Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128350) > Seite 2084 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BSC050N04LSGATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
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IPA65R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
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IPT004N03LATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: tape Kind of channel: enhancement |
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IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 53A Version: ESD |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R180P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhancement |
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IPW60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25nC Version: ESD |
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IPD60R180P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 72W Case: DPAK; TO252 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD60R180P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 72W Case: DPAK3 On-state resistance: 0.18Ω Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPAW60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 26W Case: TO220-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 25nC Kind of channel: enhancement |
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IPZA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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TD500N16KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 900A |
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TD500N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: screw Mechanical mounting: screw Max. load current: 900A |
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TT500N14KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TT500N16KOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TT570N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 570A Case: BG-PB60AT-1 Max. forward voltage: 1.27V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ600N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1 Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1 Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1 Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRS23364DJPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: SMD Case: PLCC44 Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 655ns Power: 2W Kind of package: tube Turn-off time: 580ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 Topology: IGBT three-phase bridge; MOSFET three-phase bridge Supply voltage: 11.5...20V DC Output current: -0.35...0.2A |
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BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -1A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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| DD180N22SHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw Max. forward voltage: 1.39V Case: BG-PB34SB-1 Mechanical mounting: screw Load current: 226A Max. off-state voltage: 2.2kV Max. forward impulse current: 5.75kA Electrical mounting: screw Semiconductor structure: double series Type of semiconductor module: diode |
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CY62157EV30LL-45ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Mounting: SMD Access time: 45ns Type of integrated circuit: SRAM memory Memory: 8Mb SRAM Kind of interface: parallel Memory organisation: 512kx16bit Case: TSOP44 II Operating voltage: 2.2...3.6V Kind of memory: SRAM |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2117STRPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Output current: 0.2A Type of integrated circuit: driver Integrated circuit features: MOSFET Voltage class: 600V Case: SOIC8 Kind of integrated circuit: high-side; low-side Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFL024ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.8W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY8C27443-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH Interface: GPIO; I2C; SPI; UART Mounting: SMD Case: SO28 Operating temperature: -40...85°C Supply voltage: 3...5.25V DC Number of inputs/outputs: 24 Memory: 256B SRAM; 16kB FLASH Clock frequency: 24MHz Integrated circuit features: watchdog Kind of core: 8-bit Type of integrated circuit: PSoC microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 47 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CY8C28403-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH Interface: GPIO; I2C; SPI; UART Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 3...5.25V DC Number of inputs/outputs: 24 Memory: 1kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 8-bit Type of integrated circuit: PSoC microcontroller |
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CY8C28445-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH Interface: GPIO; I2C; SPI; UART Mounting: SMD Case: SSOP28 Operating temperature: -40...85°C Supply voltage: 3...5.25V DC Number of inputs/outputs: 24 Memory: 1kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 8-bit Type of integrated circuit: PSoC microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2350 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Case: PG-TSDSON-8 On-state resistance: 10mΩ Mounting: SMD Power dissipation: 30W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 39A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| BDP 947 H6327 TR | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: BDP 947 H6327 TR |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IR2117SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2117PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP110N20NAAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 88A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 8577 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 10835 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC858BE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PVD1352NPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 550mA On-state resistance: 1.5Ω Mounting: THT Case: DIP8 Body dimensions: 9.39x6.47x4.57mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR108SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Mounting: SMD Base resistor: 2.2kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 170MHz Collector current: 0.1A Collector-emitter voltage: 50V |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU5305PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Case: IPAK Mounting: THT Kind of channel: enhancement Drain-source voltage: -55V Type of transistor: P-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Drain current: -28A |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGCM10F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...18.5/0...400V DC Protection: anti-overload OPP; undervoltage UVP Power dissipation: 26.1W Technology: ClPOS™ Mini; TRENCHSTOP™ Voltage class: 600V |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TLE4264GHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 5.5...45V Output current: 0.16A Type of integrated circuit: voltage regulator Voltage drop: 0.25V Operating temperature: -40...150°C Output voltage: 5V Kind of package: reel; tape Case: PG-SOT223-4 Number of channels: 1 Tolerance: ±2% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IPP011N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 201A Power dissipation: 375W Case: TO220-3 On-state resistance: 1.15mΩ Mounting: THT Gate charge: 0.21µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IDH10G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 44A Leakage current: 77µA Power dissipation: 72W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS70302EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape Operating temperature: -40...150°C Output current: 4.5A Type of integrated circuit: power switch Kind of output: N-Channel Technology: PROFET™+2 Kind of package: reel; tape Case: PG-TSDSO-14 Kind of integrated circuit: high-side Number of channels: 2 On-state resistance: 25mΩ Mounting: SMD Supply voltage: 4.1...28V DC |
auf Bestellung 2934 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.7A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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| S29GL064S80BHV030 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 676 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Mounting: SMD Case: TSLP-3-1 Collector-emitter voltage: 15V Power dissipation: 0.38W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Kind of package: reel; tape Frequency: 14GHz Collector current: 80mA |
auf Bestellung 11825 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR193L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSLP-3-1 Mounting: SMD Frequency: 8GHz Kind of package: reel; tape |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS500851TMBAKSA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-11 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB65R110CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: D2PAK; TO263 On-state resistance: 99mΩ Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB65R110CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO263-3 On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
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BTS70041EPPXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W Type of integrated circuit: power switch On-state resistance: 8mΩ Mounting: SMD Supply voltage: 4.1...28V DC Output current: 15A Kind of output: N-Channel Operating temperature: -40...150°C Technology: PROFET™+ 12V Turn-on time: 210µs Case: SO14-W Turn-off time: 220µs Kind of integrated circuit: high-side Number of channels: 1 |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Output current: 3A Type of integrated circuit: power switch Kind of output: N-Channel Technology: PROFET™+ 12V Case: DSO8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 90mΩ Mounting: SMD Supply voltage: 13.5V DC |
auf Bestellung 1672 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Mounting: SMD Output current: 4A Type of integrated circuit: power switch Kind of output: N-Channel Operating temperature: -40...150°C Technology: HITFET® Turn-on time: 115µs Output voltage: 40V Case: SO8-EP Turn-off time: 210µs Kind of integrated circuit: low-side Number of channels: 1 On-state resistance: 0.1Ω |
auf Bestellung 2794 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Technology: High Current PROFET Case: TO252-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 12mΩ Mounting: SMD Supply voltage: 5.5...20V DC |
auf Bestellung 858 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 70mΩ Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 70mΩ Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Power dissipation: 139W Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Technology: OptiMOS™ Drain current: 100A Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC050N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA65R380C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB65R380C6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPT004N03LATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R180P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB60R180P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R180P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R180P7SAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R180P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPAW60R180P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPZA60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD500N16KOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD500N18KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT500N14KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT500N16KOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT570N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TZ600N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TZ500N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TZ500N18KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS23364DJPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 655ns
Power: 2W
Kind of package: tube
Turn-off time: 580ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 11.5...20V DC
Output current: -0.35...0.2A
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 655ns
Power: 2W
Kind of package: tube
Turn-off time: 580ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 11.5...20V DC
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP322PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
| DD180N22SHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY62157EV30LL-45ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Access time: 45ns
Type of integrated circuit: SRAM memory
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Operating voltage: 2.2...3.6V
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Access time: 45ns
Type of integrated circuit: SRAM memory
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Operating voltage: 2.2...3.6V
Kind of memory: SRAM
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2117STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFL024ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C27443-24PVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 47 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C28403-24PVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C28445-24PVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2350 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ100N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Case: PG-TSDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Case: PG-TSDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BDP 947 H6327 TR |
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2117SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2117PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP110N20NAAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6N022ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6N028ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS806NEH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 8577 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS806NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10835 Stücke:
Lieferzeit 14-21 Tag (e)
| BC858BE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| PVD1352NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR108SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFU5305PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: -55V
Type of transistor: P-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -28A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: -55V
Type of transistor: P-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Drain current: -28A
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| IGCM10F60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4264GHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.16A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.16A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Tolerance: ±2%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP011N04NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDH10G65C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS70302EPAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Output current: 4.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 25mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Output current: 4.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 25mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
auf Bestellung 2934 Stücke:
Lieferzeit 14-21 Tag (e)
| BSO220N03MDGXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
| S29GL064S80BHV030 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 676 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFR380L3E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Case: TSLP-3-1
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Case: TSLP-3-1
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
auf Bestellung 11825 Stücke:
Lieferzeit 14-21 Tag (e)
| BFR193L3E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS500851TMBAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R110CFDAATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R110CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS70041EPPXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
On-state resistance: 8mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 15A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Turn-on time: 210µs
Case: SO14-W
Turn-off time: 220µs
Kind of integrated circuit: high-side
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
On-state resistance: 8mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 15A
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Turn-on time: 210µs
Case: SO14-W
Turn-off time: 220µs
Kind of integrated circuit: high-side
Number of channels: 1
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS5090-1EJA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 90mΩ
Mounting: SMD
Supply voltage: 13.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Output current: 3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 90mΩ
Mounting: SMD
Supply voltage: 13.5V DC
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS3050EJ |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
auf Bestellung 2794 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS5012SDA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 12mΩ
Mounting: SMD
Supply voltage: 5.5...20V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 12mΩ
Mounting: SMD
Supply voltage: 5.5...20V DC
auf Bestellung 858 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS3035TF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS3035EJ |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC010N04LSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Power dissipation: 139W
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 100A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Power dissipation: 139W
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 100A
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH