit features: galvanically isolated
Supply voltage: 3...3.5V; 6.5...20V
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Kind of package: reel; tape
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PSH71KDPBF irg4psh71kdpbf.pdf
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRG4PC40S-E auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 150nC
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
400+8.62 EUR
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220NTRPBF irfr220npbf.pdf
IRFR220NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2193 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.59 EUR
78+1.09 EUR
108+0.79 EUR
125+0.69 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 54 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
IRL7472L1TRPbFIRL7472L1TRPbFIRL7472L1TRPbF
IRL7472L1TRPbFIRL7472L1TRPbFIRL7472L1TRPbF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.27 EUR
13+6.68 EUR
16+5.43 EUR
20+4.31 EUR
25+3.42 EUR
50+3.03 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF8714TRPBFXTMA1
IRF8714TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
73+1.18 EUR
114+0.75 EUR
182+0.46 EUR
Mindestbestellmenge: 73 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R120P7XKSA1 infineon-ipw60r120p7-ds-en.pdf
IPW60R120P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.82 EUR
25+3.45 EUR
30+3.2 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF IRFR4104TRPBF.pdf
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.38 EUR
57+1.51 EUR
67+1.27 EUR
100+1.07 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R450P7XKSA1 Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be
IPA80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 29W
Gate charge: 24nC
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
17+5 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPAN80R360P7XKSA1 IPAN80R360P7.pdf
IPAN80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Mounting: SMD
Case: SOT363
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 0.95A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
459+0.19 EUR
532+0.15 EUR
618+0.14 EUR
658+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DG Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL64B-DG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Interface: I2C
Kind of memory: FRAM
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.98 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-GTR FM24CL64B-GTR-DTE.pdf
FM24CL64B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL64B-DGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Pulsed collector current: 45A
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRLPBF IRF2804STRLPBF.pdf
IRF2804STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.4 EUR
29+2.94 EUR
33+2.65 EUR
50+2.31 EUR
100+2.09 EUR
200+1.93 EUR
500+1.78 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 840 1050 1260 1470 1680 1890 2056 2057 2058 2059 2060 2061 2062 2063 2064 2065 2066 2100 2106  [ Nächste Seite >> ]