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TLE4290G Infineon Technologies Infineon-TLE4290-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f85822a1f7b Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 230 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Power Good
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
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2EDN7534FXTMA1 2EDN7534FXTMA1 Infineon Technologies Infineon-2EDN7534F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc2384b2f4c3a Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7534FXTMA1 2EDN7534FXTMA1 Infineon Technologies Infineon-2EDN7534F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc2384b2f4c3a Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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100+0.57 EUR
250+0.53 EUR
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FD1000R33HE3KBOSA1 Infineon Technologies Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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FS500R17OE4DPBOSA1 FS500R17OE4DPBOSA1 Infineon Technologies Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26 Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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FS500R17OE4DPBOSA1 FS500R17OE4DPBOSA1 Infineon Technologies Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26 Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Produkt ist nicht verfügbar
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TDA5225HTXUMA1 Infineon Technologies Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f Description: TDA5225HTXU - RF RECEIVER
Packaging: Bulk
Produkt ist nicht verfügbar
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TDA5221XUMA1 TDA5221XUMA1 Infineon Technologies Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3 Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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TLE42672GATMA2CT TLE42672GATMA2CT Infineon Technologies INFNS28001-1.pdf?t.download=true&u=ovmfp3 Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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CY95F108AKSPFV-GSE1 CY95F108AKSPFV-GSE1 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 64LQFP
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BTS133AKSA1 BTS133AKSA1 Infineon Technologies Description: IC PWR SWITCH
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPD12CN10NG IPD12CN10NG Infineon Technologies INFNS30235-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
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FF300R12KE3B2HOSA1 Infineon Technologies Infineon-FF300R12KE3-DS-v03_02-en_cn.pdf?fileId=db3a30433dd42dcf013dd4fda49101e0 Description: MEDIUM POWER 62MM
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BTS40K21EJCXUMA1 BTS40K21EJCXUMA1 Infineon Technologies BTS40k2-1EJC.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
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PEB333HTV2.2 Infineon Technologies Description: VINETIC VOICE OVER IP PROCESSOR
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IPW65R060CFD7XKSA1 IPW65R060CFD7XKSA1 Infineon Technologies Infineon-IPW65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f43b74492 Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R600PFD7ATMA1 IPLK60R600PFD7ATMA1 Infineon Technologies Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86 Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 Infineon Technologies Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8 Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101
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5000+0.52 EUR
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IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 Infineon Technologies Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8 Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101
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100+0.88 EUR
500+0.69 EUR
1000+0.63 EUR
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IM323L6GXKMA1 IM323L6GXKMA1 Infineon Technologies Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2 Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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30+10.91 EUR
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BSC0303LSATMA1 BSC0303LSATMA1 Infineon Technologies Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
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XC2361E136F128LRAAKXQMA1 XC2361E136F128LRAAKXQMA1 Infineon Technologies Infineon-xc236[17]e-DS-v01_03-EN.pdf?fileId=db3a304333227b5e0133405dda741ce6 Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
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IDD03SG60CXTMA2 IDD03SG60CXTMA2 Infineon Technologies Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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BGA825L6SE6327XTSA1 BGA825L6SE6327XTSA1 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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BGA825L6SE6327XTSA1 BGA825L6SE6327XTSA1 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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BGS15MU14E6327XTSA1 BGS15MU14E6327XTSA1 Infineon Technologies Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
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BGS15MU14E6327XTSA1 BGS15MU14E6327XTSA1 Infineon Technologies Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
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BGS17GA14E6327XTSA1 Infineon Technologies Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759 Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
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PBL386212QNA Infineon Technologies ERICS00541-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2QNT-INF Infineon Technologies Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
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PBL38621/2QNT Infineon Technologies INFNS17910-1.pdf?t.download=true&u=5oefqw Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
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IDW40G65C5B IDW40G65C5B Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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TZ500N16KOFHPSA1 TZ500N16KOFHPSA1 Infineon Technologies Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21 Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
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TZ500N14KOFHPSA1 TZ500N14KOFHPSA1 Infineon Technologies TZ500N.pdf Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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TZ600N14KOFHPSA1 TZ600N14KOFHPSA1 Infineon Technologies TZ600N.pdf Description: SCR MODULE 1.6KV 1050A MODULE
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REFFRIDGED111TRC2SLTOBO1 REFFRIDGED111TRC2SLTOBO1 Infineon Technologies Infineon-UG-2021-31_REF_Fridge_D111T_RC2_SL_V1.1_EN-UserManual-v01_01-EN.pdf?fileId=8ac78c8c7e7124d1017ef751503b491d Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
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TLV49645TBXALA1 TLV49645TBXALA1 Infineon Technologies INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLI49631MXTSA1 TLI49631MXTSA1 Infineon Technologies Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7 Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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41+0.44 EUR
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BSM400GA170DLS Infineon Technologies EUPCS00266-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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IPB80P03P4L07ATMA2 IPB80P03P4L07ATMA2 Infineon Technologies Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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KITIM69D127V11FLEXTOBO1 KITIM69D127V11FLEXTOBO1 Infineon Technologies Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
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IFX2931GV33 IFX2931GV33 Infineon Technologies INFNS16937-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
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IFX8117MEV33 IFX8117MEV33 Infineon Technologies INFNS15203-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
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TLE4954CE4807BAMA1 Infineon Technologies 001651793.pdf Description: SPEED & CURRENT SENSORS
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BAV 99 E6433 BAV 99 E6433 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SOT23
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ISP06P008NSATMA1 Infineon Technologies Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
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5000+0.73 EUR
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
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12+1.55 EUR
100+1.15 EUR
500+0.97 EUR
1000+0.9 EUR
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IRFI7446GPBF IRFI7446GPBF Infineon Technologies irfi7446gpbf.pdf Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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10+1.87 EUR
11+1.68 EUR
100+1.31 EUR
500+1.08 EUR
1000+0.85 EUR
2000+0.79 EUR
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TLF4949EJ TLF4949EJ Infineon Technologies Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29 Description: IC REG LINEAR VOLT TLF4949
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737+0.72 EUR
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BSF083N03LQG Infineon Technologies INFNS15764-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
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BSC205N10LSG BSC205N10LSG Infineon Technologies INFNS16205-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BSC029N025SG BSC029N025SG Infineon Technologies INFNS13651-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
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BSC886N03LSGATMA1 BSC886N03LSGATMA1 Infineon Technologies BSC886N03LS_G.pdf Description: MOSFET N-CH 30V 13A/65A TDSON
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Mindestbestellmenge: 1205
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BAS70E6327 BAS70E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 107857 Stücke:
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IPL65R130CFD7AUMA1 IPL65R130CFD7AUMA1 Infineon Technologies Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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TLE4290G Infineon-TLE4290-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f85822a1f7b
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 230 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Power Good
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
auf Bestellung 137785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
217+2.45 EUR
Mindestbestellmenge: 217
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2EDN7534FXTMA1 Infineon-2EDN7534F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc2384b2f4c3a
2EDN7534FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7534FXTMA1 Infineon-2EDN7534F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc2384b2f4c3a
2EDN7534FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
25+0.73 EUR
27+0.66 EUR
100+0.57 EUR
250+0.53 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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FD1000R33HE3KBOSA1 Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Produkt ist nicht verfügbar
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FS500R17OE4DPBOSA1 Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26
FS500R17OE4DPBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1160.97 EUR
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FS500R17OE4DPBOSA1 Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26
FS500R17OE4DPBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Produkt ist nicht verfügbar
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TDA5225HTXUMA1 Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f
Hersteller: Infineon Technologies
Description: TDA5225HTXU - RF RECEIVER
Packaging: Bulk
Produkt ist nicht verfügbar
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TDA5221XUMA1 Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3
TDA5221XUMA1
Hersteller: Infineon Technologies
Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
auf Bestellung 34147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
184+2.46 EUR
Mindestbestellmenge: 184
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TLE42672GATMA2CT INFNS28001-1.pdf?t.download=true&u=ovmfp3
TLE42672GATMA2CT
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
213+2.13 EUR
Mindestbestellmenge: 213
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CY95F108AKSPFV-GSE1
CY95F108AKSPFV-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 64LQFP
Produkt ist nicht verfügbar
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BTS133AKSA1
BTS133AKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPD12CN10NG INFNS30235-1.pdf?t.download=true&u=5oefqw
IPD12CN10NG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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FF300R12KE3B2HOSA1 Infineon-FF300R12KE3-DS-v03_02-en_cn.pdf?fileId=db3a30433dd42dcf013dd4fda49101e0
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+228.92 EUR
Mindestbestellmenge: 3
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BTS40K21EJCXUMA1 BTS40k2-1EJC.pdf
BTS40K21EJCXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Produkt ist nicht verfügbar
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PEB333HTV2.2
Hersteller: Infineon Technologies
Description: VINETIC VOICE OVER IP PROCESSOR
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+16.73 EUR
Mindestbestellmenge: 30
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IPW65R060CFD7XKSA1 Infineon-IPW65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f43b74492
IPW65R060CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R600PFD7ATMA1 Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86
IPLK60R600PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IAUC41N06S5N102ATMA1 Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8
IAUC41N06S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
10000+0.49 EUR
Mindestbestellmenge: 5000
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IAUC41N06S5N102ATMA1 Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8
IAUC41N06S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 14486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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IM323L6GXKMA1 Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2
IM323L6GXKMA1
Hersteller: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.39 EUR
15+11.39 EUR
30+10.91 EUR
105+10.39 EUR
Mindestbestellmenge: 2
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BSC0303LSATMA1 Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25
BSC0303LSATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Produkt ist nicht verfügbar
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XC2361E136F128LRAAKXQMA1 Infineon-xc236[17]e-DS-v01_03-EN.pdf?fileId=db3a304333227b5e0133405dda741ce6
XC2361E136F128LRAAKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
Produkt ist nicht verfügbar
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IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
IDD03SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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BGA825L6SE6327XTSA1 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA825L6SE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA825L6SE6327XTSA1 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA825L6SE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGS15MU14E6327XTSA1 Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f
BGS15MU14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Produkt ist nicht verfügbar
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BGS15MU14E6327XTSA1 Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f
BGS15MU14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Produkt ist nicht verfügbar
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BGS17GA14E6327XTSA1 Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1065+0.47 EUR
Mindestbestellmenge: 1065
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PBL386212QNA ERICS00541-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
172+2.81 EUR
Mindestbestellmenge: 172
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PBL38621/2QNT-INF
Hersteller: Infineon Technologies
Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
Produkt ist nicht verfügbar
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PBL38621/2QNT INFNS17910-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
41+11.86 EUR
Mindestbestellmenge: 41
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IDW40G65C5B Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5B
Hersteller: Infineon Technologies
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+16.57 EUR
Mindestbestellmenge: 4500
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Output Type: Digital
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Sensor Type: Radar Sensor
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.35 EUR
10+22.94 EUR
25+21.76 EUR
100+20.14 EUR
250+19.17 EUR
500+18.48 EUR
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TZ500N16KOFHPSA1 Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21
TZ500N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+328.63 EUR
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TZ500N14KOFHPSA1 TZ500N.pdf
TZ500N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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TZ600N14KOFHPSA1 TZ600N.pdf
TZ600N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Produkt ist nicht verfügbar
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REFFRIDGED111TRC2SLTOBO1 Infineon-UG-2021-31_REF_Fridge_D111T_RC2_SL_V1.1_EN-UserManual-v01_01-EN.pdf?fileId=8ac78c8c7e7124d1017ef751503b491d
REFFRIDGED111TRC2SLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+313.12 EUR
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TLV49645TBXALA1 INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw
TLV49645TBXALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLI49631MXTSA1 Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7
TLI49631MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
36+0.5 EUR
38+0.47 EUR
41+0.44 EUR
50+0.42 EUR
100+0.39 EUR
500+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 31
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BSM400GA170DLS EUPCS00266-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+205 EUR
Mindestbestellmenge: 2
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IPB80P03P4L07ATMA2 Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd
IPB80P03P4L07ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KITIM69D127V11FLEXTOBO1
KITIM69D127V11FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.2 EUR
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IFX2931GV33 INFNS16937-1.pdf?t.download=true&u=5oefqw
IFX2931GV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1648+0.32 EUR
Mindestbestellmenge: 1648
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IFX8117MEV33 INFNS15203-1.pdf?t.download=true&u=5oefqw
IFX8117MEV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1501+0.37 EUR
Mindestbestellmenge: 1501
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TLE4954CE4807BAMA1 001651793.pdf
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.19 EUR
Mindestbestellmenge: 152
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BAV 99 E6433 bav99series.pdf
BAV 99 E6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Produkt ist nicht verfügbar
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ISP06P008NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.73 EUR
Mindestbestellmenge: 5000
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
12+1.55 EUR
100+1.15 EUR
500+0.97 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
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IRFI7446GPBF irfi7446gpbf.pdf
IRFI7446GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
338+1.43 EUR
Mindestbestellmenge: 338
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BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Produkt ist nicht verfügbar
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BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
auf Bestellung 4785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
11+1.68 EUR
100+1.31 EUR
500+1.08 EUR
1000+0.85 EUR
2000+0.79 EUR
Mindestbestellmenge: 10
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TLF4949EJ Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29
TLF4949EJ
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
737+0.72 EUR
Mindestbestellmenge: 737
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BSF083N03LQG INFNS15764-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
717+0.71 EUR
Mindestbestellmenge: 717
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BSC205N10LSG INFNS16205-1.pdf?t.download=true&u=5oefqw
BSC205N10LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 5751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
662+0.75 EUR
Mindestbestellmenge: 662
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BSC029N025SG INFNS13651-1.pdf?t.download=true&u=5oefqw
BSC029N025SG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
402+1.32 EUR
Mindestbestellmenge: 402
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BSC886N03LSGATMA1 BSC886N03LS_G.pdf
BSC886N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
auf Bestellung 8585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1205+0.44 EUR
Mindestbestellmenge: 1205
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BAS70E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70E6327
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 107857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3893+0.14 EUR
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IPL65R130CFD7AUMA1 Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd
IPL65R130CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
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