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EVALM13645ATOBO2 EVALM13645ATOBO2 Infineon Technologies Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69 Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+201.94 EUR
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BSM100GB120DN2K Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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IDC05S60CEX1SA1 Infineon Technologies IDC05S60CE.pdf Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 Infineon Technologies SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 Infineon Technologies SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417 Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C6X1SA4 Infineon Technologies SIDC02D60C6.pdf Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D120H6X1SA3 Infineon Technologies SIDC03D120H6.pdf Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC03D60C6X1SA2 Infineon Technologies SIDC03D60C6.pdf Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC05D60C6X1SA2 Infineon Technologies SIDC05D60C6.pdf Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC02D60F6X1SA1 Infineon Technologies SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36 Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C8F1SA1 Infineon Technologies Description: DIODE SWITCHING 600V 6A WAFER
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SIDC07D60F6X7SA1 Infineon Technologies Description: DIODE SWITCHING 600V WAFER
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SIDC07D60F6X1SA5 Infineon Technologies SIDC07D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
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SIDC03D120F6X1SA1 Infineon Technologies SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0 Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC07D60E6X1SA1 Infineon Technologies Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096 Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC03D60C8X7SA2 Infineon Technologies Description: DIODE SWITCHING 600V 10A WAFER
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BCR166E6393HTSA1 BCR166E6393HTSA1 Infineon Technologies SIEMD095-687.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.034 EUR
Mindestbestellmenge: 13172
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MB96F646RBPMC-GS-107JAE2 MB96F646RBPMC-GS-107JAE2 Infineon Technologies Description: IC MCU 16BIT 288KB FLASH 100LQFP
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IRFH8321TRPBF IRFH8321TRPBF Infineon Technologies IRFH8321PBF.pdf Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
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BTT3050EJXUMA1 BTT3050EJXUMA1 Infineon Technologies Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2 Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTT3050EJXUMA1 BTT3050EJXUMA1 Infineon Technologies Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2 Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 1472 Stücke:
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5+4.17 EUR
10+2.69 EUR
100+2.05 EUR
500+1.63 EUR
1000+1.5 EUR
Mindestbestellmenge: 5
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BTS129E3045ANTMA1 BTS129E3045ANTMA1 Infineon Technologies INFNS05889-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 2997 Stücke:
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71+7.16 EUR
Mindestbestellmenge: 71
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BSZ039N06NSATMA1 BSZ039N06NSATMA1 Infineon Technologies Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 1118 Stücke:
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9+1.97 EUR
11+1.69 EUR
25+1.6 EUR
100+1.47 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.28 EUR
Mindestbestellmenge: 9
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IRS2007MTRPBFXUMA1 IRS2007MTRPBFXUMA1 Infineon Technologies Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2007MTRPBFXUMA1 IRS2007MTRPBFXUMA1 Infineon Technologies Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2538 Stücke:
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12+1.57 EUR
16+1.13 EUR
25+1.02 EUR
100+0.9 EUR
250+0.84 EUR
500+0.81 EUR
1000+0.78 EUR
Mindestbestellmenge: 12
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CYW20730A1KMLGT CYW20730A1KMLGT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP062NE7N3G IPP062NE7N3G Infineon Technologies INFNS15857-1.pdf?t.download=true&u=5oefqw Description: IPP062NE7 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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TLE92464EDHPEVALBRD TLE92464EDHPEVALBRD Infineon Technologies Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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EVALIKA15N65ET6TOBO1 EVALIKA15N65ET6TOBO1 Infineon Technologies Infineon-EVAL-IKA15N65ET6-UserManual-v01_10-EN.pdf?fileId=8ac78c8c80f4d329018113d61dcf5eb1 Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+153.38 EUR
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TLF42772ELXUMA1 TLF42772ELXUMA1 Infineon Technologies Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16 Description: IC REG LIN POS ADJ 300MA 14SSOP
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF7353D2TRPBF IRF7353D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR4620TRL AUIRFR4620TRL Infineon Technologies INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.01 EUR
Mindestbestellmenge: 3000
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AUIRFR4620TRL AUIRFR4620TRL Infineon Technologies INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5274 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.49 EUR
10+4.73 EUR
100+3.83 EUR
500+3.68 EUR
Mindestbestellmenge: 4
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ETD540N22P60TIMHPSA1 Infineon Technologies Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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ESD3V3S1B-02LSE6327XTSA1 ESD3V3S1B-02LSE6327XTSA1 Infineon Technologies INFNS19168-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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V23809C8C10 Infineon Technologies Description: FAST ETHERNET TRANSCEICER
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V23809-C8-C10 Infineon Technologies Description: FAST ETHERNET TRANSCEICER
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SIDC07D60F6X1SA3 Infineon Technologies SIDC07D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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2500+1.23 EUR
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7500+1.19 EUR
Mindestbestellmenge: 2500
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 10303 Stücke:
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10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
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IRFR2307ZTRLPBF IRFR2307ZTRLPBF Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
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IPT044N15N5ATMA1 IPT044N15N5ATMA1 Infineon Technologies Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2000 Stücke:
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IPT044N15N5ATMA1 IPT044N15N5ATMA1 Infineon Technologies Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2638 Stücke:
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3+8.25 EUR
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100+4.56 EUR
500+3.79 EUR
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IPT054N15N5ATMA1 IPT054N15N5ATMA1 Infineon Technologies Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Produkt ist nicht verfügbar
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IPT054N15N5ATMA1 IPT054N15N5ATMA1 Infineon Technologies Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 1460 Stücke:
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3+8.22 EUR
10+5.72 EUR
100+4.14 EUR
500+3.68 EUR
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AUXHMF7321D2 AUXHMF7321D2 Infineon Technologies IRF7321D2PBF.pdf Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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MB95F654ENPFT-G101SNERE2 MB95F654ENPFT-G101SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB95F564KNPFT-G107SNERE2 MB95F564KNPFT-G107SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 ISC007N04NM6ATMA1 Infineon Technologies Infineon-ISC007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46276fb756a017715b9644363e7 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 ISC007N04NM6ATMA1 Infineon Technologies Infineon-ISC007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46276fb756a017715b9644363e7 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 4110 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+3.35 EUR
100+2.34 EUR
500+1.98 EUR
Mindestbestellmenge: 4
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ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 Infineon Technologies Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004 Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 Infineon Technologies Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004 Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
auf Bestellung 1847 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+1.88 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.95 EUR
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BGS1711MC222IE6433XUSA1 Infineon Technologies Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 94000 Stücke:
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15000+0.033 EUR
Mindestbestellmenge: 15000
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DF23MR12W1M1B11BOMA1244 Infineon Technologies INFN-S-A0003553949-1.pdf?t.download=true&u=5oefqw Description: MOSFET
Packaging: Bulk
auf Bestellung 24 Stücke:
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4+146.55 EUR
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EVAL6EDL7141TRAP1SHTOBO1 EVAL6EDL7141TRAP1SHTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_6EDL7141_TRAP_1SH-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46279cccfdb017a0ae054e624bd&da=t Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 3 Stücke:
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1+386.67 EUR
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EVALIMD700AFOC3SHTOBO1 EVALIMD700AFOC3SHTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_IMD700A_FOC_3SH-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fdf3691800b9d Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
auf Bestellung 5 Stücke:
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1+351.21 EUR
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BGH 182M E6327 Infineon Technologies Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372 Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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TC1796256F150EXBEKDUMA1 TC1796256F150EXBEKDUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ACCESSORY26649NOSA1 Infineon Technologies Description: ACCESSORY 26649
Produkt ist nicht verfügbar
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CY7C1645KV18-400BZXI CY7C1645KV18-400BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALM13645ATOBO2 Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69
EVALM13645ATOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
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Anzahl Preis
1+201.94 EUR
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BSM100GB120DN2K EUPCS02845-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Produkt ist nicht verfügbar
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IDC05S60CEX1SA1 IDC05S60CE.pdf
Hersteller: Infineon Technologies
Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b
Hersteller: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417
Hersteller: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC02D60C6X1SA4 SIDC02D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC03D120H6X1SA3 SIDC03D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC03D60C6X1SA2 SIDC03D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC05D60C6X1SA2 SIDC05D60C6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC02D60F6X1SA1 SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36
Hersteller: Infineon Technologies
Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC02D60C8F1SA1
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V 6A WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60F6X7SA1
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60F6X1SA5 SIDC07D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC03D120F6X1SA1 SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60E6X1SA1 Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096
Hersteller: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC03D60C8X7SA2
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V 10A WAFER
Produkt ist nicht verfügbar
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BCR166E6393HTSA1 SIEMD095-687.pdf?t.download=true&u=5oefqw
BCR166E6393HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.034 EUR
Mindestbestellmenge: 13172
Im Einkaufswagen  Stück im Wert von  UAH
MB96F646RBPMC-GS-107JAE2
MB96F646RBPMC-GS-107JAE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100LQFP
Produkt ist nicht verfügbar
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IRFH8321TRPBF IRFH8321PBF.pdf
IRFH8321TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
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BTT3050EJXUMA1 Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2
BTT3050EJXUMA1
Hersteller: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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BTT3050EJXUMA1 Infineon-BTT3050EJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f07f285a22bc2
BTT3050EJXUMA1
Hersteller: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 1472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+2.05 EUR
500+1.63 EUR
1000+1.5 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTS129E3045ANTMA1 INFNS05889-1.pdf?t.download=true&u=5oefqw
BTS129E3045ANTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+7.16 EUR
Mindestbestellmenge: 71
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BSZ039N06NSATMA1 Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d
BSZ039N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 1118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
11+1.69 EUR
25+1.6 EUR
100+1.47 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.28 EUR
Mindestbestellmenge: 9
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IRS2007MTRPBFXUMA1 Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf
IRS2007MTRPBFXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007MTRPBFXUMA1 Infineon-IRS2007S-M-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf
IRS2007MTRPBFXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
16+1.13 EUR
25+1.02 EUR
100+0.9 EUR
250+0.84 EUR
500+0.81 EUR
1000+0.78 EUR
Mindestbestellmenge: 12
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CYW20730A1KMLGT CYW20730_RevJ_4-25-17.pdf
CYW20730A1KMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP062NE7N3G INFNS15857-1.pdf?t.download=true&u=5oefqw
IPP062NE7N3G
Hersteller: Infineon Technologies
Description: IPP062NE7 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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TLE92464EDHPEVALBRD Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf
TLE92464EDHPEVALBRD
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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EVALIKA15N65ET6TOBO1 Infineon-EVAL-IKA15N65ET6-UserManual-v01_10-EN.pdf?fileId=8ac78c8c80f4d329018113d61dcf5eb1
EVALIKA15N65ET6TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+153.38 EUR
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TLF42772ELXUMA1 Infineon-TLF4277-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e999fd3f16
TLF42772ELXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA 14SSOP
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF7353D2TRPBF IR_PartNumberingSystem.pdf
IRF7353D2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR4620TRL INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw
AUIRFR4620TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.01 EUR
Mindestbestellmenge: 3000
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AUIRFR4620TRL INFN-S-A0002298851-1.pdf?t.download=true&u=5oefqw
AUIRFR4620TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
10+4.73 EUR
100+3.83 EUR
500+3.68 EUR
Mindestbestellmenge: 4
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ETD540N22P60TIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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ESD3V3S1B-02LSE6327XTSA1 INFNS19168-1.pdf?t.download=true&u=5oefqw
ESD3V3S1B-02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5624+0.089 EUR
Mindestbestellmenge: 5624
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V23809C8C10
Hersteller: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
Produkt ist nicht verfügbar
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V23809-C8-C10
Hersteller: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
Produkt ist nicht verfügbar
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SIDC07D60F6X1SA3 SIDC07D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Produkt ist nicht verfügbar
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TLE9250VSJXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.23 EUR
5000+1.2 EUR
7500+1.19 EUR
Mindestbestellmenge: 2500
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TLE9250VSJXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 10303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+1.8 EUR
25+1.64 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
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IRFR2307ZTRLPBF irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074
IRFR2307ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.05 EUR
Mindestbestellmenge: 3000
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IPT044N15N5ATMA1 Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f
IPT044N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.35 EUR
Mindestbestellmenge: 2000
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IPT044N15N5ATMA1 Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f
IPT044N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.25 EUR
10+5.73 EUR
100+4.56 EUR
500+3.79 EUR
Mindestbestellmenge: 3
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IPT054N15N5ATMA1 Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c
IPT054N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Produkt ist nicht verfügbar
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IPT054N15N5ATMA1 Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c
IPT054N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.22 EUR
10+5.72 EUR
100+4.14 EUR
500+3.68 EUR
Mindestbestellmenge: 3
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AUXHMF7321D2 IRF7321D2PBF.pdf
AUXHMF7321D2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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MB95F654ENPFT-G101SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654ENPFT-G101SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F564KNPFT-G107SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F564KNPFT-G107SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 Infineon-ISC007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46276fb756a017715b9644363e7
ISC007N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 Infineon-ISC007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46276fb756a017715b9644363e7
ISC007N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 4110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.35 EUR
100+2.34 EUR
500+1.98 EUR
Mindestbestellmenge: 4
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ISC017N04NM5ATMA1 Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004
ISC017N04NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC017N04NM5ATMA1 Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004
ISC017N04NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
auf Bestellung 1847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+1.88 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 8
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BGS1711MC222IE6433XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 94000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.033 EUR
Mindestbestellmenge: 15000
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DF23MR12W1M1B11BOMA1244 INFN-S-A0003553949-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+146.55 EUR
Mindestbestellmenge: 4
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EVAL6EDL7141TRAP1SHTOBO1 Infineon-Evaluation_board_EVAL_6EDL7141_TRAP_1SH-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46279cccfdb017a0ae054e624bd&da=t
EVAL6EDL7141TRAP1SHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+386.67 EUR
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EVALIMD700AFOC3SHTOBO1 Infineon-Evaluation_board_EVAL_IMD700A_FOC_3SH-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fdf3691800b9d
EVALIMD700AFOC3SHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+351.21 EUR
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BGH 182M E6327 Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372
Hersteller: Infineon Technologies
Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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TC1796256F150EXBEKDUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
TC1796256F150EXBEKDUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ACCESSORY26649NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY 26649
Produkt ist nicht verfügbar
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CY7C1645KV18-400BZXI download
CY7C1645KV18-400BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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