Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129137) > Seite 2084 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
 Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double independent Max. forward voltage: 1V Max. forward impulse current: 0.1A Power dissipation: 0.25W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY7C1312KV18-250BZXCT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Mounting: SMD Case: FBGA165 Operating temperature: 0...70°C Kind of package: reel; tape Frequency: 250MHz Kind of interface: parallel Kind of memory: SRAM Supply voltage: 1.7...1.9V DC Memory: 18Mb SRAM Memory organisation: 1Mx18bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BTS640S2G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 11.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-7 On-state resistance: 27mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF2804PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 280A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Polarisation: unipolar Technology: HEXFET® Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel Power dissipation: 2W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5801TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6 Mounting: SMD Case: TSOP6 Kind of package: reel Power dissipation: 2W Polarisation: unipolar Technology: HEXFET® Drain current: 0.6A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET |
auf Bestellung 824 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD On-state resistance: 3.4mΩ Power dissipation: 167W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB014N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP014N06NF2SAKMA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Power dissipation: 300W Case: TO220-3 On-state resistance: 1.4mΩ Mounting: THT Gate charge: 203nC Kind of channel: enhancement |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC014N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB054N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSC034N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB034N06N3GATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: TO263-7 Mounting: SMD Gate charge: 130nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A Semiconductor structure: double series Case: SOT23 Type of diode: switching Mounting: SMD Max. forward impulse current: 12A Max. forward voltage: 1.2V Features of semiconductor devices: PIN Max. off-state voltage: 150V Load current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Case: SOT23 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape |
auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape |
auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V Mounting: SMD Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 150V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Case: SC79 Type of diode: switching |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Case: SC79 Capacitance: 0.5pF Type of diode: varicap Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 30V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BAR6405E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry Type of diode: switching Mounting: SMD Power dissipation: 0.25W Application: automotive industry Max. off-state voltage: 150V Load current: 0.1A Semiconductor structure: common cathode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 0.1A; 250mW; single diode; Ufmax: 1.1V Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape Power dissipation: 0.25W Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6305WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Mounting: SMD Semiconductor structure: common cathode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape Power dissipation: 0.25W Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6306WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Mounting: SMD Semiconductor structure: common cathode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape Power dissipation: 0.25W Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6406E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry Type of diode: switching Mounting: SMD Power dissipation: 0.25W Application: automotive industry Max. off-state voltage: 150V Load current: 0.1A Semiconductor structure: common anode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6702VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD Mounting: SMD Type of diode: switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSC100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8 Mounting: SMD Pulsed drain current: 200A Power dissipation: 50W Gate charge: 45nC Polarisation: unipolar Technology: OptiMOS™ 3 Features of semiconductor devices: logic level Drain current: 36A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TDSON-8 On-state resistance: 10mΩ |
auf Bestellung 7643 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 50A Power dissipation: 125W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1403 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC146N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 52W Case: PG-TDSON-8 On-state resistance: 15.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 7.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC100N10NSFGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.4A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.4A Power dissipation: 156W Case: PG-TDSON-8 On-state resistance: 10mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSC252N10NSFGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Mounting: SMD Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ 2 Drain current: 40A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TDSON-8 On-state resistance: 25.2mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IR2130SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 675ns Turn-off time: 475ns |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2136SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -0.35...0.2A Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.4µs Turn-off time: 380ns |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2133SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 0.6/1.2kV Turn-on time: 750ns Turn-off time: 700ns |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR2130STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC28; 500mA; Ch: 6; MOSFET; U: 600V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC28 Output current: 0.5A Number of channels: 6 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR2130JTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IR2136STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -0.35...0.2A Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.4µs Turn-off time: 380ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSP742R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V |
auf Bestellung 1588 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch On-state resistance: 0.25Ω Mounting: SMD Output current: 0.4A Kind of output: N-Channel Technology: Classic PROFET Kind of package: reel Case: SO8 Kind of integrated circuit: high-side Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY7C65634-28LTXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; in-tray,tube Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: in-tray; tube Case: QFN28 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65634-28LTXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; reel,tape Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: reel; tape Case: QFN28 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65634-48AXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; in-tray,tube Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: in-tray; tube Case: TQFP48 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65634-48AXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: reel; tape Case: TQFP48 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65642-28LTXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28 Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller USB speed: Full Speed Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: in-tray; tube Case: QFN28 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65642-28LTXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28 Type of integrated circuit: USB interface Interface: I2C; SPI Kind of integrated circuit: HUB controller USB speed: Full Speed Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC Kind of package: reel; tape Case: QFN28 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CY7C65211-24LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 1.71÷5.5VDC Type of integrated circuit: USB controller Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0 Kind of integrated circuit: USB controller Supply voltage: 1.71...5.5V DC Case: QFN24 Integrated circuit features: USB HUB Mounting: SMD Operating temperature: -40...85°C Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY7C65215-32LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 500BFLASH Type of integrated circuit: USB controller Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Case: QFN32 Integrated circuit features: USB full speed; USB HUB Number of inputs/outputs: 21 Memory: 500B FLASH Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CYUSB3324-88LTXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: interface; I2C; HUB controller; SuperSpeed; QFN88; ESD Type of integrated circuit: interface Interface: I2C Kind of integrated circuit: HUB controller USB speed: SuperSpeed Mounting: SMD Operating temperature: 0...70°C Version: ESD Case: QFN88 Integrated circuit features: USB HUB Data transfer rate: 5Gbps Application: for controller; USB |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 168 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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|
FM25V20A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; SO8 Interface: SPI Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: SO8 Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V02A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V01A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 128kb FRAM Interface: SPI Memory organisation: 16kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V02A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25W256-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷5.5VDC; 20MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2.7...5.5V DC Clock frequency: 20MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25L04B-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4kb FRAM Interface: SPI Memory organisation: 512x8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25L04B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4kb FRAM Interface: SPI Memory organisation: 512x8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25640B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8 Interface: SPI Clock frequency: 20MHz Memory: 64kb FRAM Kind of interface: serial Memory organisation: 8kx8bit Case: SO8 Kind of memory: FRAM Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAS7007E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1312KV18-250BZXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS640S2G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF2804PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFTS9342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
Power dissipation: 2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLTS2242TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLTS6342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5801TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5802TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD034N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 3.4mΩ
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 3.4mΩ
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB014N06NATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP014N06NF2SAKMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC014N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB054N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC034N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB034N06N3GATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR66E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6303WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6404E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Mounting: SMD
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6502VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6405E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6404WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 0.1A; 250mW; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Category: Diodes - others
Description: Diode: switching; 150V; 0.1A; 250mW; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6305WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: common cathode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: common cathode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6306WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: common cathode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; 250mW; common cathode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Mounting: SMD
Semiconductor structure: common cathode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6406E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common anode
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common anode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6702VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD
Mounting: SMD
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD
Mounting: SMD
Type of diode: switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC100N06LS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 50W
Gate charge: 45nC
Polarisation: unipolar
Technology: OptiMOS™ 3
Features of semiconductor devices: logic level
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 10mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 50W
Gate charge: 45nC
Polarisation: unipolar
Technology: OptiMOS™ 3
Features of semiconductor devices: logic level
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 10mΩ
auf Bestellung 7643 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC190N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 125W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 125W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1403 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC146N10LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC100N10NSFGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.4A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.4A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.4A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.4A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC120N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC252N10NSFGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 25.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 25.2mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2130SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2136SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2133SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2130STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 500mA; Ch: 6; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.5A
Number of channels: 6
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 500mA; Ch: 6; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.5A
Number of channels: 6
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2130JTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2136STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP742R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1588 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP742RIXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
On-state resistance: 0.25Ω
Mounting: SMD
Output current: 0.4A
Kind of output: N-Channel
Technology: Classic PROFET
Kind of package: reel
Case: SO8
Kind of integrated circuit: high-side
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
On-state resistance: 0.25Ω
Mounting: SMD
Output current: 0.4A
Kind of output: N-Channel
Technology: Classic PROFET
Kind of package: reel
Case: SO8
Kind of integrated circuit: high-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65634-28LTXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; in-tray,tube
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: QFN28
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; in-tray,tube
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: QFN28
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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| CY7C65634-28LTXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: QFN28
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; QFN28; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: QFN28
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| CY7C65634-48AXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; in-tray,tube
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: TQFP48
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; in-tray,tube
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| CY7C65634-48AXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; TQFP48; reel,tape
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: TQFP48
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CY7C65642-28LTXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
USB speed: Full Speed
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: QFN28
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
USB speed: Full Speed
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: in-tray; tube
Case: QFN28
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65642-28LTXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
USB speed: Full Speed
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: QFN28
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB interface; I2C,SPI; HUB controller; Full Speed; QFN28
Type of integrated circuit: USB interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
USB speed: Full Speed
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Kind of package: reel; tape
Case: QFN28
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| CY7C65211-24LTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 1.71÷5.5VDC
Type of integrated circuit: USB controller
Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Case: QFN24
Integrated circuit features: USB HUB
Mounting: SMD
Operating temperature: -40...85°C
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 1.71÷5.5VDC
Type of integrated circuit: USB controller
Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0
Kind of integrated circuit: USB controller
Supply voltage: 1.71...5.5V DC
Case: QFN24
Integrated circuit features: USB HUB
Mounting: SMD
Operating temperature: -40...85°C
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65215-32LTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 500BFLASH
Type of integrated circuit: USB controller
Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Case: QFN32
Integrated circuit features: USB full speed; USB HUB
Number of inputs/outputs: 21
Memory: 500B FLASH
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8bit,GPIO,I2C,SPI,UART,USB 2.0; 500BFLASH
Type of integrated circuit: USB controller
Interface: 8bit; GPIO; I2C; SPI; UART; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Case: QFN32
Integrated circuit features: USB full speed; USB HUB
Number of inputs/outputs: 21
Memory: 500B FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB3324-88LTXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; HUB controller; SuperSpeed; QFN88; ESD
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: HUB controller
USB speed: SuperSpeed
Mounting: SMD
Operating temperature: 0...70°C
Version: ESD
Case: QFN88
Integrated circuit features: USB HUB
Data transfer rate: 5Gbps
Application: for controller; USB
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; HUB controller; SuperSpeed; QFN88; ESD
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: HUB controller
USB speed: SuperSpeed
Mounting: SMD
Operating temperature: 0...70°C
Version: ESD
Case: QFN88
Integrated circuit features: USB HUB
Data transfer rate: 5Gbps
Application: for controller; USB
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)
| FM25V20A-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; SO8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: SO8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; SO8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: SO8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V02A-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V01A-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V02A-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25W256-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷5.5VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷5.5VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25640B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Interface: SPI
Clock frequency: 20MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SO8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Interface: SPI
Clock frequency: 20MHz
Memory: 64kb FRAM
Kind of interface: serial
Memory organisation: 8kx8bit
Case: SO8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH