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IPT019N08N5ATMA1 IPT019N08N5ATMA1 Infineon Technologies Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 3405 Stücke:
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3+7.11 EUR
10+4.7 EUR
100+3.34 EUR
500+3.13 EUR
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6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side, Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
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1000+3.54 EUR
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6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side, Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
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3+6.3 EUR
10+4.77 EUR
25+4.38 EUR
100+3.96 EUR
250+3.76 EUR
500+3.74 EUR
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IM323L6G2XKMA1 IM323L6G2XKMA1 Infineon Technologies Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2 Description: CIPOS TINY 600V 15A THREE-PHASE
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Packaging: Tube
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15+11.39 EUR
30+10.91 EUR
105+10.39 EUR
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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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13+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.66 EUR
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MBC410700BPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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C164C18EMCBKXQMA1 C164C18EMCBKXQMA1 Infineon Technologies INFNS03050-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB OTP 80MQFP
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C161SL25MAAFXUMA1 C161SL25MAAFXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Obsolete
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C161SL25MAAFXUMA1 C161SL25MAAFXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Obsolete
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Cut Tape (CT)
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C164CI8EMDBFXUMA1 C164CI8EMDBFXUMA1 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT 64KB OTP 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
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C161SL25MAABXUMA1 C161SL25MAABXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
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C164CI8E25MDBFXQMA1 C164CI8E25MDBFXQMA1 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT 64KB OTP 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tray
Produkt ist nicht verfügbar
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SAB-C164CI-LM CA+ SAB-C164CI-LM CA+ Infineon Technologies C164CI(SI,CL,SL).pdf Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 4K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C164CILMCAKNUMA2 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C164CI8E25MDBKXUMA1 C164CI8E25MDBKXUMA1 Infineon Technologies C164CI(SI,CL,SL).pdf Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Produkt ist nicht verfügbar
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FF900R17ME7B11BPSA1 FF900R17ME7B11BPSA1 Infineon Technologies Infineon-FF900R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f54faf7fd5e9e Description: MEDIUM POWER ECONO
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
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1+450.72 EUR
10+441.68 EUR
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FF225R17ME7B11BPSA1 FF225R17ME7B11BPSA1 Infineon Technologies Infineon-FF225R17ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd018018974af4542e Description: ECONODUAL3 MODULE WITH TRENCHSTO
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 225 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
Operating Temperature: -40°C ~ 175°C (TJ)
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FS25R12KE3GBPSA1 Infineon Technologies Infineon-FS25R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43119f05374 Description: IGBT MODULE 1200V 40A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
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1+107.15 EUR
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FD900R12IP4DVBOSA1 FD900R12IP4DVBOSA1 Infineon Technologies Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7 Description: IGBT MOD 1200V 900A 5100W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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IMD700AQ064X128AAXUMA1 IMD700AQ064X128AAXUMA1 Infineon Technologies Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMD700AQ064X128AAXUMA1 IMD700AQ064X128AAXUMA1 Infineon Technologies Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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3+6.83 EUR
10+5.19 EUR
25+4.78 EUR
100+4.33 EUR
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IPA65R280C6 IPA65R280C6 Infineon Technologies Infineon-IPA65R280C6-DS-v02_00-en.pdf?fileId=db3a30432a7fedfc012a8a787d45589a Description: POWER FIELD-EFFECT TRANSISTOR, 6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BSB012N03LX3 Infineon Technologies INFNS16701-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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335+1.5 EUR
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FP50R12N2T7BPSA2 FP50R12N2T7BPSA2 Infineon Technologies Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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1+129.27 EUR
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BYM300B170DN2HOSA1 BYM300B170DN2HOSA1 Infineon Technologies Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84 Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BAT 54-02V E6327 BAT 54-02V E6327 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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IGLD60R190D1SAUMA1 IGLD60R190D1SAUMA1 Infineon Technologies Description: GAN HV PG-LSON-8
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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F475R12KS4B11BPSA1 F475R12KS4B11BPSA1 Infineon Technologies Infineon-F4_75R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa99f261370 Description: LOW POWER ECONO AG-ECONO2B-211
Part Status: Active
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
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F475R12KS4BPSA1 F475R12KS4BPSA1 Infineon Technologies Infineon-F4_75R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43166255432 Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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EVALM10565DTOBO2 EVALM10565DTOBO2 Infineon Technologies Infineon-AN2016-24_EVAL-M1-05-65D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dccd96f4a Description: EVAL BOARD FOR IRMCK099
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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BSM300GB120DLCE3256HOSA1 Infineon Technologies BSM300GB120DLCS5HOSA1.pdf?t.download=true&u=ovmfp3 Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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SPB80N10L G SPB80N10L G Infineon Technologies SP(I,B,P)80N10L.pdf Description: MOSFET N-CH 100V 80A TO263-3
Vgs(th) (Max) @ Id: 2V @ 2mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3-2
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BB 804 SF3 E6327 BB 804 SF3 E6327 Infineon Technologies BB804.pdf Description: DIODE VAR CAP 18V 50MA SOT-23
Capacitance Ratio: 1.71
Voltage - Peak Reverse (Max): 18 V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Produkt ist nicht verfügbar
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BGSA143ML10E6327XTSA1 BGSA143ML10E6327XTSA1 Infineon Technologies Infineon-BGSA143ML10-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301671d77255a0659 Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Part Status: Active
Supplier Device Package: PG-TSLP-10-2
Topology: Reflective
Frequency Range: 6GHz
Voltage - Supply: 42V
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Features: DC Blocked
Packaging: Cut Tape (CT)
auf Bestellung 7063 Stücke:
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17+1.09 EUR
24+0.75 EUR
27+0.66 EUR
100+0.57 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.47 EUR
2500+0.45 EUR
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IPB180N06S4H1ATMA2 IPB180N06S4H1ATMA2 Infineon Technologies Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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1000+3.13 EUR
2000+2.94 EUR
3000+2.84 EUR
Mindestbestellmenge: 1000 Stücke
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IAUS300N04S4N007ATMA1 IAUS300N04S4N007ATMA1 Infineon Technologies Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c Description: MOSFET_(20V 40V) PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 4V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICBFL02G ICBFL02G Infineon Technologies INFNS14321-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT BALLAST IC
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2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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100+1.05 EUR
250+0.98 EUR
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1000+0.91 EUR
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IRFU024NPBFAKLA1 IRFU024NPBFAKLA1 Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IPP60R600E6XKSA1 IPP60R600E6XKSA1 Infineon Technologies Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2 Description: IPP60R600 - COOLMOS N-CHANNEL PO
Produkt ist nicht verfügbar
 Mindestbestellmenge: 529 Stücke
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TTB6C135N16LOF Infineon Technologies EUPCS02701-1.pdf?t.download=true&u=5oefqw Description: TTB6C135 - BRIDGE RECTIFIER & AC
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ICE5QR0680AGXUMA1 ICE5QR0680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES 12SOIC
Part Status: Not For New Designs
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Bulk
Power (Watts): 77 W
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BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+1.95 EUR
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BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
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BSB165N15NZ3G Infineon Technologies INFNS17233-1.pdf?t.download=true&u=5oefqw Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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BAL99 BAL99 Infineon Technologies INFNS10749-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT23-3 (TO-236)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAL99E6433HTMA1 BAL99E6433HTMA1 Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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6772+0.06 EUR
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TT700N22KOFTIMHPSA1 TT700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK BG-PB60AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
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1+897.72 EUR
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TD700N22KOFTIMHPSA1 TD700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: SCR MODULE 2.2KV 1050A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Produkt ist nicht verfügbar
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F3L50R06W1E3B11BOMA1 F3L50R06W1E3B11BOMA1 Infineon Technologies Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8 Description: IGBT MODULE 600V 75A 175W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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EVALISO1I813TTOBO1 EVALISO1I813TTOBO1 Infineon Technologies Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e Description: EVAL BOARD FOR ISO1I813T
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
Supplied Contents: Board(s)
Utilized IC / Part: ISO1I813T
Type: Interface
Function: Digital Isolator
Packaging: Bulk
Secondary Attributes: Parallel/Serial Interface(s)
Contents: Board(s)
auf Bestellung 1 Stücke:
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1+213.26 EUR
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IPW65R230CFD7AXKSA1 IPW65R230CFD7AXKSA1 Infineon Technologies Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d Description: 650V COOLMOS CFD7A SJ POWER DEVI
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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3+7.08 EUR
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TDA5225CXUMA1 Infineon Technologies Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f Description: TDA5225CXU - RF RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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178+2.53 EUR
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CHL8212-02CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 28VQFN
Part Status: Obsolete
Clock Sync: No
Output Phases: 2
Serial Interfaces: I²C
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-28-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 3
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TR10124595NOSA1 Infineon Technologies Description: TR101 W24595
Produkt ist nicht verfügbar
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TR10128001NOSA1 Infineon Technologies Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TR10140962NOSA1 Infineon Technologies Description: POWER MODULE IGBT
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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REFICL8810LED42WPSRTOBO1 REFICL8810LED42WPSRTOBO1 Infineon Technologies Infineon-Reference_board_REF_ICL8810_LED_42W_PSR-ApplicationNotes-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a13c3601c1178 Description: EVAL BOARD FOR ICL8810
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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1+88.55 EUR
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IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
IPT019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
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AnzahlPreis
3+7.11 EUR
10+4.7 EUR
100+3.34 EUR
500+3.13 EUR
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6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side, Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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AnzahlPreis
1000+3.54 EUR
Mindestbestellmenge: 1000 Stücke
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6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side, Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1195 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.3 EUR
10+4.77 EUR
25+4.38 EUR
100+3.96 EUR
250+3.76 EUR
500+3.74 EUR
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IM323L6G2XKMA1 Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2
IM323L6G2XKMA1
Hersteller: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Packaging: Tube
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.39 EUR
15+11.39 EUR
30+10.91 EUR
105+10.39 EUR
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 6294 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.27 EUR
13+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.66 EUR
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MBC410700BPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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C164C18EMCBKXQMA1 INFNS03050-1.pdf?t.download=true&u=5oefqw
C164C18EMCBKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
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C161SL25MAAFXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Obsolete
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C161SL25MAAFXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Obsolete
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke:
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AnzahlPreis
2+15.98 EUR
Mindestbestellmenge: 2 Stücke
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C164CI8EMDBFXUMA1 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
C164CI8EMDBFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
auf Bestellung 1375 Stücke:
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AnzahlPreis
6+92.1 EUR
Mindestbestellmenge: 6 Stücke
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C161SL25MAABXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+34.65 EUR
Mindestbestellmenge: 13 Stücke
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C164CI8E25MDBFXQMA1 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
C164CI8E25MDBFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tray
Produkt ist nicht verfügbar
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SAB-C164CI-LM CA+ C164CI(SI,CL,SL).pdf
SAB-C164CI-LM CA+
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 4K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C164CILMCAKNUMA2 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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C164CI8E25MDBKXUMA1 C164CI(SI,CL,SL).pdf
C164CI8E25MDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 59
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x10b
Core Processor: C166
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Produkt ist nicht verfügbar
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FF900R17ME7B11BPSA1 Infineon-FF900R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f54faf7fd5e9e
FF900R17ME7B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+450.72 EUR
10+441.68 EUR
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FF225R17ME7B11BPSA1 Infineon-FF225R17ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd018018974af4542e
FF225R17ME7B11BPSA1
Hersteller: Infineon Technologies
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 225 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
Operating Temperature: -40°C ~ 175°C (TJ)
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+235 EUR
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FS25R12KE3GBPSA1 Infineon-FS25R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43119f05374
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 40A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+107.15 EUR
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FD900R12IP4DVBOSA1 Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7
FD900R12IP4DVBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+875.11 EUR
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IMD700AQ064X128AAXUMA1 Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a
IMD700AQ064X128AAXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IMD700AQ064X128AAXUMA1 Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a
IMD700AQ064X128AAXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.83 EUR
10+5.19 EUR
25+4.78 EUR
100+4.33 EUR
Mindestbestellmenge: 3 Stücke
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IPA65R280C6 Infineon-IPA65R280C6-DS-v02_00-en.pdf?fileId=db3a30432a7fedfc012a8a787d45589a
IPA65R280C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BSB012N03LX3 INFNS16701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3581 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
335+1.5 EUR
Mindestbestellmenge: 335 Stücke
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FP50R12N2T7BPSA2 Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c
FP50R12N2T7BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+129.27 EUR
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BYM300B170DN2HOSA1 Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84
BYM300B170DN2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+266.88 EUR
Mindestbestellmenge: 2 Stücke
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BAT 54-02V E6327 BAT54_Series.pdf
BAT 54-02V E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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IGLD60R190D1SAUMA1
IGLD60R190D1SAUMA1
Hersteller: Infineon Technologies
Description: GAN HV PG-LSON-8
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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F475R12KS4B11BPSA1 Infineon-F4_75R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa99f261370
F475R12KS4B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Part Status: Active
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+144.64 EUR
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F475R12KS4BPSA1 Infineon-F4_75R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43166255432
F475R12KS4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+160.42 EUR
15+120.93 EUR
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EVALM10565DTOBO2 Infineon-AN2016-24_EVAL-M1-05-65D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dccd96f4a
EVALM10565DTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRMCK099
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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BSM300GB120DLCE3256HOSA1 BSM300GB120DLCS5HOSA1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+352.44 EUR
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SPB80N10L G SP(I,B,P)80N10L.pdf
SPB80N10L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO263-3
Vgs(th) (Max) @ Id: 2V @ 2mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3-2
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BB 804 SF3 E6327 BB804.pdf
BB 804 SF3 E6327
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Capacitance Ratio: 1.71
Voltage - Peak Reverse (Max): 18 V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Produkt ist nicht verfügbar
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BGSA143ML10E6327XTSA1 Infineon-BGSA143ML10-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301671d77255a0659
BGSA143ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Part Status: Active
Supplier Device Package: PG-TSLP-10-2
Topology: Reflective
Frequency Range: 6GHz
Voltage - Supply: 42V
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Features: DC Blocked
Packaging: Cut Tape (CT)
auf Bestellung 7063 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.09 EUR
24+0.75 EUR
27+0.66 EUR
100+0.57 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.47 EUR
2500+0.45 EUR
Mindestbestellmenge: 17 Stücke
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
IPB180N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+3.13 EUR
2000+2.94 EUR
3000+2.84 EUR
Mindestbestellmenge: 1000 Stücke
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IAUS300N04S4N007ATMA1 Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c
IAUS300N04S4N007ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 4V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICBFL02G INFNS14321-1.pdf?t.download=true&u=5oefqw
ICBFL02G
Hersteller: Infineon Technologies
Description: FLUORESCENT BALLAST IC
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
182+2.71 EUR
Mindestbestellmenge: 182 Stücke
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2ED2103S06FXUMA1 Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551
2ED2103S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1955 Stücke
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2ED2103S06FXUMA1 Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551
2ED2103S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2436 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.81 EUR
14+1.31 EUR
25+1.18 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.91 EUR
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
IRFU024NPBFAKLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IPP60R600E6XKSA1 Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2
IPP60R600E6XKSA1
Hersteller: Infineon Technologies
Description: IPP60R600 - COOLMOS N-CHANNEL PO
Produkt ist nicht verfügbar
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TTB6C135N16LOF EUPCS02701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TTB6C135 - BRIDGE RECTIFIER & AC
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+346.57 EUR
Mindestbestellmenge: 2 Stücke
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ICE5QR0680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Part Status: Not For New Designs
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Bulk
Power (Watts): 77 W
auf Bestellung 1033 Stücke:
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AnzahlPreis
205+2.46 EUR
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BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.95 EUR
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BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
auf Bestellung 5000 Stücke:
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BSB165N15NZ3G INFNS17233-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 4012 Stücke:
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AnzahlPreis
156+3.08 EUR
Mindestbestellmenge: 156 Stücke
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BAL99 INFNS10749-1.pdf?t.download=true&u=5oefqw
BAL99
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT23-3 (TO-236)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8959+0.053 EUR
Mindestbestellmenge: 8959 Stücke
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BAL99E6433HTMA1 bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6
BAL99E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 36786 Stücke:
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AnzahlPreis
6772+0.06 EUR
Mindestbestellmenge: 6772 Stücke
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TT700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TT700N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+897.72 EUR
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TD700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TD700N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 1050A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Produkt ist nicht verfügbar
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F3L50R06W1E3B11BOMA1 Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8
F3L50R06W1E3B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 75A 175W
Produkt ist nicht verfügbar
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EVALISO1I813TTOBO1 Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e
EVALISO1I813TTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISO1I813T
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
Supplied Contents: Board(s)
Utilized IC / Part: ISO1I813T
Type: Interface
Function: Digital Isolator
Packaging: Bulk
Secondary Attributes: Parallel/Serial Interface(s)
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+213.26 EUR
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IPW65R230CFD7AXKSA1 Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d
IPW65R230CFD7AXKSA1
Hersteller: Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.08 EUR
Mindestbestellmenge: 3 Stücke
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TDA5225CXUMA1 Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f
Hersteller: Infineon Technologies
Description: TDA5225CXU - RF RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
auf Bestellung 143699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
178+2.53 EUR
Mindestbestellmenge: 178 Stücke
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CHL8212-02CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK 28VQFN
Part Status: Obsolete
Clock Sync: No
Output Phases: 2
Serial Interfaces: I²C
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-28-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 3
Produkt ist nicht verfügbar
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TR10124595NOSA1
Hersteller: Infineon Technologies
Description: TR101 W24595
Produkt ist nicht verfügbar
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TR10128001NOSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TR10140962NOSA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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REFICL8810LED42WPSRTOBO1 Infineon-Reference_board_REF_ICL8810_LED_42W_PSR-ApplicationNotes-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a13c3601c1178
REFICL8810LED42WPSRTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL8810
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+88.55 EUR
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