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IPL65R130CFD7AUMA1 IPL65R130CFD7AUMA1 Infineon Technologies Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IPT039N15N5ATMA1 IPT039N15N5ATMA1 Infineon Technologies Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5 Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.51 EUR
Mindestbestellmenge: 2000
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IPT039N15N5ATMA1 IPT039N15N5ATMA1 Infineon Technologies Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5 Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 5583 Stücke:
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3+7.66 EUR
10+6.07 EUR
100+4.91 EUR
500+4.26 EUR
1000+4.22 EUR
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BAT1706WE6327 BAT1706WE6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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TT162N14KOFHPSA2 TT162N14KOFHPSA2 Infineon Technologies Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
auf Bestellung 8 Stücke:
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CY25404ZXI012 CY25404ZXI012 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2172 Stücke:
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25+20.32 EUR
Mindestbestellmenge: 25
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CY25404ZXI011 CY25404ZXI011 Infineon Technologies Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
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BGT60LTR11AIPE6327XUMA2 BGT60LTR11AIPE6327XUMA2 Infineon Technologies Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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5000+9.62 EUR
Mindestbestellmenge: 5000
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BGT60LTR11AIPE6327XUMA2 BGT60LTR11AIPE6327XUMA2 Infineon Technologies Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
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2+15.56 EUR
10+13.51 EUR
25+12.8 EUR
100+11.82 EUR
250+11.24 EUR
500+10.83 EUR
1000+10.44 EUR
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SHIELDBGT60LTR11AIPTOBO1 SHIELDBGT60LTR11AIPTOBO1 Infineon Technologies ProductSelectionGuide_v00_01_EN.pdf Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
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1+51.04 EUR
10+50.93 EUR
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94-3250 94-3250 Infineon Technologies IRF6604.pdf Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6601 IRF6601 Infineon Technologies irf6601.pdf Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6602 IRF6602 Infineon Technologies irf6602.pdf Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Produkt ist nicht verfügbar
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BCR521E6327 BCR521E6327 Infineon Technologies INFNS16393-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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DDB6U50N16W1RPB11BPSA1 DDB6U50N16W1RPB11BPSA1 Infineon Technologies Infineon-DDB6U50N16W1RP_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017fb22db1fb79c4 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 30 Stücke:
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1+61.85 EUR
30+41.84 EUR
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TLS850C2TEV50BOARDTOBO1 TLS850C2TEV50BOARDTOBO1 Infineon Technologies Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41 Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 3 Stücke:
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1+94.76 EUR
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STT3300N18P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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BSO065N03MSGXUMA1 BSO065N03MSGXUMA1 Infineon Technologies BSO065N03MS_G.pdf Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200NDC Infineon Technologies Infineon-TC27xDC_DS_v10-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b292f74ce Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TC277TP64F200SDCKXUMA3 TC277TP64F200SDCKXUMA3 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC275TP64F200WDBKXUMA1 TC275TP64F200WDBKXUMA1 Infineon Technologies Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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TC277TP64F200SCAKXUMA2 TC277TP64F200SCAKXUMA2 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC275TP64F200WCAKXQMA1 TC275TP64F200WCAKXQMA1 Infineon Technologies Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAK-TC275TP-64F200N DC SAK-TC275TP-64F200N DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA1 TC277TP64F200SDBKXUMA1 Infineon Technologies Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA2 TC277TP64F200SDBKXUMA2 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200N DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200 CA Infineon Technologies Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAK-TC222L-12F133F AB SAK-TC222L-12F133F AB Infineon Technologies Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE5109EVALKITTOBO2 TLE5109EVALKITTOBO2 Infineon Technologies Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4 Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
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IRLR3714TRPBF IRLR3714TRPBF Infineon Technologies IRL%28R%2CU%293714PbF.pdf Description: MOSFET N-CH 20V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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REFICL8800LED43WTOBO1 REFICL8800LED43WTOBO1 Infineon Technologies New_Product_Information_Aug2021.pdf Description: ICL8800 REF BOARD 43W
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8800
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
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EVALM1CM610N3TOBO2 EVALM1CM610N3TOBO2 Infineon Technologies Infineon-AN2017-09_Eval-M1-CM610N3-UserManual-v01_00-EN.pdf?fileId=5546d4625c167129015c52c1c3e17c4a Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
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F3L11MR12W2M1C01BOMA1 Infineon Technologies Description: IC SIC MOSFET LOW POWER
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KP216K1409 KP216K1409 Infineon Technologies INFNS15307-1.pdf?t.download=true&u=5oefqw Description: SENSOR 16.68PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 140°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
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PEF24911HV2.1 PEF24911HV2.1 Infineon Technologies Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
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PEF24911HV1.3 PEF24911HV1.3 Infineon Technologies Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
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PEB24911H PEB24911H Infineon Technologies Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
auf Bestellung 462 Stücke:
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14+36.54 EUR
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TLE7259-3LE TLE7259-3LE Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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TLD60982ESXUMA2 TLD60982ESXUMA2 Infineon Technologies Infineon-Infineon-TLD6098-2ES-DS_v01_10-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d3a67cb5d351b Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
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TLD60982ESXUMA2 TLD60982ESXUMA2 Infineon Technologies Infineon-Infineon-TLD6098-2ES-DS_v01_10-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d3a67cb5d351b Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
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4+5.37 EUR
10+4.03 EUR
25+3.69 EUR
100+3.32 EUR
250+3.15 EUR
500+3.04 EUR
1000+2.95 EUR
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IMZA120R014M1HXKSA1 IMZA120R014M1HXKSA1 Infineon Technologies Infineon-IMZA120R014M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795b69d31d3 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
auf Bestellung 2655 Stücke:
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1+40.37 EUR
30+29.68 EUR
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IMZA120R007M1HXKSA1 IMZA120R007M1HXKSA1 Infineon Technologies Infineon-IMZA120R007M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f878c94d831d0 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
auf Bestellung 378 Stücke:
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1+69.17 EUR
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IMZA120R040M1HXKSA1 IMZA120R040M1HXKSA1 Infineon Technologies Infineon-IMZA120R040M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795dc9831d9 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
auf Bestellung 239 Stücke:
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1+20.33 EUR
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IMZA120R020M1HXKSA1 IMZA120R020M1HXKSA1 Infineon Technologies Infineon-IMZA120R020M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795ca7f31d6 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
auf Bestellung 702 Stücke:
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IMW120R007M1HXKSA1 IMW120R007M1HXKSA1 Infineon Technologies Infineon-IMW120R007M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783822631b2 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
auf Bestellung 388 Stücke:
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30+54.23 EUR
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BAS4002LE6327 BAS4002LE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 15000 Stücke:
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3370+0.15 EUR
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IPI147N12N3G IPI147N12N3G Infineon Technologies INFNS16353-1.pdf?t.download=true&u=5oefqw Description: IPI147N12 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
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BSO211PH BSO211PH Infineon Technologies INFNS17238-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 20V 4A 532FCBGA
Packaging: Bulk
Package / Case: 532-BFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: 532-FCBGA (23x23)
Part Status: Active
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903+0.55 EUR
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PEB31666HV1.2D Infineon Technologies Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 887 Stücke:
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TLE4699EXUMA1 TLE4699EXUMA1 Infineon Technologies Infineon-TLE4699-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d703373eea Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Qualification: AEC-Q100
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6+3.43 EUR
10+2.54 EUR
25+2.32 EUR
100+2.07 EUR
250+1.95 EUR
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FS300R120E4B0SA1 Infineon Technologies Infineon-FS300R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304335f1f4b601363fdf1629503d Description: IGBT MODULE
Produkt ist nicht verfügbar
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FS300R17KE4BOSA1 FS300R17KE4BOSA1 Infineon Technologies Infineon-FS300R17KE4-DS-v02_00-en_de.pdf?fileId=db3a30431f848401011fb311a8c95003 Description: IGBT MOD 1700V 375A 1800W
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1+1176.56 EUR
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FS300R17KE4BOSA1 FS300R17KE4BOSA1 Infineon Technologies Infineon-FS300R17KE4-DS-v02_00-en_de.pdf?fileId=db3a30431f848401011fb311a8c95003 Description: IGBT MOD 1700V 375A 1800W
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FS300R12KE4BOSA1 FS300R12KE4BOSA1 Infineon Technologies Infineon-FS300R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e7133c09ce Description: IGBT MOD 1200V 450A 1600W
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FS300R12KE4BOSA1 FS300R12KE4BOSA1 Infineon Technologies Infineon-FS300R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e7133c09ce Description: IGBT MOD 1200V 450A 1600W
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FS300R17OE4PBOSA1 Infineon Technologies Description: MOD IGBT MED PWR ECONOPP-2
Packaging: Bulk
auf Bestellung 32 Stücke:
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FS300R17OE4PBOSA1 Infineon Technologies Description: MOD IGBT MED PWR ECONOPP-2
Packaging: Tray
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IFF2400P17AE4BPSA1 IFF2400P17AE4BPSA1 Infineon Technologies IFF2400P17AE440989.pdf Description: IGBT MODULE 1700V IPM MIPAQP-4
Packaging: Bulk
Package / Case: Module
Configuration: Half Bridge
Operating Temperature: -40°C ~ 65°C (TA)
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
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1+4320.04 EUR
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IFF2400P17AE4BPSA1 IFF2400P17AE4BPSA1 Infineon Technologies IFF2400P17AE440989.pdf Description: IGBT MODULE 1700V IPM MIPAQP-4
Packaging: Tray
Package / Case: Module
Configuration: Half Bridge
Operating Temperature: -40°C ~ 65°C (TA)
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
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IPL65R130CFD7AUMA1 Infineon-IPL65R130CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca703ad8b22fd
IPL65R130CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IPT039N15N5ATMA1 Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5
IPT039N15N5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.51 EUR
Mindestbestellmenge: 2000
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IPT039N15N5ATMA1 Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5
IPT039N15N5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 5583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+6.07 EUR
100+4.91 EUR
500+4.26 EUR
1000+4.22 EUR
Mindestbestellmenge: 3
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BAT1706WE6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT1706WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3406+0.14 EUR
Mindestbestellmenge: 3406
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TT162N14KOFHPSA2 Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N14KOFHPSA2
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+234.08 EUR
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CY25404ZXI012 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI012
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+20.32 EUR
Mindestbestellmenge: 25
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CY25404ZXI011 Infineon-CY25404_QUAD_PLL_PROGRAMMABLE_CLOCK_GENERATOR_WITH_SPREAD_SPECTRUM-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec65e4e3c93&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe
CY25404ZXI011
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 3053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+15.53 EUR
Mindestbestellmenge: 33
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BGT60LTR11AIPE6327XUMA2 Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e
BGT60LTR11AIPE6327XUMA2
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+9.62 EUR
Mindestbestellmenge: 5000
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BGT60LTR11AIPE6327XUMA2 Infineon-BGT60LTR11(S)AIP-DataSheet-v02_61-EN.pdf?fileId=8ac78c8c7c9758f2017cb7b72ee5268e
BGT60LTR11AIPE6327XUMA2
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.56 EUR
10+13.51 EUR
25+12.8 EUR
100+11.82 EUR
250+11.24 EUR
500+10.83 EUR
1000+10.44 EUR
Mindestbestellmenge: 2
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SHIELDBGT60LTR11AIPTOBO1 ProductSelectionGuide_v00_01_EN.pdf
SHIELDBGT60LTR11AIPTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.04 EUR
10+50.93 EUR
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94-3250 IRF6604.pdf
94-3250
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6601 irf6601.pdf
IRF6601
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6602 irf6602.pdf
IRF6602
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Produkt ist nicht verfügbar
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BCR521E6327 INFNS16393-1.pdf?t.download=true&u=5oefqw
BCR521E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
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DDB6U50N16W1RPB11BPSA1 Infineon-DDB6U50N16W1RP_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c7f2a768a017fb22db1fb79c4
DDB6U50N16W1RPB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.85 EUR
30+41.84 EUR
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TLS850C2TEV50BOARDTOBO1 Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41
TLS850C2TEV50BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.76 EUR
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STT3300N18P76XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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BSO065N03MSGXUMA1 BSO065N03MS_G.pdf
BSO065N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200NDC Infineon-TC27xDC_DS_v10-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b292f74ce
Hersteller: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TC277TP64F200SDCKXUMA3 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277TP64F200SDCKXUMA3
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC275TP64F200WDBKXUMA1
TC275TP64F200WDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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TC277TP64F200SCAKXUMA2 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TC277TP64F200SCAKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC275TP64F200WCAKXQMA1
TC275TP64F200WCAKXQMA1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAK-TC275TP-64F200N DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
SAK-TC275TP-64F200N DC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA1
TC277TP64F200SDBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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TC277TP64F200SDBKXUMA2 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TC277TP64F200SDBKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200N DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
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SAL-TC270TP-64F200 CA
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAK-TC222L-12F133F AB
SAK-TC222L-12F133F AB
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE5109EVALKITTOBO2 Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4
TLE5109EVALKITTOBO2
Hersteller: Infineon Technologies
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.54 EUR
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IRLR3714TRPBF IRL%28R%2CU%293714PbF.pdf
IRLR3714TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Produkt ist nicht verfügbar
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REFICL8800LED43WTOBO1 New_Product_Information_Aug2021.pdf
REFICL8800LED43WTOBO1
Hersteller: Infineon Technologies
Description: ICL8800 REF BOARD 43W
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8800
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+70.15 EUR
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EVALM1CM610N3TOBO2 Infineon-AN2017-09_Eval-M1-CM610N3-UserManual-v01_00-EN.pdf?fileId=5546d4625c167129015c52c1c3e17c4a
EVALM1CM610N3TOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+184.96 EUR
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F3L11MR12W2M1C01BOMA1
Hersteller: Infineon Technologies
Description: IC SIC MOSFET LOW POWER
Produkt ist nicht verfügbar
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KP216K1409 INFNS15307-1.pdf?t.download=true&u=5oefqw
KP216K1409
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 140°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
auf Bestellung 20777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+6.11 EUR
Mindestbestellmenge: 82
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PEF24911HV2.1
PEF24911HV2.1
Hersteller: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+31.64 EUR
Mindestbestellmenge: 16
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PEF24911HV1.3
PEF24911HV1.3
Hersteller: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
auf Bestellung 20098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+32.85 EUR
Mindestbestellmenge: 16
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PEB24911H
PEB24911H
Hersteller: Infineon Technologies
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+36.54 EUR
Mindestbestellmenge: 14
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TLE7259-3LE Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE7259-3LE
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
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TLD60982ESXUMA2 Infineon-Infineon-TLD6098-2ES-DS_v01_10-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d3a67cb5d351b
TLD60982ESXUMA2
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
Produkt ist nicht verfügbar
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TLD60982ESXUMA2 Infineon-Infineon-TLD6098-2ES-DS_v01_10-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d3a67cb5d351b
TLD60982ESXUMA2
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+4.03 EUR
25+3.69 EUR
100+3.32 EUR
250+3.15 EUR
500+3.04 EUR
1000+2.95 EUR
Mindestbestellmenge: 4
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IMZA120R014M1HXKSA1 Infineon-IMZA120R014M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795b69d31d3
IMZA120R014M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.37 EUR
30+29.68 EUR
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IMZA120R007M1HXKSA1 Infineon-IMZA120R007M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f878c94d831d0
IMZA120R007M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.17 EUR
30+50.51 EUR
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IMZA120R040M1HXKSA1 Infineon-IMZA120R040M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795dc9831d9
IMZA120R040M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.33 EUR
30+12.17 EUR
120+10.6 EUR
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IMZA120R020M1HXKSA1 Infineon-IMZA120R020M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8795ca7f31d6
IMZA120R020M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.68 EUR
30+19.57 EUR
120+19 EUR
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IMW120R007M1HXKSA1 Infineon-IMW120R007M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783822631b2
IMW120R007M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.94 EUR
30+54.23 EUR
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BAS4002LE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS4002LE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3370+0.15 EUR
Mindestbestellmenge: 3370
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IPI147N12N3G INFNS16353-1.pdf?t.download=true&u=5oefqw
IPI147N12N3G
Hersteller: Infineon Technologies
Description: IPI147N12 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
auf Bestellung 14603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
307+1.72 EUR
Mindestbestellmenge: 307
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BSO211PH INFNS17238-1.pdf?t.download=true&u=5oefqw
BSO211PH
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 532FCBGA
Packaging: Bulk
Package / Case: 532-BFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: 532-FCBGA (23x23)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
903+0.55 EUR
Mindestbestellmenge: 903
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PEB31666HV1.2D
Hersteller: Infineon Technologies
Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+45.27 EUR
Mindestbestellmenge: 12
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TLE4699EXUMA1 Infineon-TLE4699-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d703373eea
TLE4699EXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Qualification: AEC-Q100
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.54 EUR
25+2.32 EUR
100+2.07 EUR
250+1.95 EUR
500+1.88 EUR
Mindestbestellmenge: 6
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FS300R120E4B0SA1 Infineon-FS300R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304335f1f4b601363fdf1629503d
Hersteller: Infineon Technologies
Description: IGBT MODULE
Produkt ist nicht verfügbar
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FS300R17KE4BOSA1 Infineon-FS300R17KE4-DS-v02_00-en_de.pdf?fileId=db3a30431f848401011fb311a8c95003
FS300R17KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1176.56 EUR
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FS300R17KE4BOSA1 Infineon-FS300R17KE4-DS-v02_00-en_de.pdf?fileId=db3a30431f848401011fb311a8c95003
FS300R17KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Produkt ist nicht verfügbar
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FS300R12KE4BOSA1 Infineon-FS300R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e7133c09ce
FS300R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1600W
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+855.92 EUR
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FS300R12KE4BOSA1 Infineon-FS300R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e7133c09ce
FS300R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1600W
Produkt ist nicht verfügbar
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FS300R17OE4PBOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT MED PWR ECONOPP-2
Packaging: Bulk
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+787.86 EUR
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FS300R17OE4PBOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT MED PWR ECONOPP-2
Packaging: Tray
Produkt ist nicht verfügbar
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IFF2400P17AE4BPSA1 IFF2400P17AE440989.pdf
IFF2400P17AE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V IPM MIPAQP-4
Packaging: Bulk
Package / Case: Module
Configuration: Half Bridge
Operating Temperature: -40°C ~ 65°C (TA)
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4320.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IFF2400P17AE4BPSA1 IFF2400P17AE440989.pdf
IFF2400P17AE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V IPM MIPAQP-4
Packaging: Tray
Package / Case: Module
Configuration: Half Bridge
Operating Temperature: -40°C ~ 65°C (TA)
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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