Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 27 nach 67
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||
|---|---|---|---|---|---|---|---|
| APT15DQ60SG | MICROCHIP (MICROSEMI) |
 APT15DQ60SG SMD universal diodes |
Produkt ist nicht verfügbar |
||||
| APT15DS60BG | MICROCHIP (MICROSEMI) |
APT15DS60BG THT universal diodes |
Produkt ist nicht verfügbar |
||||
 |
APT15GN120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
|||
|
|
APT15GN120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
 |
APT15GN120SDQ1G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
|||
|
|
APT15GN120SDQ1G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 160ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 160ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3 Power dissipation: 250W Gate charge: 55nC Technology: POWER MOS 7®; PT Pulsed collector current: 65A Type of transistor: IGBT Turn-on time: 20ns Kind of package: tube Case: TO247-3 Turn-off time: 157ns Gate-emitter voltage: ±20V Collector current: 27A Mounting: THT Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Power dissipation: 250W Gate charge: 60nC Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Type of transistor: IGBT Turn-on time: 23ns Kind of package: tube Case: TO247-3 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 21A Mounting: THT Collector-emitter voltage: 900V |
Produkt ist nicht verfügbar |
|||
|
|
APT15GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Power dissipation: 250W Gate charge: 60nC Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Type of transistor: IGBT Turn-on time: 23ns Kind of package: tube Case: TO247-3 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 21A Mounting: THT Collector-emitter voltage: 900V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT15GT120BRDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
|||
|
|
APT15GT120BRDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT17F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
Produkt ist nicht verfügbar |
|||
|
|
APT17F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT17F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
Produkt ist nicht verfügbar |
|||
|
|
APT17F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
| APT17F120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||||
| APT17F120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
|
|
APT17F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 70A Gate charge: 122nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.58Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
|||
|
|
APT17F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 70A Gate charge: 122nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.58Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
| APT17F80S | MICROCHIP (MICROSEMI) |
APT17F80S SMD N channel transistors |
Produkt ist nicht verfügbar |
||||
|
|
APT18F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 65A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||
|
|
APT18F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 65A Power dissipation: 335W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 90nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
| APT18M100B | MICROCHIP (MICROSEMI) |
APT18M100B THT N channel transistors |
Produkt ist nicht verfügbar |
||||
| APT18M100S | MICROCHIP (MICROSEMI) |
APT18M100S SMD N channel transistors |
Produkt ist nicht verfügbar |
||||
| APT18M80B | MICROCHIP (MICROSEMI) |
APT18M80B THT N channel transistors |
Produkt ist nicht verfügbar |
||||
| APT19F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 120A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 440mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||||
| APT19F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 120A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 440mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT19M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 530mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||||
| APT19M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 530mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
|
|
APT200GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 158A Power dissipation: 682W Case: T-Max Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 1180nC Kind of package: tube Turn-on time: 130ns Turn-off time: 690ns |
Produkt ist nicht verfügbar |
|||
|
|
APT200GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 158A Power dissipation: 682W Case: T-Max Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 1180nC Kind of package: tube Turn-on time: 130ns Turn-off time: 690ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
| APT200GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Technology: Field Stop; Trench Collector current: 158A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||
| APT200GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Technology: Field Stop; Trench Collector current: 158A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT200GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Technology: Field Stop; Trench Collector current: 158A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||
| APT200GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B Technology: Field Stop; Trench Collector current: 158A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Application: for inductive load; for UPS; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT200GT60JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B Technology: NPT; Thunderblot IGBT® Collector current: 100A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||
| APT200GT60JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B Technology: NPT; Thunderblot IGBT® Collector current: 100A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
|
|
APT20GN60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
|||
|
|
APT20GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||
| APT20M11JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||
| APT20M11JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT20M11JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||
| APT20M11JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 704A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 176A On-state resistance: 11mΩ Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT20M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||
| APT20M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
 |
APT20M11JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
||
|
|
APT20M11JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 700A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 175A On-state resistance: 11mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
|
||
| APT20M120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® |
Produkt ist nicht verfügbar |
||||
| APT20M120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||
| APT20M120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® |
Produkt ist nicht verfügbar |
||||
| APT20M120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 104A Case: ISOTOP Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 15A On-state resistance: 672mΩ Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT15DQ60SG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DQ60SG SMD universal diodes
APT15DQ60SG SMD universal diodes
Produkt ist nicht verfügbar
| APT15DS60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DS60BG THT universal diodes
APT15DS60BG THT universal diodes
Produkt ist nicht verfügbar
| APT15GN120BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
| APT15GN120BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15GN120SDQ1G |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
| APT15GN120SDQ1G |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15GP60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
| APT15GP60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
| APT15GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 27A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 55nC
Technology: POWER MOS 7®; PT
Pulsed collector current: 65A
Type of transistor: IGBT
Turn-on time: 20ns
Kind of package: tube
Case: TO247-3
Turn-off time: 157ns
Gate-emitter voltage: ±20V
Collector current: 27A
Mounting: THT
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15GP90BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 60nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247-3
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 21A
Mounting: THT
Collector-emitter voltage: 900V
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 60nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247-3
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 21A
Mounting: THT
Collector-emitter voltage: 900V
Produkt ist nicht verfügbar
| APT15GP90BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 60nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247-3
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 21A
Mounting: THT
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 60nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247-3
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 21A
Mounting: THT
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15GT120BRDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
| APT15GT120BRDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 105nC
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT17F100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Produkt ist nicht verfügbar
| APT17F100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT17F100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Produkt ist nicht verfügbar
| APT17F100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D3PAK
On-state resistance: 780mΩ
Technology: POWER MOS 8®
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 1kV
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT17F120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT17F120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT17F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT17F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 70A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 70A
Gate charge: 122nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT17F80S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT17F80S SMD N channel transistors
APT17F80S SMD N channel transistors
Produkt ist nicht verfügbar
| APT18F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT18F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 65A; 335W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 65A
Power dissipation: 335W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT18M100B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT18M100B THT N channel transistors
APT18M100B THT N channel transistors
Produkt ist nicht verfügbar
| APT18M100S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT18M100S SMD N channel transistors
APT18M100S SMD N channel transistors
Produkt ist nicht verfügbar
| APT18M80B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT18M80B THT N channel transistors
APT18M80B THT N channel transistors
Produkt ist nicht verfügbar
| APT19F100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 120A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 120A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT19F100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 120A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 120A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT19M120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT19M120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 104A
Power dissipation: 545W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT200GN60B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 158A
Power dissipation: 682W
Case: T-Max
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 1180nC
Kind of package: tube
Turn-on time: 130ns
Turn-off time: 690ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 158A
Power dissipation: 682W
Case: T-Max
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 1180nC
Kind of package: tube
Turn-on time: 130ns
Turn-off time: 690ns
Produkt ist nicht verfügbar
| APT200GN60B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 158A
Power dissipation: 682W
Case: T-Max
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 1180nC
Kind of package: tube
Turn-on time: 130ns
Turn-off time: 690ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 158A
Power dissipation: 682W
Case: T-Max
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 1180nC
Kind of package: tube
Turn-on time: 130ns
Turn-off time: 690ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT200GN60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT200GN60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT200GN60JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT200GN60JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 158A; SOT227B
Technology: Field Stop; Trench
Collector current: 158A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Application: for inductive load; for UPS; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT200GT60JR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT200GT60JR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20GN60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT20GN60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT20GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
| APT20GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20GN60SDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT20GN60SDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M11JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M11JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M11JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M11JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 704A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 176A
On-state resistance: 11mΩ
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M11JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M11JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M11JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 95.22 EUR |
| APT20M11JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 700A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 175A
On-state resistance: 11mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 95.22 EUR |
| APT20M120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Produkt ist nicht verfügbar
| APT20M120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M120JCU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Produkt ist nicht verfügbar
| APT20M120JCU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 104A
Case: ISOTOP
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 15A
On-state resistance: 672mΩ
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar