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IPS80R1K4P7AKMA1 IPS80R1K4P7AKMA1 Infineon Technologies Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5 Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
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IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 Infineon Technologies Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 1462 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
75+0.82 EUR
150+0.73 EUR
525+0.6 EUR
1050+0.55 EUR
Mindestbestellmenge: 10
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 7500 Stücke:
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2500+0.56 EUR
5000+0.52 EUR
7500+0.5 EUR
Mindestbestellmenge: 2500
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 7500 Stücke:
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2500+1.29 EUR
Mindestbestellmenge: 2500
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 9151 Stücke:
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25+0.72 EUR
27+0.66 EUR
500+0.65 EUR
Mindestbestellmenge: 25
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 11678 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.69 EUR
100+1.91 EUR
500+1.53 EUR
1000+1.41 EUR
Mindestbestellmenge: 5
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PTFA080551EV4T500XWSA1 Infineon Technologies Description: IC FET RF LDMOS 55W H-36265-2
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PTFA211801EV5T350XWSA1 Infineon Technologies Description: IC RF FET LDMOS H-36260-2
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PTRA093302DC V1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP80R1K4P7XKSA1 IPP80R1K4P7XKSA1 Infineon Technologies Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5 Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
50+1.1 EUR
Mindestbestellmenge: 7
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IPP80R450P7XKSA1 IPP80R450P7XKSA1 Infineon Technologies Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5467 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
50+2.24 EUR
100+2.06 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.39 EUR
Mindestbestellmenge: 4
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IPP80R280P7XKSA1 IPP80R280P7XKSA1 Infineon Technologies Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.4 EUR
50+2.3 EUR
100+2.28 EUR
Mindestbestellmenge: 6
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IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.72 EUR
Mindestbestellmenge: 2500
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S70GL02GT11FHA010 S70GL02GT11FHA010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.49 EUR
10+50.39 EUR
25+48.77 EUR
50+47.56 EUR
180+45.37 EUR
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S70GL02GT11FHI010 S70GL02GT11FHI010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.09 EUR
10+41.72 EUR
25+40.39 EUR
40+39.72 EUR
180+37.59 EUR
360+36.63 EUR
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IRFC3004EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC3006EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC3107EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC3205ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC3206EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC3710ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4020D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4104EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4115ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4127ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC4227EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC4227ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4332ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC4368D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC4410ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4468D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4468ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4568EF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC4668D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4668EF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4768ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC8721ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRLC3813EB Infineon Technologies Description: MOSFET N-CH WAFER
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IRLC8259ED Infineon Technologies Description: MOSFET N-CH WAFER
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IRS2092C Infineon Technologies Part_Number_Guide_Web.pdf Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRS2092CD Infineon Technologies Part_Number_Guide_Web.pdf Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FS064SAGNFV030 S25FS064SAGNFV030 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS256SDPBHV020 S26KS256SDPBHV020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8261EXUMA3 TLE8261EXUMA3 Infineon Technologies TLE8261E.pdf Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8262EXUMA3 TLE8262EXUMA3 Infineon Technologies TLE8262E.pdf Description: IC TRANSCEIVER DSO36-38
Produkt ist nicht verfügbar
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TLE8263EXUMA3 TLE8263EXUMA3 Infineon Technologies TLE8263E_Rev1.0_4-1-2009.pdf Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Applications: Automotive
Supplier Device Package: PG-DSO-36-38
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE82642EXUMA3 TLE82642EXUMA3 Infineon Technologies TLE8264-2E.pdf Description: IC TRANSCEIVER DSO36-38
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TLE8264EXUMA4 TLE8264EXUMA4 Infineon Technologies TLE8264E.pdf Description: IC TRANSCEIVER DSO36-38
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TLE4299GV33NT TLE4299GV33NT Infineon Technologies TLE4299(GV,GMV)33.pdf Description: IC REG LINEAR 3.3V 150MA 8DSO
Produkt ist nicht verfügbar
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XMC4400F100F512BAXQMA1 XMC4400F100F512BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4400F100K512BAXQMA1 XMC4400F100K512BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.14 EUR
10+16.61 EUR
25+15.48 EUR
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IR38062MTRPBF IR38062MTRPBF Infineon Technologies Infineon-IR38062M-DS-v03_70-EN.pdf?fileId=5546d462533600a4015355d1717617a8 Description: IC REG BUCK ADJ 15A IQFN-34-900
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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FP25R12W2T4B11BOMA1 FP25R12W2T4B11BOMA1 Infineon Technologies Infineon-FP25R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a30431add1d95011aed27bf4a0232 Description: IGBT MOD 1200V 39A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+80.91 EUR
15+58.56 EUR
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FP35R12W2T4B11BOMA1 FP35R12W2T4B11BOMA1 Infineon Technologies Infineon-FP35R12W2T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30431add1d95011aed3bcbcc0279 Description: IGBT MOD 1200V 54A 215W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KE3BOSA1 FP25R12KE3BOSA1 Infineon Technologies Infineon-FP25R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9545185 Description: IGBT MOD 1200V 40A 155W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U134N16RRBOSA1 DDB6U134N16RRBOSA1 Infineon Technologies Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a Description: IGBT MOD 1600V 70A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Produkt ist nicht verfügbar
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FP75R12KE3BOSA1 FP75R12KE3BOSA1 Infineon Technologies Infineon-FP75R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b430ab755195 Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+171.69 EUR
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FS150R12KE3BOSA1 FS150R12KE3BOSA1 Infineon Technologies Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388 Description: IGBT MOD 1200V 200A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
1+204.3 EUR
10+179.24 EUR
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FS25R12W1T4BOMA1 FS25R12W1T4BOMA1 Infineon Technologies Infineon-FS25R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4c47b490549 Description: IGBT MOD 1200V 45A 205W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+68.09 EUR
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IPS80R1K4P7AKMA1 Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5
IPS80R1K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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IPU80R4K5P7AKMA1 Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e
IPU80R4K5P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 1462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
75+0.82 EUR
150+0.73 EUR
525+0.6 EUR
1050+0.55 EUR
Mindestbestellmenge: 10
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IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
5000+0.52 EUR
7500+0.5 EUR
Mindestbestellmenge: 2500
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IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.29 EUR
Mindestbestellmenge: 2500
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IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 9151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
27+0.66 EUR
500+0.65 EUR
Mindestbestellmenge: 25
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IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 11678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.69 EUR
100+1.91 EUR
500+1.53 EUR
1000+1.41 EUR
Mindestbestellmenge: 5
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PTFA080551EV4T500XWSA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 55W H-36265-2
Produkt ist nicht verfügbar
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PTFA211801EV5T350XWSA1
Hersteller: Infineon Technologies
Description: IC RF FET LDMOS H-36260-2
Produkt ist nicht verfügbar
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PTRA093302DC V1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP80R1K4P7XKSA1 Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5
IPP80R1K4P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
50+1.1 EUR
Mindestbestellmenge: 7
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IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+2.24 EUR
100+2.06 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.39 EUR
Mindestbestellmenge: 4
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IPP80R280P7XKSA1 Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f
IPP80R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
50+2.3 EUR
100+2.28 EUR
Mindestbestellmenge: 6
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IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.72 EUR
Mindestbestellmenge: 2500
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S70GL02GT11FHA010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHA010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.49 EUR
10+50.39 EUR
25+48.77 EUR
50+47.56 EUR
180+45.37 EUR
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S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHI010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.09 EUR
10+41.72 EUR
25+40.39 EUR
40+39.72 EUR
180+37.59 EUR
360+36.63 EUR
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IRFC3004EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC3006EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC3107EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC3205ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC3206EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC3710ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4020D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4104EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4115ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4127ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4227EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4227ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4332ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4368D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4410ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC4468D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4468ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFC4568EF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4668D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4668EF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4768ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC8721ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRLC3813EB
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
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IRLC8259ED
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
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IRS2092C Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRS2092CD Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FS064SAGNFV030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGNFV030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS256SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS256SDPBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8261EXUMA3 TLE8261E.pdf
TLE8261EXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8262EXUMA3 TLE8262E.pdf
TLE8262EXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Produkt ist nicht verfügbar
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TLE8263EXUMA3 TLE8263E_Rev1.0_4-1-2009.pdf
TLE8263EXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Applications: Automotive
Supplier Device Package: PG-DSO-36-38
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE82642EXUMA3 TLE8264-2E.pdf
TLE82642EXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Produkt ist nicht verfügbar
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TLE8264EXUMA4 TLE8264E.pdf
TLE8264EXUMA4
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Produkt ist nicht verfügbar
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TLE4299GV33NT TLE4299(GV,GMV)33.pdf
TLE4299GV33NT
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA 8DSO
Produkt ist nicht verfügbar
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XMC4400F100F512BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4400F100F512BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4400F100K512BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4400F100K512BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.14 EUR
10+16.61 EUR
25+15.48 EUR
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IR38062MTRPBF Infineon-IR38062M-DS-v03_70-EN.pdf?fileId=5546d462533600a4015355d1717617a8
IR38062MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 15A IQFN-34-900
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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FP25R12W2T4B11BOMA1 Infineon-FP25R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a30431add1d95011aed27bf4a0232
FP25R12W2T4B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 39A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.91 EUR
15+58.56 EUR
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FP35R12W2T4B11BOMA1 Infineon-FP35R12W2T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30431add1d95011aed3bcbcc0279
FP35R12W2T4B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 54A 215W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KE3BOSA1 Infineon-FP25R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9545185
FP25R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 155W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U134N16RRBOSA1 Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a
DDB6U134N16RRBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1600V 70A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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FP75R12KE3BOSA1 Infineon-FP75R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b430ab755195
FP75R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+171.69 EUR
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FS150R12KE3BOSA1 Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388
FS150R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+204.3 EUR
10+179.24 EUR
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FS25R12W1T4BOMA1 Infineon-FS25R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4c47b490549
FS25R12W1T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 45A 205W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.09 EUR
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