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IPD50N06S4L12ATMA1 IPD50N06S4L12ATMA1 Infineon Technologies Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0 Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Produkt ist nicht verfügbar
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SLB9660TT12FW440XUMA5 Infineon Technologies Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d Description: IC TPM 28TSSOP
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TLE42344GHTSA1 TLE42344GHTSA1 Infineon Technologies Infineon-TLE42344-DS-v01_00-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a3043271faefd012775d687c115be&ack=t Description: IC REG LDO 5V 0.1A SOT223-4
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TLE4726GXUMA1 TLE4726GXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
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TLE82092SAAUMA1 TLE82092SAAUMA1 Infineon Technologies Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Grade: Automotive
Part Status: Active
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SLB9660TT12FW440XUMA5 Infineon Technologies Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d Description: IC TPM 28TSSOP
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CY7C1370KV25-200AXC CY7C1370KV25-200AXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV25-200BZC CY7C1370KV25-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1371KV33-100AXC CY7C1371KV33-100AXC Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1372KV25-167AXC CY7C1372KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1372KV33-167AXC CY7C1372KV33-167AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1373KV33-133AXI CY7C1373KV33-133AXI Infineon Technologies Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1380KV33-167AXI CY7C1380KV33-167AXI Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1380KV33-167BZI CY7C1380KV33-167BZI Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-100BZXI CY7C1381KV33-100BZXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-133AXC CY7C1381KV33-133AXC Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-133AXI CY7C1381KV33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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72+46.10 EUR
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CY7C1383KV33-133AXC CY7C1383KV33-133AXC Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1386KV33-167AXC CY7C1386KV33-167AXC Infineon Technologies Infineon-CY7C1386KV33_CY7C1387KV33_18-Mbit_(512_K_36_1_M_18)_Pipelined_DCD_Sync_SRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed9ec015b8b Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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MCETOOLV1 MCETOOLV1 Infineon Technologies MCETOOLV1.pdf Description: DEVELOPMENT KIT FOR 100-SERIES,
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IRF60R217 IRF60R217 Infineon Technologies irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
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IRL60S216 IRL60S216 Infineon Technologies irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
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IRF60R217 IRF60R217 Infineon Technologies irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
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500+0.98 EUR
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IRL60S216 IRL60S216 Infineon Technologies irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Produkt ist nicht verfügbar
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PTFA092213FLV5R250XTMA1 PTFA092213FLV5R250XTMA1 Infineon Technologies PTFA092213EL_FL.pdf Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
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PTFA092213FLV5XWSA1 Infineon Technologies PTFA092213EL_FL.pdf Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
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PTFA192001E1V4R250XTMA1 PTFA192001E1V4R250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC RF POWER TRANSISTOR
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PTFA192001E1V4XWSA1 PTFA192001E1V4XWSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
Produkt ist nicht verfügbar
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PTFA212001F1V4R250XTMA1 Infineon Technologies Description: IC RF POWER TRANSISTOR
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PTFA212001F1V4XWSA1 Infineon Technologies Description: IC RF POWER TRANSISTOR
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PTFB082817FHV1R250XTMA1 Infineon Technologies PTFB082817FH.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB082817FHV1S250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB082817FHV1XWSA1 Infineon Technologies PTFB082817FH.pdf Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB093608FVV2S250XTMA1 Infineon Technologies Description: IC FET RF LDMOS H-362620-2
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PTFB192557SHV1R250XTMA1 Infineon Technologies PTFB192557SH.pdf Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
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PTFB192557SHV1XWSA1 Infineon Technologies PTFB192557SH.pdf Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
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PTFB193408SVV1R250XTMA1 Infineon Technologies PTFB193408SV.pdf Description: IC FET RF LDMOS H-34275G-6/2
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PTFB193408SVV1XWSA1 Infineon Technologies PTFB193408SV.pdf Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
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PTFB260605ELV1R250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS
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PTFB260605ELV1XWSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC FET RF LDMOS
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PTFB262406EV1XWSA1 Infineon Technologies Description: IC FET RF LDMOS
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PXAC261202FCV1R250XTMA1 Infineon Technologies PXAC261202FC.pdf Description: FET RF 2CH 65V 2.61GHZ
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PXAC261202FCV1S250XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
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PXAC261202FCV1XWSA1 Infineon Technologies PXAC261202FC.pdf Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Produkt ist nicht verfügbar
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BTS6480SFXUMA1 BTS6480SFXUMA1 Infineon Technologies Automotive_Power_SG_2016.pdf?fileId=5546d46153f64e7201542916c9830c71 Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
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IGC18T120T8QX1SA1 Infineon Technologies Infineon-IGC18T120T8Q-DS-v02_00-EN.pdf?fileId=db3a30433c1a8752013c28e31c372a25 Description: IGBT 1200V 15A DIE
Produkt ist nicht verfügbar
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IRG8CH37K10F Infineon Technologies irg8ch37k10f.pdf Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IRG8CH97K10F Infineon Technologies irg8ch97k10f.pdf Description: IGBT 1200V 100A DIE
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SIGC158T120R3LEX1SA2 SIGC158T120R3LEX1SA2 Infineon Technologies SIGC158T120R3LE_L7698N_U_F_neues_Gate.pdf?fileId=5546d46147a9c2e40147e8b94eee0493 Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
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IRG7CH28UED Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH28UEF Infineon Technologies irg7ch28uef.pdf Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IRG7CH35UED Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH35UEF Infineon Technologies irg7ch35uef.pdf Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH42UED Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH42UEF Infineon Technologies irg7ch42uef.pdf Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH46UED Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH46UEF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
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IRG7CH50UED Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH50UEF Infineon Technologies Description: IGBT 1200V ULTRA FAST DIE
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IRG7CH54K10EF-R Infineon Technologies irg7ch54k10ef.pdf Description: IGBT 1200V ULTRA FAST DIE
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IPD50N06S4L12ATMA1 Infineon-IPD50N06S4L_12-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203885cc580ca0
IPD50N06S4L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Produkt ist nicht verfügbar
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SLB9660TT12FW440XUMA5 Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d
Hersteller: Infineon Technologies
Description: IC TPM 28TSSOP
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TLE42344GHTSA1 Infineon-TLE42344-DS-v01_00-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a3043271faefd012775d687c115be&ack=t
TLE42344GHTSA1
Hersteller: Infineon Technologies
Description: IC REG LDO 5V 0.1A SOT223-4
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TLE4726GXUMA1 Part_Number_Guide_Web.pdf
TLE4726GXUMA1
Hersteller: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-13
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
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TLE82092SAAUMA1 Infineon-TLE8209-2SA-DS-v01_02-EN.pdf?fileId=5546d4624a0bf290014a0f5818836a1e
TLE82092SAAUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
Grade: Automotive
Part Status: Active
auf Bestellung 1029 Stücke:
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Anzahl Preis
2+9.24 EUR
10+7.08 EUR
25+6.55 EUR
100+5.95 EUR
250+5.67 EUR
Mindestbestellmenge: 2
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SLB9660TT12FW440XUMA5 Infineon-TPM+SLB+9660-DS-v12_14-EN.pdf?fileId=5546d4625185e0e201518b83ca013d6d
Hersteller: Infineon Technologies
Description: IC TPM 28TSSOP
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CY7C1370KV25-200AXC download
CY7C1370KV25-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370KV25-200BZC download
CY7C1370KV25-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1371KV33-100AXC Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1371KV33-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1372KV25-167AXC download
CY7C1372KV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1372KV33-167AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1372KV33-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1373KV33-133AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
CY7C1373KV33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 71 Stücke:
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1+53.52 EUR
10+49.50 EUR
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CY7C1380KV33-167AXI download
CY7C1380KV33-167AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 303 Stücke:
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Anzahl Preis
1+65.67 EUR
10+60.70 EUR
25+58.73 EUR
72+56.50 EUR
144+55.07 EUR
288+53.67 EUR
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CY7C1380KV33-167BZI download
CY7C1380KV33-167BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1381KV33-100BZXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-100BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 272 Stücke:
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Anzahl Preis
1+44.58 EUR
10+39.56 EUR
25+38.11 EUR
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CY7C1381KV33-133AXC Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.03 EUR
10+49.87 EUR
25+48.14 EUR
72+46.62 EUR
144+41.03 EUR
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CY7C1381KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KV33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.52 EUR
10+49.50 EUR
25+47.91 EUR
72+46.10 EUR
144+44.94 EUR
288+43.79 EUR
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CY7C1383KV33-133AXC Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1383KV33-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1386KV33-167AXC Infineon-CY7C1386KV33_CY7C1387KV33_18-Mbit_(512_K_36_1_M_18)_Pipelined_DCD_Sync_SRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed9ec015b8b
CY7C1386KV33-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCETOOLV1 MCETOOLV1.pdf
MCETOOLV1
Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT FOR 100-SERIES,
Produkt ist nicht verfügbar
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IRF60R217 irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc
IRF60R217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.74 EUR
Mindestbestellmenge: 2000
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IRL60S216 irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570
IRL60S216
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Produkt ist nicht verfügbar
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IRF60R217 irf60r217.pdf?fileId=5546d462533600a4015355e43be619cc
IRF60R217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 58A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.63 EUR
100+1.14 EUR
500+0.98 EUR
1000+0.91 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRL60S216 irl60s216.pdf?fileId=5546d462533600a40153565fdf5b2570
IRL60S216
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V
Produkt ist nicht verfügbar
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PTFA092213FLV5R250XTMA1 PTFA092213EL_FL.pdf
PTFA092213FLV5R250XTMA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288-6
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
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PTFA092213FLV5XWSA1 PTFA092213EL_FL.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288-4/2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 960MHz
Power - Output: 200W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.85 A
Produkt ist nicht verfügbar
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PTFA192001E1V4R250XTMA1 Part_Number_Guide_Web.pdf
PTFA192001E1V4R250XTMA1
Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
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PTFA192001E1V4XWSA1 Part_Number_Guide_Web.pdf
PTFA192001E1V4XWSA1
Hersteller: Infineon Technologies
Description: FET RF 65V 1.99GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 50W
Gain: 15.9dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.8 A
Produkt ist nicht verfügbar
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PTFA212001F1V4R250XTMA1
Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
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PTFA212001F1V4XWSA1
Hersteller: Infineon Technologies
Description: IC RF POWER TRANSISTOR
Produkt ist nicht verfügbar
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PTFB082817FHV1R250XTMA1 PTFB082817FH.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB082817FHV1S250XTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB082817FHV1XWSA1 PTFB082817FH.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 821MHz
Power - Output: 60W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 2.15 A
Produkt ist nicht verfügbar
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PTFB093608FVV2S250XTMA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-362620-2
Produkt ist nicht verfügbar
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PTFB192557SHV1R250XTMA1 PTFB192557SH.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tape & Reel (TR)
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
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PTFB192557SHV1XWSA1 PTFB192557SH.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34288G-4/2
Packaging: Tray
Package / Case: H-34288G-4/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Power - Output: 60W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34288G-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.35 A
Produkt ist nicht verfügbar
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PTFB193408SVV1R250XTMA1 PTFB193408SV.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Produkt ist nicht verfügbar
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PTFB193408SVV1XWSA1 PTFB193408SV.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS H-34275G-6/2
Packaging: Tray
Package / Case: H-34275G-6/2
Mounting Type: Chassis Mount
Frequency: 1.99GHz
Configuration: Dual, Common Source
Power - Output: 80W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-34275G-6/2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 2.65 A
Produkt ist nicht verfügbar
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PTFB260605ELV1R250XTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
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PTFB260605ELV1XWSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
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PTFB262406EV1XWSA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
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PXAC261202FCV1R250XTMA1 PXAC261202FC.pdf
Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Produkt ist nicht verfügbar
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PXAC261202FCV1S250XTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tape & Reel (TR)
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Produkt ist nicht verfügbar
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PXAC261202FCV1XWSA1 PXAC261202FC.pdf
Hersteller: Infineon Technologies
Description: FET RF 2CH 65V 2.61GHZ
Packaging: Tray
Package / Case: H-37248-4
Mounting Type: Chassis Mount
Frequency: 2.61GHz
Configuration: Dual, Common Source
Power - Output: 28W
Gain: 13.5dB
Technology: LDMOS
Supplier Device Package: H-37248-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 230 mA
Produkt ist nicht verfügbar
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BTS6480SFXUMA1 Automotive_Power_SG_2016.pdf?fileId=5546d46153f64e7201542916c9830c71
BTS6480SFXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 3:4 DSO-36
Produkt ist nicht verfügbar
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IGC18T120T8QX1SA1 Infineon-IGC18T120T8Q-DS-v02_00-EN.pdf?fileId=db3a30433c1a8752013c28e31c372a25
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A DIE
Produkt ist nicht verfügbar
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IRG8CH37K10F irg8ch37k10f.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V 100A DIE
Packaging: Bulk
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Td (on/off) @ 25°C: 35ns/190ns
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Discontinued at Digi-Key
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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IRG8CH97K10F irg8ch97k10f.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V 100A DIE
Produkt ist nicht verfügbar
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SIGC158T120R3LEX1SA2 SIGC158T120R3LE_L7698N_U_F_neues_Gate.pdf?fileId=5546d46147a9c2e40147e8b94eee0493
SIGC158T120R3LEX1SA2
Hersteller: Infineon Technologies
Description: IGBT 1200V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 450 A
Produkt ist nicht verfügbar
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IRG7CH28UED
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH28UEF irg7ch28uef.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Supplier Device Package: Die
Td (on/off) @ 25°C: 35ns/225ns
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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IRG7CH35UED
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH35UEF irg7ch35uef.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH42UED
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH42UEF irg7ch42uef.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH46UED
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH46UEF Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRG7CH50UED
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH50UEF
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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IRG7CH54K10EF-R irg7ch54k10ef.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Produkt ist nicht verfügbar
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