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TLE4941HALA1 TLE4941HALA1 Infineon Technologies TLE4941(C).pdf Description: MAG SWITCH SPEC PURP SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-1
Packaging: Bulk
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TLE49411CBAMA1 TLE49411CBAMA1 Infineon Technologies TLE4941%28C%29.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Qualification: AEC-Q100
Grade: Automotive
Packaging: Bulk
Part Status: Not For New Designs
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
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TLE4941PLUSCBXTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC HALL EFFECT SENSOR SSOM-2
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TLE4941CBAMA1 TLE4941CBAMA1 Infineon Technologies TLE4941%28C%29.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
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TC297TA128F300SBCKXUMA2 TC297TA128F300SBCKXUMA2 Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: 32 BIT AURIX PG-LFBGA-292
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T2160N28TOFVTXPSA1 T2160N28TOFVTXPSA1 Infineon Technologies Infineon-T2160N-DS-v03_01-en_de.pdf?fileId=db3a304323b87bc2012409d27ee14755 Description: SCR MODULE 2800V 4600A DO200AE
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T2160N26TOFVTXPSA1 T2160N26TOFVTXPSA1 Infineon Technologies Infineon-T2160N-DS-v03_01-en_de.pdf?fileId=db3a304323b87bc2012409d27ee14755 Description: SCR MODULE 2800V 4600A DO200AE
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IPI65R420CFD IPI65R420CFD Infineon Technologies INFNS27725-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPI50R250CP IPI50R250CP Infineon Technologies INFNS15847-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IPI80N04S4-03 IPI80N04S4-03 Infineon Technologies INFNS15045-1.pdf?t.download=true&u=5oefqw Description: IPI80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
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MB91F133APMC-G-K7E1 Infineon Technologies Description: IC MICROCONTROLLER
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MB91133PMC-G-124K5E1 Infineon Technologies MB91130_Series_5-25-15.pdf Description: IC MCU 32BIT 254KB MROM
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MB91133PMC-G-123K5E1 Infineon Technologies MB91130_Series_5-25-15.pdf Description: IC MCU 32BIT 254KB MROM
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SAF-XC161CJ16F40FBBFXUMA1 Infineon Technologies Description: LEGACY 16-BIT FLASH MCU
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SAFXC161CJ16F40FBB Infineon Technologies Description: LEGACY 16-BIT FLASH MCU
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TLE4946KHTSA1 TLE4946KHTSA1 Infineon Technologies TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE4473GV55AUMA1 TLE4473GV55AUMA1 Infineon Technologies TLE4473%20GV55.pdf Description: IC REG LIN 190MA/300MA DSO12-6
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 190mA, 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 5V, Tracking
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 100mA, 0.6V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
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CY7C1515V18-167BZXI CY7C1515V18-167BZXI Infineon Technologies CY7C15%2811%2C13%2C15%2C26%29V18_8.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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BAR 90-098L4 E6327 BAR 90-098L4 E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Part Status: Discontinued at Digi-Key
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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TLE4276DV50ATMA2 TLE4276DV50ATMA2 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LIN 5V 400MA PG-TO252-5-1
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
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TLE4276DV50ATMA2 TLE4276DV50ATMA2 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LIN 5V 400MA PG-TO252-5-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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BGSA143GL10E6327XTSA1 BGSA143GL10E6327XTSA1 Infineon Technologies Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9 Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 3.2dB (max)
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5GHz ~ 6GHz
Isolation: 14dB
Supplier Device Package: PG-TSLP-10-2
IIP3: 78dBm
Part Status: Active
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 Infineon Technologies Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789 Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Supplier Device Package: PG-ATSLP-10-2
Frequency Range: 100MHz ~ 6GHz
Voltage - Supply: 2.3V ~ 3.4V
RF Type: General Purpose
Circuit: DPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 Infineon Technologies Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789 Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Packaging: Bulk
Package / Case: 10-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Voltage - Supply: 2.3V ~ 3.4V
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: PG-ATSLP-10-2
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BGSA402ML10E6327XTSA1 BGSA402ML10E6327XTSA1 Infineon Technologies Infineon-BGSA402ML10-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d4487dcd503d1 Description: IC RF SWITCH 4XSPST 6GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: 4 x SPST
RF Type: General Purpose
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 400MHz ~ 6GHz
Supplier Device Package: PG-TSLP-10-2
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BGSA402ML10E6327XTSA1 BGSA402ML10E6327XTSA1 Infineon Technologies Infineon-BGSA402ML10-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d4487dcd503d1 Description: IC RF SWITCH 4XSPST 6GHZ TSLP10
Packaging: Bulk
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: 4 x SPST
RF Type: General Purpose
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 400MHz ~ 6GHz
Supplier Device Package: PG-TSLP-10-2
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8 611 200 879 Infineon Technologies Description: IC MEMORY 1GB FLASH 3.0V 64FBGA
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IMBG65R030M1HXTMA1 IMBG65R030M1HXTMA1 Infineon Technologies Infineon-IMBG65R030M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982ab170d77 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
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IMBG65R030M1HXTMA1 IMBG65R030M1HXTMA1 Infineon Technologies Infineon-IMBG65R030M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982ab170d77 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
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IFX81481ELVXUMA1 IFX81481ELVXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG CTRLR BUCK 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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IRSM505-015PAALMA1 Infineon Technologies Infineon-irsm505-015-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm LS, 5Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.2A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM515-015PAALMA1 Infineon Technologies Infineon-irsm505-015-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A SOP23
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm LS, 5Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.2A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: PG-DIP-23-901/SOP 29x12F
Fault Protection: UVLO
Load Type: Inductive
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CY91F524BSDPMC1-GS-ERE2 CY91F524BSDPMC1-GS-ERE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 832KB FLASH 64LQFP
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MB91F525BSDPMC1-GSE1 Infineon Technologies MB91520_Series_RevF_12-5-17.pdf Description: IC MICROCONTROLLER
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CY7C1041D-2XWI Infineon Technologies CY7C1041D-2XWI_Web.pdf Description: IC SRAM 4MBIT PARALLEL
Packaging: Tray
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IST019N08NM5AUMA1 IST019N08NM5AUMA1 Infineon Technologies Infineon-IST019N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91f80b7eca Description: TRENCH 40<-<100V PG-HSOF-5
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
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IST019N08NM5AUMA1 IST019N08NM5AUMA1 Infineon Technologies Infineon-IST019N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91f80b7eca Description: TRENCH 40<-<100V PG-HSOF-5
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
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PEF 21628 E V1.2-G Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE 324-LBGA
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: EFM-(Ethernet First Mile) Symmetrical DSL Transceiver
Interface: HDLC, Parallel, Serial
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Supplier Device Package: PG-LBGA-324-2
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 650 mW
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ESD5V3U1U02LRHE6327XTSA1 ESD5V3U1U02LRHE6327XTSA1 Infineon Technologies INFNS16932-1.pdf?t.download=true&u=5oefqw Description: TRANSIENT VOLTAGE SUPPRESSOR DI
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI, USB
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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ESD5V0S4USH6327 ESD5V0S4USH6327 Infineon Technologies Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V3L1B02LRHE6327XTSA1 Infineon Technologies INFNS19430-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 9.8V (Typ), 10.4V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 7pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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ESD5V0S2U-06E6327 Infineon Technologies Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V0S2U-06E6327HTSA1 ESD5V0S2U-06E6327HTSA1 Infineon Technologies Description: ESD5V0 - SURGE PROTECTION DEVICE
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ESD5V0S1U-02VH6327 ESD5V0S1U-02VH6327 Infineon Technologies INFN-S-A0000321167-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V5S1B02LRHE6327XTSA1 ESD5V5S1B02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5.5VWM 9.2VC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD
Packaging: Bulk
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ESD5V3S1U02LRHE6327XTSA1 ESD5V3S1U02LRHE6327XTSA1 Infineon Technologies INFNS15735-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 5.3VWM 11VC TSLP-2-17
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ESD5V3S1B-02LRHE6327 Infineon Technologies INFNS15734-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V0S2U06E6327HTSA1 ESD5V0S2U06E6327HTSA1 Infineon Technologies ESD24VS2U-Schem.jpg Description: TVS DIODE 5VWM 14VC SOT23-3
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CY90F498GPFM-GE1 CY90F498GPFM-GE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 64QFP
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CY90F498GPMC-GSE1 CY90F498GPMC-GSE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 64QFP
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2EDN7434FXTMA1 2EDN7434FXTMA1 Infineon Technologies Infineon-2EDN7434F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc23862234c40 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDN7434FXTMA1 2EDN7434FXTMA1 Infineon Technologies Infineon-2EDN7434F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc23862234c40 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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IPB60R045P7ATMA1 IPB60R045P7ATMA1 Infineon Technologies Infineon-IPB60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48707f64aad Description: MOSFET N-CH 600V 61A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
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TLS105B0MBBOARDTOBO1 TLS105B0MBBOARDTOBO1 Infineon Technologies Infineon-Z8F61701244_TLS10xB0MB_Demoboards-UserManual-v01_00-EN.pdf?fileId=5546d46262b31d2e016317dad3046601 Description: EVAL BOARD FOR TLS105B0MB
Packaging: Box
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS105B0MB
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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TLE72732EV50XUMA1 TLE72732EV50XUMA1 Infineon Technologies Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
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25+3.89 EUR
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500+3.26 EUR
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SAL-TC222L-16F133F AB Infineon Technologies Description: IC MICROCONTROLLER
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SAL-TC212L-8F133F AB Infineon Technologies Description: IC MICROCONTROLLER
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SAKTC1337A136F150EFAAKXUMA1 Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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TD92N1625KOFHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
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F3L600R10W4S7FC22BPSA1 F3L600R10W4S7FC22BPSA1 Infineon Technologies Infineon-F3L600R10W4S7F_C22-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81fb7ad20182109c0e7675a6 Description: IGBT MODULE 950V 310A AG-EASY4B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY4B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
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TLE4941HALA1 TLE4941(C).pdf
TLE4941HALA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-1
Packaging: Bulk
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TLE49411CBAMA1 TLE4941%28C%29.pdf
TLE49411CBAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Qualification: AEC-Q100
Grade: Automotive
Packaging: Bulk
Part Status: Not For New Designs
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
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TLE4941PLUSCBXTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSOM-2
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TLE4941CBAMA1 TLE4941%28C%29.pdf
TLE4941CBAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Function: Special Purpose
Mounting Type: Through Hole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
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TC297TA128F300SBCKXUMA2 Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TA128F300SBCKXUMA2
Hersteller: Infineon Technologies
Description: 32 BIT AURIX PG-LFBGA-292
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T2160N28TOFVTXPSA1 Infineon-T2160N-DS-v03_01-en_de.pdf?fileId=db3a304323b87bc2012409d27ee14755
T2160N28TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2800V 4600A DO200AE
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T2160N26TOFVTXPSA1 Infineon-T2160N-DS-v03_01-en_de.pdf?fileId=db3a304323b87bc2012409d27ee14755
T2160N26TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2800V 4600A DO200AE
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IPI65R420CFD INFNS27725-1.pdf?t.download=true&u=5oefqw
IPI65R420CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
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IPI50R250CP INFNS15847-1.pdf?t.download=true&u=5oefqw
IPI50R250CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IPI80N04S4-03 INFNS15045-1.pdf?t.download=true&u=5oefqw
IPI80N04S4-03
Hersteller: Infineon Technologies
Description: IPI80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
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350+2.24 EUR
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MB91F133APMC-G-K7E1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
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MB91133PMC-G-124K5E1 MB91130_Series_5-25-15.pdf
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 254KB MROM
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MB91133PMC-G-123K5E1 MB91130_Series_5-25-15.pdf
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 254KB MROM
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SAF-XC161CJ16F40FBBFXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
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SAFXC161CJ16F40FBB
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
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TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
TLE4946KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE4473GV55AUMA1 TLE4473%20GV55.pdf
TLE4473GV55AUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 190MA/300MA DSO12-6
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 190mA, 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 5V, Tracking
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Obsolete
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 100mA, 0.6V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
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150+3.56 EUR
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CY7C1515V18-167BZXI CY7C15%2811%2C13%2C15%2C26%29V18_8.pdf
CY7C1515V18-167BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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BAR 90-098L4 E6327 fundamentals-of-power-semiconductors
BAR 90-098L4 E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Part Status: Discontinued at Digi-Key
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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TLE4276DV50ATMA2 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO252-5-1
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
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TLE4276DV50ATMA2 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO252-5-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Inhibit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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6+3.71 EUR
10+2.74 EUR
25+2.5 EUR
100+2.23 EUR
250+2.09 EUR
500+2.02 EUR
1000+1.96 EUR
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BGSA143GL10E6327XTSA1 Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9
BGSA143GL10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 3.2dB (max)
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5GHz ~ 6GHz
Isolation: 14dB
Supplier Device Package: PG-TSLP-10-2
IIP3: 78dBm
Part Status: Active
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19+1.13 EUR
27+0.8 EUR
30+0.71 EUR
100+0.62 EUR
250+0.58 EUR
500+0.56 EUR
1000+0.54 EUR
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BGSX22G2A10E6327XTSA1 Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789
BGSX22G2A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Supplier Device Package: PG-ATSLP-10-2
Frequency Range: 100MHz ~ 6GHz
Voltage - Supply: 2.3V ~ 3.4V
RF Type: General Purpose
Circuit: DPDT
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
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BGSX22G2A10E6327XTSA1 Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789
BGSX22G2A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Packaging: Bulk
Package / Case: 10-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Voltage - Supply: 2.3V ~ 3.4V
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: PG-ATSLP-10-2
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833+0.67 EUR
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BGSA402ML10E6327XTSA1 Infineon-BGSA402ML10-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d4487dcd503d1
BGSA402ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 4XSPST 6GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: 4 x SPST
RF Type: General Purpose
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 400MHz ~ 6GHz
Supplier Device Package: PG-TSLP-10-2
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BGSA402ML10E6327XTSA1 Infineon-BGSA402ML10-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d4487dcd503d1
BGSA402ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 4XSPST 6GHZ TSLP10
Packaging: Bulk
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: 4 x SPST
RF Type: General Purpose
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 400MHz ~ 6GHz
Supplier Device Package: PG-TSLP-10-2
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779+0.75 EUR
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8 611 200 879
Hersteller: Infineon Technologies
Description: IC MEMORY 1GB FLASH 3.0V 64FBGA
Produkt ist nicht verfügbar
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IMBG65R030M1HXTMA1 Infineon-IMBG65R030M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982ab170d77
IMBG65R030M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R030M1HXTMA1 Infineon-IMBG65R030M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982ab170d77
IMBG65R030M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
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1+25.28 EUR
10+17.64 EUR
100+14.38 EUR
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IFX81481ELVXUMA1 fundamentals-of-power-semiconductors
IFX81481ELVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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238+2.31 EUR
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IRSM505-015PAALMA1 Infineon-irsm505-015-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153567bcfc12864
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm LS, 5Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.2A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
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IRSM515-015PAALMA1 Infineon-irsm505-015-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153567bcfc12864
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A SOP23
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm LS, 5Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.2A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: PG-DIP-23-901/SOP 29x12F
Fault Protection: UVLO
Load Type: Inductive
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CY91F524BSDPMC1-GS-ERE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F524BSDPMC1-GS-ERE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 832KB FLASH 64LQFP
Produkt ist nicht verfügbar
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MB91F525BSDPMC1-GSE1 MB91520_Series_RevF_12-5-17.pdf
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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CY7C1041D-2XWI CY7C1041D-2XWI_Web.pdf
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL
Packaging: Tray
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IST019N08NM5AUMA1 Infineon-IST019N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91f80b7eca
IST019N08NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Produkt ist nicht verfügbar
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IST019N08NM5AUMA1 Infineon-IST019N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91f80b7eca
IST019N08NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 755 Stücke:
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3+9.17 EUR
10+6.94 EUR
100+4.96 EUR
500+4.13 EUR
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PEF 21628 E V1.2-G fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 324-LBGA
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: EFM-(Ethernet First Mile) Symmetrical DSL Transceiver
Interface: HDLC, Parallel, Serial
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Supplier Device Package: PG-LBGA-324-2
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 650 mW
Produkt ist nicht verfügbar
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ESD5V3U1U02LRHE6327XTSA1 INFNS16932-1.pdf?t.download=true&u=5oefqw
ESD5V3U1U02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANSIENT VOLTAGE SUPPRESSOR DI
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI, USB
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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4157+0.14 EUR
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ESD5V0S4USH6327
ESD5V0S4USH6327
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
auf Bestellung 66564 Stücke:
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4501+0.14 EUR
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ESD5V3L1B02LRHE6327XTSA1 INFNS19430-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 9.8V (Typ), 10.4V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 7pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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4501+0.14 EUR
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ESD5V0S2U-06E6327
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Produkt ist nicht verfügbar
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ESD5V0S2U-06E6327HTSA1
ESD5V0S2U-06E6327HTSA1
Hersteller: Infineon Technologies
Description: ESD5V0 - SURGE PROTECTION DEVICE
Produkt ist nicht verfügbar
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ESD5V0S1U-02VH6327 INFN-S-A0000321167-1.pdf?t.download=true&u=5oefqw
ESD5V0S1U-02VH6327
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V5S1B02LRHE6327XTSA1 fundamentals-of-power-semiconductors
ESD5V5S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 24pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD
Packaging: Bulk
auf Bestellung 943 Stücke:
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AnzahlPrivatkunde
943+0.57 EUR
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ESD5V3S1U02LRHE6327XTSA1 INFNS15735-1.pdf?t.download=true&u=5oefqw
ESD5V3S1U02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 11VC TSLP-2-17
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ESD5V3S1B-02LRHE6327 INFNS15734-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
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ESD5V0S2U06E6327HTSA1 ESD24VS2U-Schem.jpg
ESD5V0S2U06E6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 14VC SOT23-3
Produkt ist nicht verfügbar
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CY90F498GPFM-GE1
CY90F498GPFM-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64QFP
Produkt ist nicht verfügbar
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CY90F498GPMC-GSE1
CY90F498GPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64QFP
Produkt ist nicht verfügbar
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2EDN7434FXTMA1 Infineon-2EDN7434F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc23862234c40
2EDN7434FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7434FXTMA1 Infineon-2EDN7434F-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dbca96b017dc23862234c40
2EDN7434FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
25+0.87 EUR
27+0.79 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.58 EUR
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IPB60R045P7ATMA1 Infineon-IPB60R045P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48707f64aad
IPB60R045P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
Produkt ist nicht verfügbar
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TLS105B0MBBOARDTOBO1 Infineon-Z8F61701244_TLS10xB0MB_Demoboards-UserManual-v01_00-EN.pdf?fileId=5546d46262b31d2e016317dad3046601
TLS105B0MBBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS105B0MB
Packaging: Box
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS105B0MB
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+64.34 EUR
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TLE72732EV50XUMA1 Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee
TLE72732EV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 180MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.7 EUR
10+4.25 EUR
25+3.89 EUR
100+3.5 EUR
250+3.32 EUR
500+3.26 EUR
Mindestbestellmenge: 4 Stücke
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SAL-TC222L-16F133F AB
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAL-TC212L-8F133F AB
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAKTC1337A136F150EFAAKXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+17.48 EUR
Mindestbestellmenge: 31 Stücke
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TD92N1625KOFHPSA1 TT92N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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F3L600R10W4S7FC22BPSA1 Infineon-F3L600R10W4S7F_C22-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81fb7ad20182109c0e7675a6
F3L600R10W4S7FC22BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 950V 310A AG-EASY4B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY4B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+397.83 EUR
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