Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129147) > Seite 2083 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IRS21864SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2181STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IRS2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IRS21864STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRS21814STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Supply voltage: 10...20V DC Operating temperature: -40...125°C Type of integrated circuit: driver Voltage class: 600V Turn-on time: 220ns Power: 1W Kind of package: reel; tape Case: SO14 Turn-off time: 240ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRS2101STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRS21271STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current sensor; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 190ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2183STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7205TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 3683 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7105TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 3.5/-2.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1/0.25Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7101TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF7104TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC858CE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -250...120mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 750ns Power: 625mW Kind of package: reel; tape Case: SO8 Turn-off time: 200ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 |
auf Bestellung 3376 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -250...120mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 750ns Power: 1W Kind of package: reel; tape Case: SO14 Turn-off time: 200ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 |
auf Bestellung 1049 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21094SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -250...120mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 750ns Power: 1W Kind of package: tube Case: SO14 Turn-off time: 200ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21084STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.35A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 48MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY8C27543-24AXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Clock frequency: 24MHz Case: TQFP44 Memory: 256B SRAM; 16kB FLASH Number of inputs/outputs: 40 Mounting: SMD Supply voltage: 3...5.25V DC Interface: I2C; SPI; UART Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4124AXI-443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXQ-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 48MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AZI-M443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 38 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF4104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Mounting: THT Power dissipation: 94W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 80A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.1mΩ |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF40H233XTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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AUIRF4104STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 68nC Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Kind of package: reel; tape Type of bridge rectifier: single-phase Max. forward impulse current: 5A Features of semiconductor devices: Schottky Max. off-state voltage: 30V Electrical mounting: SMT Load current: 0.9A |
auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 5A |
auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S29AL008J70TFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Operating voltage: 2.7...3.6V Case: TSSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: CFI; parallel |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TT215N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLE8366EVXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 81A Power dissipation: 71W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhancement Pulsed drain current: 360A Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 71W Case: DPAK; TO252 On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SPD50N03S207GBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1328 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD050N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 56W Case: DPAK; TO252 On-state resistance: 4.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 31nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 65W Case: TO220-3 On-state resistance: 4.95mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 72A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSZ050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS44273LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; SOT23-5 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; low-side Case: SOT23-5 Output current: -1.5...1.5A Power: 0.25W Number of channels: 1 Supply voltage: 9.2...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 50ns Turn-off time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IPF016N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7 Power dissipation: 300W Gate charge: 161nC Polarisation: unipolar Drain current: 274A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: D2PAK-7 On-state resistance: 1.6mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Pulsed drain current: 150A Power dissipation: 114W Polarisation: unipolar Technology: CoolSiC™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 45A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -7...23V Kind of package: tube Case: TO247-4 On-state resistance: 57mΩ |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2132SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 675ns Turn-off time: 475ns |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR2132JTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V Type of integrated circuit: driver Mounting: SMD Case: PLCC44 Operating temperature: -40...125°C Input voltage: 10...20V Output current: 0.2A Integrated circuit features: MOSFET Kind of integrated circuit: high-side; low-side Number of channels: 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR2132STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Operating temperature: -40...125°C Case: SO28-W Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Output current: -420...200mA Turn-off time: 475ns Turn-on time: 675ns Power: 1.6W Supply voltage: 10...20V DC Number of channels: 6 Voltage class: 600V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
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IRFS31N20DTRLP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 31A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFP4332PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 57A Power dissipation: 360W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFU4510PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Case: IPAK Mounting: THT Kind of channel: enhancement Power dissipation: 143W Technology: HEXFET® |
auf Bestellung 905 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21834STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IR2183STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AUIRG4PH50SXKMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 1375 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRS21864SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2118PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2181STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2109STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21864STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21814STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2101STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21271STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2183STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7205TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3683 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7105TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7101TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7104TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC858CE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2109STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Kind of package: reel; tape
Case: SO8
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
auf Bestellung 3376 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21094STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21094SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Kind of package: tube
Case: SO14
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -250...120mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Kind of package: tube
Case: SO14
Turn-off time: 200ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21084STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4245AXI-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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| CY8C4125AXI-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C27543-24AXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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Stück im Wert von UAH
| CY8C4124AXI-443 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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Stück im Wert von UAH
| CY8C4125AXI-473 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4125AXQ-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
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Stück im Wert von UAH
| CY8C4245AXI-473 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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Stück im Wert von UAH
| CY8C4245AZI-M443 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| IRF4104PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP041N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF40H233XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| AUIRF4104STRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS3007ARPPE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward impulse current: 5A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Electrical mounting: SMT
Load current: 0.9A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward impulse current: 5A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Electrical mounting: SMT
Load current: 0.9A
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS3005B02VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
| S29AL008J70TFI010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
| TT215N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE8366EVXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TT260N22KOFHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S404ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Pulsed drain current: 360A
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Pulsed drain current: 360A
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S4L04ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD50N03S207GBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD050N03LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD50N03S4L06ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 31nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 31nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC050N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ050N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP050N03LF2SAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC050N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ050N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS44273LTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -1.5...1.5A
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPF016N10NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Power dissipation: 300W
Gate charge: 161nC
Polarisation: unipolar
Drain current: 274A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Power dissipation: 300W
Gate charge: 161nC
Polarisation: unipolar
Drain current: 274A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMZ120R030M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -7...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 57mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -7...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 57mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2132SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2132JTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
Number of channels: 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2132STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS31N20DTRLP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFP4332PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFU4510PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21834STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2183STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRG4PH50SXKMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW40N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW40N120CS6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)