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CY15B102N-ZS60XM INFINEON TECHNOLOGIES Infineon-CY15B102N_2_Mbit_(128K_16)_Military_F-RAM-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd01904258c6 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
 Mindestbestellmenge: 270 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM16W08-SG FM16W08-SG INFINEON TECHNOLOGIES FM16W08-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; parallel 8bit; 8kx8bit; 2.7÷5.5VDC
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Memory: 64kb FRAM
Kind of interface: parallel
Memory organisation: 8kx8bit
Case: SO28
Interface: parallel 8bit
Kind of memory: FRAM
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
10+9.02 EUR
11+8.35 EUR
27+8.19 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS306NH6327XTSA1 BSS306NH6327XTSA1 INFINEON TECHNOLOGIES BSS306NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5151 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
219+0.39 EUR
334+0.25 EUR
397+0.21 EUR
491+0.18 EUR
556+0.15 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 152 Stücke
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES BSP296NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
155+0.55 EUR
184+0.46 EUR
194+0.44 EUR
203+0.42 EUR
500+0.39 EUR
Mindestbestellmenge: 122 Stücke
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BSS7728NH6327XTSA2 BSS7728NH6327XTSA2 INFINEON TECHNOLOGIES BSS7728NH6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
701+0.12 EUR
873+0.098 EUR
1005+0.084 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 2ED2109S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2106-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED21824S06JXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY15B102N-ZS60XM Infineon-CY15B102N_2_Mbit_(128K_16)_Military_F-RAM-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd01904258c6
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 270 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FM16W08-SG FM16W08-DTE.pdf
FM16W08-SG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; parallel 8bit; 8kx8bit; 2.7÷5.5VDC
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Memory: 64kb FRAM
Kind of interface: parallel
Memory organisation: 8kx8bit
Case: SO28
Interface: parallel 8bit
Kind of memory: FRAM
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.02 EUR
11+8.35 EUR
27+8.19 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS306NH6327XTSA1 BSS306NH6327XTSA1.pdf
BSS306NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5151 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
219+0.39 EUR
334+0.25 EUR
397+0.21 EUR
491+0.18 EUR
556+0.15 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6327XTSA1 BSP296NH6327XTSA1.pdf
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
155+0.55 EUR
184+0.46 EUR
194+0.44 EUR
203+0.42 EUR
500+0.39 EUR
Mindestbestellmenge: 122 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS7728NH6327XTSA2 BSS7728NH6327-DTE.pdf
BSS7728NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
701+0.12 EUR
873+0.098 EUR
1005+0.084 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 infineon-2ed2106-4-s06f-j-datasheet-en.pdf
2ED2109S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED21824S06JXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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