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SAF-XC824MT-1FGIAA SAF-XC824MT-1FGIAA Infineon Technologies INFNS19723-1.pdf?t.download=true&u=5oefqw Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
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IPS65R950C6 IPS65R950C6 Infineon Technologies INFNS19166-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR
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SAB-C165-LF3V SAB-C165-LF3V Infineon Technologies INFNS21451-1.pdf?t.download=true&u=5oefqw Description: SAB-C165-LF 3V HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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SAL-XC886CLM-8FFA5VAC Infineon Technologies INFNS15605-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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SAL-XC886CM-8FFA5VAC Infineon Technologies INFNS15605-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MA2304PNSXUMA1 MA2304PNSXUMA1 Infineon Technologies Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7 Description: IC AUDIO AMP D PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
Produkt ist nicht verfügbar
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PSF21150HV1.4 Infineon Technologies Description: IPAC-X ISDN PC ADAPTER CIRCUIT
Packaging: Bulk
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IR35212MTRPBF IR35212MTRPBF Infineon Technologies infineon-ir35212mtrpbf-datasheet-en.pdf Description: IC CONTROLLER 48QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
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ADM6993FX-AD-T-1 ADM6993FX-AD-T-1 Infineon Technologies ADM6993_X_DS_green_version_1.pdf Description: IC ETHERNET CONVERTER 128QFP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-FQFP-128
Standards: 10/100 Base-T/TX/FX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Interface: Parallel
Function: Switch
Package / Case: 128-BFQFP
Packaging: Bulk
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DF300R07PE4_B6 Infineon Technologies INFNS28244-1.pdf?t.download=true&u=5oefqw Description: DFXR07P - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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F3L300R12MT4_B22 Infineon Technologies INFNS28263-1.pdf?t.download=true&u=5oefqw Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4_B23 Infineon Technologies INFNS28264-1.pdf?t.download=true&u=5oefqw Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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FD300R07PE4_B6 Infineon Technologies INFNS28305-1.pdf?t.download=true&u=5oefqw Description: FD300R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FZ1600R12HP4NPSA1 Infineon Technologies INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1650 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB130-2-1
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP50R07N2E4_B11 Infineon Technologies INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw Description: FP50R07 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies infineon-1edb8275f-datasheet-en.pdf Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Produkt ist nicht verfügbar
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2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies infineon-1edb8275f-datasheet-en.pdf Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
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100+2.75 EUR
250+2.59 EUR
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DF419MR20W3M1HFB11BPSA1 DF419MR20W3M1HFB11BPSA1 Infineon Technologies Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669 Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Part Status: Active
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MB9DF566MABEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 125
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 40x12b; D/A 2x10b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.25MB (2.25M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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MB9DF566MGBEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 125
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 40x12b; D/A 2x10b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.25MB (2.25M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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MB9DF566MAEEQ-GTK5E1 Infineon Technologies Infineon-CY9D560_Series_32_bit_Microcontroller_Traveo(TM)_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee000906572&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
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MB9DF566MADEQ-GTK5E1 Infineon Technologies Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA65R225C7 IPA65R225C7 Infineon Technologies INFNS29946-1.pdf?t.download=true&u=5oefqw Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IRLML6401TRPBF-1 Infineon Technologies irlml6401pbf-1.pdf?fileId=5546d462533600a401535668c0792636 Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IPW50R350CP IPW50R350CP Infineon Technologies INFNS16484-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
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IPA50R350CP IPA50R350CP Infineon Technologies INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Drain to Source Voltage (Vdss): 500 V
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F3L400R07ME4B22BOSA1 F3L400R07ME4B22BOSA1 Infineon Technologies Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac Description: IGBT MOD 650V 450A 1150W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C
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FZ2400R12HE4B9NPSA1 Infineon Technologies INFNS27080-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 13500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3560 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FZ2400R12HP4B9NPSA1 Infineon Technologies INFNS28638-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 3550A AG-IHMB190
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 13500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3550 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
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FZ2400R12HP4NPSA1 Infineon Technologies INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 3460A IHMB130-2-1
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3460 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB130-2-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TT370N18KOFHPSA1 TT370N18KOFHPSA1 Infineon Technologies TT370N18KOF_Rev3.2_1-12-23.pdf Description: THYR / DIODE MODULE DK
Part Status: Active
Packaging: Bulk
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IRLR4343TRL IRLR4343TRL Infineon Technologies IRLR4343%2C%20IRLU4343%2C-701.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Produkt ist nicht verfügbar
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IRFP3077PBFXKMA1 IRFP3077PBFXKMA1 Infineon Technologies Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 90W
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 2.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 90W
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 2.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 2331 Stücke:
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117+0.18 EUR
283+0.074 EUR
500+0.07 EUR
1000+0.067 EUR
2000+0.055 EUR
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IRF7420TRPBF-1 Infineon Technologies irf7420pbf-1.pdf?fileId=5546d462533600a4015355fae65e1bce Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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500+1.33 EUR
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CY8C4125FNI-S433T CY8C4125FNI-S433T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 35-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Number of I/O: 31
Part Status: Active
Supplier Device Package: 35-WLCSP (2.58x2.1)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
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5+4.32 EUR
10+2.76 EUR
100+1.87 EUR
500+1.49 EUR
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IPD390P06NMSAUMA1 IPD390P06NMSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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T1080N06TOFXPSA1 T1080N06TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IFX1021SJXUMA1 IFX1021SJXUMA1 Infineon Technologies INFNS17315-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER FULL 1/1 DSO-8
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AUIRFSA8409-7TRL AUIRFSA8409-7TRL Infineon Technologies auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSA8409-7TRL AUIRFSA8409-7TRL Infineon Technologies auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD85P04P4L06ATMA2 IPD85P04P4L06ATMA2 Infineon Technologies Infineon-IPD85P04P4L-06-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f7824648a2dc9 Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
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100+2.13 EUR
500+1.71 EUR
1000+1.58 EUR
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IPD85P04P407ATMA2 IPD85P04P407ATMA2 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD85P04P407ATMA2 IPD85P04P407ATMA2 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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500+1.29 EUR
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TDA5211 TDA5211 Infineon Technologies Description: ASK/FSK SINGLE CONVERSION RECEIV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 310MHz ~ 330MHz, 330MHz ~ 350MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Current - Receiving: 4.2mA ~ 6.5mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
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IPP08CN10L G IPP08CN10L G Infineon Technologies IPP08CN10L_G.pdf Description: MOSFET N-CH 100V 98A TO220-3
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FZ1600R12HP4 Infineon Technologies INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw Description: FZ1600R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FZ1600R17KF6CB2S1NOSA1 Infineon Technologies INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
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IDP15E60 IDP15E60 Infineon Technologies INFNS30076-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 600V 29.2A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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PEF22624EV1.3-G Infineon Technologies INFNZ01541-1.pdf?t.download=true&u=5oefqw Description: PEF22624 - SDFE-2 SYMMETRIC DSL
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TLE4263GSXUMA2 TLE4263GSXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA 8DSO-18
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE4263GSXUMA2 TLE4263GSXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA 8DSO-18
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
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4+5.55 EUR
10+4.16 EUR
25+3.81 EUR
100+3.43 EUR
250+3.25 EUR
500+3.13 EUR
1000+3.05 EUR
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IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10 Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SAF-XC824MT-1FGIAA INFNS19723-1.pdf?t.download=true&u=5oefqw
SAF-XC824MT-1FGIAA
Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Part Status: Active
Number of I/O: 17
DigiKey Programmable: Not Verified
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274+2.11 EUR
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IPS65R950C6 INFNS19166-1.pdf?t.download=true&u=5oefqw
IPS65R950C6
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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SAB-C165-LF3V INFNS21451-1.pdf?t.download=true&u=5oefqw
SAB-C165-LF3V
Hersteller: Infineon Technologies
Description: SAB-C165-LF 3V HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAL-XC886CLM-8FFA5VAC INFNS15605-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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SAL-XC886CM-8FFA5VAC INFNS15605-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MA2304PNSXUMA1 Infineon-MA2304PNS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c821f38900182921adfee00e7
MA2304PNSXUMA1
Hersteller: Infineon Technologies
Description: IC AUDIO AMP D PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
Supplier Device Package: PG-VQFN-40
Part Status: Active
Produkt ist nicht verfügbar
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PSF21150HV1.4
Hersteller: Infineon Technologies
Description: IPAC-X ISDN PC ADAPTER CIRCUIT
Packaging: Bulk
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23+23.98 EUR
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IR35212MTRPBF infineon-ir35212mtrpbf-datasheet-en.pdf
IR35212MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER 48QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
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ADM6993FX-AD-T-1 ADM6993_X_DS_green_version_1.pdf
ADM6993FX-AD-T-1
Hersteller: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-FQFP-128
Standards: 10/100 Base-T/TX/FX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Interface: Parallel
Function: Switch
Package / Case: 128-BFQFP
Packaging: Bulk
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DF300R07PE4_B6 INFNS28244-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DFXR07P - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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F3L300R12MT4_B22 INFNS28263-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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2+515.86 EUR
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F3L300R12MT4_B23 INFNS28264-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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2+515.86 EUR
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FD300R07PE4_B6 INFNS28305-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FD300R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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2+392.93 EUR
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FZ1600R12HP4NPSA1 INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1650 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB130-2-1
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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1+1226.19 EUR
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FP50R07N2E4_B11 INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP50R07 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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5+136.31 EUR
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2EDB7259YXUMA1 infineon-1edb8275f-datasheet-en.pdf
2EDB7259YXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
Produkt ist nicht verfügbar
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2EDB7259YXUMA1 infineon-1edb8275f-datasheet-en.pdf
2EDB7259YXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
auf Bestellung 1404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+3.36 EUR
25+3.07 EUR
100+2.75 EUR
250+2.59 EUR
500+2.52 EUR
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DF419MR20W3M1HFB11BPSA1 Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669
DF419MR20W3M1HFB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Part Status: Active
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1+423.04 EUR
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MB9DF566MABEQ-GTK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 125
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 40x12b; D/A 2x10b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.25MB (2.25M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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MB9DF566MGBEQ-GTK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 125
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 40x12b; D/A 2x10b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.25MB (2.25M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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MB9DF566MAEEQ-GTK5E1 Infineon-CY9D560_Series_32_bit_Microcontroller_Traveo(TM)_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee000906572&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB9DF566MADEQ-GTK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA65R225C7 INFNS29946-1.pdf?t.download=true&u=5oefqw
IPA65R225C7
Hersteller: Infineon Technologies
Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
213+2.8 EUR
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IRLML6401TRPBF-1 irlml6401pbf-1.pdf?fileId=5546d462533600a401535668c0792636
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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IPW50R350CP INFNS16484-1.pdf?t.download=true&u=5oefqw
IPW50R350CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
auf Bestellung 4320 Stücke:
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245+2.57 EUR
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IPA50R350CP INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw
IPA50R350CP
Hersteller: Infineon Technologies
Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Drain to Source Voltage (Vdss): 500 V
auf Bestellung 500 Stücke:
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F3L400R07ME4B22BOSA1 Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac
F3L400R07ME4B22BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C
auf Bestellung 290 Stücke:
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2+510.22 EUR
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FZ2400R12HE4B9NPSA1 INFNS27080-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 13500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3560 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1 Stücke:
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1+1814.75 EUR
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FZ2400R12HP4B9NPSA1 INFNS28638-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 3550A AG-IHMB190
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 13500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3550 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 19 Stücke:
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1+1738.04 EUR
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FZ2400R12HP4NPSA1 INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 3460A IHMB130-2-1
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3460 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: AG-IHMB130-2-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 44 Stücke:
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1+1495.82 EUR
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TT370N18KOFHPSA1 TT370N18KOF_Rev3.2_1-12-23.pdf
TT370N18KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Part Status: Active
Packaging: Bulk
auf Bestellung 6 Stücke:
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1+427.57 EUR
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IRLR4343TRL IRLR4343%2C%20IRLU4343%2C-701.pdf
IRLR4343TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Produkt ist nicht verfügbar
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
IRFP3077PBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.26 EUR
25+7.13 EUR
50+6.46 EUR
100+5.91 EUR
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ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 24VWM 30VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 90W
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 2.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 24VWM 30VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 90W
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 2.8pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
117+0.18 EUR
283+0.074 EUR
500+0.07 EUR
1000+0.067 EUR
2000+0.055 EUR
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IRF7420TRPBF-1 irf7420pbf-1.pdf?fileId=5546d462533600a4015355fae65e1bce
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Produkt ist nicht verfügbar
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IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.17 EUR
15000+1.09 EUR
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IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+2.78 EUR
50+2.11 EUR
100+1.88 EUR
500+1.5 EUR
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IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3030 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.92 EUR
10+2.49 EUR
100+1.68 EUR
500+1.33 EUR
1000+1.23 EUR
2000+1.13 EUR
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CY8C4125FNI-S433T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125FNI-S433T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 35-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Number of I/O: 31
Part Status: Active
Supplier Device Package: 35-WLCSP (2.58x2.1)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
auf Bestellung 923 Stücke:
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AnzahlPrivatkunde
5+4.32 EUR
10+2.76 EUR
100+1.87 EUR
500+1.49 EUR
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IPD390P06NMSAUMA1
IPD390P06NMSAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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T1080N06TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N06TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IFX1021SJXUMA1 INFNS17315-1.pdf?t.download=true&u=5oefqw
IFX1021SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Produkt ist nicht verfügbar
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AUIRFSA8409-7TRL auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb
AUIRFSA8409-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSA8409-7TRL auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb
AUIRFSA8409-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD85P04P4L06ATMA2 Infineon-IPD85P04P4L-06-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f7824648a2dc9
IPD85P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
auf Bestellung 8257 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.12 EUR
100+2.13 EUR
500+1.71 EUR
1000+1.58 EUR
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IPD85P04P407ATMA2 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.07 EUR
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IPD85P04P407ATMA2 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4940 Stücke:
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6+3.5 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.23 EUR
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TDA5211
TDA5211
Hersteller: Infineon Technologies
Description: ASK/FSK SINGLE CONVERSION RECEIV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 310MHz ~ 330MHz, 330MHz ~ 350MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Current - Receiving: 4.2mA ~ 6.5mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 360 Stücke:
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AnzahlPrivatkunde
360+2.13 EUR
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IPP08CN10L G IPP08CN10L_G.pdf
IPP08CN10L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 98A TO220-3
Produkt ist nicht verfügbar
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FZ1600R12HP4 INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FZ1600R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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1+1364 EUR
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FZ1600R17KF6CB2S1NOSA1 INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 1 Stücke:
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1+2190.8 EUR
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IDP15E60 INFNS30076-1.pdf?t.download=true&u=5oefqw
IDP15E60
Hersteller: Infineon Technologies
Description: DIODE GP 600V 29.2A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 11881 Stücke:
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348+1.64 EUR
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PEF22624EV1.3-G INFNZ01541-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PEF22624 - SDFE-2 SYMMETRIC DSL
Produkt ist nicht verfügbar
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TLE4263GSXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GSXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA 8DSO-18
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE4263GSXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GSXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA 8DSO-18
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.55 EUR
10+4.16 EUR
25+3.81 EUR
100+3.43 EUR
250+3.25 EUR
500+3.13 EUR
1000+3.05 EUR
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IPB80N06S4L07ATMA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10
IPB80N06S4L07ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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