Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 42 nach 67
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| APT75GP120J | MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT75GP120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 543W Technology: POWER MOS 7® Mechanical mounting: screw |
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APT75GP120JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 543W Technology: POWER MOS 7® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT75GT120JRDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: NPT; POWER MOS 7® Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT75GT120JRDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 57A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: NPT; POWER MOS 7® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT75GT120JU2 | MICROCHIP (MICROSEMI) |
APT75GT120JU2 IGBT modules |
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| APT75GT120JU3 | MICROCHIP (MICROSEMI) |
APT75GT120JU3 IGBT modules |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT75M50B2 | MICROCHIP (MICROSEMI) |
APT75M50B2 THT N channel transistors |
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| APT75M50L | MICROCHIP (MICROSEMI) |
APT75M50L THT N channel transistors |
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APT77N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
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APT77N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT77N60JC3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W Polarisation: unipolar Drain-source voltage: 600V Drain current: 77A Pulsed drain current: 231A Power dissipation: 568W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 35mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT77N60JC3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W Polarisation: unipolar Drain-source voltage: 600V Drain current: 77A Pulsed drain current: 231A Power dissipation: 568W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 35mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT77N60SC6 | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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APT77N60SC6 | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 272A Power dissipation: 481W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT7F100B | MICROCHIP (MICROSEMI) |
APT7F100B THT N channel transistors |
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| APT7F120B | MICROCHIP (MICROSEMI) |
APT7F120B THT N channel transistors |
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| APT7F120S | MICROCHIP (MICROSEMI) | APT7F120S SMD N channel transistors |
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APT7M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 335W Technology: POWER MOS 8® Pulsed drain current: 28A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 2.1Ω Gate-source voltage: ±30V |
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APT7M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 335W Technology: POWER MOS 8® Pulsed drain current: 28A Gate charge: 80nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 2.1Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT7M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V |
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APT7M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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| APT8011JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 125mΩ Semiconductor structure: single transistor |
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| APT8011JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 125mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8011JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 110mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8011JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 694W Pulsed drain current: 204A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 110mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8014JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 595W Pulsed drain current: 168A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 160mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8014JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 595W Pulsed drain current: 168A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 160mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8014JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 595W Pulsed drain current: 168A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 140mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8014JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 7® Power dissipation: 595W Pulsed drain current: 168A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 800V Drain current: 42A On-state resistance: 140mΩ Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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| APT8014L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A |
Produkt ist nicht verfügbar |
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| APT8014L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8014L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A |
Produkt ist nicht verfügbar |
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| APT8014L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Mounting: THT Case: TO264MAX Drain-source voltage: 800V Drain current: 52A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 285nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 208A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8015JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A |
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| APT8015JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Anzahl je Verpackung: 1 Stücke |
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| APT8015JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A |
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| APT8015JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W Case: ISOTOP Semiconductor structure: single transistor Mechanical mounting: screw Drain-source voltage: 800V Drain current: 44A On-state resistance: 0.15Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Anzahl je Verpackung: 1 Stücke |
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| APT8020B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX Case: TO247MAX Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET |
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| APT8020B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX Case: TO247MAX Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| APT8020B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Case: T-Max Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
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| APT8020B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Case: T-Max Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| APT8020JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω |
Produkt ist nicht verfügbar |
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| APT8020JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.22Ω Anzahl je Verpackung: 1 Stücke |
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| APT8020JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.2Ω |
Produkt ist nicht verfügbar |
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| APT8020JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W Case: ISOTOP Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 33A On-state resistance: 0.2Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT8020LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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APT8020LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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APT8020LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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APT8020LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω |
Produkt ist nicht verfügbar |
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| APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8024JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω |
Produkt ist nicht verfügbar |
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| APT8024JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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|
APT8024LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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|
APT8024LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8030JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT8030JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT75GP120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GP120JDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT75GP120JDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 543W
Technology: POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GT120JRDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT75GT120JRDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 57A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 57A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT; POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GT120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT75GT120JU2 IGBT modules
APT75GT120JU2 IGBT modules
Produkt ist nicht verfügbar
| APT75GT120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT75GT120JU3 IGBT modules
APT75GT120JU3 IGBT modules
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 56.13 EUR |
| 10+ | 54.88 EUR |
| APT75M50B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT75M50B2 THT N channel transistors
APT75M50B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT75M50L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT75M50L THT N channel transistors
APT75M50L THT N channel transistors
Produkt ist nicht verfügbar
| APT77N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT77N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT77N60JC3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT77N60JC3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 77A; ISOTOP; screw; Idm: 231A; 568W
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77A
Pulsed drain current: 231A
Power dissipation: 568W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT77N60SC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT77N60SC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT7F100B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT7F100B THT N channel transistors
APT7F100B THT N channel transistors
Produkt ist nicht verfügbar
| APT7F120B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT7F120B THT N channel transistors
APT7F120B THT N channel transistors
Produkt ist nicht verfügbar
| APT7F120S |
Hersteller: MICROCHIP (MICROSEMI)
APT7F120S SMD N channel transistors
APT7F120S SMD N channel transistors
Produkt ist nicht verfügbar
| APT7M120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT7M120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 335W
Technology: POWER MOS 8®
Pulsed drain current: 28A
Gate charge: 80nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT7M120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT7M120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 335W
Gate charge: 80nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 2.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8011JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8011JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 125mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8011JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8011JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 51A; ISOTOP; Ugs: ±30V; screw; 694W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 694W
Pulsed drain current: 204A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 51A
On-state resistance: 110mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8014JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 160mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 160mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8014JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 160mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 160mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8014JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 140mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 140mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8014JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 140mΩ
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 42A; ISOTOP; Ugs: ±30V; screw; 595W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 7®
Power dissipation: 595W
Pulsed drain current: 168A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 800V
Drain current: 42A
On-state resistance: 140mΩ
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| APT8014L2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Produkt ist nicht verfügbar
| APT8014L2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8014L2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Produkt ist nicht verfügbar
| APT8014L2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX
Mounting: THT
Case: TO264MAX
Drain-source voltage: 800V
Drain current: 52A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 285nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8015JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Produkt ist nicht verfügbar
| APT8015JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8015JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Produkt ist nicht verfügbar
| APT8015JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; ISOTOP; screw; Idm: 176A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Mechanical mounting: screw
Drain-source voltage: 800V
Drain current: 44A
On-state resistance: 0.15Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8020B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO247MAX
Case: TO247MAX
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8020B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Case: T-Max
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
Produkt ist nicht verfügbar
| APT8020JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.22Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
| APT8020JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 33A; ISOTOP; screw; Idm: 132A; 520W
Case: ISOTOP
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 33A
On-state resistance: 0.2Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8020LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8020LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
| APT8024JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Produkt ist nicht verfügbar
| APT8024JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8024LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT8030B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT8030JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar