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1EDI40I12AHXUMA1 1EDI40I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI60H12AHXUMA1 1EDI60H12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.14 EUR
Mindestbestellmenge: 1000
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1EDI60I12AHXUMA1 1EDI60I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.43 EUR
Mindestbestellmenge: 1000
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IKD04N60RFATMA1 IKD04N60RFATMA1 Infineon Technologies Infineon-IKD04N60RF-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d6c806d00dc Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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AUIRF7309QTR AUIRF7309QTR Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BB55502VH7912XTSA1 BB55502VH7912XTSA1 Infineon Technologies BB535,BB555_Series.pdf Description: DIODE VAR CAP 30V 20MA SC79
Produkt ist nicht verfügbar
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BFP740FESDH6327XTSA1 BFP740FESDH6327XTSA1 Infineon Technologies Infineon-BFP740FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638969e2f4ead Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
Mindestbestellmenge: 28
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BGA7H1N6E6327XTSA1 BGA7H1N6E6327XTSA1 Infineon Technologies Infineon-BGA7H1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e45ad9af02ca Description: IC AMP LTE 2.3GHZ-2.69GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 12.5dB
Current - Supply: 4.7mA
Noise Figure: 0.6dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 15500 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
12+1.52 EUR
25+1.37 EUR
100+1.2 EUR
250+1.05 EUR
500+0.93 EUR
1000+0.74 EUR
5000+0.65 EUR
Mindestbestellmenge: 11
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BGA7L1N6E6327XTSA1 BGA7L1N6E6327XTSA1 Infineon Technologies Infineon-BGA7L1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46b396d02e6 Description: IC AMP LTE 728MHZ-960MHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 728MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13.3dB
Current - Supply: 4.4mA
Noise Figure: 0.9dB
P1dB: -10dBm
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 BSC034N06NSATMA1 Infineon Technologies Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 9638 Stücke:
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11+1.71 EUR
13+1.37 EUR
Mindestbestellmenge: 11
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BSC040N08NS5ATMA1 BSC040N08NS5ATMA1 Infineon Technologies Infineon-BSC040N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3065a7e2a05 Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
auf Bestellung 8064 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.08 EUR
10+2.64 EUR
100+1.82 EUR
500+1.48 EUR
Mindestbestellmenge: 5
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BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 Infineon Technologies Infineon-BSC098N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae95ab4221bfd Description: MOSFET N-CH 100V 60A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+1.77 EUR
100+1.19 EUR
500+0.95 EUR
Mindestbestellmenge: 7
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 Infineon Technologies Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414 Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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BSR315PH6327XTSA1 BSR315PH6327XTSA1 Infineon Technologies Infineon-BSR315P-DS-v01_06-EN.pdf?fileId=db3a304412b407950112b42acc6143f0 Description: MOSFET P-CH 60V 620MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 620mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 176 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8307 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
25+0.72 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 Infineon Technologies Infineon-BSR316P-DS-v01_07-EN.pdf?fileId=db3a304412b407950112b42ae2bb4410 Description: MOSFET P-CH 100V 360MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 170µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8879 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
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BSR92PH6327XTSA1 BSR92PH6327XTSA1 Infineon Technologies Infineon-BSR92P-DataSheet-v01_06-EN.pdf?fileId=db3a304412b407950112b42ac3aa43e1 Description: MOSFET P-CH 250V 140MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
27+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 Infineon Technologies Infineon-BSS606N-DS-v02_02-en.pdf?fileId=db3a30433dfcb54c013dfd4f43ed0120 Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18550 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
Mindestbestellmenge: 18
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 Infineon Technologies Infineon-BSZ068N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c918e60710e Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
11+1.67 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 7
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BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 11153 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
16+1.14 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.59 EUR
2000+0.56 EUR
Mindestbestellmenge: 10
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 Infineon Technologies Infineon-BSZ110N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd70d7261fe Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 36441 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.74 EUR
Mindestbestellmenge: 8
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BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 Infineon Technologies BSZ180P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304324fc7f9a0124fdf6df190050 Description: MOSFET P-CH 30V 9A/39.5A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
20+0.88 EUR
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BTS3028SDLATMA1 BTS3028SDLATMA1 Infineon Technologies Infineon-BTS3028SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad9d497d4c29 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 1031 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.89 EUR
10+2.9 EUR
25+2.65 EUR
100+2.37 EUR
250+2.24 EUR
500+2.16 EUR
1000+2.1 EUR
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BTS50081EKBXUMA1 BTS50081EKBXUMA1 Infineon Technologies Infineon-BTS5008-1EKB-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a85189c1a7779 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
auf Bestellung 2657 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+3.02 EUR
25+2.76 EUR
100+2.47 EUR
250+2.34 EUR
500+2.26 EUR
1000+2.19 EUR
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BTS50101EKBXUMA1 BTS50101EKBXUMA1 Infineon Technologies Infineon-BTS5010-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c62c7113e Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3016 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.87 EUR
10+2.88 EUR
25+2.64 EUR
100+2.36 EUR
250+2.23 EUR
500+2.15 EUR
1000+2.09 EUR
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BTS50121EKBXUMA1 BTS50121EKBXUMA1 Infineon Technologies Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3428 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
10+2.66 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.98 EUR
1000+1.92 EUR
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BTS50161EKBXUMA1 BTS50161EKBXUMA1 Infineon Technologies Infineon-BTS5016-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa41a7a3d1131 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS50302EKAXUMA1 BTS50302EKAXUMA1 Infineon Technologies Infineon-BTS5030-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41a4f9f1125 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.8 EUR
25+2.56 EUR
100+2.29 EUR
250+2.17 EUR
500+2.09 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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BTS50902EKAXUMA1 BTS50902EKAXUMA1 Infineon Technologies Infineon-BTS5090-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41130771071 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+2.17 EUR
25+1.98 EUR
100+1.76 EUR
250+1.66 EUR
Mindestbestellmenge: 6
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BTS51202EKAXUMA1 BTS51202EKAXUMA1 Infineon Technologies Infineon-BTS5120-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41121fc106d Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5665 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
10+2.03 EUR
25+1.85 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
Mindestbestellmenge: 7
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IDM02G120C5XTMA1 IDM02G120C5XTMA1 Infineon Technologies Infineon-IDM02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c3fa614236 Description: DIODE SIL CARB 1200V 2A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 30996 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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IDM05G120C5XTMA1 IDM05G120C5XTMA1 Infineon Technologies Infineon-IDM05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef201501340f8f84748 Description: DIODE SIL CARB 1200V 5A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
4+5 EUR
10+3.26 EUR
100+2.26 EUR
Mindestbestellmenge: 4
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IDM08G120C5XTMA1 IDM08G120C5XTMA1 Infineon Technologies Infineon-IDM08G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c4028b4239 Description: DIODE SIL CARB 1200V 8A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.44 EUR
10+3.55 EUR
100+2.48 EUR
500+2.17 EUR
Mindestbestellmenge: 4
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IDM10G120C5XTMA1 IDM10G120C5XTMA1 Infineon Technologies Infineon-IDM10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c40a77423d Description: DIODE SIC 1.2KV 38A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 29pF @ 800V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 12 V
auf Bestellung 7409 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.72 EUR
10+4.43 EUR
100+3.14 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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IFX1763XEJV50XUMA1 IFX1763XEJV50XUMA1 Infineon Technologies INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 5V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV33XUMA1 IFX54441EJV33XUMA1 Infineon Technologies INFN-S-A0000606214-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX81481ELVXUMA1 IFX81481ELVXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC REG CTRLR BUCK 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Infineon Technologies Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4992 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
12+1.59 EUR
Mindestbestellmenge: 9
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 Infineon Technologies IPx100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
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IPB120N04S401ATMA1 IPB120N04S401ATMA1 Infineon Technologies Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1811 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.47 EUR
10+3.57 EUR
100+2.49 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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IPB120N04S402ATMA1 IPB120N04S402ATMA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1601 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
10+3.22 EUR
100+2.24 EUR
500+1.91 EUR
Mindestbestellmenge: 4
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IPB160N04S203ATMA4 IPB160N04S203ATMA4 Infineon Technologies Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180N04S400ATMA1 IPB180N04S400ATMA1 Infineon Technologies Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.99 EUR
10+4.62 EUR
100+3.28 EUR
500+3.06 EUR
Mindestbestellmenge: 3
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IPB180N04S401ATMA1 IPB180N04S401ATMA1 Infineon Technologies Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 948 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.76 EUR
10+3.76 EUR
100+2.63 EUR
500+2.14 EUR
Mindestbestellmenge: 4
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IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 Infineon Technologies Infineon-IPB180N04S4_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c4975375d77&ack=t Description: MOSFET N-CH 40V 180A TO263-7-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
10+3.74 EUR
100+2.94 EUR
500+2.41 EUR
Mindestbestellmenge: 4
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IPB80N04S403ATMA1 IPB80N04S403ATMA1 Infineon Technologies Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
10+2.53 EUR
100+1.73 EUR
500+1.39 EUR
Mindestbestellmenge: 5
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IPB80N04S404ATMA1 IPB80N04S404ATMA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
Mindestbestellmenge: 5
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IPB80N06S209ATMA2 IPB80N06S209ATMA2 Infineon Technologies INFNS09526-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.8 EUR
10+3.12 EUR
100+2.17 EUR
500+1.84 EUR
Mindestbestellmenge: 4
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IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA2 Infineon Technologies Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N06S2L06ATMA2 IPB80N06S2L06ATMA2 Infineon Technologies IPx80N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
10+3.79 EUR
100+2.66 EUR
500+2.37 EUR
Mindestbestellmenge: 4
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IPD096N08N3GATMA1 IPD096N08N3GATMA1 Infineon Technologies Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+1.79 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
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IPD100N04S402ATMA1 IPD100N04S402ATMA1 Infineon Technologies Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Description: MOSFET N-CH 40V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2916 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N08N3GATMA1 IPD135N08N3GATMA1 Infineon Technologies Infineon-IPD135N08N3-DS-v02_02-en.pdf?fileId=db3a30431add1d95011ae8b1143256d4 Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
auf Bestellung 10519 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
14+1.34 EUR
100+0.99 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 8
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IPD26N06S2L35ATMA2 IPD26N06S2L35ATMA2 Infineon Technologies Infineon-IPD26N06S2L_35-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43351ff5b22&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N03S2L20ATMA1 IPD30N03S2L20ATMA1 Infineon Technologies Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
12+1.6 EUR
100+1.07 EUR
Mindestbestellmenge: 7
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IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 Infineon Technologies Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15276 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 Infineon Technologies IPD350N06L+G++Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c320778777982 Description: MOSFET N-CH 60V 29A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N03S2L06ATMA1 IPD50N03S2L06ATMA1 Infineon Technologies Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4442 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies INFNS15258-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2578 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
15+1.19 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
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IPD50N04S4L08ATMA1 IPD50N04S4L08ATMA1 Infineon Technologies Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 17µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12175 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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IPD70P04P409ATMA1 IPD70P04P409ATMA1 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1EDI40I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI40I12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
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1EDI60H12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI60H12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.14 EUR
Mindestbestellmenge: 1000
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1EDI60I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI60I12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.43 EUR
Mindestbestellmenge: 1000
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IKD04N60RFATMA1 Infineon-IKD04N60RF-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d6c806d00dc
IKD04N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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AUIRF7309QTR auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BB55502VH7912XTSA1 BB535,BB555_Series.pdf
BB55502VH7912XTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Produkt ist nicht verfügbar
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BFP740FESDH6327XTSA1 Infineon-BFP740FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638969e2f4ead
BFP740FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
Mindestbestellmenge: 28
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BGA7H1N6E6327XTSA1 Infineon-BGA7H1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e45ad9af02ca
BGA7H1N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.69GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 12.5dB
Current - Supply: 4.7mA
Noise Figure: 0.6dB
P1dB: -8dBm
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 15500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
12+1.52 EUR
25+1.37 EUR
100+1.2 EUR
250+1.05 EUR
500+0.93 EUR
1000+0.74 EUR
5000+0.65 EUR
Mindestbestellmenge: 11
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BGA7L1N6E6327XTSA1 Infineon-BGA7L1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46b396d02e6
BGA7L1N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 728MHZ-960MHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 728MHz ~ 960MHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13.3dB
Current - Supply: 4.4mA
Noise Figure: 0.9dB
P1dB: -10dBm
Supplier Device Package: PG-TSNP-6-2
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 Infineon-BSC034N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c65286a70be
BSC034N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 41µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 9638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
13+1.37 EUR
Mindestbestellmenge: 11
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BSC040N08NS5ATMA1 Infineon-BSC040N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3065a7e2a05
BSC040N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 67µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
auf Bestellung 8064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.64 EUR
100+1.82 EUR
500+1.48 EUR
Mindestbestellmenge: 5
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BSC098N10NS5ATMA1 Infineon-BSC098N10NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae95ab4221bfd
BSC098N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 60A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.77 EUR
100+1.19 EUR
500+0.95 EUR
Mindestbestellmenge: 7
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BSL211SPH6327XTSA1 Infineon-BSL211SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142db9dab0e1414
BSL211SPH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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BSR315PH6327XTSA1 Infineon-BSR315P-DS-v01_06-EN.pdf?fileId=db3a304412b407950112b42acc6143f0
BSR315PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 620MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 620mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 176 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.72 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
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BSR316PH6327XTSA1 Infineon-BSR316P-DS-v01_07-EN.pdf?fileId=db3a304412b407950112b42ae2bb4410
BSR316PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 360MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 170µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
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BSR92PH6327XTSA1 Infineon-BSR92P-DataSheet-v01_06-EN.pdf?fileId=db3a304412b407950112b42ac3aa43e1
BSR92PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 140MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
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BSS606NH6327XTSA1 Infineon-BSS606N-DS-v02_02-en.pdf?fileId=db3a30433dfcb54c013dfd4f43ed0120
BSS606NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 3.2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
Mindestbestellmenge: 18
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BSZ068N06NSATMA1 Infineon-BSZ068N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c918e60710e
BSZ068N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.67 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 7
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BSZ100N06NSATMA1 Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 11153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.14 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.59 EUR
2000+0.56 EUR
Mindestbestellmenge: 10
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BSZ110N08NS5ATMA1 Infineon-BSZ110N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd70d7261fe
BSZ110N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 36441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.74 EUR
Mindestbestellmenge: 8
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BSZ180P03NS3EGATMA1 BSZ180P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304324fc7f9a0124fdf6df190050
BSZ180P03NS3EGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.5A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.5A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.88 EUR
Mindestbestellmenge: 14
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BTS3028SDLATMA1 Infineon-BTS3028SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad9d497d4c29
BTS3028SDLATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 1031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.9 EUR
25+2.65 EUR
100+2.37 EUR
250+2.24 EUR
500+2.16 EUR
1000+2.1 EUR
Mindestbestellmenge: 5
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BTS50081EKBXUMA1 Infineon-BTS5008-1EKB-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a85189c1a7779
BTS50081EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
auf Bestellung 2657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+3.02 EUR
25+2.76 EUR
100+2.47 EUR
250+2.34 EUR
500+2.26 EUR
1000+2.19 EUR
Mindestbestellmenge: 5
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BTS50101EKBXUMA1 Infineon-BTS5010-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c62c7113e
BTS50101EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.88 EUR
25+2.64 EUR
100+2.36 EUR
250+2.23 EUR
500+2.15 EUR
1000+2.09 EUR
Mindestbestellmenge: 5
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BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
BTS50121EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.66 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.98 EUR
1000+1.92 EUR
Mindestbestellmenge: 5
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BTS50161EKBXUMA1 Infineon-BTS5016-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa41a7a3d1131
BTS50161EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS50302EKAXUMA1 Infineon-BTS5030-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41a4f9f1125
BTS50302EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.8 EUR
25+2.56 EUR
100+2.29 EUR
250+2.17 EUR
500+2.09 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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BTS50902EKAXUMA1 Infineon-BTS5090-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41130771071
BTS50902EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2.17 EUR
25+1.98 EUR
100+1.76 EUR
250+1.66 EUR
Mindestbestellmenge: 6
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BTS51202EKAXUMA1 Infineon-BTS5120-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41121fc106d
BTS51202EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.03 EUR
25+1.85 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
Mindestbestellmenge: 7
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IDM02G120C5XTMA1 Infineon-IDM02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c3fa614236
IDM02G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 2A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 30996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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IDM05G120C5XTMA1 Infineon-IDM05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef201501340f8f84748
IDM05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+3.26 EUR
100+2.26 EUR
Mindestbestellmenge: 4
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IDM08G120C5XTMA1 Infineon-IDM08G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c4028b4239
IDM08G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 8A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.55 EUR
100+2.48 EUR
500+2.17 EUR
Mindestbestellmenge: 4
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IDM10G120C5XTMA1 Infineon-IDM10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c40a77423d
IDM10G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 38A PGTO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 29pF @ 800V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 12 V
auf Bestellung 7409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.72 EUR
10+4.43 EUR
100+3.14 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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IFX1763XEJV50XUMA1 INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw
IFX1763XEJV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV33XUMA1 INFN-S-A0000606214-1.pdf?t.download=true&u=5oefqw
IFX54441EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX81481ELVXUMA1 Part_Number_Guide_Web.pdf
IFX81481ELVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
IPB100N04S4H2ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
12+1.59 EUR
Mindestbestellmenge: 9
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IPB100N06S205ATMA4 IPx100N06S2-05.pdf
IPB100N06S205ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N04S401ATMA1 Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t
IPB120N04S401ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
10+3.57 EUR
100+2.49 EUR
500+2.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPB120N04S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.22 EUR
100+2.24 EUR
500+1.91 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB160N04S203ATMA4 Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t
IPB160N04S203ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N04S400ATMA1 Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t
IPB180N04S400ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.99 EUR
10+4.62 EUR
100+3.28 EUR
500+3.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t
IPB180N04S401ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+3.76 EUR
100+2.63 EUR
500+2.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N04S4H0ATMA1 Infineon-IPB180N04S4_H0-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c4975375d77&ack=t
IPB180N04S4H0ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17940 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.74 EUR
100+2.94 EUR
500+2.41 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N04S403ATMA1 Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t
IPB80N04S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.53 EUR
100+1.73 EUR
500+1.39 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N04S404ATMA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPB80N04S404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.34 EUR
100+1.59 EUR
500+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S209ATMA2 INFNS09526-1.pdf?t.download=true&u=5oefqw
IPB80N06S209ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
10+3.12 EUR
100+2.17 EUR
500+1.84 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2H5ATMA2 Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t
IPB80N06S2H5ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2L06ATMA2 IPx80N06S2L-06.pdf
IPB80N06S2L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.79 EUR
100+2.66 EUR
500+2.37 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
IPD096N08N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.79 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
IPD100N04S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N08N3GATMA1 Infineon-IPD135N08N3-DS-v02_02-en.pdf?fileId=db3a30431add1d95011ae8b1143256d4
IPD135N08N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
auf Bestellung 10519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
14+1.34 EUR
100+0.99 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD26N06S2L35ATMA2 Infineon-IPD26N06S2L_35-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43351ff5b22&ack=t
IPD26N06S2L35ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N03S2L20ATMA1 Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t
IPD30N03S2L20ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
12+1.6 EUR
100+1.07 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S2L13ATMA4 Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t
IPD30N06S2L13ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.16 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06L+G++Rev1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431be39b97011c320778777982
IPD350N06LGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 28µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N03S2L06ATMA1 Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t
IPD50N03S2L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
Mindestbestellmenge: 5
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
15+1.19 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S4L08ATMA1 Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t
IPD50N04S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 17µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD70P04P409ATMA1 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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