Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4005) > Seite 43 nach 67
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
APT8020LFLLG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8020LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
|
|
|
APT8020LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Kind of package: tube Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω |
Produkt ist nicht verfügbar |
||
| APT8024JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.26Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APT8024JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω |
Produkt ist nicht verfügbar |
||
| APT8024JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W Case: ISOTOP Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 116A Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.24Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
APT8024LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
|
|
|
APT8024LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264 Case: TO264 Mounting: THT Power dissipation: 565W Polarisation: unipolar Gate charge: 160nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 124A Drain-source voltage: 800V Drain current: 31A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
| APT8030B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Case: TO247MAX Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APT8030JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||
| APT8030JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Pulsed drain current: 100A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.3Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
APT8030LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
APT8030LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8030LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
APT8030LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
APT8043BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 800V Drain current: 20A |
Produkt ist nicht verfügbar |
|
|
|
APT8043BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 800V Drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8043BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 800V Drain current: 20A |
Produkt ist nicht verfügbar |
|
|
|
APT8043BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247 Mounting: THT On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Kind of package: tube Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 800V Drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
APT8043SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK Mounting: SMD Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: D3PAK |
Produkt ist nicht verfügbar |
|
|
|
APT8043SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK Mounting: SMD Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 403W Polarisation: unipolar Gate charge: 85nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Case: D3PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT8052BFLLG | MICROCHIP (MICROSEMI) |
APT8052BFLLG THT N channel transistors |
Produkt ist nicht verfügbar |
||
| APT8052BLLG | MICROCHIP (MICROSEMI) |
APT8052BLLG THT N channel transistors |
Produkt ist nicht verfügbar |
||
|
|
APT8056BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Case: TO247-3 Power dissipation: 370W Polarisation: unipolar Gate charge: 275nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A Drain-source voltage: 800V Drain current: 16A On-state resistance: 0.56Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
|
|
|
APT8056BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Case: TO247-3 Power dissipation: 370W Polarisation: unipolar Gate charge: 275nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A Drain-source voltage: 800V Drain current: 16A On-state resistance: 0.56Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8065BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
Produkt ist nicht verfügbar |
|
|
|
APT8065BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8065BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
Produkt ist nicht verfügbar |
|
|
|
APT8065BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT8065SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
Produkt ist nicht verfügbar |
|
|
|
APT8065SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT80F60J | MICROCHIP (MICROSEMI) |
APT80F60J Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APT80GA60B | MICROCHIP (MICROSEMI) |
APT80GA60B THT IGBT transistors |
Produkt ist nicht verfügbar |
||
| APT80GA60LD40 | MICROCHIP (MICROSEMI) |
APT80GA60LD40 THT IGBT transistors |
Produkt ist nicht verfügbar |
||
| APT80GA90B | MICROCHIP (MICROSEMI) |
APT80GA90B THT IGBT transistors |
Produkt ist nicht verfügbar |
||
|
|
APT80GA90LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Gate charge: 200nC Collector-emitter voltage: 900V Collector current: 80A Gate-emitter voltage: ±30V Pulsed collector current: 239A Turn-on time: 49ns Case: TO264 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 625W Turn-off time: 320ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
|
|
|
APT80GA90LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Gate charge: 200nC Collector-emitter voltage: 900V Collector current: 80A Gate-emitter voltage: ±30V Pulsed collector current: 239A Turn-on time: 49ns Case: TO264 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 625W Turn-off time: 320ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
|
| APT80GA90S | MICROCHIP (MICROSEMI) |
APT80GA90S SMD IGBT transistors |
Produkt ist nicht verfügbar |
||
| APT80GP60B2G | MICROCHIP (MICROSEMI) |
APT80GP60B2G THT IGBT transistors |
Produkt ist nicht verfügbar |
||
| APT80GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| APT80GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APT80GP60JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| APT80GP60JDQ3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APT80M60J | MICROCHIP (MICROSEMI) |
APT80M60J Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APT84F50B2 | MICROCHIP (MICROSEMI) |
APT84F50B2 THT N channel transistors |
Produkt ist nicht verfügbar |
||
| APT84F50L | MICROCHIP (MICROSEMI) |
APT84F50L THT N channel transistors |
Produkt ist nicht verfügbar |
||
| APT84M50B2 | MICROCHIP (MICROSEMI) |
APT84M50B2 THT N channel transistors |
Produkt ist nicht verfügbar |
||
| APT84M50L | MICROCHIP (MICROSEMI) |
APT84M50L THT N channel transistors |
Produkt ist nicht verfügbar |
||
|
|
APT85GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns |
Produkt ist nicht verfügbar |
|
|
|
APT85GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| APT85GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Max. off-state voltage: 1.2kV Application: for UPS; Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||
| APT85GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Max. off-state voltage: 1.2kV Application: for UPS; Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APT85GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Max. off-state voltage: 1.2kV Application: for UPS; Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||
| APT85GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Case: SOT227B Pulsed collector current: 340A Collector current: 85A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Max. off-state voltage: 1.2kV Application: for UPS; Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
APT85GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Type of transistor: IGBT Technology: NPT; POWER MOS 8® Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns |
Produkt ist nicht verfügbar |
|
|
|
APT85GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Type of transistor: IGBT Technology: NPT; POWER MOS 8® Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
APT8DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED Application: automotive industry Mounting: THT Type of diode: rectifying Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
|
|
|
APT8DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED Application: automotive industry Mounting: THT Type of diode: rectifying Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT8020LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8020LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8020LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Kind of package: tube
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
| APT8024JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.26Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Produkt ist nicht verfügbar
| APT8024JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; ISOTOP; screw; Idm: 116A; 460W
Case: ISOTOP
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 116A
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.24Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8024LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8024LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 31A; Idm: 124A; 565W; TO264
Case: TO264
Mounting: THT
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 160nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 124A
Drain-source voltage: 800V
Drain current: 31A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT8030B2VRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Case: TO247MAX
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT8030JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 25A; ISOTOP; screw; Idm: 100A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT8030LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8030LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT8030LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 510nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8043BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
Produkt ist nicht verfügbar
| APT8043BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; TO247-3
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 800V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8043BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
Produkt ist nicht verfügbar
| APT8043BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 403W; TO247
Mounting: THT
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8043SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
Produkt ist nicht verfügbar
| APT8043SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 80A; 403W; D3PAK
Mounting: SMD
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 85nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Case: D3PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8052BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT8052BFLLG THT N channel transistors
APT8052BFLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT8052BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT8052BLLG THT N channel transistors
APT8052BLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT8056BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT8056BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Polarisation: unipolar
Gate charge: 275nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8065BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Produkt ist nicht verfügbar
| APT8065BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8065BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Produkt ist nicht verfügbar
| APT8065BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8065SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Produkt ist nicht verfügbar
| APT8065SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: D3PAK
Mounting: SMD
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT80F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80F60J Transistor modules MOSFET
APT80F60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT80GA60B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80GA60B THT IGBT transistors
APT80GA60B THT IGBT transistors
Produkt ist nicht verfügbar
| APT80GA60LD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80GA60LD40 THT IGBT transistors
APT80GA60LD40 THT IGBT transistors
Produkt ist nicht verfügbar
| APT80GA90B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80GA90B THT IGBT transistors
APT80GA90B THT IGBT transistors
Produkt ist nicht verfügbar
| APT80GA90LD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Gate charge: 200nC
Collector-emitter voltage: 900V
Collector current: 80A
Gate-emitter voltage: ±30V
Pulsed collector current: 239A
Turn-on time: 49ns
Case: TO264
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 625W
Turn-off time: 320ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Gate charge: 200nC
Collector-emitter voltage: 900V
Collector current: 80A
Gate-emitter voltage: ±30V
Pulsed collector current: 239A
Turn-on time: 49ns
Case: TO264
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 625W
Turn-off time: 320ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT80GA90LD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Gate charge: 200nC
Collector-emitter voltage: 900V
Collector current: 80A
Gate-emitter voltage: ±30V
Pulsed collector current: 239A
Turn-on time: 49ns
Case: TO264
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 625W
Turn-off time: 320ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264
Mounting: THT
Gate charge: 200nC
Collector-emitter voltage: 900V
Collector current: 80A
Gate-emitter voltage: ±30V
Pulsed collector current: 239A
Turn-on time: 49ns
Case: TO264
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 625W
Turn-off time: 320ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT80GA90S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80GA90S SMD IGBT transistors
APT80GA90S SMD IGBT transistors
Produkt ist nicht verfügbar
| APT80GP60B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80GP60B2G THT IGBT transistors
APT80GP60B2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT80GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT80GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT80GP60JDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT80GP60JDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT80M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT80M60J Transistor modules MOSFET
APT80M60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT84F50B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT84F50B2 THT N channel transistors
APT84F50B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT84F50L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT84F50L THT N channel transistors
APT84F50L THT N channel transistors
Produkt ist nicht verfügbar
| APT84M50B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT84M50B2 THT N channel transistors
APT84M50B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT84M50L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT84M50L THT N channel transistors
APT84M50L THT N channel transistors
Produkt ist nicht verfügbar
| APT85GR120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Type of transistor: IGBT
Technology: NPT Ultra Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Type of transistor: IGBT
Technology: NPT Ultra Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Produkt ist nicht verfügbar
| APT85GR120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Type of transistor: IGBT
Technology: NPT Ultra Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Type of transistor: IGBT
Technology: NPT Ultra Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT85GR120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT85GR120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT85GR120JD60 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT85GR120JD60 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Case: SOT227B
Pulsed collector current: 340A
Collector current: 85A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Max. off-state voltage: 1.2kV
Application: for UPS; Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT85GR120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Type of transistor: IGBT
Technology: NPT; POWER MOS 8®
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Type of transistor: IGBT
Technology: NPT; POWER MOS 8®
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Produkt ist nicht verfügbar
| APT85GR120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Type of transistor: IGBT
Technology: NPT; POWER MOS 8®
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Type of transistor: IGBT
Technology: NPT; POWER MOS 8®
Collector-emitter voltage: 1.2kV
Collector current: 85A
Power dissipation: 962W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Turn-on time: 113ns
Turn-off time: 445ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT8DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| APT8DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220-2; 1.14÷1.4mm; FRED
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar