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IR3629MTRPBF IR3629MTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
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100+1.38 EUR
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MB95F654LNPFT-G-SNE2 MB95F654LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
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MB95F654LNPFT-G-SNE2 MB95F654LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
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MB95F652LNPFT-G-SNE2 MB95F652LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
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MB95F652LNPFT-G-SNE2 MB95F652LNPFT-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
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MB95F776LNPMC1-G-SNE2 MB95F776LNPMC1-G-SNE2 Infineon Technologies Description: IC MCU 8BIT 36KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 58
DigiKey Programmable: Not Verified
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CY95F776LNPMC1-G-UNE2 CY95F776LNPMC1-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 36KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 58
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 Infineon Technologies Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
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BBY53-03WE6327HTSA1 BBY53-03WE6327HTSA1 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: DIODE TUNING 6V 20MA SOD-323
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BAT54-03WE6327 BAT54-03WE6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA SOD323-2
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BBY58-03WE6327 BBY58-03WE6327 Infineon Technologies INFNS11658-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
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BBY53-03WE6327 BBY53-03WE6327 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: BBY53 - VARACTOR DIODE
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IM67D130AXTSA2 IM67D130AXTSA2 Infineon Technologies Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 28 Hz ~ 20 kHz
Grade: Automotive
Qualification: AEC-Q103
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IM67D130AXTSA2 IM67D130AXTSA2 Infineon Technologies Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 28 Hz ~ 20 kHz
Grade: Automotive
Qualification: AEC-Q103
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MB95F856KPFT-G-SNE2 MB95F856KPFT-G-SNE2 Infineon Technologies download Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB95F318E-CHIP32 Infineon Technologies MB95310L_370L_RevA_4-6-16.pdf Description: IC MCU 8BIT 60KB FLASH
Packaging: Bulk
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 1.98K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Number of I/O: 71
DigiKey Programmable: Not Verified
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CY7C109B-12ZXC CY7C109B-12ZXC Infineon Technologies CY7C109B%2C%20CY7C1009B.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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REFSHA35WRC2SYSTOBO1 REFSHA35WRC2SYSTOBO1 Infineon Technologies Infineon-UG_REF-SHA35WRC2SYS-UserManual-v03_01-EN.pdf?fileId=8ac78c8c7e7124d1017efc91bc2a06f0 Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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BSS139IXTMA1 BSS139IXTMA1 Infineon Technologies Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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FP150R12N3T7BPSA1 FP150R12N3T7BPSA1 Infineon Technologies Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137 Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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IFF450B12ME4PB11BPSA1 IFF450B12ME4PB11BPSA1 Infineon Technologies Infineon-IFF450B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab243df000f Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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FZ2400R12HE4B9HDSA2 Infineon Technologies Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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CY8CTMA884LTI-13T CY8CTMA884LTI-13T Infineon Technologies Marking_Format_RevJB_Jul2017.pdf Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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CY8CTMA884AA-23 CY8CTMA884AA-23 Infineon Technologies Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPA60R380P6 Infineon Technologies INFNS28174-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
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IAUA170N10S5N031AUMA1 IAUA170N10S5N031AUMA1 Infineon Technologies Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IPT019N08N5ATMA1 IPT019N08N5ATMA1 Infineon Technologies Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
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6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6ED2230S12TXUMA1 6ED2230S12TXUMA1 Infineon Technologies Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 794 Stücke:
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3+6.21 EUR
10+4.7 EUR
25+4.32 EUR
100+3.91 EUR
250+3.71 EUR
500+3.59 EUR
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IM323L6G2XKMA1 IM323L6G2XKMA1 Infineon Technologies Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2 Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
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105+10.39 EUR
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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 7172 Stücke:
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16+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
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MBC410700BPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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C164C18EMCBKXQMA1 C164C18EMCBKXQMA1 Infineon Technologies INFNS03050-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB OTP 80MQFP
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C161SL25MAAFXUMA1 C161SL25MAAFXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C161SL25MAAFXUMA1 C161SL25MAAFXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Cut Tape (CT)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 3 Stücke:
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2+15.98 EUR
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C164CI8EMDBFXUMA1 C164CI8EMDBFXUMA1 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
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C161SL25MAABXUMA1 C161SL25MAABXUMA1 Infineon Technologies c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
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15+32.83 EUR
Mindestbestellmenge: 15
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C164CI8E25MDBFXQMA1 C164CI8E25MDBFXQMA1 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C164CI-LM CA+ SAB-C164CI-LM CA+ Infineon Technologies C164CI(SI,CL,SL).pdf Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CILMCAKNUMA2 Infineon Technologies Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CI8E25MDBKXUMA1 C164CI8E25MDBKXUMA1 Infineon Technologies C164CI(SI,CL,SL).pdf Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF900R17ME7B11BPSA1 FF900R17ME7B11BPSA1 Infineon Technologies Infineon-FF900R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f54faf7fd5e9e Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
auf Bestellung 10 Stücke:
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1+450.72 EUR
10+441.68 EUR
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FF225R17ME7B11BPSA1 FF225R17ME7B11BPSA1 Infineon Technologies Infineon-FF225R17ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd018018974af4542e Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
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1+235 EUR
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FS25R12KE3GBPSA1 Infineon Technologies Infineon-FS25R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43119f05374 Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
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1+100.04 EUR
15+75.57 EUR
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FD900R12IP4DVBOSA1 FD900R12IP4DVBOSA1 Infineon Technologies Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7 Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 112 Stücke:
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1+875.11 EUR
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IMD700AQ064X128AAXUMA1 IMD700AQ064X128AAXUMA1 Infineon Technologies Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMD700AQ064X128AAXUMA1 IMD700AQ064X128AAXUMA1 Infineon Technologies Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 1201 Stücke:
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3+6.97 EUR
10+5.29 EUR
25+4.87 EUR
100+4.41 EUR
250+4.19 EUR
500+4.06 EUR
1000+3.95 EUR
Mindestbestellmenge: 3
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IPA65R280C6 IPA65R280C6 Infineon Technologies Infineon-IPA65R280C6-DS-v02_00-en.pdf?fileId=db3a30432a7fedfc012a8a787d45589a Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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BSB012N03LX3 Infineon Technologies INFNS16701-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3581 Stücke:
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335+1.5 EUR
Mindestbestellmenge: 335
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FP50R12N2T7BPSA2 FP50R12N2T7BPSA2 Infineon Technologies Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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1+129.4 EUR
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BYM300B170DN2HOSA1 BYM300B170DN2HOSA1 Infineon Technologies Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84 Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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2+266.88 EUR
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BAT 54-02V E6327 BAT 54-02V E6327 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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IGLD60R190D1SAUMA1 IGLD60R190D1SAUMA1 Infineon Technologies Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
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F475R12KS4B11BPSA1 F475R12KS4B11BPSA1 Infineon Technologies Infineon-F4_75R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa99f261370 Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+144.64 EUR
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F475R12KS4BPSA1 F475R12KS4BPSA1 Infineon Technologies Infineon-F4_75R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43166255432 Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 12 Stücke:
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1+150.02 EUR
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EVALM10565DTOBO2 EVALM10565DTOBO2 Infineon Technologies Infineon-AN2016-24_EVAL-M1-05-65D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dccd96f4a Description: EVAL BOARD FOR IRMCK099
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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BSM300GB120DLCE3256HOSA1 Infineon Technologies BSM300GB120DLCS5HOSA1.pdf?t.download=true&u=ovmfp3 Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
1+353.71 EUR
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SPB80N10L G SPB80N10L G Infineon Technologies SP(I,B,P)80N10L.pdf Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BB 804 SF3 E6327 BB 804 SF3 E6327 Infineon Technologies BB804.pdf Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Produkt ist nicht verfügbar
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IR3629MTRPBF fundamentals-of-power-semiconductors
IR3629MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
auf Bestellung 5973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.62 EUR
25+1.52 EUR
100+1.38 EUR
Mindestbestellmenge: 10
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MB95F654LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 6464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
Mindestbestellmenge: 15
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MB95F654LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F652LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F652LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 9588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
Mindestbestellmenge: 15
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MB95F652LNPFT-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F652LNPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F776LNPMC1-G-SNE2
MB95F776LNPMC1-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 58
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F776LNPMC1-G-UNE2
CY95F776LNPMC1-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 58
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS03MR12A6MA1BBPSA1 Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c
FS03MR12A6MA1BBPSA1
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3359.4 EUR
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BBY53-03WE6327HTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-03WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 6V 20MA SOD-323
auf Bestellung 61312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2275+0.21 EUR
Mindestbestellmenge: 2275
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BAT54-03WE6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-03WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOD323-2
Produkt ist nicht verfügbar
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BBY58-03WE6327 INFNS11658-1.pdf?t.download=true&u=5oefqw
BBY58-03WE6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
Produkt ist nicht verfügbar
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BBY53-03WE6327 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY53-03WE6327
Hersteller: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
auf Bestellung 2450 Stücke:
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Anzahl Preis
2450+0.21 EUR
Mindestbestellmenge: 2450
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IM67D130AXTSA2 Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf
IM67D130AXTSA2
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 28 Hz ~ 20 kHz
Grade: Automotive
Qualification: AEC-Q103
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.64 EUR
2000+1.61 EUR
Mindestbestellmenge: 1000
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IM67D130AXTSA2 Infineon-IM67D130A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017ac41305f054bf
IM67D130AXTSA2
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 28 Hz ~ 20 kHz
Grade: Automotive
Qualification: AEC-Q103
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+2.47 EUR
25+2.28 EUR
50+2.14 EUR
100+2.01 EUR
250+1.97 EUR
Mindestbestellmenge: 6
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MB95F856KPFT-G-SNE2 download
MB95F856KPFT-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 3071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
Mindestbestellmenge: 30
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MB95F318E-CHIP32 MB95310L_370L_RevA_4-6-16.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH
Packaging: Bulk
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 1.98K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Number of I/O: 71
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C109B-12ZXC CY7C109B%2C%20CY7C1009B.pdf
CY7C109B-12ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
132+3.84 EUR
Mindestbestellmenge: 132
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REFSHA35WRC2SYSTOBO1 Infineon-UG_REF-SHA35WRC2SYS-UserManual-v03_01-EN.pdf?fileId=8ac78c8c7e7124d1017efc91bc2a06f0
REFSHA35WRC2SYSTOBO1
Hersteller: Infineon Technologies
Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+158.14 EUR
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BSS139IXTMA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
BSS139IXTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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FP150R12N3T7BPSA1 Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137
FP150R12N3T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+272.75 EUR
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IFF450B12ME4PB11BPSA1 Infineon-IFF450B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab243df000f
IFF450B12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FZ2400R12HE4B9HDSA2 Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1475.65 EUR
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CY8CTMA884LTI-13T Marking_Format_RevJB_Jul2017.pdf
CY8CTMA884LTI-13T
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+6.83 EUR
Mindestbestellmenge: 2000
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CY8CTMA884AA-23
CY8CTMA884AA-23
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+22.67 EUR
Mindestbestellmenge: 24
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IPA60R380P6 INFNS28174-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
313+1.85 EUR
Mindestbestellmenge: 313
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IAUA170N10S5N031AUMA1 Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32
IAUA170N10S5N031AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
IPT019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.94 EUR
10+5.96 EUR
100+4.26 EUR
500+3.54 EUR
1000+3.35 EUR
Mindestbestellmenge: 2
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6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6ED2230S12TXUMA1 Infineon-6ED2230S12T-DataSheet-v01_02-EN.pdf?fileId=5546d4626cb27db2016d053ae13a11ad
6ED2230S12TXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.7 EUR
25+4.32 EUR
100+3.91 EUR
250+3.71 EUR
500+3.59 EUR
Mindestbestellmenge: 3
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IM323L6G2XKMA1 Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2
IM323L6G2XKMA1
Hersteller: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.39 EUR
15+11.39 EUR
30+10.91 EUR
105+10.39 EUR
Mindestbestellmenge: 2
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 7172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
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MBC410700BPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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C164C18EMCBKXQMA1 INFNS03050-1.pdf?t.download=true&u=5oefqw
C164C18EMCBKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Produkt ist nicht verfügbar
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C161SL25MAAFXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C161SL25MAAFXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Cut Tape (CT)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.98 EUR
Mindestbestellmenge: 2
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C164CI8EMDBFXUMA1 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
C164CI8EMDBFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+92.1 EUR
Mindestbestellmenge: 6
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C161SL25MAABXUMA1 c161s_ds_v1.0_200311.pdf?folderId=db3a304412b407950112b43a56c8703a&fileId=db3a304412b407950112b43a5758703b
C161SL25MAABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 5849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+32.83 EUR
Mindestbestellmenge: 15
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C164CI8E25MDBFXQMA1 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
C164CI8E25MDBFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C164CI-LM CA+ C164CI(SI,CL,SL).pdf
SAB-C164CI-LM CA+
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CILMCAKNUMA2 Infineon-C164CI-DS-v02_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b41e161331d0&ack=t
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CI8E25MDBKXUMA1 C164CI(SI,CL,SL).pdf
C164CI8E25MDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF900R17ME7B11BPSA1 Infineon-FF900R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f54faf7fd5e9e
FF900R17ME7B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+450.72 EUR
10+441.68 EUR
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FF225R17ME7B11BPSA1 Infineon-FF225R17ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd018018974af4542e
FF225R17ME7B11BPSA1
Hersteller: Infineon Technologies
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+235 EUR
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FS25R12KE3GBPSA1 Infineon-FS25R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43119f05374
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.04 EUR
15+75.57 EUR
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FD900R12IP4DVBOSA1 Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7
FD900R12IP4DVBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+875.11 EUR
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IMD700AQ064X128AAXUMA1 Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a
IMD700AQ064X128AAXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMD700AQ064X128AAXUMA1 Infineon-IMD70xA-DS-v01_00-EN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018023cbef1f4a9a
IMD700AQ064X128AAXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 1201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+5.29 EUR
25+4.87 EUR
100+4.41 EUR
250+4.19 EUR
500+4.06 EUR
1000+3.95 EUR
Mindestbestellmenge: 3
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IPA65R280C6 Infineon-IPA65R280C6-DS-v02_00-en.pdf?fileId=db3a30432a7fedfc012a8a787d45589a
IPA65R280C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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BSB012N03LX3 INFNS16701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
335+1.5 EUR
Mindestbestellmenge: 335
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FP50R12N2T7BPSA2 Infineon-FP50R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0b105656718c
FP50R12N2T7BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+129.4 EUR
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BYM300B170DN2HOSA1 Infineon-BYM300B170DN2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc8994d84
BYM300B170DN2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+266.88 EUR
Mindestbestellmenge: 2
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BAT 54-02V E6327 BAT54_Series.pdf
BAT 54-02V E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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IGLD60R190D1SAUMA1
IGLD60R190D1SAUMA1
Hersteller: Infineon Technologies
Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
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F475R12KS4B11BPSA1 Infineon-F4_75R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa99f261370
F475R12KS4B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+144.64 EUR
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F475R12KS4BPSA1 Infineon-F4_75R12KS4-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43166255432
F475R12KS4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+150.02 EUR
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EVALM10565DTOBO2 Infineon-AN2016-24_EVAL-M1-05-65D_User_Manual-UM-v02_01-EN.pdf?fileId=5546d4625696ed760156da2dccd96f4a
EVALM10565DTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRMCK099
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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BSM300GB120DLCE3256HOSA1 BSM300GB120DLCS5HOSA1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+353.71 EUR
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SPB80N10L G SP(I,B,P)80N10L.pdf
SPB80N10L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BB 804 SF3 E6327 BB804.pdf
BB 804 SF3 E6327
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Produkt ist nicht verfügbar
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