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IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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ITS4142N ITS4142N INFINEON TECHNOLOGIES ITS4142N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Power dissipation: 1.4W
Operating temperature: -30...85°C
Turn-on time: 150µs
Kind of package: reel; tape
Turn-off time: 0.1ms
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ITS4130QEPDXUMA1 INFINEON TECHNOLOGIES ITS4130QEPD.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.25A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.8W
Operating temperature: -40...150°C
Turn-on time: 75µs
Kind of package: reel; tape
Turn-off time: 75µs
On-state resistance: 0.13Ω
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES IPB011N04NG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES IPB011N04LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BB640E6327HTSA1 BB640E6327HTSA1 INFINEON TECHNOLOGIES BB640E-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Leakage current: 0.2µA
Capacitance: 2.8...76pF
Type of diode: varicap
Mounting: SMD
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BFP420H6327XTSA1 BFP420H6327XTSA1 INFINEON TECHNOLOGIES BFP420.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
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IPT007N06NATMA1 IPT007N06NATMA1 INFINEON TECHNOLOGIES IPT007N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
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BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES BFP650H6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
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BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES BFP650FH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: TSFP-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: BG-SB20-1
Max. forward voltage: 1.6V
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES FF200R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Power dissipation: 1.05kW
Mechanical mounting: screw
Pulsed collector current: 400A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES FF200R17KE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES BSP171PL6327-Infineon.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
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S25FL512SAGBHMC10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES BCR141.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 22kΩ
Case: SOT23
Frequency: 130MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES IGCM04G60HA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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S25FS256TDPBHI113 INFINEON TECHNOLOGIES Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
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AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES auirf1010z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDH20G120C5XKSA1 IDH20G120C5XKSA1 INFINEON TECHNOLOGIES IDH20G120C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 330W
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IDH20G65C6XKSA1 IDH20G65C6XKSA1 INFINEON TECHNOLOGIES IDH20G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
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IDH20G65C5 IDH20G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Power dissipation: 157W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 4.1µA
Case: PG-TO220-2
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IRLHS6242TRPBF IRLHS6242TRPBF INFINEON TECHNOLOGIES irlhs6242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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DZ600N12K DZ600N12K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Pulsed collector current: 72A
Type of transistor: IGBT
Turn-on time: 35ns
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES TLE4271-2G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES irfl4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BBY5303WE6327HTSA1 BBY5303WE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BBY53SERIES-DS-v01_01-en.pdf Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Case: SOD323
Capacitance: 1.85...5.8pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
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BB535E7904HTSA1 BB535E7904HTSA1 INFINEON TECHNOLOGIES BB535-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Case: SOD323
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Capacitance: 5.5...19.6pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 16V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2kV
Electrical mounting: screw
Load current: 330A
Semiconductor structure: double series
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DD340N22SHPSA1 INFINEON TECHNOLOGIES DD340N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
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BSC030N04NSGATMA1 BSC030N04NSGATMA1 INFINEON TECHNOLOGIES BSC030N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES IPD025N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES SPD18P06PGBTMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2329 Stücke:
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
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IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES IPD031N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES IPD031N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1564 Stücke:
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IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1449 Stücke:
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IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9nC
Version: ESD
auf Bestellung 1980 Stücke:
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IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFS4410ZTRLPBF IRFS4410ZTRLPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 153A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 8.2µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES IDW40G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 4.1µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 INFINEON TECHNOLOGIES DDB6U50N16W1R.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-EASY1B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U134N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U104N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
Technology: EconoBRIDGE™
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Technology: EconoPACK™ 2
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP640-DS-v03_00-EN.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2554 Stücke:
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BFP740H6327XTSA1 BFP740H6327XTSA1 INFINEON TECHNOLOGIES BFP740.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
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 Mindestbestellmenge: 3 Stücke
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 141 Stücke:
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IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Mounting: THT
Pulsed drain current: 200A
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 8.3mΩ
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IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
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IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ITS4142N ITS4142N.pdf
ITS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Power dissipation: 1.4W
Operating temperature: -30...85°C
Turn-on time: 150µs
Kind of package: reel; tape
Turn-off time: 0.1ms
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ITS4130QEPDXUMA1 ITS4130QEPD.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.25A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.8W
Operating temperature: -40...150°C
Turn-on time: 75µs
Kind of package: reel; tape
Turn-off time: 75µs
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPB011N04NGATMA1 IPB011N04NG-dte.pdf
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 IPB011N04LG-DTE.pdf
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BB640E6327HTSA1 BB640E-DTE.pdf
BB640E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Leakage current: 0.2µA
Capacitance: 2.8...76pF
Type of diode: varicap
Mounting: SMD
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BFP420H6327XTSA1 BFP420.pdf
BFP420H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
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IPT007N06NATMA1 IPT007N06N-DTE.pdf
IPT007N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP650H6327 BFP650H6327-DTE.pdf
BFP650H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
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BFP650FH6327 BFP650FH6327-dte.pdf
BFP650FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: TSFP-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
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DD100N16S DD100N16S.pdf
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 130A
Case: BG-SB20-1
Max. forward voltage: 1.6V
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
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FF200R12KE3HOSA1 FF200R12KE3.pdf
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Power dissipation: 1.05kW
Mechanical mounting: screw
Pulsed collector current: 400A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
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FF200R17KE4HOSA1 FF200R17KE4.pdf
FF200R17KE4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
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BSP171PL6327 BSP171PL6327-Infineon.pdf
BSP171PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL512SAGBHMC10
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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BCR141E6327 BCR141.pdf
BCR141E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 22kΩ
Case: SOT23
Frequency: 130MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
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IGCM04G60HAXKMA1 IGCM04G60HA.pdf
IGCM04G60HAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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S25FS256TDPBHI113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
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Mindestbestellmenge: 2500 Stücke
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IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
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AUIRF1010ZSTRL auirf1010z.pdf
AUIRF1010ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IDH20G120C5XKSA1 IDH20G120C5-DTE.pdf
IDH20G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 330W
auf Bestellung 486 Stücke:
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IDH20G65C6XKSA1 IDH20G65C6.pdf
IDH20G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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IDH20G65C5
IDH20G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Power dissipation: 157W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 4.1µA
Case: PG-TO220-2
Produkt ist nicht verfügbar
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IRLHS6242TRPBF irlhs6242pbf.pdf
IRLHS6242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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DZ600N12K DZ600N18K.pdf
DZ600N12K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
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BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
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AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Pulsed collector current: 72A
Type of transistor: IGBT
Turn-on time: 35ns
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
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IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
Produkt ist nicht verfügbar
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TLE42712GATMA1 TLE4271-2G.pdf
TLE42712GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
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IRFL4105TRPBF irfl4105pbf.pdf
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1485 Stücke:
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BBY5303WE6327HTSA1 Infineon-BBY53SERIES-DS-v01_01-en.pdf
BBY5303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Case: SOD323
Capacitance: 1.85...5.8pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
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BB535E7904HTSA1 BB535-DTE.pdf
BB535E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Case: SOD323
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
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BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Capacitance: 5.5...19.6pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 16V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1878 Stücke:
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DD340N20SHPSA1 DD340N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2kV
Electrical mounting: screw
Load current: 330A
Semiconductor structure: double series
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DD340N22SHPSA1 DD340N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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BSC030N04NSGATMA1 BSC030N04NSG-DTE.pdf
BSC030N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3255 Stücke:
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IPD025N06NATMA1 IPD025N06N-DTE.pdf
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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SPD18P06PGBTMA1 SPD18P06PGBTMA1-DTE.PDF
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2134 Stücke:
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IPD031N06L3GATMA1 IPD031N06L3G-DTE.pdf
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 344 Stücke:
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IPD031N03LGATMA1 IPD031N03LG-DTE.pdf
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9nC
Version: ESD
auf Bestellung 1980 Stücke:
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IPD075N03LGATMA1 IPD075N03LG-DTE.pdf
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
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IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFS4410ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 153A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 8.2µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5B.pdf
IDW40G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 4.1µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 DDB6U50N16W1R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-EASY1B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 DDB6U134N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 DDB6U104N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
Technology: EconoBRIDGE™
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Technology: EconoPACK™ 2
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BFP640H6327XTSA1 Infineon-BFP640-DS-v03_00-EN.pdf
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2554 Stücke:
Lieferzeit 14-21 Tag (e)
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BFP740H6327XTSA1 BFP740.pdf
BFP740H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 3 Stücke
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IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
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IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Mounting: THT
Pulsed drain current: 200A
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 8.3mΩ
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
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IRFR2405TRPBF description irfr2405pbf.pdf
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BCV27E6327 BCV27E6327.pdf
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)
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