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PEF55016EV1.3-G Infineon Technologies Description: GEMINAX-D16 PRO E V2.1 16 CHANNE
Packaging: Bulk
auf Bestellung 3960 Stücke:
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14+36.49 EUR
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DF23MR12W1M1B11BOMA1 DF23MR12W1M1B11BOMA1 Infineon Technologies DF23MR12W1M1_B11.pdf Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF900R12IE4VPBOSA1 Infineon Technologies Infineon-FF900R12IE4VP-DS-v03_00-EN.pdf Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
auf Bestellung 117 Stücke:
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1+981.32 EUR
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FF900R12ME7WB11BPSA1 FF900R12ME7WB11BPSA1 Infineon Technologies Infineon-FF900R12ME7W_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018166f2f56b3b9f Description: MEDIUM POWER ECONO
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 890 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
Operating Temperature: -40°C ~ 175°C (TJ)
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IR3565BMFS08TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Packaging: Bulk
auf Bestellung 58250 Stücke:
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71+6.28 EUR
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CY7C1049G30-10VXI CY7C1049G30-10VXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 36SOJ
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 36-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Access Time: 10 ns
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2+12.36 EUR
19+10.61 EUR
38+10.23 EUR
57+10.02 EUR
114+9.66 EUR
266+9.25 EUR
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IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 Infineon Technologies Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051 Description: DIODE SIC 650V 29A PGHDSOP101
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
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IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 Infineon Technologies Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051 Description: DIODE SIC 650V 29A PGHDSOP101
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
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10+4.42 EUR
100+3.44 EUR
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IDDD16G65C6XTMA1 IDDD16G65C6XTMA1 Infineon Technologies Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c Description: DIODE SIC 650V 43A PGHDSOP101
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 43A
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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IDDD16G65C6XTMA1 IDDD16G65C6XTMA1 Infineon Technologies Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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100+6.83 EUR
500+5.75 EUR
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PTF180101M V1 PTF180101M V1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET LDMOS 28V RFP-10
Current - Test: 180 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-RFP-10
Technology: LDMOS
Gain: 16.5dB
Power - Output: 10W
Frequency: 1.99GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1µA
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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PTF210101M V1 PTF210101M V1 Infineon Technologies PTF210101M.pdf Description: IC FET RF LDMOS 10W TSSOP-10
Current - Test: 180 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: PG-RFP-10
Technology: LDMOS
Gain: 15dB
Power - Output: 10W
Frequency: 2.17GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1µA
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSB280N15NZ3G Infineon Technologies INFNS17442-1.pdf?t.download=true&u=5oefqw Description: BSB280N15 - 12V-300V N-CHANNEL P
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-5
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Produkt ist nicht verfügbar
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PXB4330EV2.1 Infineon Technologies Description: AOP ATM OAM PROCESSOR
auf Bestellung 246 Stücke:
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PXB4330EV1.1 Infineon Technologies Description: AOP ATM OAM PROCESSOR
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TD215N22KOFTIMHPSA1 TD215N22KOFTIMHPSA1 Infineon Technologies Infineon-TT215N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fe0c84e1c Description: THYR / DIODE MODULE DK BG-PB50AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 410 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 215 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
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1+313.67 EUR
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DD390N22STIMHPSA1 DD390N22STIMHPSA1 Infineon Technologies Infineon-DD390N22S-DataSheet-v03_02-EN.pdf?fileId=5546d462636cc8fb01639104e0583fd3 Description: DIODE MOD GP 2200V 390A BGPB50SB
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: BG-PB50SB-1
Current - Average Rectified (Io) (per Diode): 390A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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BSM200GB120DLCE3256HOSA1 Infineon Technologies Description: BSM200GB120DLC - IGBT
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BA892-02V BA892-02V Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: SILICON RF SWITCHING DIODE
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL40S212ARMA1 IRL40S212ARMA1 Infineon Technologies Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
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800+1.11 EUR
1600+1.02 EUR
2400+0.98 EUR
4000+0.96 EUR
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SLE 66R35 MCC2 SLE 66R35 MCC2 Infineon Technologies SLE66R35.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SP4001511XTMA1 SP4001511XTMA1 Infineon Technologies Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73 Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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SP4001511XTMA1 SP4001511XTMA1 Infineon Technologies Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73 Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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2+13.64 EUR
10+10.59 EUR
25+9.83 EUR
100+8.99 EUR
250+8.81 EUR
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SAF-XE164FN-24F80L AA SAF-XE164FN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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IPB120N06S403ATMA2 IPB120N06S403ATMA2 Infineon Technologies Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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FF23MR12W1M1C11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA824N6E6329XTSA1 BGA824N6E6329XTSA1 Infineon Technologies Infineon-BGA824N6-DataSheet-v03_04-EN.pdf?fileId=db3a30433f764301013f7b53cdd02721 Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: BeiDou, Galileo, GLONASS, GNSS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.615GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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EVALISO1H815GTOBO1 EVALISO1H815GTOBO1 Infineon Technologies Infineon-Evaluation_board_coreless_transformer_isolated_high_side_switch_with_ISO1H815G-AN-v01_00-EN.pdf?fileId=db3a304326dfb13001271ed693904e89 Description: EVAL BOARD FOR ISO1H815G
Supplied Contents: Board(s)
Utilized IC / Part: ISO1H815G
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
Secondary Attributes: Parallel Interface(s)
Contents: Board(s)
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
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1+213.26 EUR
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T3801N36TOFVTXPSA1 T3801N36TOFVTXPSA1 Infineon Technologies Infineon-T3801N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b430e1fc5224 Description: SCR MODULE 3.6KV 6020A TO-200AF
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 5370 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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IFX54211MBV33HTSA1 IFX54211MBV33HTSA1 Infineon Technologies Infineon-IFX54211MB%20V33-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153d220ba783e95 Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
auf Bestellung 170649 Stücke:
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ISP98DP10LMXTSA1 ISP98DP10LMXTSA1 Infineon Technologies Infineon-ISP98DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be30a89034a98 Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 165µA
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISP98DP10LMXTSA1 ISP98DP10LMXTSA1 Infineon Technologies Infineon-ISP98DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be30a89034a98 Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 165µA
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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27+0.68 EUR
30+0.6 EUR
100+0.51 EUR
250+0.47 EUR
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IPN65R1K5CE IPN65R1K5CE Infineon Technologies Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50 Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPN65R1K5CEATMA1 IPN65R1K5CEATMA1 Infineon Technologies Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50 Description: MOSFET N-CH 650V 5.2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MA15037577NDSA1 Infineon Technologies Description: POWER MODULE IGBT
Produkt ist nicht verfügbar
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IPW65R310CFD IPW65R310CFD Infineon Technologies INFNS17578-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Power Dissipation (Max): 104.2W (Tc)
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IPW65R155CFD7XKSA1 IPW65R155CFD7XKSA1 Infineon Technologies Infineon-IPW65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef402bf49c7 Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
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30+4.42 EUR
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IPW65R125CFD7XKSA1 IPW65R125CFD7XKSA1 Infineon Technologies Infineon-IPW65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d74437bbc Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 231 Stücke:
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30+4.09 EUR
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IPW65R090CFD7XKSA1 IPW65R090CFD7XKSA1 Infineon Technologies Infineon-IPW65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d48c07bb6 Description: HIGH POWER_NEW
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IPW65R018CFD7XKSA1 IPW65R018CFD7XKSA1 Infineon Technologies Infineon-IPW65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdfdb6202d1 Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
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IPW65R110CFD7XKSA1 IPW65R110CFD7XKSA1 Infineon Technologies Infineon-IPW65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d5e8e7bb9 Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+9.19 EUR
30+5.18 EUR
120+4.3 EUR
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IPW65R050CFD7AXKSA1 IPW65R050CFD7AXKSA1 Infineon Technologies Infineon-IPW65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c0167ea2084c Description: MOSFET N-CH 650V 45A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 202 Stücke:
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2+14.22 EUR
30+8.39 EUR
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IPW65R029CFD7XKSA1 IPW65R029CFD7XKSA1 Infineon Technologies Infineon-IPW65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f56af4495 Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPW65R15OCFDAFKSA1 Infineon Technologies Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65F6048A Infineon Technologies Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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TLV493DA2BWXTMA1 TLV493DA2BWXTMA1 Infineon Technologies Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9 Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
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TLV493DA2BWXTMA1 TLV493DA2BWXTMA1 Infineon Technologies Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9 Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
auf Bestellung 1084 Stücke:
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50+1.23 EUR
100+1.18 EUR
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1000+1.03 EUR
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CYTVIIBE1MSKTOBO1 CYTVIIBE1MSKTOBO1 Infineon Technologies Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Platform: Arduino
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
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CY241V08SXC-41 CY241V08SXC-41 Infineon Technologies Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-SOIC
Type: Clock Generator
Frequency - Max: 27MHz
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IPA60R120P7E8191XKSA1 Infineon Technologies Infineon-IPA60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a4c2ab65f51 Description: MOSFET N-CH 600V TO220FP-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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BBY5305WH6327XTSA1554 BBY5305WH6327XTSA1554 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: BBY53 - VARACTOR DIODE
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3000+0.21 EUR
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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 Infineon Technologies Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Description: TRENCH <= 40V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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4+5.21 EUR
10+3.39 EUR
100+2.35 EUR
500+1.91 EUR
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TD250N12KOF Infineon Technologies Description: TD250N12 - THYRISTOR / DIODE MOD
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F165LMHAXP F165LMHAXP Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 100MQFP
Part Status: Obsolete
Supplier Device Package: P-MQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Number of I/O: 77
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F3L300R12ME4B23BOSA1 F3L300R12ME4B23BOSA1 Infineon Technologies Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f Description: IGBT MOD 1200V 450A 1550W
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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2SP0115T2A0FF300R12NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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2SP0115T2A0FF450R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SP0115T2A0FF300R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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T1410N06TOFXPSA1 T1410N06TOFXPSA1 Infineon Technologies Infineon-T1410N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd8012863561884530b Description: SCR MODULE 600V 2500A DO-200AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2500 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 1490 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 23000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Produkt ist nicht verfügbar
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FS50R12N2T7B15BPSA2 FS50R12N2T7B15BPSA2 Infineon Technologies Infineon-FS50R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4acd62e2c Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 1 Stücke:
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1+93.16 EUR
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PEF55016EV1.3-G
Hersteller: Infineon Technologies
Description: GEMINAX-D16 PRO E V2.1 16 CHANNE
Packaging: Bulk
auf Bestellung 3960 Stücke:
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AnzahlPreis
14+36.49 EUR
Mindestbestellmenge: 14 Stücke
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DF23MR12W1M1B11BOMA1 DF23MR12W1M1_B11.pdf
DF23MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FF900R12IE4VPBOSA1 Infineon-FF900R12IE4VP-DS-v03_00-EN.pdf
Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
auf Bestellung 117 Stücke:
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AnzahlPreis
1+981.32 EUR
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FF900R12ME7WB11BPSA1 Infineon-FF900R12ME7W_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018166f2f56b3b9f
FF900R12ME7WB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 890 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
Operating Temperature: -40°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IR3565BMFS08TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Packaging: Bulk
auf Bestellung 58250 Stücke:
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AnzahlPreis
71+6.28 EUR
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CY7C1049G30-10VXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G30-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 36-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Access Time: 10 ns
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.36 EUR
19+10.61 EUR
38+10.23 EUR
57+10.02 EUR
114+9.66 EUR
266+9.25 EUR
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IDDD10G65C6XTMA1 Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051
IDDD10G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDDD10G65C6XTMA1 Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051
IDDD10G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.43 EUR
10+4.42 EUR
100+3.44 EUR
500+2.86 EUR
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IDDD16G65C6XTMA1 Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c
IDDD16G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 43A
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 3400 Stücke:
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AnzahlPreis
1700+5.18 EUR
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IDDD16G65C6XTMA1 Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c
IDDD16G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 3735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.83 EUR
10+9.37 EUR
100+6.83 EUR
500+5.75 EUR
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PTF180101M V1 fundamentals-of-power-semiconductors
PTF180101M V1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V RFP-10
Current - Test: 180 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-RFP-10
Technology: LDMOS
Gain: 16.5dB
Power - Output: 10W
Frequency: 1.99GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1µA
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTF210101M V1 PTF210101M.pdf
PTF210101M V1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Current - Test: 180 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: PG-RFP-10
Technology: LDMOS
Gain: 15dB
Power - Output: 10W
Frequency: 2.17GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1µA
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSB280N15NZ3G INFNS17442-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSB280N15 - 12V-300V N-CHANNEL P
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-5
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Produkt ist nicht verfügbar
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PXB4330EV2.1
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
auf Bestellung 246 Stücke:
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AnzahlPreis
2+335.75 EUR
Mindestbestellmenge: 2 Stücke
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PXB4330EV1.1
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
Produkt ist nicht verfügbar
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TD215N22KOFTIMHPSA1 Infineon-TT215N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fe0c84e1c
TD215N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB50AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 410 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 215 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
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AnzahlPreis
1+313.67 EUR
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DD390N22STIMHPSA1 Infineon-DD390N22S-DataSheet-v03_02-EN.pdf?fileId=5546d462636cc8fb01639104e0583fd3
DD390N22STIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 390A BGPB50SB
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: BG-PB50SB-1
Current - Average Rectified (Io) (per Diode): 390A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
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AnzahlPreis
1+180.86 EUR
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BSM200GB120DLCE3256HOSA1
Hersteller: Infineon Technologies
Description: BSM200GB120DLC - IGBT
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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BA892-02V INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02V
Hersteller: Infineon Technologies
Description: SILICON RF SWITCHING DIODE
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Standard - Single
Package / Case: SC-79, SOD-523
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL40S212ARMA1 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
IRL40S212ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.11 EUR
1600+1.02 EUR
2400+0.98 EUR
4000+0.96 EUR
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SLE 66R35 MCC2 SLE66R35.pdf
SLE 66R35 MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SP4001511XTMA1 Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73
SP4001511XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1800 Stücke:
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AnzahlPreis
1800+8.02 EUR
Mindestbestellmenge: 1800 Stücke
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SP4001511XTMA1 Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73
SP4001511XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2744 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.64 EUR
10+10.59 EUR
25+9.83 EUR
100+8.99 EUR
250+8.81 EUR
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SAF-XE164FN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAF-XE164FN-24F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB120N06S403ATMA2 Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc
IPB120N06S403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF23MR12W1M1C11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA824N6E6329XTSA1 Infineon-BGA824N6-DataSheet-v03_04-EN.pdf?fileId=db3a30433f764301013f7b53cdd02721
BGA824N6E6329XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: BeiDou, Galileo, GLONASS, GNSS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.615GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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EVALISO1H815GTOBO1 Infineon-Evaluation_board_coreless_transformer_isolated_high_side_switch_with_ISO1H815G-AN-v01_00-EN.pdf?fileId=db3a304326dfb13001271ed693904e89
EVALISO1H815GTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISO1H815G
Supplied Contents: Board(s)
Utilized IC / Part: ISO1H815G
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
Secondary Attributes: Parallel Interface(s)
Contents: Board(s)
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+213.26 EUR
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T3801N36TOFVTXPSA1 Infineon-T3801N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b430e1fc5224
T3801N36TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3.6KV 6020A TO-200AF
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 5370 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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IFX54211MBV33HTSA1 Infineon-IFX54211MB%20V33-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153d220ba783e95
IFX54211MBV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
auf Bestellung 170649 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
818+0.55 EUR
Mindestbestellmenge: 818 Stücke
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ISP98DP10LMXTSA1 Infineon-ISP98DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be30a89034a98
ISP98DP10LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 165µA
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISP98DP10LMXTSA1 Infineon-ISP98DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be30a89034a98
ISP98DP10LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 165µA
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+0.99 EUR
27+0.68 EUR
30+0.6 EUR
100+0.51 EUR
250+0.47 EUR
Mindestbestellmenge: 18 Stücke
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IPN65R1K5CE Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50
IPN65R1K5CE
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPN65R1K5CEATMA1 Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50
IPN65R1K5CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MA15037577NDSA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT
Produkt ist nicht verfügbar
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IPW65R310CFD INFNS17578-1.pdf?t.download=true&u=5oefqw
IPW65R310CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Power Dissipation (Max): 104.2W (Tc)
auf Bestellung 10341 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
219+2.22 EUR
Mindestbestellmenge: 219 Stücke
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IPW65R155CFD7XKSA1 Infineon-IPW65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef402bf49c7
IPW65R155CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.92 EUR
30+4.42 EUR
120+3.65 EUR
Mindestbestellmenge: 3 Stücke
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IPW65R125CFD7XKSA1 Infineon-IPW65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d74437bbc
IPW65R125CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.46 EUR
30+4.09 EUR
120+3.55 EUR
Mindestbestellmenge: 3 Stücke
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IPW65R090CFD7XKSA1 Infineon-IPW65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d48c07bb6
IPW65R090CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.88 EUR
30+6.23 EUR
120+5.2 EUR
Mindestbestellmenge: 2 Stücke
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IPW65R018CFD7XKSA1 Infineon-IPW65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdfdb6202d1
IPW65R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
auf Bestellung 497 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+27.44 EUR
30+17.01 EUR
120+14.72 EUR
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IPW65R110CFD7XKSA1 Infineon-IPW65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d5e8e7bb9
IPW65R110CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.19 EUR
30+5.18 EUR
120+4.3 EUR
Mindestbestellmenge: 2 Stücke
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IPW65R050CFD7AXKSA1 Infineon-IPW65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c0167ea2084c
IPW65R050CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.22 EUR
30+8.39 EUR
120+7.11 EUR
Mindestbestellmenge: 2 Stücke
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IPW65R029CFD7XKSA1 Infineon-IPW65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f56af4495
IPW65R029CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+21.72 EUR
30+13.17 EUR
120+11.3 EUR
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IPW65R15OCFDAFKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65F6048A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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TLV493DA2BWXTMA1 Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9
TLV493DA2BWXTMA1
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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TLV493DA2BWXTMA1 Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9
TLV493DA2BWXTMA1
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.64 EUR
13+1.38 EUR
25+1.29 EUR
50+1.23 EUR
100+1.18 EUR
500+1.07 EUR
1000+1.03 EUR
Mindestbestellmenge: 11 Stücke
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CYTVIIBE1MSKTOBO1
CYTVIIBE1MSKTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Platform: Arduino
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Produkt ist nicht verfügbar
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CY241V08SXC-41
CY241V08SXC-41
Hersteller: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-SOIC
Type: Clock Generator
Frequency - Max: 27MHz
auf Bestellung 5267 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
214+2.46 EUR
Mindestbestellmenge: 214 Stücke
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IPA60R120P7E8191XKSA1 Infineon-IPA60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a4c2ab65f51
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V TO220FP-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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BBY5305WH6327XTSA1554 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY5305WH6327XTSA1554
Hersteller: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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IPA028N04NM3SXKSA1 Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6
IPA028N04NM3SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.21 EUR
10+3.39 EUR
100+2.35 EUR
500+1.91 EUR
Mindestbestellmenge: 4 Stücke
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TD250N12KOF
Hersteller: Infineon Technologies
Description: TD250N12 - THYRISTOR / DIODE MOD
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+251.29 EUR
Mindestbestellmenge: 3 Stücke
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F165LMHAXP INFNS01617-1.pdf?t.download=true&u=5oefqw
F165LMHAXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100MQFP
Part Status: Obsolete
Supplier Device Package: P-MQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Number of I/O: 77
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+23.94 EUR
Mindestbestellmenge: 23 Stücke
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F3L300R12ME4B23BOSA1 Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f
F3L300R12ME4B23BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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2SP0115T2A0FF300R12NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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2SP0115T2A0FF450R17NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SP0115T2A0FF300R17NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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T1410N06TOFXPSA1 Infineon-T1410N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd8012863561884530b
T1410N06TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2500A DO-200AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2500 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 1490 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 23000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Produkt ist nicht verfügbar
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FS50R12N2T7B15BPSA2 Infineon-FS50R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4acd62e2c
FS50R12N2T7B15BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+93.16 EUR
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