Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149754) > Seite 277 nach 2496
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IPD50N06S4L12ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TO252-3-11 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V |
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SLB9660TT12FW440XUMA5 | Infineon Technologies |
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TLE42344GHTSA1 | Infineon Technologies |
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TLE4726GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 6.5V Applications: General Purpose Technology: Bipolar Voltage - Load: 5V ~ 50V Supplier Device Package: PG-DSO-24-13 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/4 |
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TLE82092SAAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 8.6A Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.4V ~ 5.25V Technology: Power MOSFET Voltage - Load: 4.5V ~ 28V Supplier Device Package: PG-DSO-20-65 Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo Grade: Automotive Part Status: Active |
auf Bestellung 1029 Stücke: Lieferzeit 10-14 Tag (e) |
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SLB9660TT12FW440XUMA5 | Infineon Technologies |
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CY7C1370KV25-200AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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CY7C1370KV25-200BZC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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CY7C1371KV33-100AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 8.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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CY7C1372KV25-167AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1372KV33-167AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1373KV33-133AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Part Status: Active Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1380KV33-167AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Part Status: Active Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1380KV33-167BZI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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CY7C1381KV33-100BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1381KV33-133AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1381KV33-133AXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1383KV33-133AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1386KV33-167AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
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MCETOOLV1 | Infineon Technologies |
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IRF60R217 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL60S216 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
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IRF60R217 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
auf Bestellung 4624 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL60S216 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
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PTFA092213FLV5R250XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 960MHz Power - Output: 200W Gain: 17.5dB Technology: LDMOS Supplier Device Package: H-34288-2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.85 A |
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PTFA092213FLV5XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 960MHz Power - Output: 200W Gain: 17.5dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.85 A |
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PTFA192001E1V4R250XTMA1 | Infineon Technologies |
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PTFA192001E1V4XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: H-36260-2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 50W Gain: 15.9dB Technology: LDMOS Supplier Device Package: H-36260-2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.8 A |
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PTFA212001F1V4R250XTMA1 | Infineon Technologies | Description: IC RF POWER TRANSISTOR |
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PTFA212001F1V4XWSA1 | Infineon Technologies | Description: IC RF POWER TRANSISTOR |
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PTFB082817FHV1R250XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
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PTFB082817FHV1S250XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
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PTFB082817FHV1XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 2-Flatpack, Fin Leads, Flanged Mounting Type: Surface Mount Frequency: 821MHz Power - Output: 60W Gain: 19.3dB Technology: LDMOS Supplier Device Package: H-34288-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 2.15 A |
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PTFB093608FVV2S250XTMA1 | Infineon Technologies | Description: IC FET RF LDMOS H-362620-2 |
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PTFB192557SHV1R250XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: H-34288G-4/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 60W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34288G-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 1.35 A |
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PTFB192557SHV1XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: H-34288G-4/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Power - Output: 60W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34288G-4/2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 1.35 A |
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PTFB193408SVV1R250XTMA1 | Infineon Technologies |
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PTFB193408SVV1XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: H-34275G-6/2 Mounting Type: Chassis Mount Frequency: 1.99GHz Configuration: Dual, Common Source Power - Output: 80W Gain: 19dB Technology: LDMOS Supplier Device Package: H-34275G-6/2 Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 2.65 A |
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PTFB260605ELV1R250XTMA1 | Infineon Technologies |
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PTFB260605ELV1XWSA1 | Infineon Technologies |
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PTFB262406EV1XWSA1 | Infineon Technologies | Description: IC FET RF LDMOS |
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PXAC261202FCV1R250XTMA1 | Infineon Technologies |
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PXAC261202FCV1S250XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: H-37248-4 Mounting Type: Chassis Mount Frequency: 2.61GHz Configuration: Dual, Common Source Power - Output: 28W Gain: 13.5dB Technology: LDMOS Supplier Device Package: H-37248-4 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 230 mA |
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PXAC261202FCV1XWSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: H-37248-4 Mounting Type: Chassis Mount Frequency: 2.61GHz Configuration: Dual, Common Source Power - Output: 28W Gain: 13.5dB Technology: LDMOS Supplier Device Package: H-37248-4 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 230 mA |
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BTS6480SFXUMA1 | Infineon Technologies |
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IGC18T120T8QX1SA1 | Infineon Technologies |
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IRG8CH37K10F | Infineon Technologies |
![]() Packaging: Bulk Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Discontinued at Digi-Key Voltage - Collector Emitter Breakdown (Max): 1200 V |
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IRG8CH97K10F | Infineon Technologies |
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SIGC158T120R3LEX1SA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Supplier Device Package: Die IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 450 A |
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IRG7CH28UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
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IRG7CH28UEF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A Supplier Device Package: Die Td (on/off) @ 25°C: 35ns/225ns Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 60 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200 V |
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IRG7CH35UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
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IRG7CH35UEF | Infineon Technologies |
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IRG7CH42UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
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IRG7CH42UEF | Infineon Technologies |
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IRG7CH46UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
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IRG7CH46UEF | Infineon Technologies |
![]() Packaging: Bulk Part Status: Obsolete |
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IRG7CH50UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
Produkt ist nicht verfügbar |
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IRG7CH50UEF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
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IRG7CH54K10EF-R | Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPD50N06S4L12ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Produkt ist nicht verfügbar
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SLB9660TT12FW440XUMA5 |
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Hersteller: Infineon Technologies
Description: IC TPM 28TSSOP
Description: IC TPM 28TSSOP
Produkt ist nicht verfügbar
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TLE42344GHTSA1 |
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Hersteller: Infineon Technologies
Description: IC REG LDO 5V 0.1A SOT223-4
Description: IC REG LDO 5V 0.1A SOT223-4
Produkt ist nicht verfügbar
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TLE4726GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TLE82092SAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Grade: Automotive
Part Status: Active
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Grade: Automotive
Part Status: Active
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.24 EUR |
10+ | 7.08 EUR |
25+ | 6.55 EUR |
100+ | 5.95 EUR |
250+ | 5.67 EUR |
SLB9660TT12FW440XUMA5 |
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Hersteller: Infineon Technologies
Description: IC TPM 28TSSOP
Description: IC TPM 28TSSOP
Produkt ist nicht verfügbar
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CY7C1370KV25-200AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1371KV33-100AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1372KV25-167AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1372KV33-167AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1373KV33-133AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 53.52 EUR |
10+ | 49.50 EUR |
25+ | 47.91 EUR |
CY7C1380KV33-167AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 65.67 EUR |
10+ | 60.70 EUR |
25+ | 58.73 EUR |
72+ | 56.50 EUR |
144+ | 55.07 EUR |
288+ | 53.67 EUR |
CY7C1380KV33-167BZI |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1381KV33-100BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 44.58 EUR |
10+ | 39.56 EUR |
25+ | 38.11 EUR |
CY7C1381KV33-133AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 53.03 EUR |
10+ | 49.87 EUR |
25+ | 48.14 EUR |
72+ | 46.62 EUR |
144+ | 41.03 EUR |
CY7C1381KV33-133AXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 53.52 EUR |
10+ | 49.50 EUR |
25+ | 47.91 EUR |
72+ | 46.10 EUR |
144+ | 44.94 EUR |
288+ | 43.79 EUR |
CY7C1383KV33-133AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1386KV33-167AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCETOOLV1 |
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Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT FOR 100-SERIES,
Description: DEVELOPMENT KIT FOR 100-SERIES,
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF60R217 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.74 EUR |
IRL60S216 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF60R217 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4624 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.39 EUR |
11+ | 1.63 EUR |
100+ | 1.14 EUR |
500+ | 0.98 EUR |
1000+ | 0.91 EUR |
IRL60S216 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFA092213FLV5R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFA092213FLV5XWSA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFA192001E1V4R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFA192001E1V4XWSA1 |
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Hersteller: Infineon Technologies
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFA212001F1V4R250XTMA1 |
Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
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Stück im Wert von UAH
PTFA212001F1V4XWSA1 |
Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB082817FHV1R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB082817FHV1S250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB082817FHV1XWSA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB093608FVV2S250XTMA1 |
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-362620-2
Description: IC FET RF LDMOS H-362620-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB192557SHV1R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB192557SHV1XWSA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB193408SVV1R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Description: IC FET RF LDMOS H-34275G-6/2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB193408SVV1XWSA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB260605ELV1R250XTMA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB260605ELV1XWSA1 |
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Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PTFB262406EV1XWSA1 |
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAC261202FCV1R250XTMA1 |
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Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Description: FET RF 2CH 65V 2.61GHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAC261202FCV1S250XTMA1 |
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Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAC261202FCV1XWSA1 |
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Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS6480SFXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IGC18T120T8QX1SA1 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 15A DIE
Description: IGBT 1200V 15A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG8CH37K10F |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG8CH97K10F |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 100A DIE
Description: IGBT 1200V 100A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIGC158T120R3LEX1SA2 |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH28UED |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH28UEF |
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Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH35UED |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH35UEF |
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Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH42UED |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH42UEF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH46UED |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH46UEF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH50UED |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH50UEF |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG7CH54K10EF-R |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH