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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES BSC010N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES SN7002NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 141nC
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 121nC
Version: ESD
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 136nC
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BCV46E6327 BCV46E6327 INFINEON TECHNOLOGIES BCV46E6327.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
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BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
 BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
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BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES BCR158.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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BCX70HE6327 BCX70HE6327 INFINEON TECHNOLOGIES BCX70.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 250MHz
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES BCR503.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES BC847SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
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BCX71GE6327 BCX71GE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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BCW67CE6327 BCW67CE6327 INFINEON TECHNOLOGIES BCW67B.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
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FM24V05-GTR FM24V05-GTR INFINEON TECHNOLOGIES FM24V05-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM24V05-G FM24V05-G INFINEON TECHNOLOGIES FM24V05-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM24VN10-GTR FM24VN10-GTR INFINEON TECHNOLOGIES FM24VN10-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM24W256-GTR FM24W256-GTR INFINEON TECHNOLOGIES FM24W256-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES BCX42E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
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IAUC100N08S5N031ATMA1 IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
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IAUC100N08S5N034ATMA1 IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
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IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
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IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES irfr120n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
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CY15B104Q-LHXIT CY15B104Q-LHXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 4Mb FRAM
Kind of interface: serial
Memory organisation: 512kx8bit
Case: TDFN8
Interface: SPI
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CY15B104Q-SXIT CY15B104Q-SXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 4Mb FRAM
Kind of interface: serial
Memory organisation: 512kx8bit
Case: SO8
Interface: SPI
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FM1808B-SGTR FM1808B-SGTR INFINEON TECHNOLOGIES FM1808B-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 4.5...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES IRFP4868PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Power dissipation: 517W
Gate charge: 180nC
Technology: HEXFET®
Gate-source voltage: ±20V
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IRFP4868PBFAKMA1 IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES irfb4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES IPB017N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES IPB017N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 6...20V DC
Output current: -3.3...2.3A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Turn-on time: 50ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 50ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV30LL-55BAXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV30LL-55ZXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62146ELL-45ZSXI CY62146ELL-45ZSXI INFINEON TECHNOLOGIES CY62146ELL-45ZSXI.PDF Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
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CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45ZSXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Bandwidth: 0.1...5GHz
Application: telecommunication
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S25FL256LAGNFV010 S25FL256LAGNFV010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Interface: SPI
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S25FL127SABNFI101 S25FL127SABNFI101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Operating frequency: 108MHz
Interface: SPI
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
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SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BAT60BE6359HTMA1 INFINEON TECHNOLOGIES Infineon-BAT60BSERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSI-DTE.pdf
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
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SN7002NH6327XTSA2 SN7002NH6327XTSA2.pdf
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
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IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 141nC
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IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 121nC
Version: ESD
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IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 136nC
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327.pdf
BCV46E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
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BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
Produkt ist nicht verfügbar
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BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR185E6327 BCR185.pdf
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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BCX71KE6327 BCX71.pdf
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
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BCR158E6327 BCR158.pdf
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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BCX70HE6327 BCX70.pdf
BCX70HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 250MHz
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BCX71HE6327 BCX71.pdf
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2365 Stücke:
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BCR503E6327HTSA1 BCR503.pdf
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
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BC847SH6327XTSA1 BC847SH6327.pdf
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
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BCX71GE6327 BCX71.pdf
BCX71GE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2720 Stücke:
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BCW67CE6327 BCW67B.pdf
BCW67CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 48 Stücke:
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FM24V05-GTR FM24V05-DTE.pdf
FM24V05-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24V05-G FM24V05-DTE.pdf
FM24V05-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24VN10-GTR FM24VN10-DTE.pdf
FM24VN10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FM24W256-GTR FM24W256-DTE.pdf
FM24W256-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BCX42E6327 BCX42E6327.pdf
BCX42E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Produkt ist nicht verfügbar
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
IAUC100N08S5N031ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
IAUC100N08S5N034ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
IAUC100N08S5N043ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFU120NPBF irfr120n.pdf
IRFU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
auf Bestellung 1305 Stücke:
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CY15B104Q-LHXIT CY15B104Q-DTE.pdf
CY15B104Q-LHXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 4Mb FRAM
Kind of interface: serial
Memory organisation: 512kx8bit
Case: TDFN8
Interface: SPI
Produkt ist nicht verfügbar
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CY15B104Q-SXIT CY15B104Q-DTE.pdf
CY15B104Q-SXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 4Mb FRAM
Kind of interface: serial
Memory organisation: 512kx8bit
Case: SO8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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FM1808B-SGTR FM1808B-DTE.pdf
FM1808B-SGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 4.5...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BCX41E6327 BCX41.pdf
BCX41E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRFP4868PBF IRFP4868PBF.pdf
IRFP4868PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Power dissipation: 517W
Gate charge: 180nC
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFP4868PBFAKMA1
IRFP4868PBFAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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IRFB4229PBF irfb4229pbf.pdf
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 IPB017N10N5-DTE.pdf
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 988 Stücke:
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IPB017N06N3GATMA1 IPB017N06N3G-DTE.pdf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 6...20V DC
Output current: -3.3...2.3A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Turn-on time: 50ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 50ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62177EV30LL-55BAXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 210 Stücke
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CY62177EV30LL-55ZXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Produkt ist nicht verfügbar
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CY62177EV18LL-70BAXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 210 Stücke
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CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY62146ELL-45ZSXI CY62146ELL-45ZSXI.PDF
CY62146ELL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
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CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV18LL-55BVXIT ?docID=45535
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45B2XIT ?docID=45537
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62147EV30LL-45ZSXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Bandwidth: 0.1...5GHz
Application: telecommunication
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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S25FL256LAGNFV010 S25FL.pdf
S25FL256LAGNFV010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Interface: SPI
auf Bestellung 1511 Stücke:
Lieferzeit 14-21 Tag (e)
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S25FL127SABNFI101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL127SABNFI101
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Operating frequency: 108MHz
Interface: SPI
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
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BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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