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BGS15MU14E6327XTSA1 BGS15MU14E6327XTSA1 Infineon Technologies Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Produkt ist nicht verfügbar
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BGS17GA14E6327XTSA1 Infineon Technologies Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759 Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 8800 Stücke:
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1065+0.47 EUR
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PBL386212QNA Infineon Technologies ERICS00541-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
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172+2.81 EUR
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PBL38621/2QNT-INF Infineon Technologies Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
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PBL38621/2QNT Infineon Technologies INFNS17910-1.pdf?t.download=true&u=5oefqw Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
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41+11.86 EUR
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IDW40G65C5B IDW40G65C5B Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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1+28.51 EUR
10+24.82 EUR
25+23.55 EUR
100+21.79 EUR
250+20.74 EUR
500+20.66 EUR
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TZ500N16KOFHPSA1 TZ500N16KOFHPSA1 Infineon Technologies Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21 Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
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TZ500N14KOFHPSA1 TZ500N14KOFHPSA1 Infineon Technologies TZ500N.pdf Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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TZ600N14KOFHPSA1 TZ600N14KOFHPSA1 Infineon Technologies TZ600N.pdf Description: SCR MODULE 1.6KV 1050A MODULE
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REFFRIDGED111TRC2SLTOBO1 REFFRIDGED111TRC2SLTOBO1 Infineon Technologies Infineon-UG-2021-31_REF_Fridge_D111T_RC2_SL_V1.1_EN-UserManual-v01_01-EN.pdf?fileId=8ac78c8c7e7124d1017ef751503b491d Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s), Cable(s)
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TLV49645TBXALA1 TLV49645TBXALA1 Infineon Technologies INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH UNIPOLAR TO92S
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLI49631MXTSA1 TLI49631MXTSA1 Infineon Technologies Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7 Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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28+0.63 EUR
32+0.56 EUR
34+0.53 EUR
36+0.49 EUR
50+0.47 EUR
100+0.44 EUR
500+0.40 EUR
1000+0.38 EUR
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BSM400GA170DLS Infineon Technologies EUPCS00266-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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IPB80P03P4L07ATMA2 IPB80P03P4L07ATMA2 Infineon Technologies Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KITIM69D127V11FLEXTOBO1 KITIM69D127V11FLEXTOBO1 Infineon Technologies Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
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1+46.20 EUR
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IFX2931GV33 IFX2931GV33 Infineon Technologies INFNS16937-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
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1648+0.32 EUR
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IFX8117MEV33 IFX8117MEV33 Infineon Technologies INFNS15203-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
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TLE4954CE4807BAMA1 Infineon Technologies 001651793.pdf Description: SPEED & CURRENT SENSORS
auf Bestellung 7500 Stücke:
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152+3.19 EUR
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BAV 99 E6433 BAV 99 E6433 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SOT23
Produkt ist nicht verfügbar
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ISP06P008NSATMA1 Infineon Technologies Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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5000+0.82 EUR
Mindestbestellmenge: 5000
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22919 Stücke:
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6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.88 EUR
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IRFI7446GPBF IRFI7446GPBF Infineon Technologies irfi7446gpbf.pdf Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
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338+1.43 EUR
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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10+1.87 EUR
11+1.68 EUR
100+1.31 EUR
500+1.08 EUR
1000+0.85 EUR
2000+0.79 EUR
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TLF4949EJ TLF4949EJ Infineon Technologies Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29 Description: IC REG LINEAR VOLT TLF4949
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737+0.72 EUR
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BSF083N03LQG Infineon Technologies INFNS15764-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
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BSC205N10LSG BSC205N10LSG Infineon Technologies INFNS16205-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BSC029N025SG BSC029N025SG Infineon Technologies INFNS13651-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
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BSC886N03LSGATMA1 BSC886N03LSGATMA1 Infineon Technologies BSC886N03LS_G.pdf Description: MOSFET N-CH 30V 13A/65A TDSON
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1205+0.44 EUR
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BAS70E6327 BAS70E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 107857 Stücke:
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IPL65R130CFD7AUMA1 IPL65R130CFD7AUMA1 Infineon Technologies Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IPL65R130CFD7AUMA1 IPL65R130CFD7AUMA1 Infineon Technologies Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
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IPT039N15N5ATMA1 IPT039N15N5ATMA1 Infineon Technologies Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5 Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Produkt ist nicht verfügbar
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IPT039N15N5ATMA1 IPT039N15N5ATMA1 Infineon Technologies Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5 Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 569 Stücke:
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10+9.03 EUR
100+6.63 EUR
500+5.90 EUR
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BAT1706WE6327 BAT1706WE6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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TT162N14KOFHPSA2 TT162N14KOFHPSA2 Infineon Technologies Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
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CY25404ZXI012 CY25404ZXI012 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2172 Stücke:
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25+20.32 EUR
Mindestbestellmenge: 25
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CY25404ZXI011 CY25404ZXI011 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
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33+15.53 EUR
Mindestbestellmenge: 33
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BGT60LTR11AIPE6327XUMA2 BGT60LTR11AIPE6327XUMA2 Infineon Technologies Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGT60LTR11AIPE6327XUMA2 BGT60LTR11AIPE6327XUMA2 Infineon Technologies Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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2+16.05 EUR
10+13.94 EUR
25+13.20 EUR
100+12.20 EUR
250+11.59 EUR
500+11.17 EUR
1000+11.01 EUR
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SHIELDBGT60LTR11AIPTOBO1 SHIELDBGT60LTR11AIPTOBO1 Infineon Technologies ProductSelectionGuide_v00_01_EN.pdf Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
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94-3250 94-3250 Infineon Technologies IRF6604.pdf Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6601 IRF6601 Infineon Technologies irf6601.pdf Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6602 IRF6602 Infineon Technologies irf6602.pdf Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
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BCR521E6327 BCR521E6327 Infineon Technologies INFNS16393-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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DDB6U50N16W1RPB11BPSA1 DDB6U50N16W1RPB11BPSA1 Infineon Technologies Infineon-DDB6U50N16W1RP_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017fb22db1fb79c4 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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1+61.85 EUR
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TLS850C2TEV50BOARDTOBO1 TLS850C2TEV50BOARDTOBO1 Infineon Technologies Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41 Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 3 Stücke:
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STT3300N18P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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BSO065N03MSGXUMA1 BSO065N03MSGXUMA1 Infineon Technologies BSO065N03MS_G.pdf Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200NDC Infineon Technologies Infineon-TC27xDC_DS_v10-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b292f74ce Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC277TP64F200SDCKXUMA3 TC277TP64F200SDCKXUMA3 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC275TP64F200WDBKXUMA1 TC275TP64F200WDBKXUMA1 Infineon Technologies Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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TC277TP64F200SCAKXUMA2 TC277TP64F200SCAKXUMA2 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC275TP64F200WCAKXQMA1 TC275TP64F200WCAKXQMA1 Infineon Technologies Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAK-TC275TP-64F200N DC SAK-TC275TP-64F200N DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA1 TC277TP64F200SDBKXUMA1 Infineon Technologies Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA2 TC277TP64F200SDBKXUMA2 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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BGS15MU14E6327XTSA1 Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f
BGS15MU14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Produkt ist nicht verfügbar
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BGS17GA14E6327XTSA1 Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1065+0.47 EUR
Mindestbestellmenge: 1065
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PBL386212QNA ERICS00541-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
172+2.81 EUR
Mindestbestellmenge: 172
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PBL38621/2QNT-INF
Hersteller: Infineon Technologies
Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
Produkt ist nicht verfügbar
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PBL38621/2QNT INFNS17910-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
41+11.86 EUR
Mindestbestellmenge: 41
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IDW40G65C5B Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5B
Hersteller: Infineon Technologies
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.51 EUR
10+24.82 EUR
25+23.55 EUR
100+21.79 EUR
250+20.74 EUR
500+20.66 EUR
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TZ500N16KOFHPSA1 Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21
TZ500N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+328.63 EUR
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TZ500N14KOFHPSA1 TZ500N.pdf
TZ500N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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TZ600N14KOFHPSA1 TZ600N.pdf
TZ600N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Produkt ist nicht verfügbar
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REFFRIDGED111TRC2SLTOBO1 Infineon-UG-2021-31_REF_Fridge_D111T_RC2_SL_V1.1_EN-UserManual-v01_01-EN.pdf?fileId=8ac78c8c7e7124d1017ef751503b491d
REFFRIDGED111TRC2SLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s), Cable(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+313.12 EUR
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TLV49645TBXALA1 INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw
TLV49645TBXALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLI49631MXTSA1 Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7
TLI49631MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
32+0.56 EUR
34+0.53 EUR
36+0.49 EUR
50+0.47 EUR
100+0.44 EUR
500+0.40 EUR
1000+0.38 EUR
Mindestbestellmenge: 28
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BSM400GA170DLS EUPCS00266-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+205.00 EUR
Mindestbestellmenge: 2
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IPB80P03P4L07ATMA2 Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd
IPB80P03P4L07ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KITIM69D127V11FLEXTOBO1
KITIM69D127V11FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.20 EUR
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IFX2931GV33 INFNS16937-1.pdf?t.download=true&u=5oefqw
IFX2931GV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1648+0.32 EUR
Mindestbestellmenge: 1648
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IFX8117MEV33 INFNS15203-1.pdf?t.download=true&u=5oefqw
IFX8117MEV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1501+0.37 EUR
Mindestbestellmenge: 1501
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TLE4954CE4807BAMA1 001651793.pdf
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.19 EUR
Mindestbestellmenge: 152
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BAV 99 E6433 bav99series.pdf
BAV 99 E6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Produkt ist nicht verfügbar
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ISP06P008NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.82 EUR
Mindestbestellmenge: 5000
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.88 EUR
Mindestbestellmenge: 6
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IRFI7446GPBF irfi7446gpbf.pdf
IRFI7446GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
338+1.43 EUR
Mindestbestellmenge: 338
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BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Produkt ist nicht verfügbar
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BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
auf Bestellung 4785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
11+1.68 EUR
100+1.31 EUR
500+1.08 EUR
1000+0.85 EUR
2000+0.79 EUR
Mindestbestellmenge: 10
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TLF4949EJ Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29
TLF4949EJ
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
737+0.72 EUR
Mindestbestellmenge: 737
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BSF083N03LQG INFNS15764-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
717+0.71 EUR
Mindestbestellmenge: 717
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BSC205N10LSG INFNS16205-1.pdf?t.download=true&u=5oefqw
BSC205N10LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 5751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
662+0.75 EUR
Mindestbestellmenge: 662
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BSC029N025SG INFNS13651-1.pdf?t.download=true&u=5oefqw
BSC029N025SG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
402+1.32 EUR
Mindestbestellmenge: 402
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BSC886N03LSGATMA1 BSC886N03LS_G.pdf
BSC886N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
auf Bestellung 8585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1205+0.44 EUR
Mindestbestellmenge: 1205
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BAS70E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70E6327
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 107857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3893+0.14 EUR
Mindestbestellmenge: 3893
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IPL65R130CFD7AUMA1 Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd
IPL65R130CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IPL65R130CFD7AUMA1 Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd
IPL65R130CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IPT039N15N5ATMA1 Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5
IPT039N15N5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Produkt ist nicht verfügbar
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IPT039N15N5ATMA1 Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5
IPT039N15N5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.27 EUR
10+9.03 EUR
100+6.63 EUR
500+5.90 EUR
Mindestbestellmenge: 2
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BAT1706WE6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT1706WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3406+0.14 EUR
Mindestbestellmenge: 3406
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TT162N14KOFHPSA2 Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N14KOFHPSA2
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+234.08 EUR
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CY25404ZXI012 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI012
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+20.32 EUR
Mindestbestellmenge: 25
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CY25404ZXI011 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI011
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 3053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+15.53 EUR
Mindestbestellmenge: 33
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BGT60LTR11AIPE6327XUMA2 Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e
BGT60LTR11AIPE6327XUMA2
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGT60LTR11AIPE6327XUMA2 Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e
BGT60LTR11AIPE6327XUMA2
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.05 EUR
10+13.94 EUR
25+13.20 EUR
100+12.20 EUR
250+11.59 EUR
500+11.17 EUR
1000+11.01 EUR
Mindestbestellmenge: 2
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SHIELDBGT60LTR11AIPTOBO1 ProductSelectionGuide_v00_01_EN.pdf
SHIELDBGT60LTR11AIPTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
Produkt ist nicht verfügbar
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94-3250 IRF6604.pdf
94-3250
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6601 irf6601.pdf
IRF6601
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6602 irf6602.pdf
IRF6602
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Produkt ist nicht verfügbar
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BCR521E6327 INFNS16393-1.pdf?t.download=true&u=5oefqw
BCR521E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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DDB6U50N16W1RPB11BPSA1 Infineon-DDB6U50N16W1RP_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017fb22db1fb79c4
DDB6U50N16W1RPB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.85 EUR
30+41.84 EUR
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TLS850C2TEV50BOARDTOBO1 Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41
TLS850C2TEV50BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.76 EUR
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STT3300N18P76XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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BSO065N03MSGXUMA1 BSO065N03MS_G.pdf
BSO065N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200NDC Infineon-TC27xDC_DS_v10-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b292f74ce
Hersteller: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TC277TP64F200SDCKXUMA3 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277TP64F200SDCKXUMA3
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC275TP64F200WDBKXUMA1
TC275TP64F200WDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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TC277TP64F200SCAKXUMA2 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TC277TP64F200SCAKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC275TP64F200WCAKXQMA1
TC275TP64F200WCAKXQMA1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAK-TC275TP-64F200N DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
SAK-TC275TP-64F200N DC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA1
TC277TP64F200SDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA2 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TC277TP64F200SDBKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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