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IRL80HS120 IRL80HS120 INFINEON TECHNOLOGIES IRL80HS120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Power dissipation: 5.8W
Gate charge: 4.7nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
On-state resistance: 32mΩ
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D1481N65TVFXPSA1 INFINEON TECHNOLOGIES D1481N.pdf Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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BAW78DH6327XTSA1 INFINEON TECHNOLOGIES baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1us; Ufmax: 1.6V; Ir: 1uA
Mounting: SMD
Max. forward voltage: 1.6V
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 1µs
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IRS10752LTRPBF IRS10752LTRPBF INFINEON TECHNOLOGIES IRS10752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
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BTF3050TEATMA1 INFINEON TECHNOLOGIES Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 40V
Case: TO252-5
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 40mΩ
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BTH500601LUAAUMA1 INFINEON TECHNOLOGIES BTH500601LUAAUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15.9A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 14mΩ
Supply voltage: 12...54V DC
Output current: 15.9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IAUT300N10S5N014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Pulsed drain current: 1315A
Power dissipation: 375W
Gate charge: 216nC
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IAUT300N08S5N011ATMA1 INFINEON TECHNOLOGIES infineon-iaut300n08s5n011-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Pulsed drain current: 1505A
Power dissipation: 375W
Gate charge: 231nC
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IPT60R022S7XTMA1 INFINEON TECHNOLOGIES IPT60R022S7XTMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: CoolMOS™ S7
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Pulsed drain current: 375A
Power dissipation: 390W
Gate charge: 31nC
Produkt ist nicht verfügbar
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IPT029N08N5ATMA1 IPT029N08N5ATMA1 INFINEON TECHNOLOGIES IPT029N08N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Produkt ist nicht verfügbar
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IMT65R083M1HXUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 32A; 158W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 32A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 83mΩ
Power dissipation: 158W
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2000+5.45 EUR
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IPT054N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 143A; 250W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 143A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
On-state resistance: 4.6mΩ
Power dissipation: 250W
Gate charge: 69nC
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2000+2.74 EUR
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IPT013N08NM5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 333A; 278W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 333A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: 20V
On-state resistance: 1mΩ
Power dissipation: 278W
Gate charge: 158nC
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2000+7.51 EUR
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IMT65R039M1HXUMA1 INFINEON TECHNOLOGIES Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 61A; Idm: 122A; 263W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 61A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 39mΩ
Pulsed drain current: 122A
Power dissipation: 263W
Gate charge: 41nC
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2000+3.95 EUR
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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63+1.36 EUR
92+0.94 EUR
106+0.81 EUR
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES irf1104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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ESD231B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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TLD2311ELXUMA1 TLD2311ELXUMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: LED drivers
Description: IC: driver; boost; PG-SSOP-14-EP; 40V; Ch: 3; PWM; Uin: 5.5÷40V; 120mA
Type of integrated circuit: driver
Case: PG-SSOP-14-EP
Number of channels: 3
Integrated circuit features: PWM
Mounting: SMD
Input voltage: 5.5...40V
Maximum output current: 120mA
Operating temperature: -40...150°C
Application: automotive industry
Output voltage: 40V
Topology: boost
Produkt ist nicht verfügbar
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D2450N06TXPSA1 INFINEON TECHNOLOGIES Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Category: Diode modules
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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IAUC60N06S5N074ATMA1 IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 20nC
Technology: OptiMOS™ 5
On-state resistance: 9mΩ
Pulsed drain current: 168A
Produkt ist nicht verfügbar
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SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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27+3.27 EUR
29+2.94 EUR
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SPA08N80C3 SPA08N80C3 INFINEON TECHNOLOGIES INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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SPD02N80C3ATMA1 SPD02N80C3ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 42W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 2.7Ω
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SPP08N80C3XKSA1 SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
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IRF7303TRPBFXTMA1 INFINEON TECHNOLOGIES Infineon-IRF7303-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355f1c70a1afc Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB200N15N3GATMA1 IPB200N15N3GATMA1 INFINEON TECHNOLOGIES IPB200N15N3G-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
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IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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S25FL127SABMFI000 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
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S25FL127SABMFI001 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: tube
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
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S25FL127SABMFI100 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
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S25FL127SABMFV000 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL127SABMFV100 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL127SABMFV101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: tube
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
 Mindestbestellmenge: 455 Stücke
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S25FL127SABMFV103 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2100 Stücke
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S29GL01GT11DHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
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S29GL01GT11DHIV23 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2200 Stücke
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S29GL01GT11DHV023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2200 Stücke
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S29GL01GT11FHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
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S29GL01GT11FHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 360 Stücke
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S29GL01GT11FHIV23 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
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S29GL01GT11TFB020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Application: automotive
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 455 Stücke
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S29GL01GT11TFIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 910 Stücke
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S29GL01GT11TFIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 91 Stücke
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S70GL02GT11FHI010 INFINEON TECHNOLOGIES Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
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IPN60R600P7SATMA1 IPN60R600P7SATMA1 INFINEON TECHNOLOGIES IPN60R600P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223; ESD
Case: PG-SOT223
Mounting: SMD
Power dissipation: 7W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
auf Bestellung 2970 Stücke:
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105+0.82 EUR
139+0.62 EUR
158+0.54 EUR
193+0.44 EUR
224+0.38 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 105 Stücke
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IPA60R600P6XKSA1 IPA60R600P6XKSA1 INFINEON TECHNOLOGIES IPA60R600P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
88+0.98 EUR
100+0.86 EUR
104+0.82 EUR
Mindestbestellmenge: 72 Stücke
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CYUSB3014-BZXI INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
 Mindestbestellmenge: 168 Stücke
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S25FL064LABNFV040 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 490 Stücke
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SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 240 Stücke
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D8320N06TVFXPSA1 INFINEON TECHNOLOGIES Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 INFINEON TECHNOLOGIES IPB120N06S402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES IPP020N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPP020N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP020N06N-DS-v02_03-en.pdf?fileId=db3a3043345a30bc013465ce627962f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 60V; 120A; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 120A
Case: PG-TO220-3
Gate-source voltage: 20V
Mounting: THT
Gate charge: 124nC
auf Bestellung 8900 Stücke:
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500+2.14 EUR
Mindestbestellmenge: 500 Stücke
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IPN70R450P7SATMA1 IPN70R450P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 10A; Idm: 10A; 7.1W; SOT223
Pulsed drain current: 10A
Power dissipation: 7.1W
Gate charge: 13.1nC
Polarisation: N
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 700V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 16V
Case: SOT223
On-state resistance: 370mΩ
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
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IPD50N04S410ATMA1 IPD50N04S410ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 50A; 41W; DPAK; automotive industry
Power dissipation: 41W
Gate charge: 18.2nC
Polarisation: N
Technology: MOSFET
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 8.5mΩ
Mounting: SMD
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
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BSD235CH6327XTSA1 BSD235CH6327XTSA1 INFINEON TECHNOLOGIES BSD235CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
209+0.4 EUR
304+0.29 EUR
363+0.24 EUR
451+0.19 EUR
527+0.17 EUR
1000+0.14 EUR
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IRL80HS120 IRL80HS120.pdf
IRL80HS120
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Power dissipation: 5.8W
Gate charge: 4.7nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
On-state resistance: 32mΩ
Produkt ist nicht verfügbar
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D1481N65TVFXPSA1 D1481N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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BAW78DH6327XTSA1 baw78_baw79series.pdf?folderId=db3a30431400ef6801141c4ed9df0449&fileId=db3a30431400ef6801141c5037ac044a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1us; Ufmax: 1.6V; Ir: 1uA
Mounting: SMD
Max. forward voltage: 1.6V
Application: automotive industry
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRS10752LTRPBF IRS10752ltrpbf.pdf
IRS10752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
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BTF3050TEATMA1 Infineon-BTF3050TE-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c37d7023f
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 40V
Case: TO252-5
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTH500601LUAAUMA1 BTH500601LUAAUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15.9A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: PROFET™
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 14mΩ
Supply voltage: 12...54V DC
Output current: 15.9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N10S5N014ATMA1 Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Pulsed drain current: 1315A
Power dissipation: 375W
Gate charge: 216nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IAUT300N08S5N011ATMA1 infineon-iaut300n08s5n011-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Pulsed drain current: 1505A
Power dissipation: 375W
Gate charge: 231nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT60R022S7XTMA1 IPT60R022S7XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: CoolMOS™ S7
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Pulsed drain current: 375A
Power dissipation: 390W
Gate charge: 31nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPT029N08N5ATMA1 IPT029N08N5.pdf
IPT029N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Produkt ist nicht verfügbar
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IMT65R083M1HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 32A; 158W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 32A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 83mΩ
Power dissipation: 158W
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+5.45 EUR
Mindestbestellmenge: 2000 Stücke
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IPT054N15N5ATMA1 Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 143A; 250W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 150V
Drain current: 143A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
On-state resistance: 4.6mΩ
Power dissipation: 250W
Gate charge: 69nC
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+2.74 EUR
Mindestbestellmenge: 2000 Stücke
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IPT013N08NM5LFATMA1 Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 333A; 278W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 333A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: 20V
On-state resistance: 1mΩ
Power dissipation: 278W
Gate charge: 158nC
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+7.51 EUR
Mindestbestellmenge: 2000 Stücke
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 61A; Idm: 122A; 263W; PG-HSOF-8
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 61A
Case: PG-HSOF-8
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 23V
On-state resistance: 39mΩ
Pulsed drain current: 122A
Power dissipation: 263W
Gate charge: 41nC
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+3.95 EUR
Mindestbestellmenge: 2000 Stücke
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BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5867 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
63+1.36 EUR
92+0.94 EUR
106+0.81 EUR
Mindestbestellmenge: 63 Stücke
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRF1104PBF irf1104.pdf
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.74 EUR
Mindestbestellmenge: 18 Stücke
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ESD231B1W0201E6327XTSA1 Infineon-ESD231-B1-W0201-DS-v01_01-EN.pdf?fileId=5546d462503812bb0150854d4bac4c9d
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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TLD2311ELXUMA1 fundamentals-of-power-semiconductors
TLD2311ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost; PG-SSOP-14-EP; 40V; Ch: 3; PWM; Uin: 5.5÷40V; 120mA
Type of integrated circuit: driver
Case: PG-SSOP-14-EP
Number of channels: 3
Integrated circuit features: PWM
Mounting: SMD
Input voltage: 5.5...40V
Maximum output current: 120mA
Operating temperature: -40...150°C
Application: automotive industry
Output voltage: 40V
Topology: boost
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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D2450N06TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
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IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
IAUC60N06S5N074ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 52W
Gate charge: 20nC
Technology: OptiMOS™ 5
On-state resistance: 9mΩ
Pulsed drain current: 168A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.71 EUR
27+3.27 EUR
29+2.94 EUR
50+2.77 EUR
Mindestbestellmenge: 23 Stücke
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SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
Mindestbestellmenge: 13 Stücke
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SPD02N80C3ATMA1 fundamentals-of-power-semiconductors
SPD02N80C3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Power dissipation: 42W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 2.7Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IRF7303TRPBFXTMA1 Infineon-IRF7303-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355f1c70a1afc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IPB200N15N3GATMA1 IPB200N15N3G-dte.pdf
IPB200N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
IAUC24N10S5L300ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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S25FL127SABMFI000 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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S25FL127SABMFI001 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: tube
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL127SABMFI100 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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S25FL127SABMFV000 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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S25FL127SABMFV100 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: in-tray
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 280 Stücke
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S25FL127SABMFV101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: tube
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 455 Stücke
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S25FL127SABMFV103 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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S29GL01GT11DHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 520 Stücke
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S29GL01GT11DHIV23 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2200 Stücke
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S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2200 Stücke
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S29GL01GT11FHIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
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S29GL01GT11FHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
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S29GL01GT11FHIV23 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Output voltage: 1.65...3.6V DC
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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S29GL01GT11TFB020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Application: automotive
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 455 Stücke
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S29GL01GT11TFIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 910 Stücke
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S29GL01GT11TFIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 91 Stücke
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S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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IPN60R600P7SATMA1 IPN60R600P7S.pdf
IPN60R600P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223; ESD
Case: PG-SOT223
Mounting: SMD
Power dissipation: 7W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
139+0.62 EUR
158+0.54 EUR
193+0.44 EUR
224+0.38 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 105 Stücke
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IPA60R600P6XKSA1 IPA60R600P6-DTE.pdf
IPA60R600P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 7.3A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
88+0.98 EUR
100+0.86 EUR
104+0.82 EUR
Mindestbestellmenge: 72 Stücke
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CYUSB3014-BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
Mindestbestellmenge: 168 Stücke
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S25FL064LABNFV040 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 490 Stücke
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SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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D8320N06TVFXPSA1 Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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IPB120N06S402ATMA2 IPB120N06S402.pdf
IPB120N06S402ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N06NAKSA1 IPP020N06NAKSA1-DTE.pdf
IPP020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
IAUC120N06S5N017ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPP020N06NXKSA1 Infineon-IPP020N06N-DS-v02_03-en.pdf?fileId=db3a3043345a30bc013465ce627962f5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 60V; 120A; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 120A
Case: PG-TO220-3
Gate-source voltage: 20V
Mounting: THT
Gate charge: 124nC
auf Bestellung 8900 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+2.14 EUR
Mindestbestellmenge: 500 Stücke
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IPN70R450P7SATMA1 Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78
IPN70R450P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 10A; Idm: 10A; 7.1W; SOT223
Pulsed drain current: 10A
Power dissipation: 7.1W
Gate charge: 13.1nC
Polarisation: N
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 700V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 16V
Case: SOT223
On-state resistance: 370mΩ
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
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IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
IPD50N04S410ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 50A; 41W; DPAK; automotive industry
Power dissipation: 41W
Gate charge: 18.2nC
Polarisation: N
Technology: MOSFET
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK
On-state resistance: 8.5mΩ
Mounting: SMD
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
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BSD235CH6327XTSA1 BSD235CH6327XTSA1.pdf
BSD235CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
209+0.4 EUR
304+0.29 EUR
363+0.24 EUR
451+0.19 EUR
527+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 152 Stücke
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