Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148879) > Seite 284 nach 2482
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IPG20N04S4L08ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 30982 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N04S4L11ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 32844 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S2L35ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 55V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 9613 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N10S4L22ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 25µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 4654 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL65R070C7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 28A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V Power Dissipation (Max): 169W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V |
auf Bestellung 3137 Stücke: Lieferzeit 10-14 Tag (e) |
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IR1168STRPBF | Infineon Technologies |
Description: IC SECONDARY SIDE CTRLR 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8.6V ~ 18V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Part Status: Active Current - Supply: 48 mA DigiKey Programmable: Not Verified |
auf Bestellung 3098 Stücke: Lieferzeit 10-14 Tag (e) |
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IR21844STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2906 Stücke: Lieferzeit 10-14 Tag (e) |
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IR3537MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 10DFN |
auf Bestellung 923 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF100S201 | Infineon Technologies |
Description: MOSFET N-CH 100V 192A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRF1404ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 4255 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7820TRPBF | Infineon Technologies |
Description: MOSFET N CH 200V 3.7A 8-SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V |
auf Bestellung 4909 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH3707TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12A/29A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5006TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 21A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V |
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IRFH5210TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 10A/55A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V |
auf Bestellung 7078 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5215TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 5A/27A PQFNPackaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFH5301TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 35A/100A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V |
auf Bestellung 6889 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5304TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/79A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
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IRFH5406TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V |
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IRFHM830TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A/40A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V |
auf Bestellung 7703 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHS9301TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 6A/13A 6PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
auf Bestellung 22252 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR024NTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
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IRFR120NTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 9.4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4410TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 88A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V |
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IRS27952STRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK/HALF-BRG 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down, Step-Up/Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500Hz Topology: Buck, Half-Bridge Voltage - Supply (Vcc/Vdd): 12V ~ 18V Supplier Device Package: 8-SOIC Synchronous Rectifier: Yes Control Features: Enable, Frequency Control Output Phases: 2 Duty Cycle (Max): 50% Clock Sync: No Part Status: Active Number of Outputs: 2 |
auf Bestellung 3838 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4205GXUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 6V-32V 20DSOPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 32V Technology: Bipolar Voltage - Load: 6V ~ 32V Supplier Device Package: PG-DSO-20-17 Motor Type - AC, DC: Brushed DC Grade: Automotive Part Status: Obsolete |
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TLE4252DATMA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ PG-TO252-5-11Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-5-11 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA Qualification: AEC-Q100 |
auf Bestellung 10135 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE42662GHTMA2 | Infineon Technologies |
Description: IC REG LIN 5V 150MA PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Grade: Automotive Part Status: Active PSRR: 68dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Qualification: AEC-Q100 |
auf Bestellung 17025 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4284DV50ATMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 1A TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 1.6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Last Time Buy PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
auf Bestellung 1744 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4946KHTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SC59Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 19mT Trip, -19mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SC59-3 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
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TLE49643KXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SC59Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 12.5mT Trip, 9.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 1.6mA Supplier Device Package: PG-SC59-3-5 Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 26465 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4966KHTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Open Collector Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 10mT Trip, -10mT Release Current - Output (Max): 10mA Current - Supply (Max): 7mA Supplier Device Package: PG-TSOP6-6 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1127 Stücke: Lieferzeit 10-14 Tag (e) |
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XC161CJ16F40FBBFXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 144TQFPPackaging: Cut Tape (CT) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 12x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Last Time Buy Number of I/O: 99 DigiKey Programmable: Not Verified |
auf Bestellung 2353 Stücke: Lieferzeit 10-14 Tag (e) |
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XC161CJ16F40FBBKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 144TQFPPackaging: Cut Tape (CT) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 12x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Last Time Buy Number of I/O: 99 DigiKey Programmable: Not Verified |
auf Bestellung 1986 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T038X0032ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3893 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLH5030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V |
auf Bestellung 4724 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLH5034TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 29A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLHM630TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A/40A PQFNPackaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 50µA Supplier Device Package: PQFN (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V |
auf Bestellung 7349 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLHS6276TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 4.5A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
auf Bestellung 3265 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE72592GEXUMA4 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 PGDSO816Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 7V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 20kBd Protocol: LINbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 300 mV Duplex: Full |
Produkt ist nicht verfügbar |
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| IRS2109C | Infineon Technologies |
Description: IC GATE DRVR MOSFETPackaging: Bulk DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| ICA21V05X1SA1 | Infineon Technologies |
Description: CHIP BARE DIEPackaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICA22V12X1SA1 | Infineon Technologies |
Description: CHIP BARE DIEPackaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICA32V02X1SA1 | Infineon Technologies | Description: CHIP BARE DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICA32V09X1SA1 | Infineon Technologies | Description: CHIP BARE DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICA32V19X1SA1 | Infineon Technologies | Description: CHIP BARE DIE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1EDN7512BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-SOT23-5-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDN7512GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 6WSONPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-WSON-6-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTS500101TADATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 48A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DPS310XTSA1 | Infineon Technologies |
Description: SENSOR 17.4PSIA 24BIT 8VLGAFeatures: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Output: 24 b Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa) Pressure Type: Absolute Accuracy: ±0.015PSI (±0.1kPa) Operating Temperature: -40°C ~ 85°C Termination Style: SMD (SMT) Tab Voltage - Supply: 1.7V ~ 3.6V Applications: Board Mount Supplier Device Package: PG-VLGA-8-1 Maximum Pressure: 145PSI (999.74kPa) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1EDN7512BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-SOT23-5-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 8886 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDN7512GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting, Non-Inverting Supplier Device Package: PG-WSON-6-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1077 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS500101TADATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 48A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLE4269GXUMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 5V Control Features: Reset Part Status: Not For New Designs Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 8 mA Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLE4279GXUMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA DSO8-16Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-16 Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 8 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE6251DSXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 PGDSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 200 mV Duplex: Full Part Status: Not For New Designs |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7250GVIOXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO816Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Not For New Designs |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7250GXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Duplex: Half |
Produkt ist nicht verfügbar |
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TLE72593GEXUMA3 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO816Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5.5V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LINbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 120 mV |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4269GNTMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 5V Control Features: Reset Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 8 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE6251DSNTMA1 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Full Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPG20N04S4L08ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 30982 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.84 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.91 EUR |
| IPG20N04S4L11ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 32844 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 12+ | 1.56 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| 2000+ | 0.73 EUR |
| IPG20N06S2L35ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 9613 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| IPG20N10S4L22ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4654 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.21 EUR |
| IPL65R070C7AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
auf Bestellung 3137 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.97 EUR |
| 10+ | 9.54 EUR |
| 100+ | 7.03 EUR |
| 500+ | 6.31 EUR |
| IR1168STRPBF |
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Hersteller: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
auf Bestellung 3098 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.22 EUR |
| 10+ | 3.16 EUR |
| 25+ | 2.89 EUR |
| 100+ | 2.6 EUR |
| 250+ | 2.45 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 2.3 EUR |
| IR21844STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.68 EUR |
| 10+ | 2.73 EUR |
| 25+ | 2.49 EUR |
| 100+ | 2.23 EUR |
| 250+ | 2.11 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.97 EUR |
| IR3537MTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Description: IC GATE DRVR HALF-BRIDGE 10DFN
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 10+ | 1.87 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.46 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.21 EUR |
| IRF100S201 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF1404ZSTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 4255 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.85 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.7 EUR |
| IRF7820TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
auf Bestellung 4909 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.97 EUR |
| IRFH3707TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.46 EUR |
| IRFH5006TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5210TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
auf Bestellung 7078 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 11+ | 1.65 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| IRFH5215TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5301TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
auf Bestellung 6889 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.83 EUR |
| IRFH5304TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5406TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
Description: MOSFET N-CH 60V 11A/40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFHM830TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V
auf Bestellung 7703 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 12+ | 1.5 EUR |
| 100+ | 1 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
| 2000+ | 0.65 EUR |
| IRFHS9301TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 22252 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.39 EUR |
| 2000+ | 0.37 EUR |
| IRFR024NTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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| IRFR120NTRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRFS4410TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Produkt ist nicht verfügbar
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| IRS27952STRPBF |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
auf Bestellung 3838 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.52 EUR |
| 10+ | 2.61 EUR |
| 25+ | 2.38 EUR |
| 100+ | 2.13 EUR |
| 250+ | 2.01 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.88 EUR |
| TLE4205GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Obsolete
Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE4252DATMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ PG-TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ PG-TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 10135 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 2.26 EUR |
| 25+ | 2.06 EUR |
| 100+ | 1.84 EUR |
| 250+ | 1.73 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.62 EUR |
| TLE42662GHTMA2 |
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Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 17025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 2.24 EUR |
| 25+ | 2.04 EUR |
| 100+ | 1.82 EUR |
| 250+ | 1.71 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.59 EUR |
| TLE4284DV50ATMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 1A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Last Time Buy
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 1A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Last Time Buy
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 1744 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 2.77 EUR |
| 25+ | 2.62 EUR |
| 100+ | 2.23 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.52 EUR |
| TLE4946KHTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE49643KXTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 12.5mT Trip, 9.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 1.6mA
Supplier Device Package: PG-SC59-3-5
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 12.5mT Trip, 9.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 1.6mA
Supplier Device Package: PG-SC59-3-5
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 26465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 24+ | 0.76 EUR |
| 25+ | 0.72 EUR |
| 27+ | 0.67 EUR |
| 50+ | 0.64 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.53 EUR |
| TLE4966KHTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1127 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 19+ | 0.93 EUR |
| 20+ | 0.88 EUR |
| 25+ | 0.82 EUR |
| 50+ | 0.78 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.65 EUR |
| XC161CJ16F40FBBFXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 45.99 EUR |
| 10+ | 42.42 EUR |
| 25+ | 40.52 EUR |
| 100+ | 36.23 EUR |
| 250+ | 34.56 EUR |
| 500+ | 32.89 EUR |
| XC161CJ16F40FBBKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 68.39 EUR |
| 10+ | 55.98 EUR |
| 25+ | 52.88 EUR |
| 100+ | 49.48 EUR |
| 250+ | 47.86 EUR |
| XMC1302T038X0032ABXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3893 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.85 EUR |
| 10+ | 2.86 EUR |
| 25+ | 2.62 EUR |
| 100+ | 2.34 EUR |
| 250+ | 2.21 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2.07 EUR |
| IRLH5030TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
auf Bestellung 4724 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.56 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.71 EUR |
| IRLH5034TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 29A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Description: MOSFET N-CH 40V 29A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRLHM630TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
auf Bestellung 7349 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.48 EUR |
| 12+ | 1.57 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| 2000+ | 0.69 EUR |
| IRLHS6276TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 4.5A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4.5A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 3265 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| 2000+ | 0.31 EUR |
| TLE72592GEXUMA4 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2109C |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR MOSFET
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC GATE DRVR MOSFET
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICA32V02X1SA1 |
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Description: CHIP BARE DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICA32V09X1SA1 |
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Description: CHIP BARE DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICA32V19X1SA1 |
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Description: CHIP BARE DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1EDN7512BXTSA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-5-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-5-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.38 EUR |
| 1EDN7512GXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-WSON-6-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-WSON-6-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS500101TADATMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPS310XTSA1 |
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Hersteller: Infineon Technologies
Description: SENSOR 17.4PSIA 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
Description: SENSOR 17.4PSIA 24BIT 8VLGA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 24 b
Operating Pressure: 4.35PSI ~ 17.4PSI (30kPa ~ 120kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 1.7V ~ 3.6V
Applications: Board Mount
Supplier Device Package: PG-VLGA-8-1
Maximum Pressure: 145PSI (999.74kPa)
Part Status: Active
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| 1EDN7512BXTSA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-5-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-5-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8886 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 29+ | 0.62 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.49 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.41 EUR |
| 1EDN7512GXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-WSON-6-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-WSON-6-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1077 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 25+ | 0.72 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.57 EUR |
| 250+ | 0.53 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.49 EUR |
| BTS500101TADATMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 48A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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| TLE4269GXUMA2 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Not For New Designs
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Not For New Designs
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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| TLE4279GXUMA2 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8-16
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-16
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA DSO8-16
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-16
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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| TLE6251DSXUMA2 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.74 EUR |
| TLE7250GVIOXUMA2 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.6 EUR |
| TLE7250GXUMA2 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Duplex: Half
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| TLE72593GEXUMA3 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.92 EUR |
| 5000+ | 0.9 EUR |
| TLE4269GNTMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TLE6251DSNTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Obsolete
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Obsolete
Produkt ist nicht verfügbar
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