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IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IPS70R600CEAKMA2 Infineon Technologies Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a Description: CONSUMER
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TDK5100FHTMA1 TDK5100FHTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TX IC ASK 433-435MHZ 10TFSOP
Supplier Device Package: 10-TSSOP
Antenna Connector: Castellation
Current - Transmitting: 11.4mA
Applications: General Purpose
Power - Output: 6.9dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 125°C
Modulation or Protocol: ASK, FSK
Frequency: 433MHz ~ 435MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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2EDN7524GXTMA1 2EDN7524GXTMA1 Infineon Technologies infineon-2edn752x-2edn852x-ds--datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
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TLE7183FXUMA6 TLE7183FXUMA6 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
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TLE7183FXUMA7 TLE7183FXUMA7 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
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TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLE9842QXXUMA1 TLE9842QXXUMA1 Infineon Technologies Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c Description: IC EMBEDDED POWER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (36kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
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TLE9843QXXUMA1 TLE9843QXXUMA1 Infineon Technologies Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9844QXXUMA1 TLE9844QXXUMA1 Infineon Technologies Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE82452SAAUMA1 TLE82452SAAUMA1 Infineon Technologies TLE82452SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
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TLE82453SAAUMA1 TLE82453SAAUMA1 Infineon Technologies TLE82453SA_rev1.0_2013-03-21.pdf Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
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IPI50R140CPXKSA1 IPI50R140CPXKSA1 Infineon Technologies Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
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SPP20N60S5HKSA1 SPP20N60S5HKSA1 Infineon Technologies SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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IPT65R033G7XTMA1 IPT65R033G7XTMA1 Infineon Technologies Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
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IPT65R105G7XTMA1 IPT65R105G7XTMA1 Infineon Technologies Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23 Description: MOSFET N-CH 650V 24A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT65R195G7XTMA1 IPT65R195G7XTMA1 Infineon Technologies Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21 Description: MOSFET N-CH 650V 14A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPZ60R017C7XKSA1 IPZ60R017C7XKSA1 Infineon Technologies Infineon-IPZ60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc275c6b7da2 Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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BTS141BKSA1 BTS141BKSA1 Infineon Technologies Infineon-BTS141-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84e19f937577 Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 25mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
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BTS3050TFATMA1 BTS3050TFATMA1 Infineon Technologies Infineon-BTS3050TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a5186143f59 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V (Max)
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
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IKCM10B60GAXKMA1 Infineon Technologies IKCM10B60GA.pdf Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
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F475R07W1H3B11ABOMA1 F475R07W1H3B11ABOMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT MOD 650V 37.5A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37.5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
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FS215R04A1E3DBOMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULE
Packaging: Tray
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FS800R07A2E3B31BOSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULES
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TLE72092RAUMA4 Infineon Technologies Infineon-TLE7209_2R-DS-v01_05-en.pdf?fileId=db3a30431f848401011fc76ca8e77a06 Description: IC MOTOR DRIVER 5V-28V 20DSO
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-20-27
Voltage - Load: 5V ~ 28V
Technology: CMOS
Applications: General Purpose
Voltage - Supply: 5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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IRAM136-3023B2 Infineon Technologies iram136-3023b.pdf?fileId=5546d462533600a4015355d6b6251854 Description: POWER DRIVER MOD 150V 30A 22SIP
Voltage: 150 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Packaging: Tube
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IRAM538-1065A Infineon Technologies fundamentals-of-power-semiconductors Description: POWER DRIVER MOD 600V 10A LFRAME
Packaging: Tube
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
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ICB2FL02GXUMA2 ICB2FL02GXUMA2 Infineon Technologies ICB2FL02G.pdf Description: IC BALLAST CNTRL 120KHZ DSO-19
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TLE4250GNTSA1 TLE4250GNTSA1 Infineon Technologies TLE4250G.pdf Description: IC REG LIN POS ADJ 50MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
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TLE4263GXUMA2 TLE4263GXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
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TLE4269GLXUMA2 TLE4269GLXUMA2 Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LINEAR 5V 100MA PG-DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4275AKSA1 TLE4275AKSA1 Infineon Technologies Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t Description: IC REG LIN 5V 400MA TO220-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
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TLE4276DV50NTMA1 TLE4276DV50NTMA1 Infineon Technologies TLE4276_rev2.7_2007-10-23.pdf Description: IC REG LINEAR 5V 400MA TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
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TLS202B1MBV33HTMA1 TLS202B1MBV33HTMA1 Infineon Technologies Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220 Description: IC REG LINEAR 3.3V 150MA SCT595
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 63dB (10kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-SCT595-5-1
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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TLS805D1LDV50XUMA1 TLS805D1LDV50XUMA1 Infineon Technologies Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLS810A1LDV50XUMA1 TLS810A1LDV50XUMA1 Infineon Technologies Infineon-TLS810A1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed85164254 Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLS810B1LDV33XUMA1 TLS810B1LDV33XUMA1 Infineon Technologies Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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IPD50R520CPATMA1 Infineon Technologies Infineon-IPD50R520CP-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed1dc7e86130d Description: LOW POWER_LEGACY
Produkt ist nicht verfügbar
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SPD02N50C3BTMA1 SPD02N50C3BTMA1 Infineon Technologies Infineon-SPD02N50C3-DS-v02_05-en.pdf?fileId=db3a30432b16d655012b1aa3ea202dac Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
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SPD04N60C3ATMA1 SPD04N60C3ATMA1 Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SPP02N60C3XKSA1 SPP02N60C3XKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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SPP03N60C3XKSA1 SPP03N60C3XKSA1 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPP03N60S5XKSA1 SPP03N60S5XKSA1 Infineon Technologies SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPP07N60S5HKSA1 SPP07N60S5HKSA1 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: LOW POWER_LEGACY
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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SPP07N60S5XKSA1 SPP07N60S5XKSA1 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP07N65C3XKSA1 SPP07N65C3XKSA1 Infineon Technologies SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPP12N50C3XKSA1 SPP12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SPS02N60C3BKMA1 SPS02N60C3BKMA1 Infineon Technologies SPS02N60C3_rev2.3_2013-07-31.pdf Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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BSC020N03LSGATMA2 BSC020N03LSGATMA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: LV POWER MOS
Packaging: Tape & Reel (TR)
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IPD135N03LGBTMA1 IPD135N03LGBTMA1 Infineon Technologies IPDx135N03LG_rev1.04_2008-04-15.pdf Description: LV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPS031N03LGAKMA1 IPS031N03LGAKMA1 Infineon Technologies IP%28D%2CS%29031N03L_%20G.pdf Description: LV POWER MOS
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
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TLE75008EMDXUMA2 TLE75008EMDXUMA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 Infineon Technologies Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a Description: IC RF TXRX 16TSNP
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI45N06S4L08AKSA3 IPI45N06S4L08AKSA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
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IPB044N15N5ATMA1 IPB044N15N5ATMA1 Infineon Technologies Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757 Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
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IPB048N15N5ATMA1 IPB048N15N5ATMA1 Infineon Technologies Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463 Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
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1000+5.57 EUR
3000+5.5 EUR
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 Infineon Technologies Infineon-IPB073N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a031192a5475 Description: MOSFET N-CH 150V 114A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 57A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IPC218N04N3X7SA1 Infineon Technologies dgdl?folderId=5546d4624c9e0f0e014c9e8cf34415d2&fileId=db3a3043442f820901442fbc3e5b002d Description: MV POWER MOS
Produkt ist nicht verfügbar
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IPC300N20N3X7SA1 IPC300N20N3X7SA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MV POWER MOS
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IPS65R400CEAKMA1 Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98
IPS65R400CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPS70R600CEAKMA2 Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a
Hersteller: Infineon Technologies
Description: CONSUMER
Produkt ist nicht verfügbar
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TDK5100FHTMA1 Part_Number_Guide_Web.pdf
TDK5100FHTMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Supplier Device Package: 10-TSSOP
Antenna Connector: Castellation
Current - Transmitting: 11.4mA
Applications: General Purpose
Power - Output: 6.9dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 125°C
Modulation or Protocol: ASK, FSK
Frequency: 433MHz ~ 435MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7524GXTMA1 infineon-2edn752x-2edn852x-ds--datasheet-en.pdf
2EDN7524GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.04 EUR
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TLE7183FXUMA6 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA6
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Produkt ist nicht verfügbar
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TLE7183FXUMA7 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
TLE7183FXUMA7
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Produkt ist nicht verfügbar
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TLE98422QXXUMA1 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (40kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9842QXXUMA1 Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c
TLE9842QXXUMA1
Hersteller: Infineon Technologies
Description: IC EMBEDDED POWER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (36kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 2K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+4.59 EUR
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TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (52kB)
Voltage - Supply: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.81 EUR
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TLE9843QXXUMA1 Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d
TLE9843QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.76 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9844QXXUMA1 Infineon-TLE9844QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1c8a87505
TLE9844QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE82452SAAUMA1 TLE82452SA_rev1.0_2013-03-21.pdf
TLE82452SAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-36
Produkt ist nicht verfügbar
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TLE82453SAAUMA1 TLE82453SA_rev1.0_2013-03-21.pdf
TLE82453SAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Produkt ist nicht verfügbar
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IPI50R140CPXKSA1 Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a
IPI50R140CPXKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Produkt ist nicht verfügbar
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SPP20N60S5HKSA1 SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b
SPP20N60S5HKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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IPT65R033G7XTMA1 Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f
IPT65R033G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
Produkt ist nicht verfügbar
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IPT65R105G7XTMA1 Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23
IPT65R105G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT65R195G7XTMA1 Infineon-IPT65R195G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902292a4f21
IPT65R195G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPZ60R017C7XKSA1 Infineon-IPZ60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc275c6b7da2
IPZ60R017C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 109A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.63 EUR
30+22.98 EUR
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BTS141BKSA1 Infineon-BTS141-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84e19f937577
BTS141BKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V (Max)
Rds On (Typ): 25mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
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BTS3050TFATMA1 Infineon-BTS3050TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a5186143f59
BTS3050TFATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V (Max)
Input Type: Non-Inverting
Rds On (Typ): 44mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.26 EUR
5000+1.23 EUR
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IKCM10B60GAXKMA1 IKCM10B60GA.pdf
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Tube
Produkt ist nicht verfügbar
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F475R07W1H3B11ABOMA1 fundamentals-of-power-semiconductors
F475R07W1H3B11ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 37.5A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 37.5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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FS215R04A1E3DBOMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Produkt ist nicht verfügbar
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FS800R07A2E3B31BOSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULES
Produkt ist nicht verfügbar
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TLE72092RAUMA4 Infineon-TLE7209_2R-DS-v01_05-en.pdf?fileId=db3a30431f848401011fc76ca8e77a06
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5V-28V 20DSO
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-20-27
Voltage - Load: 5V ~ 28V
Technology: CMOS
Applications: General Purpose
Voltage - Supply: 5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRAM136-3023B2 iram136-3023b.pdf?fileId=5546d462533600a4015355d6b6251854
Hersteller: Infineon Technologies
Description: POWER DRIVER MOD 150V 30A 22SIP
Voltage: 150 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IRAM538-1065A fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: POWER DRIVER MOD 600V 10A LFRAME
Packaging: Tube
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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ICB2FL02GXUMA2 ICB2FL02G.pdf
ICB2FL02GXUMA2
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 120KHZ DSO-19
Produkt ist nicht verfügbar
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TLE4250GNTSA1 TLE4250G.pdf
TLE4250GNTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Produkt ist nicht verfügbar
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TLE4263GXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
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TLE4269GLXUMA2 Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GLXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE4275AKSA1 Infineon-TLE4275V50-DS-v01_07-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b437f96169d5&ack=t
TLE4275AKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO220-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4276DV50NTMA1 TLE4276_rev2.7_2007-10-23.pdf
TLE4276DV50NTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
Produkt ist nicht verfügbar
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TLS202B1MBV33HTMA1 Infineon-TLS202B1MBV33-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969dad1574220
TLS202B1MBV33HTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 63dB (10kHz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-SCT595-5-1
Number of Regulators: 1
Voltage - Input (Max): 18V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLS805D1LDV50XUMA1 Infineon-TLS805D1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed79984250
TLS805D1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 16 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.3V @ 50mA
PSRR: 55dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 11.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 50mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLS810A1LDV50XUMA1 Infineon-TLS810A1LDV50-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969ed85164254
TLS810A1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 100MA PG-TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 50 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.55V @ 100mA
PSRR: 55dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 7.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.18 EUR
Mindestbestellmenge: 5000 Stücke
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TLS810B1LDV33XUMA1 Infineon-TLS810B1xxV33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015921015a8b366e
TLS810B1LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA TSON-10
Qualification: AEC-Q100
Current - Supply (Max): 15 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.65V @ 100mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TSON-10
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 10 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 10-TFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.19 EUR
Mindestbestellmenge: 5000 Stücke
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IPD50R520CPATMA1 Infineon-IPD50R520CP-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed1dc7e86130d
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SPD02N50C3BTMA1 Infineon-SPD02N50C3-DS-v02_05-en.pdf?fileId=db3a30432b16d655012b1aa3ea202dac
SPD02N50C3BTMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
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SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
SPD04N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPP02N60C3XKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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SPP03N60C3XKSA1 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPP03N60S5XKSA1 SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b
SPP03N60S5XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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SPP07N60S5HKSA1 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N60S5HKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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SPP07N60S5XKSA1 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N60S5XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP07N65C3XKSA1 SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d
SPP07N65C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPP12N50C3XKSA1 SPx12N50C3.pdf
SPP12N50C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPS02N60C3BKMA1 SPS02N60C3_rev2.3_2013-07-31.pdf
SPS02N60C3BKMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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BSC020N03LSGATMA2 Part_Number_Guide_Web.pdf
BSC020N03LSGATMA2
Hersteller: Infineon Technologies
Description: LV POWER MOS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD135N03LGBTMA1 IPDx135N03LG_rev1.04_2008-04-15.pdf
IPD135N03LGBTMA1
Hersteller: Infineon Technologies
Description: LV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPS031N03LGAKMA1 IP%28D%2CS%29031N03L_%20G.pdf
IPS031N03LGAKMA1
Hersteller: Infineon Technologies
Description: LV POWER MOS
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
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TLE75008EMDXUMA2 Part_Number_Guide_Web.pdf
TLE75008EMDXUMA2
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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BGT24LTR11N16E6327XTSA1 Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a
BGT24LTR11N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF TXRX 16TSNP
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI45N06S4L08AKSA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPI45N06S4L08AKSA3
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
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IPB044N15N5ATMA1 Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757
IPB044N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.66 EUR
Mindestbestellmenge: 1000 Stücke
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IPB048N15N5ATMA1 Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463
IPB048N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.57 EUR
3000+5.5 EUR
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IPB073N15N5ATMA1 Infineon-IPB073N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a031192a5475
IPB073N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 114A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 57A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.8 EUR
Mindestbestellmenge: 1000 Stücke
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IPC218N04N3X7SA1 dgdl?folderId=5546d4624c9e0f0e014c9e8cf34415d2&fileId=db3a3043442f820901442fbc3e5b002d
Hersteller: Infineon Technologies
Description: MV POWER MOS
Produkt ist nicht verfügbar
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IPC300N20N3X7SA1 fundamentals-of-power-semiconductors
IPC300N20N3X7SA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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