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AUIRLR3410TRL AUIRLR3410TRL Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
10+3.22 EUR
Mindestbestellmenge: 4
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AUIRS2113STR AUIRS2113STR Infineon Technologies auirs2110.pdf?fileId=5546d462533600a4015355bf39ce15a6 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIRS2301STR AUIRS2301STR Infineon Technologies auirs2301s.pdf?fileId=5546d462533600a4015355bf803c15be Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10328 Stücke:
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5+3.89 EUR
10+2.89 EUR
25+2.64 EUR
100+2.37 EUR
250+2.23 EUR
500+2.16 EUR
1000+2.09 EUR
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 Infineon Technologies bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4 Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 17326 Stücke:
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19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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BSC009NE2LS5ATMA1 BSC009NE2LS5ATMA1 Infineon Technologies Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310 Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 9993 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2.19 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.28 EUR
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BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 Infineon Technologies Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
auf Bestellung 3161 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
10+2.51 EUR
100+1.86 EUR
500+1.58 EUR
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 Infineon Technologies Infineon-BSC010N04LSI-DS-v02_01-en.pdf?fileId=db3a3043353fdc16013552d84dc147dc Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
auf Bestellung 7498 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.26 EUR
10+3.31 EUR
100+2.48 EUR
500+1.99 EUR
1000+1.85 EUR
Mindestbestellmenge: 5
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BSC026N04LSATMA1 BSC026N04LSATMA1 Infineon Technologies Infineon-BSC026N04LS-DS-v02_00-en.pdf?fileId=db3a3043410d6ee40141127f49e92b5d Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 4575 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
14+1.29 EUR
100+1.01 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.84 EUR
Mindestbestellmenge: 13
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BSC026N08NS5ATMA1 BSC026N08NS5ATMA1 Infineon Technologies Infineon-BSC026N08NS5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014ae2eace7629e0 Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
auf Bestellung 9152 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+3.64 EUR
100+2.75 EUR
500+2.45 EUR
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BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 Infineon Technologies Infineon-BSC026NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c0950eede22f3 Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.53 EUR
100+1.09 EUR
500+0.87 EUR
1000+0.76 EUR
2000+0.73 EUR
Mindestbestellmenge: 8
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BSC032N04LSATMA1 BSC032N04LSATMA1 Infineon Technologies Infineon-BSC032N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424bc4f341701d Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 12131 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
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BSC037N08NS5ATMA1 BSC037N08NS5ATMA1 Infineon Technologies Infineon-BSC037N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae9ad3b8e1c33 Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 12075 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.08 EUR
10+3.03 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
2000+1.61 EUR
Mindestbestellmenge: 5
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 Infineon Technologies Infineon-BSC072N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3d8e8192c7c Description: MOSFET N-CH 80V 74A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
auf Bestellung 21625 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
12+1.59 EUR
100+1.31 EUR
500+1.30 EUR
Mindestbestellmenge: 9
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BSC0921NDIATMA1 BSC0921NDIATMA1 Infineon Technologies Infineon-BSC0921NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ca6892d00036 Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 13013 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
14+1.32 EUR
100+1.11 EUR
500+1.07 EUR
1000+0.96 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
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BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Infineon Technologies Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Description: MOSFET N-CH 150V 87A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 9684 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.00 EUR
10+3.98 EUR
100+2.89 EUR
500+2.64 EUR
Mindestbestellmenge: 4
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BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 Infineon Technologies Infineon-BSC117N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae97632721c1b Description: MOSFET N-CH 80V 49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 22194 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
11+1.63 EUR
100+1.23 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 7
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BSG0811NDATMA1 BSG0811NDATMA1 Infineon Technologies Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263 Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 2212 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.96 EUR
10+2.79 EUR
100+2.05 EUR
500+1.65 EUR
Mindestbestellmenge: 5
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BSL308CH6327XTSA1 BSL308CH6327XTSA1 Infineon Technologies Infineon-BSL308C-DS-v02_01-en.pdf?fileId=db3a30431ff98815012060ff862e6193 Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8420 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
20+0.89 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 13
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BSL316CH6327XTSA1 BSL316CH6327XTSA1 Infineon Technologies BSL316C_rev2+3.pdf?fileId=db3a30431add1d95011aed6aee7702ee Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 88475 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
27+0.66 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.24 EUR
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 Infineon Technologies Infineon-BSL606SN-DS-v02_02-en.pdf?fileId=db3a30433c6c52e2013c6ca13340015f Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18913 Stücke:
Lieferzeit 10-14 Tag (e)
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26+0.70 EUR
100+0.48 EUR
500+0.41 EUR
1000+0.36 EUR
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 Infineon Technologies Infineon-BSS806NE-DS-v02_01-en.pdf?fileId=db3a304340f610c201410d1548de3366 Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10765 Stücke:
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31+0.58 EUR
59+0.30 EUR
100+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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BSZ034N04LSATMA1 BSZ034N04LSATMA1 Infineon Technologies Infineon-BSZ034N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c3fe5bc7083 Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33520 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
18+1.02 EUR
100+0.77 EUR
500+0.71 EUR
1000+0.65 EUR
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BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 Infineon Technologies BSZ15DC02KDH_Rev2.3_1-17-19.pdf Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 14971 Stücke:
Lieferzeit 10-14 Tag (e)
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12+1.49 EUR
100+1.11 EUR
500+0.92 EUR
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 Infineon Technologies Infineon-ICE1HS01G_1-DS-v02_00-en.pdf?fileId=db3a3043382e837301383116a3354a93 Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
Produkt ist nicht verfügbar
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ICE3PCS02GXUMA1 ICE3PCS02GXUMA1 Infineon Technologies Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b Description: IC PFC CTRLR CCM 250KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 250kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
auf Bestellung 18050 Stücke:
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6+3.12 EUR
10+2.30 EUR
25+2.09 EUR
100+1.87 EUR
250+1.76 EUR
500+1.69 EUR
1000+1.64 EUR
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IPB020N08N5ATMA1 IPB020N08N5ATMA1 Infineon Technologies Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
auf Bestellung 3966 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.00 EUR
10+4.82 EUR
100+3.84 EUR
500+3.20 EUR
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 Infineon Technologies Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81 Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 2004 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.27 EUR
10+4.11 EUR
100+2.88 EUR
500+2.36 EUR
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IPB180N10S402ATMA1 IPB180N10S402ATMA1 Infineon Technologies Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 649 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.32 EUR
10+6.50 EUR
100+5.26 EUR
500+4.61 EUR
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IPD50N04S410ATMA1 IPD50N04S410ATMA1 Infineon Technologies Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Description: MOSFET N-CH 40V 50A TO252-3-313
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
15+1.21 EUR
100+0.80 EUR
500+0.62 EUR
1000+0.56 EUR
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IPD60N10S4L12ATMA1 IPD60N10S4L12ATMA1 Infineon Technologies Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505 Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67464 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
10+2.12 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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IPD80R1K4CEATMA1 IPD80R1K4CEATMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.19 EUR
10+2.03 EUR
100+1.37 EUR
500+1.09 EUR
1000+1.00 EUR
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IPG20N04S4L08ATMA1 IPG20N04S4L08ATMA1 Infineon Technologies Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34158 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.20 EUR
10+2.04 EUR
100+1.38 EUR
500+1.09 EUR
1000+0.97 EUR
2000+0.92 EUR
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IPG20N04S4L11ATMA1 IPG20N04S4L11ATMA1 Infineon Technologies Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38095 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+1.73 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
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IPG20N06S2L35ATMA1 IPG20N06S2L35ATMA1 Infineon Technologies Infineon-IPG20N06S2L_35-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a30432313ff5e0123a3b9596f2692&ack=t Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14314 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
2000+0.90 EUR
Mindestbestellmenge: 6
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IPG20N10S4L22ATMA1 IPG20N10S4L22ATMA1 Infineon Technologies Infineon-IPG20N10S4L_22-DS-v01_01-en.pdf?fileId=db3a3043372d5cc801374ffbdf9504fd Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9668 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.24 EUR
Mindestbestellmenge: 5
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IPL65R070C7AUMA1 IPL65R070C7AUMA1 Infineon Technologies Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
auf Bestellung 3137 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.97 EUR
10+9.54 EUR
100+7.03 EUR
500+6.31 EUR
Mindestbestellmenge: 2
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IR1168STRPBF IR1168STRPBF Infineon Technologies ir1168.pdf?fileId=5546d462533600a4015355c467fa1658 Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
auf Bestellung 709 Stücke:
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4+4.58 EUR
10+3.42 EUR
25+3.13 EUR
100+2.81 EUR
250+2.66 EUR
500+2.56 EUR
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IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
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IR21844STRPBF IR21844STRPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5386 Stücke:
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10+2.83 EUR
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500+2.11 EUR
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IR3537MTRPBF IR3537MTRPBF Infineon Technologies ir3537.pdf?fileId=5546d462533600a4015355cd6c46175c Description: IC GATE DRVR HALF-BRIDGE 10DFN
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
10+1.87 EUR
25+1.78 EUR
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250+1.36 EUR
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IR3556MTRPBF IR3556MTRPBF Infineon Technologies pb-ir3556.pdf?fileId=5546d462533600a40153567fe2fb28d7 Description: IC GATE DRIVER 50A 30PQFN
Packaging: Cut Tape (CT)
Features: Diode Emulation, Status Flag
Package / Case: 30-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters, Voltage Regulators
Current - Output / Channel: 50A
Voltage - Load: 4.5V ~ 15V
Supplier Device Package: 30-PQFN (6x6)
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IRF100S201 IRF100S201 Infineon Technologies irf100s201.pdf?fileId=5546d462533600a4015355da574c1880 Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1490 Stücke:
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10+4.74 EUR
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IRF1404ZSTRLPBF IRF1404ZSTRLPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 2276 Stücke:
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10+2.43 EUR
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IRF540ZSTRLPBF IRF540ZSTRLPBF Infineon Technologies IRF540Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7820TRPBF IRF7820TRPBF Infineon Technologies irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00 Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
auf Bestellung 4035 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
10+1.78 EUR
100+1.28 EUR
500+1.04 EUR
1000+0.99 EUR
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IRFH3707TRPBF IRFH3707TRPBF Infineon Technologies irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78 Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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IRFH5006TRPBF IRFH5006TRPBF Infineon Technologies irfh5006pbf.pdf?fileId=5546d462533600a40153561aa6561e96 Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Produkt ist nicht verfügbar
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IRFH5210TRPBF IRFH5210TRPBF Infineon Technologies irfh5210pbf.pdf?fileId=5546d462533600a40153561b0c461eb0 Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
auf Bestellung 3352 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+1.94 EUR
100+1.41 EUR
500+1.11 EUR
1000+0.96 EUR
2000+0.94 EUR
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IRFH5215TRPBF IRFH5215TRPBF Infineon Technologies irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2 Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5301TRPBF IRFH5301TRPBF Infineon Technologies irfh5301pbf.pdf?fileId=5546d462533600a40153561b477b1ebe Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
auf Bestellung 7346 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
13+1.37 EUR
100+1.01 EUR
500+0.89 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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IRFH5304TRPBF IRFH5304TRPBF Infineon Technologies irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7 Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
auf Bestellung 3 Stücke:
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IRFH5406TRPBF IRFH5406TRPBF Infineon Technologies irfh5406pbf.pdf?fileId=5546d462533600a40153561e92861ece Description: MOSFET N-CH 60V 11A/40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
Produkt ist nicht verfügbar
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IRFHM830TRPBF IRFHM830TRPBF Infineon Technologies irfhm830pbf.pdf?fileId=5546d462533600a40153562334f61f47 Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V
auf Bestellung 7703 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
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IRFHS8342TRPBF IRFHS8342TRPBF Infineon Technologies irfhs8342pbf.pdf?fileId=5546d462533600a401535623992e1f5f Description: MOSFET N-CH 30V 8.8A/19A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 27993 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
23+0.77 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.33 EUR
2000+0.32 EUR
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IRFHS9301TRPBF IRFHS9301TRPBF Infineon Technologies irfhs9301pbf.pdf?fileId=5546d462533600a401535623a01c1f61 Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 22533 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.30 EUR
20+0.91 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.42 EUR
2000+0.40 EUR
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IRFR024NTRLPBF IRFR024NTRLPBF Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR120NTRLPBF IRFR120NTRLPBF Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
13+1.40 EUR
Mindestbestellmenge: 8
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IRFS4410TRLPBF IRFS4410TRLPBF Infineon Technologies irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0 Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS27952STRPBF IRS27952STRPBF Infineon Technologies irs27951s.pdf?fileId=5546d462533600a40153567b77792849 Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
auf Bestellung 4179 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+3.13 EUR
25+2.86 EUR
100+2.57 EUR
250+2.43 EUR
500+2.34 EUR
1000+2.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLE4205GXUMA1 TLE4205GXUMA1 Infineon Technologies Infineon-TLE4205-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4393a186d4a&ack=t Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR3410TRL IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
AUIRLR3410TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AUIRS2113STR auirs2110.pdf?fileId=5546d462533600a4015355bf39ce15a6
AUIRS2113STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRS2301STR auirs2301s.pdf?fileId=5546d462533600a4015355bf803c15be
AUIRS2301STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.89 EUR
25+2.64 EUR
100+2.37 EUR
250+2.23 EUR
500+2.16 EUR
1000+2.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BAT6302VH6327XTSA1 bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4
BAT6302VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 17326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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BSC009NE2LS5ATMA1 Infineon-BSC009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c096c7c152310
BSC009NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/223A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 9993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.19 EUR
100+1.63 EUR
500+1.31 EUR
1000+1.28 EUR
Mindestbestellmenge: 6
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BSC009NE2LS5IATMA1 Infineon-BSC009NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c09a38586234e
BSC009NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 40A/217A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 217A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 12 V
auf Bestellung 3161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.51 EUR
100+1.86 EUR
500+1.58 EUR
Mindestbestellmenge: 6
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BSC010N04LSIATMA1 Infineon-BSC010N04LSI-DS-v02_01-en.pdf?fileId=db3a3043353fdc16013552d84dc147dc
BSC010N04LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 20 V
auf Bestellung 7498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+3.31 EUR
100+2.48 EUR
500+1.99 EUR
1000+1.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSC026N04LSATMA1 Infineon-BSC026N04LS-DS-v02_00-en.pdf?fileId=db3a3043410d6ee40141127f49e92b5d
BSC026N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
auf Bestellung 4575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
14+1.29 EUR
100+1.01 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.84 EUR
Mindestbestellmenge: 13
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BSC026N08NS5ATMA1 Infineon-BSC026N08NS5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014ae2eace7629e0
BSC026N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
auf Bestellung 9152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.64 EUR
100+2.75 EUR
500+2.45 EUR
Mindestbestellmenge: 4
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BSC026NE2LS5ATMA1 Infineon-BSC026NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c0950eede22f3
BSC026NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.53 EUR
100+1.09 EUR
500+0.87 EUR
1000+0.76 EUR
2000+0.73 EUR
Mindestbestellmenge: 8
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BSC032N04LSATMA1 Infineon-BSC032N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424bc4f341701d
BSC032N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 12131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
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BSC037N08NS5ATMA1 Infineon-BSC037N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae9ad3b8e1c33
BSC037N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 12075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+3.03 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
2000+1.61 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSC072N08NS5ATMA1 Infineon-BSC072N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae3d8e8192c7c
BSC072N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 74A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
auf Bestellung 21625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
12+1.59 EUR
100+1.31 EUR
500+1.30 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BSC0921NDIATMA1 Infineon-BSC0921NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ca6892d00036
BSC0921NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 13013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.32 EUR
100+1.11 EUR
500+1.07 EUR
1000+0.96 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
BSC093N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 87A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 9684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.00 EUR
10+3.98 EUR
100+2.89 EUR
500+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BSC117N08NS5ATMA1 Infineon-BSC117N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae97632721c1b
BSC117N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 22194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.63 EUR
100+1.23 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 7
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BSG0811NDATMA1 Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263
BSG0811NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/41A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 41A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 2212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.79 EUR
100+2.05 EUR
500+1.65 EUR
Mindestbestellmenge: 5
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BSL308CH6327XTSA1 Infineon-BSL308C-DS-v02_01-en.pdf?fileId=db3a30431ff98815012060ff862e6193
BSL308CH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.89 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 13
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BSL316CH6327XTSA1 BSL316C_rev2+3.pdf?fileId=db3a30431add1d95011aed6aee7702ee
BSL316CH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 1.4A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 88475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
27+0.66 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.24 EUR
Mindestbestellmenge: 16
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BSL606SNH6327XTSA1 Infineon-BSL606SN-DS-v02_02-en.pdf?fileId=db3a30433c6c52e2013c6ca13340015f
BSL606SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 4.5A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
26+0.70 EUR
100+0.48 EUR
500+0.41 EUR
1000+0.36 EUR
Mindestbestellmenge: 17
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BSS806NEH6327XTSA1 Infineon-BSS806NE-DS-v02_01-en.pdf?fileId=db3a304340f610c201410d1548de3366
BSS806NEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
59+0.30 EUR
100+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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BSZ034N04LSATMA1 Infineon-BSZ034N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c3fe5bc7083
BSZ034N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+1.02 EUR
100+0.77 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 11
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BSZ15DC02KDHXTMA1 BSZ15DC02KDH_Rev2.3_1-17-19.pdf
BSZ15DC02KDHXTMA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.1A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 14971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
12+1.49 EUR
100+1.11 EUR
500+0.92 EUR
1000+0.83 EUR
Mindestbestellmenge: 8
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ICE1HS01G1XUMA1 Infineon-ICE1HS01G_1-DS-v02_00-en.pdf?fileId=db3a3043382e837301383116a3354a93
ICE1HS01G1XUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
Produkt ist nicht verfügbar
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ICE3PCS02GXUMA1 Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b
ICE3PCS02GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 250KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 250kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 380 µA
auf Bestellung 18050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+2.30 EUR
25+2.09 EUR
100+1.87 EUR
250+1.76 EUR
500+1.69 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
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IPB020N08N5ATMA1 Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d
IPB020N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
auf Bestellung 3966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.00 EUR
10+4.82 EUR
100+3.84 EUR
500+3.20 EUR
Mindestbestellmenge: 3
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IPB031N08N5ATMA1 Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81
IPB031N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 2004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
10+4.11 EUR
100+2.88 EUR
500+2.36 EUR
Mindestbestellmenge: 3
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
IPB180N10S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
10+6.50 EUR
100+5.26 EUR
500+4.61 EUR
Mindestbestellmenge: 3
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IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
IPD50N04S410ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3-313
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.80 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
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IPD60N10S4L12ATMA1 Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505
IPD60N10S4L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.12 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
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IPD80R1K4CEATMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPD80R1K4CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.03 EUR
100+1.37 EUR
500+1.09 EUR
1000+1.00 EUR
Mindestbestellmenge: 6
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IPG20N04S4L08ATMA1 Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f
IPG20N04S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.20 EUR
10+2.04 EUR
100+1.38 EUR
500+1.09 EUR
1000+0.97 EUR
2000+0.92 EUR
Mindestbestellmenge: 6
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IPG20N04S4L11ATMA1 Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14
IPG20N04S4L11ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
Mindestbestellmenge: 7
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IPG20N06S2L35ATMA1 Infineon-IPG20N06S2L_35-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a30432313ff5e0123a3b9596f2692&ack=t
IPG20N06S2L35ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
2000+0.90 EUR
Mindestbestellmenge: 6
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IPG20N10S4L22ATMA1 Infineon-IPG20N10S4L_22-DS-v01_01-en.pdf?fileId=db3a3043372d5cc801374ffbdf9504fd
IPG20N10S4L22ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.24 EUR
Mindestbestellmenge: 5
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IPL65R070C7AUMA1 Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d
IPL65R070C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 28A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
auf Bestellung 3137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.97 EUR
10+9.54 EUR
100+7.03 EUR
500+6.31 EUR
Mindestbestellmenge: 2
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IR1168STRPBF ir1168.pdf?fileId=5546d462533600a4015355c467fa1658
IR1168STRPBF
Hersteller: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
auf Bestellung 709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+3.42 EUR
25+3.13 EUR
100+2.81 EUR
250+2.66 EUR
500+2.56 EUR
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
Mindestbestellmenge: 9
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IR21844STRPBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.80 EUR
10+2.83 EUR
25+2.59 EUR
100+2.32 EUR
250+2.19 EUR
500+2.11 EUR
1000+2.05 EUR
Mindestbestellmenge: 5
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IR3537MTRPBF ir3537.pdf?fileId=5546d462533600a4015355cd6c46175c
IR3537MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
10+1.87 EUR
25+1.78 EUR
100+1.46 EUR
250+1.36 EUR
500+1.21 EUR
Mindestbestellmenge: 9
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IR3556MTRPBF pb-ir3556.pdf?fileId=5546d462533600a40153567fe2fb28d7
IR3556MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER 50A 30PQFN
Packaging: Cut Tape (CT)
Features: Diode Emulation, Status Flag
Package / Case: 30-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters, Voltage Regulators
Current - Output / Channel: 50A
Voltage - Load: 4.5V ~ 15V
Supplier Device Package: 30-PQFN (6x6)
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IRF100S201 irf100s201.pdf?fileId=5546d462533600a4015355da574c1880
IRF100S201
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 192A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
10+4.74 EUR
100+3.52 EUR
Mindestbestellmenge: 3
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IRF1404ZSTRLPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 2276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.43 EUR
100+1.77 EUR
Mindestbestellmenge: 6
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IRF540ZSTRLPBF IRF540Z%28S%2CL%29PbF.pdf
IRF540ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7820TRPBF irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00
IRF7820TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
auf Bestellung 4035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+1.78 EUR
100+1.28 EUR
500+1.04 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
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IRFH3707TRPBF irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78
IRFH3707TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.30 EUR
Mindestbestellmenge: 15
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IRFH5006TRPBF irfh5006pbf.pdf?fileId=5546d462533600a40153561aa6561e96
IRFH5006TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 21A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Produkt ist nicht verfügbar
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IRFH5210TRPBF irfh5210pbf.pdf?fileId=5546d462533600a40153561b0c461eb0
IRFH5210TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/55A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
auf Bestellung 3352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.94 EUR
100+1.41 EUR
500+1.11 EUR
1000+0.96 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
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IRFH5215TRPBF irfh5215pbf.pdf?fileId=5546d462533600a40153561b15111eb2
IRFH5215TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5A/27A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5301TRPBF irfh5301pbf.pdf?fileId=5546d462533600a40153561b477b1ebe
IRFH5301TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
auf Bestellung 7346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
13+1.37 EUR
100+1.01 EUR
500+0.89 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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IRFH5304TRPBF irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7
IRFH5304TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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IRFH5406TRPBF irfh5406pbf.pdf?fileId=5546d462533600a40153561e92861ece
IRFH5406TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V
Produkt ist nicht verfügbar
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IRFHM830TRPBF irfhm830pbf.pdf?fileId=5546d462533600a40153562334f61f47
IRFHM830TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V
auf Bestellung 7703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8
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IRFHS8342TRPBF irfhs8342pbf.pdf?fileId=5546d462533600a401535623992e1f5f
IRFHS8342TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.8A/19A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 27993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
23+0.77 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 16
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IRFHS9301TRPBF irfhs9301pbf.pdf?fileId=5546d462533600a401535623a01c1f61
IRFHS9301TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 22533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
20+0.91 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.42 EUR
2000+0.40 EUR
Mindestbestellmenge: 14
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IRFR024NTRLPBF irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c
IRFR024NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR120NTRLPBF irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d
IRFR120NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.40 EUR
Mindestbestellmenge: 8
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IRFS4410TRLPBF irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0
IRFS4410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Produkt ist nicht verfügbar
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IRS27952STRPBF irs27951s.pdf?fileId=5546d462533600a40153567b77792849
IRS27952STRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK/HALF-BRG 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500Hz
Topology: Buck, Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V ~ 18V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 50%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
auf Bestellung 4179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+3.13 EUR
25+2.86 EUR
100+2.57 EUR
250+2.43 EUR
500+2.34 EUR
1000+2.27 EUR
Mindestbestellmenge: 5
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TLE4205GXUMA1 Infineon-TLE4205-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4393a186d4a&ack=t
TLE4205GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Produkt ist nicht verfügbar
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