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FZ400R65KE3NOSA1 FZ400R65KE3NOSA1 Infineon Technologies Infineon-FZ400R65KE3-DS-v02_01-en_de.pdf?fileId=db3a30433784a040013798ff06d02788 Description: IGBT MOD 6500V 800A 8350W
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 8350 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector (Ic) (Max): 800 A
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 400A
Operating Temperature: -50°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: Module
NTC Thermistor: No
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 Infineon Technologies infineon-idwd30g120c5-datasheet-en.pdf Description: DIODE SIC 1.2KV 87A PGTO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Current - Average Rectified (Io): 87A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 248 µA @ 1200 V
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2DIB0410FXUMA1 2DIB0410FXUMA1 Infineon Technologies Infineon-2DIBx41xF-DS_v01_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187370abe7d246c Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Number of Channels: 2
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5000+0.95 EUR
7500+0.94 EUR
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KITXMC45RELAXV1TOBO1 KITXMC45RELAXV1TOBO1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: RELAX KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Kit
Part Status: Active
Produkt ist nicht verfügbar
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KITXMC47RELAXLITEV1TOBO1 KITXMC47RELAXLITEV1TOBO1 Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: RELAX LITE KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4700
Platform: Relax Lite Kit
Part Status: Active
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KITXMC45RELAXLITEV1TOBO1 KITXMC45RELAXLITEV1TOBO1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
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S29AS016J70BHI040 S29AS016J70BHI040 Infineon Technologies Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC FLASH 16MBIT PARALLEL 48FBGA
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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10+3.58 EUR
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50+3.39 EUR
100+3.32 EUR
338+3.18 EUR
676+3.11 EUR
1014+3.09 EUR
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IRFB7530PBF IRFB7530PBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
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10+5.41 EUR
50+4.21 EUR
100+3.82 EUR
500+3.14 EUR
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CY7C65217-24LTXI CY7C65217-24LTXI Infineon Technologies Infineon-CY7C65210_CY7C65217_CY7C65210A_CY7C65217A_USB_BILLBOARD_CONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece5f5d48f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-f Description: IC USB TO SERIAL BRIDGE 24QFN
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Standards: USB 2.0
Protocol: USB
Current - Supply: 20mA
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, UART
Function: Controller
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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5+5.07 EUR
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25+4.31 EUR
80+3.74 EUR
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CY7C65211-24LTXIT CY7C65211-24LTXIT Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C65211-24LTXIT CY7C65211-24LTXIT Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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S80KS5122GABHV020 S80KS5122GABHV020 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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100+20 EUR
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S80KS5122GABHB020 S80KS5122GABHB020 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
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25+24.66 EUR
50+24.06 EUR
100+23.47 EUR
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CYT2B63BADQ0AZSGS CYT2B63BADQ0AZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
DigiKey Programmable: Not Verified
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
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25+12.04 EUR
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CYT2B63BADQ0AZEGS CYT2B63BADQ0AZEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
DigiKey Programmable: Not Verified
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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160+11.46 EUR
320+11.11 EUR
640+10.82 EUR
1120+10.63 EUR
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CYT2B63BADQ0AZEGST CYT2B63BADQ0AZEGST Infineon Technologies infineon-cyt2b6-datasheet-32-bit-arm-r-cortex-r--m4f-microcontroller-traveo-tm-ii-family-datasheet-en.pdf Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
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S80KS5122GABHV023 S80KS5122GABHV023 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5122GABHM023 S80KS5122GABHM023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS2563GABHV023 S80KS2563GABHV023 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Produkt ist nicht verfügbar
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S80KS5122GABHB023 S80KS5122GABHB023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S80KS5122GABHI023 S80KS5122GABHI023 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S80KS5122GABHA023 S80KS5122GABHA023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDB30E60ATMA1 IDB30E60ATMA1 Infineon Technologies IDB30E60_rev2_2G.pdf?folderId=db3a304412b407950112b438d1176bab&fileId=db3a304412b407950112b438d1a06bac Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IDP30E60XKSA1 IDP30E60XKSA1 Infineon Technologies IDP30E60_rev2_4G.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e01237a4486497bd5 Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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IDW30E60AFKSA1 IDW30E60AFKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AIDW30E60 Infineon Technologies Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.08 EUR
10+4.63 EUR
100+3.22 EUR
500+2.65 EUR
Mindestbestellmenge: 3 Stücke
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CY8C4147AZS-S465T CY8C4147AZS-S465T Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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CY8C4147AZS-S465 CY8C4147AZS-S465 Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
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IRFR5410TRRPBF IRFR5410TRRPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TLE5045ICR100HALA1 TLE5045ICR100HALA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
8+2.64 EUR
10+2.52 EUR
25+2.37 EUR
50+2.26 EUR
100+2.17 EUR
500+1.98 EUR
1000+1.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5045ICR100HALA1 TLE5045ICR100HALA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5012BE9000MS2GOTOBO1 TLE5012BE9000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5045ICIJGR050HALA1 TLE5045ICIJGR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.61 EUR
7+3.2 EUR
10+3.05 EUR
25+2.87 EUR
50+2.74 EUR
100+2.63 EUR
500+2.4 EUR
1000+2.32 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5045ICIJGR050HALA1 TLE5045ICIJGR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046ICPWM2R100HALA1 TLE5046ICPWM2R100HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046ICPWM2R100HALA1 TLE5046ICPWM2R100HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE50451ICR075XAMA1 TLE50451ICR075XAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.16 EUR
10+5.38 EUR
100+3.78 EUR
500+3.2 EUR
Mindestbestellmenge: 3 Stücke
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TLE5046ICPWM2R050HALA1 TLE5046ICPWM2R050HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046ICPWM2R050HALA1 TLE5046ICPWM2R050HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SEN MR PWM PG-SSO-2-1
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE50461ICAKLRXAMA1 TLE50461ICAKLRXAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.15 EUR
10+4 EUR
100+2.77 EUR
500+2.24 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE50461ICAKLRXAMA1 TLE50461ICAKLRXAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046ICAKERRHALA1 TLE5046ICAKERRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046ICAKERRHALA1 TLE5046ICAKERRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE5012BE1000MS2GOTOBO1 TLE5012BE1000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5012BE5000MS2GOTOBO1 TLE5012BE5000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC218N06N3X7SA1 IPC218N06N3X7SA1 Infineon Technologies DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052 Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6195 Stücke
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IPP60R099P7XKSA1 IPP60R099P7XKSA1 Infineon Technologies Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 2111 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.73 EUR
10+6.45 EUR
50+5.05 EUR
100+4.58 EUR
500+3.8 EUR
Mindestbestellmenge: 3 Stücke
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IPA60R099P6XKSA1 IPA60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
10+6.91 EUR
50+5.43 EUR
100+4.95 EUR
Mindestbestellmenge: 3 Stücke
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IPP60R099C6XKSA1 IPP60R099C6XKSA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
auf Bestellung 1417 Stücke:
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2+13.45 EUR
10+9.06 EUR
50+7.16 EUR
100+6.56 EUR
500+5.5 EUR
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 Infineon Technologies Infineon-IPP60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d481216877004 Description: MOSFET N-CH 600V 22A TO220-3
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
auf Bestellung 300 Stücke:
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10+7.97 EUR
50+6.3 EUR
100+5.76 EUR
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IPI60R099CPXKSA1 IPI60R099CPXKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 31A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPW60R099ZH Infineon Technologies Description: IPW60R099 - 600V CoolMOS N-Chann
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C024-15AXC CY7C024-15AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Memory Organization: 4K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90 Stücke
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D3900U45X172XPSA1 D3900U45X172XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO BG-D17226K
Part Status: Active
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+6597.55 EUR
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SGW20N60FKSA1 SGW20N60FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 1ED020I12FXUMA2 Infineon Technologies infineon-1ed020i12-b2-datasheet-en.pdf Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Produkt ist nicht verfügbar
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IRF300P226 IRF300P226 Infineon Technologies Infineon-IRF300P226-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016038801939199d Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
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2+18.39 EUR
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MB3773PF-G-BND-JN-ERE1 MB3773PF-G-BND-JN-ERE1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB3773PF-G-BND-JN-EFE1 MB3773PF-G-BND-JN-EFE1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FZ400R65KE3NOSA1 Infineon-FZ400R65KE3-DS-v02_01-en_de.pdf?fileId=db3a30433784a040013798ff06d02788
FZ400R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 800A 8350W
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 8350 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector (Ic) (Max): 800 A
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 400A
Operating Temperature: -50°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: Module
NTC Thermistor: No
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+2922.84 EUR
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IDWD30G120C5XKSA1 infineon-idwd30g120c5-datasheet-en.pdf
IDWD30G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 87A PGTO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Current - Average Rectified (Io): 87A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 248 µA @ 1200 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.45 EUR
30+15.98 EUR
60+14.74 EUR
120+13.7 EUR
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2DIB0410FXUMA1 Infineon-2DIBx41xF-DS_v01_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187370abe7d246c
2DIB0410FXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Number of Channels: 2
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.98 EUR
5000+0.95 EUR
7500+0.94 EUR
Mindestbestellmenge: 2500 Stücke
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KITXMC45RELAXV1TOBO1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
KITXMC45RELAXV1TOBO1
Hersteller: Infineon Technologies
Description: RELAX KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Kit
Part Status: Active
Produkt ist nicht verfügbar
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KITXMC47RELAXLITEV1TOBO1 Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
KITXMC47RELAXLITEV1TOBO1
Hersteller: Infineon Technologies
Description: RELAX LITE KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4700
Platform: Relax Lite Kit
Part Status: Active
auf Bestellung 73 Stücke:
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AnzahlPrivatkunde
1+32.24 EUR
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KITXMC45RELAXLITEV1TOBO1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
KITXMC45RELAXLITEV1TOBO1
Hersteller: Infineon Technologies
Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
auf Bestellung 54 Stücke:
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AnzahlPrivatkunde
1+62.86 EUR
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S29AS016J70BHI040 Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
S29AS016J70BHI040
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+3.58 EUR
25+3.47 EUR
50+3.39 EUR
100+3.32 EUR
338+3.18 EUR
676+3.11 EUR
1014+3.09 EUR
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IRFB7530PBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFB7530PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 665 Stücke:
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3+8.23 EUR
10+5.41 EUR
50+4.21 EUR
100+3.82 EUR
500+3.14 EUR
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CY7C65217-24LTXI Infineon-CY7C65210_CY7C65217_CY7C65210A_CY7C65217A_USB_BILLBOARD_CONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece5f5d48f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-f
CY7C65217-24LTXI
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Standards: USB 2.0
Protocol: USB
Current - Supply: 20mA
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, UART
Function: Controller
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.07 EUR
10+4.56 EUR
25+4.31 EUR
80+3.74 EUR
230+3.55 EUR
490+3.37 EUR
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CY7C65211-24LTXIT Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXIT
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C65211-24LTXIT Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXIT
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3824 Stücke:
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4+6.2 EUR
10+4.65 EUR
25+4.27 EUR
100+3.84 EUR
250+3.64 EUR
500+3.61 EUR
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S80KS5122GABHV020 S80KS5122.pdf
S80KS5122GABHV020
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 496 Stücke:
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1+23.35 EUR
10+21.68 EUR
25+21.02 EUR
50+20.5 EUR
100+20 EUR
338+19.14 EUR
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S80KS5122GABHB020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHB020
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
auf Bestellung 358 Stücke:
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AnzahlPrivatkunde
1+27.42 EUR
10+25.44 EUR
25+24.66 EUR
50+24.06 EUR
100+23.47 EUR
338+22.44 EUR
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CYT2B63BADQ0AZSGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63BADQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
DigiKey Programmable: Not Verified
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
auf Bestellung 1528 Stücke:
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2+16.7 EUR
10+12.97 EUR
25+12.04 EUR
100+11.22 EUR
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CYT2B63BADQ0AZEGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63BADQ0AZEGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
DigiKey Programmable: Not Verified
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 1274 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.75 EUR
10+13.8 EUR
25+12.83 EUR
160+11.46 EUR
320+11.11 EUR
640+10.82 EUR
1120+10.63 EUR
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CYT2B63BADQ0AZEGST infineon-cyt2b6-datasheet-32-bit-arm-r-cortex-r--m4f-microcontroller-traveo-tm-ii-family-datasheet-en.pdf
CYT2B63BADQ0AZEGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5122GABHV023 S80KS5122.pdf
S80KS5122GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S80KS5122GABHM023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHM023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S80KS2563GABHV023 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S80KS5122GABHB023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHB023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S80KS5122GABHI023 S80KS5122.pdf
S80KS5122GABHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S80KS5122GABHA023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHA023
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IDB30E60ATMA1 IDB30E60_rev2_2G.pdf?folderId=db3a304412b407950112b438d1176bab&fileId=db3a304412b407950112b438d1a06bac
IDB30E60ATMA1
Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IDP30E60XKSA1 IDP30E60_rev2_4G.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e01237a4486497bd5
IDP30E60XKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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IDW30E60AFKSA1 Part_Number_Guide_Web.pdf
IDW30E60AFKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AIDW30E60
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1
IKB20N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.08 EUR
10+4.63 EUR
100+3.22 EUR
500+2.65 EUR
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CY8C4147AZS-S465T Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4147AZS-S465T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Produkt ist nicht verfügbar
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CY8C4147AZS-S465 Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147AZS-S465
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRFR5410TRRPBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
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TLE5045ICR100HALA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE5045ICR100HALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
8+2.64 EUR
10+2.52 EUR
25+2.37 EUR
50+2.26 EUR
100+2.17 EUR
500+1.98 EUR
1000+1.9 EUR
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TLE5045ICR100HALA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE5045ICR100HALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE5012BE9000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE9000MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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TLE5045ICIJGR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICIJGR050HALA1
Hersteller: Infineon Technologies
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
7+3.2 EUR
10+3.05 EUR
25+2.87 EUR
50+2.74 EUR
100+2.63 EUR
500+2.4 EUR
1000+2.32 EUR
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TLE5045ICIJGR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICIJGR050HALA1
Hersteller: Infineon Technologies
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TLE5046ICPWM2R100HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R100HALA1
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046ICPWM2R100HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R100HALA1
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TLE50451ICR075XAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50451ICR075XAMA1
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.16 EUR
10+5.38 EUR
100+3.78 EUR
500+3.2 EUR
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TLE5046ICPWM2R050HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R050HALA1
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046ICPWM2R050HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R050HALA1
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE50461ICAKLRXAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50461ICAKLRXAMA1
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
10+4 EUR
100+2.77 EUR
500+2.24 EUR
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TLE50461ICAKLRXAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50461ICAKLRXAMA1
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5046ICAKERRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKERRHALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046ICAKERRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKERRHALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE5012BE1000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE1000MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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TLE5012BE5000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE5000MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IPC218N06N3X7SA1 DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052
IPC218N06N3X7SA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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IPP60R099P7XKSA1 Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa
IPP60R099P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 2111 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.73 EUR
10+6.45 EUR
50+5.05 EUR
100+4.58 EUR
500+3.8 EUR
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IPA60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPA60R099P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
10+6.91 EUR
50+5.43 EUR
100+4.95 EUR
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IPP60R099C6XKSA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPP60R099C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.45 EUR
10+9.06 EUR
50+7.16 EUR
100+6.56 EUR
500+5.5 EUR
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IPP60R099C7XKSA1 Infineon-IPP60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d481216877004
IPP60R099C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO220-3
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.9 EUR
10+7.97 EUR
50+6.3 EUR
100+5.76 EUR
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IPI60R099CPXKSA1 fundamentals-of-power-semiconductors
IPI60R099CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IPW60R099ZH
Hersteller: Infineon Technologies
Description: IPW60R099 - 600V CoolMOS N-Chann
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C024-15AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-15AXC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Memory Organization: 4K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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D3900U45X172XPSA1
D3900U45X172XPSA1
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-D17226K
Part Status: Active
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6597.55 EUR
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SGW20N60FKSA1 fundamentals-of-power-semiconductors
SGW20N60FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
1ED020I12FXUMA2
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Produkt ist nicht verfügbar
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IRF300P226 Infineon-IRF300P226-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016038801939199d
IRF300P226
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.39 EUR
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MB3773PF-G-BND-JN-ERE1 download
MB3773PF-G-BND-JN-ERE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB3773PF-G-BND-JN-EFE1 download
MB3773PF-G-BND-JN-EFE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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