Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 28 nach 67
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT20M16B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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| APT20M16B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M16B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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| APT20M16B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M16LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M16LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M18B2VFRG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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| APT20M18B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M18B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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| APT20M18B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M18LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M18LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M20B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M20B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M20B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M20B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M20JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M20JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT20M20JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M20JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT20M20LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M20LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT20M22JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 97A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M22JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 97A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT20M22JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M22JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT20M22JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M22JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT20M22LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced |
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APT20M22LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M22LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced |
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APT20M22LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 22mΩ Mounting: THT Gate charge: 435nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M34BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT20M34BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M34BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT20M34BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Pulsed drain current: 296A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M34SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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APT20M34SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 34mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M36BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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APT20M36BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M36BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 260A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT20M36BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 260A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M38BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M38BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M38SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M38SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 225nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M45BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M45BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M45BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M45BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M45SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M45SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20M45SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT20M45SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT20M16B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M16B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M16B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M16B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M16LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M16LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M16LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M16LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M18B2VFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M18B2VFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M18B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M18B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M18LVFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M18LVFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M18LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M18LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M20B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M20B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT20M20JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT20M20JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M20LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M20LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M20LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M22JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT20M22JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M22JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT20M22JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M22JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT20M22JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M22LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M22LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M22LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M22LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 435nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M34BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M34BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M34BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M34BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; Idm: 296A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M34SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M34SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 74A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M36BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M36BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 329W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M36BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M36BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M38BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M38BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M38SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M38SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar