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BBY 51-02L E6327 BBY 51-02L E6327 Infineon Technologies BBY51.pdf Description: DIODE TUNING 7V 20MA TSLP-2
Capacitance Ratio: 2.2
Voltage - Peak Reverse (Max): 7 V
Supplier Device Package: PG-TSLP-2-1
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD18VU1B-02LSE6327 Infineon Technologies INFNS19119-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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FP150R12N3T7PB11BPSA1 FP150R12N3T7PB11BPSA1 Infineon Technologies Infineon-FP150R12N3T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a48d2d2e29 Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Current - Collector Cutoff (Max): 12 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IPT008N06NM5LFATMA1 IPT008N06NM5LFATMA1 Infineon Technologies Infineon-IPT008N06NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0bc6601b5 Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
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IPT008N06NM5LFATMA1 IPT008N06NM5LFATMA1 Infineon Technologies Infineon-IPT008N06NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0bc6601b5 Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
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2+11.19 EUR
10+7.58 EUR
100+5.75 EUR
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FS03MR12A6MA1B Infineon Technologies Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
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DDB6U134N16RRB11BPSA2 DDB6U134N16RRB11BPSA2 Infineon Technologies Infineon-DDB6U134N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d4625c167129015c53affc447cd4 Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Current - Collector (Ic) (Max): 125 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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DF400R12KE3 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: DFXR12H - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FD300R06KE3HOSA1 FD300R06KE3HOSA1 Infineon Technologies Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7 Description: IGBT MOD 600V 400A 940W
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FD300R06KE3HOSA1 FD300R06KE3HOSA1 Infineon Technologies Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7 Description: IGBT MOD 600V 400A 940W
Produkt ist nicht verfügbar
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FP75R12N3T7B11BPSA1 FP75R12N3T7B11BPSA1 Infineon Technologies Infineon-FP75R12N3T7_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd0180988feaa73c1f Description: IGBT MODULE 1200V 75A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
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BTS70061EPZXUMA1 BTS70061EPZXUMA1 Infineon Technologies Infineon-BTS7006-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e870302109e Description: PROFET PG-TSDSO-14
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 6.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 175°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-14-11
Ratio - Input:Output: 1:1
Current - Output (Max): 12.5A
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3000+1.57 EUR
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BTS70061EPZXUMA1 BTS70061EPZXUMA1 Infineon Technologies Infineon-BTS7006-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e870302109e Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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6+3.1 EUR
10+2.28 EUR
25+2.08 EUR
100+1.85 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.63 EUR
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BSC0805LSATMA1 BSC0805LSATMA1 Infineon Technologies Infineon-BSC0805LS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff09a510e4f7b Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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TLE9250XSJXUMA1 TLE9250XSJXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGDSO8
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 10000 Stücke:
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2500+1.21 EUR
5000+1.18 EUR
7500+1.17 EUR
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TLE9250XSJXUMA1 TLE9250XSJXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Qualification: AEC-Q100
Grade: Automotive
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10+1.78 EUR
25+1.61 EUR
100+1.43 EUR
250+1.35 EUR
500+1.3 EUR
1000+1.26 EUR
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STT1400N16P55XPSA1 STT1400N16P55XPSA1 Infineon Technologies Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754 Description: SCR MODULE 1.6KV MODULE
Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 2 V
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: 1-Phase Controller - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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S71VS064RB0AHT4L3 Infineon Technologies Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
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200+5.25 EUR
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AIKQ200N75CP2XKSA1 AIKQ200N75CP2XKSA1 Infineon Technologies Infineon-AIKQ200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7e7124d1017f0656853314e6 Description: IGBT TRENCH 750V 200A TO-247-3
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 1256 nC
Switching Energy: 15.3mJ (on), 7mJ (off)
Td (on/off) @ 25°C: 89ns/266ns
IGBT Type: Trench
Supplier Device Package: TO-247-3
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 576 W
Current - Collector Pulsed (Icm): 600 A
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1+23.41 EUR
30+14.35 EUR
120+12.37 EUR
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TLS412533VBOARDTOBO1 TLS412533VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: TLS4125 3.3V BOARD
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125D0EPV33
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 3.7V ~ 35V
Voltage - Output: 3.3V
Packaging: Bulk
Outputs and Type: 1, Non-Isolated
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1+86.94 EUR
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TLS412033VBOARDTOBO1 TLS412033VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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IRFS4410PBF-INF IRFS4410PBF-INF Infineon Technologies IRSDS09876-1.pdf?t.download=true&u=5oefqw Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
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SAF-XC836T-2FRIAB SAF-XC836T-2FRIAB Infineon Technologies INFNS16643-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC8362FRAABFXUMA1 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT1504WH2110XTSA1 BAT1504WH2110XTSA1 Infineon Technologies Infineon-BAT15-04W-DS-v01_00-EN.pdf Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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3000+0.34 EUR
6000+0.33 EUR
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BAT1504WH2110XTSA1 BAT1504WH2110XTSA1 Infineon Technologies Infineon-BAT15-04W-DS-v01_00-EN.pdf Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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23+0.77 EUR
33+0.55 EUR
37+0.49 EUR
100+0.43 EUR
250+0.39 EUR
500+0.38 EUR
1000+0.36 EUR
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6PS04012E4DG36022NOSA1 Infineon Technologies 6PS04012E4DG36022_rev2.1_10-17-12.pdf Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
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F3L75R12W1H3BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY1B-311
Packaging: Tray
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DF400R07PE4R_B6 Infineon Technologies DF400R07PE4R_B_Rev3.0_2013-11-11.pdf Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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2PS06017E32G28213NOSA1 2PS06017E32G28213NOSA1 Infineon Technologies 2PS06017E32G28213.pdf Description: IGBT MODULE 1100VDC 325A
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IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 Infineon Technologies Infineon-IMBG65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0cee21653 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
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IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 Infineon Technologies Infineon-IMBG65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0cee21653 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 Infineon Technologies Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
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IRFP4468PBFXKMA1 IRFP4468PBFXKMA1 Infineon Technologies Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Description: MOSFET N-CH 100V 195A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1A
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
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IRFP4668PBFXKMA1 IRFP4668PBFXKMA1 Infineon Technologies infineon-irfp4668-datasheet-en.pdf Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
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IRFP4568PBFXKMA1 IRFP4568PBFXKMA1 Infineon Technologies Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
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TD61N12KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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TT240N34KOFHPSA1 TT240N34KOFHPSA1 Infineon Technologies TT240N.pdf Description: SCR MODULE 3.4KV 700A MODULE
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MB9BF429SAPMC-GK7E2 MB9BF429SAPMC-GK7E2 Infineon Technologies Description: IC MCU 32B 1.5625MB FLSH 144LQFP
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MB9BF429TBGL-GE1 MB9BF429TBGL-GE1 Infineon Technologies Description: IC MCU 32B 1.5625MB FLSH 192FBGA
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BSC205N10LS G BSC205N10LS G Infineon Technologies BSC205N10LS_G.pdf Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Produkt ist nicht verfügbar
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BSC205N10LS G BSC205N10LS G Infineon Technologies BSC205N10LS_G.pdf Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Produkt ist nicht verfügbar
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TC234L32F200FABKXUMA1 TC234L32F200FABKXUMA1 Infineon Technologies Infineon-TC23xL-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697b2244d2457 Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC161CJ16F20FBBFXUMA3 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
Produkt ist nicht verfügbar
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F4100R12N2H3FB11BPSA1 F4100R12N2H3FB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Part Status: Active
auf Bestellung 2 Stücke:
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1+194.87 EUR
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F4150R12N3H3FB11BPSA1 F4150R12N3H3FB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Part Status: Active
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1+642.28 EUR
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F4200R12N3H3FB11BPSA1 F4200R12N3H3FB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
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SAK-XE167KM-48F80L AA SAK-XE167KM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167KM-48F80L AA SAF-XE167KM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CY90F543PF-GE1 CY90F543PF-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F543GSPF-GS-BI24E1 CY90F543GSPF-GS-BI24E1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F543GSPMC-GSE1 CY90F543GSPMC-GSE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F522FSEPMC-GSE1 Infineon Technologies MB91520_Series_RevF_12-5-17.pdf Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F522FSDPMC-GSE1 Infineon Technologies MB91520_Series_RevF_12-5-17.pdf Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETT480N22P60HPSA1 ETT480N22P60HPSA1 Infineon Technologies Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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2+257.86 EUR
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F445MR12W1M1B76BPSA1 Infineon Technologies F4-45MR12W1M1_B76_2-12-21.pdf Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
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IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 Infineon Technologies Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 31 Stücke:
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9+2.01 EUR
14+1.27 EUR
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CY8C3665AXI-198 CY8C3665AXI-198 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 100TQFP
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
47+10.76 EUR
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TT92N12KOFKHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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TT92N08KOFKHPSA1 Infineon Technologies TT92N.pdf Description: SCR MODULE 800V 160A MODULE
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 160 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Common Cathode - All SCRs
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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BBY 51-02L E6327 BBY51.pdf
BBY 51-02L E6327
Hersteller: Infineon Technologies
Description: DIODE TUNING 7V 20MA TSLP-2
Capacitance Ratio: 2.2
Voltage - Peak Reverse (Max): 7 V
Supplier Device Package: PG-TSLP-2-1
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD18VU1B-02LSE6327 INFNS19119-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Voltage - Breakdown (Min): 20V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
auf Bestellung 13300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5189+0.11 EUR
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FP150R12N3T7PB11BPSA1 Infineon-FP150R12N3T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a48d2d2e29
FP150R12N3T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Current - Collector Cutoff (Max): 12 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
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AnzahlPreis
1+337.16 EUR
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IPT008N06NM5LFATMA1 Infineon-IPT008N06NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0bc6601b5
IPT008N06NM5LFATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
Produkt ist nicht verfügbar
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IPT008N06NM5LFATMA1 Infineon-IPT008N06NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0bc6601b5
IPT008N06NM5LFATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
auf Bestellung 3337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.19 EUR
10+7.58 EUR
100+5.75 EUR
Mindestbestellmenge: 2 Stücke
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FS03MR12A6MA1B Infineon-FS03MR12A6MA1B-DataSheet-v01_00-EN.pdf?fileId=5546d4627862c3e501787e48f6ef330c
Hersteller: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Produkt ist nicht verfügbar
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DDB6U134N16RRB11BPSA2 Infineon-DDB6U134N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d4625c167129015c53affc447cd4
DDB6U134N16RRB11BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Current - Collector (Ic) (Max): 125 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 12 Stücke:
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AnzahlPreis
1+113.22 EUR
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DF400R12KE3 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
Hersteller: Infineon Technologies
Description: DFXR12H - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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FD300R06KE3HOSA1 Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7
FD300R06KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 400A 940W
auf Bestellung 35 Stücke:
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AnzahlPreis
4+172.3 EUR
Mindestbestellmenge: 4 Stücke
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FD300R06KE3HOSA1 Infineon-FD300R06KE3-DS-v02_02-en_de.pdf?fileId=db3a30431689f4420116d2b4ead50bd7
FD300R06KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 400A 940W
Produkt ist nicht verfügbar
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FP75R12N3T7B11BPSA1 Infineon-FP75R12N3T7_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd0180988feaa73c1f
FP75R12N3T7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 75A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 3 Stücke:
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AnzahlPreis
1+148.23 EUR
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BTS70061EPZXUMA1 Infineon-BTS7006-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e870302109e
BTS70061EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 6.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 175°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-14-11
Ratio - Input:Output: 1:1
Current - Output (Max): 12.5A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+1.57 EUR
Mindestbestellmenge: 3000 Stücke
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BTS70061EPZXUMA1 Infineon-BTS7006-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626e651a41016e7e870302109e
BTS70061EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3281 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.1 EUR
10+2.28 EUR
25+2.08 EUR
100+1.85 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.63 EUR
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BSC0805LSATMA1 Infineon-BSC0805LS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff09a510e4f7b
BSC0805LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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TLE9250XSJXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.21 EUR
5000+1.18 EUR
7500+1.17 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9250XSJXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Receiver Hysteresis: 100 mV
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 12095 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.43 EUR
10+1.78 EUR
25+1.61 EUR
100+1.43 EUR
250+1.35 EUR
500+1.3 EUR
1000+1.26 EUR
Mindestbestellmenge: 8 Stücke
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STT1400N16P55XPSA1 Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754
STT1400N16P55XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 2 V
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: 1-Phase Controller - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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S71VS064RB0AHT4L3
Hersteller: Infineon Technologies
Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
200+5.25 EUR
Mindestbestellmenge: 200 Stücke
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AIKQ200N75CP2XKSA1 Infineon-AIKQ200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7e7124d1017f0656853314e6
AIKQ200N75CP2XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 750V 200A TO-247-3
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 1256 nC
Switching Energy: 15.3mJ (on), 7mJ (off)
Td (on/off) @ 25°C: 89ns/266ns
IGBT Type: Trench
Supplier Device Package: TO-247-3
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 576 W
Current - Collector Pulsed (Icm): 600 A
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+23.41 EUR
30+14.35 EUR
120+12.37 EUR
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TLS412533VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS412533VBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4125 3.3V BOARD
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125D0EPV33
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 3.7V ~ 35V
Voltage - Output: 3.3V
Packaging: Bulk
Outputs and Type: 1, Non-Isolated
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+86.94 EUR
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TLS412033VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS412033VBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
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IRFS4410PBF-INF IRSDS09876-1.pdf?t.download=true&u=5oefqw
IRFS4410PBF-INF
Hersteller: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Produkt ist nicht verfügbar
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SAF-XC836T-2FRIAB INFNS16643-1.pdf?t.download=true&u=5oefqw
SAF-XC836T-2FRIAB
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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XC8362FRAABFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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BAT1504WH2110XTSA1 Infineon-BAT15-04W-DS-v01_00-EN.pdf
BAT1504WH2110XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 6000 Stücke:
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3000+0.34 EUR
6000+0.33 EUR
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BAT1504WH2110XTSA1 Infineon-BAT15-04W-DS-v01_00-EN.pdf
BAT1504WH2110XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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23+0.77 EUR
33+0.55 EUR
37+0.49 EUR
100+0.43 EUR
250+0.39 EUR
500+0.38 EUR
1000+0.36 EUR
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6PS04012E4DG36022NOSA1 6PS04012E4DG36022_rev2.1_10-17-12.pdf
Hersteller: Infineon Technologies
Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Produkt ist nicht verfügbar
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F3L75R12W1H3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-311
Packaging: Tray
auf Bestellung 24 Stücke:
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AnzahlPreis
1+55.09 EUR
24+37.29 EUR
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DF400R07PE4R_B6 DF400R07PE4R_B_Rev3.0_2013-11-11.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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2PS06017E32G28213NOSA1 2PS06017E32G28213.pdf
2PS06017E32G28213NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1100VDC 325A
Produkt ist nicht verfügbar
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IMBG65R163M1HXTMA1 Infineon-IMBG65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0cee21653
IMBG65R163M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R163M1HXTMA1 Infineon-IMBG65R163M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0cee21653
IMBG65R163M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
auf Bestellung 718 Stücke:
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AnzahlPreis
2+8.98 EUR
10+5.98 EUR
100+4.29 EUR
500+3.57 EUR
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IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 1411 Stücke:
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AnzahlPreis
3+7.71 EUR
25+4.36 EUR
100+3.57 EUR
500+2.93 EUR
1000+2.72 EUR
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IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
IRFP4468PBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 195A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 3.8W (Ta), 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1A
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V
auf Bestellung 348 Stücke:
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AnzahlPreis
2+9.45 EUR
25+5.5 EUR
100+4.55 EUR
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IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
IRFP4668PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
auf Bestellung 1821 Stücke:
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AnzahlPreis
2+12.97 EUR
25+7.63 EUR
100+6.36 EUR
500+5.34 EUR
1000+5.01 EUR
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IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
IRFP4568PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
auf Bestellung 380 Stücke:
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AnzahlPreis
2+11.62 EUR
25+6.78 EUR
100+5.62 EUR
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TD61N12KOFHPSA1 TT61N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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TT240N34KOFHPSA1 TT240N.pdf
TT240N34KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Produkt ist nicht verfügbar
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MB9BF429SAPMC-GK7E2
MB9BF429SAPMC-GK7E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Produkt ist nicht verfügbar
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MB9BF429TBGL-GE1
MB9BF429TBGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Produkt ist nicht verfügbar
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BSC205N10LS G BSC205N10LS_G.pdf
BSC205N10LS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Produkt ist nicht verfügbar
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BSC205N10LS G BSC205N10LS_G.pdf
BSC205N10LS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Produkt ist nicht verfügbar
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TC234L32F200FABKXUMA1 Infineon-TC23xL-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697b2244d2457
TC234L32F200FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC161CJ16F20FBBFXUMA3
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
Produkt ist nicht verfügbar
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F4100R12N2H3FB11BPSA1
F4100R12N2H3FB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+194.87 EUR
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F4150R12N3H3FB11BPSA1
F4150R12N3H3FB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+642.28 EUR
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F4200R12N3H3FB11BPSA1
F4200R12N3H3FB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+178.34 EUR
10+150.13 EUR
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SAK-XE167KM-48F80L AA XE167xM.pdf
SAK-XE167KM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167KM-48F80L AA XE167xM.pdf
SAF-XE167KM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F543PF-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F543PF-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F543GSPF-GS-BI24E1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F543GSPF-GS-BI24E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F543GSPMC-GSE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F543GSPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
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MB91F522FSEPMC-GSE1 MB91520_Series_RevF_12-5-17.pdf
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
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MB91F522FSDPMC-GSE1 MB91520_Series_RevF_12-5-17.pdf
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETT480N22P60HPSA1 Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e
ETT480N22P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+257.86 EUR
Mindestbestellmenge: 2 Stücke
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F445MR12W1M1B76BPSA1 F4-45MR12W1M1_B76_2-12-21.pdf
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
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IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
IAUC24N10S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.01 EUR
14+1.27 EUR
Mindestbestellmenge: 9 Stücke
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CY8C3665AXI-198 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665AXI-198
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
47+10.76 EUR
Mindestbestellmenge: 47 Stücke
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TT92N12KOFKHPSA1 TT92N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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TT92N08KOFKHPSA1 TT92N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 160 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Common Cathode - All SCRs
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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