Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 36 nach 67
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT46GA90JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B Case: SOT227B Pulsed collector current: 136A Collector current: 46A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 900V Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
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| APT47F60J | MICROCHIP (MICROSEMI) |
APT47F60J Transistor modules MOSFET |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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| APT47GA60JD40 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT47M60J | MICROCHIP (MICROSEMI) |
APT47M60J Transistor modules MOSFET |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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APT47N60BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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APT47N60SC3G | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT48M80B2 | MICROCHIP (MICROSEMI) |
APT48M80B2 THT N channel transistors |
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| APT48M80L | MICROCHIP (MICROSEMI) |
APT48M80L THT N channel transistors |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 43nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 4.2Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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APT4F120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 43nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 4.2Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT4F120S | MICROCHIP (MICROSEMI) |
APT4F120S SMD N channel transistors |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 43nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 3.8Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar |
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APT4M120K | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 43nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 15A Drain-source voltage: 1.2kV Drain current: 3A On-state resistance: 3.8Ω Type of transistor: N-MOSFET Power dissipation: 225W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT5010B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT5010B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 33A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
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APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
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APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| APT46GA90JD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT46GA90JD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 46A; SOT227B
Case: SOT227B
Pulsed collector current: 136A
Collector current: 46A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 900V
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT47F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT47F60J Transistor modules MOSFET
APT47F60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT47GA60JD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT47GA60JD40 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT47M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
APT47M60J Transistor modules MOSFET
APT47M60J Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT47N60BC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25 EUR |
| 4+ | 22.87 EUR |
| APT47N60BC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25 EUR |
| 4+ | 22.87 EUR |
| APT47N60SC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT47N60SC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: D3PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT48M80B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT48M80B2 THT N channel transistors
APT48M80B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT48M80L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT48M80L THT N channel transistors
APT48M80L THT N channel transistors
Produkt ist nicht verfügbar
| APT4F120K |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.03 EUR |
| 13+ | 5.81 EUR |
| APT4F120K |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.03 EUR |
| 13+ | 5.81 EUR |
| APT4F120S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT4F120S SMD N channel transistors
APT4F120S SMD N channel transistors
Produkt ist nicht verfügbar
| APT4M120K |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT4M120K |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Case: TO220-3
Gate charge: 43nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 15A
Drain-source voltage: 1.2kV
Drain current: 3A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Power dissipation: 225W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010B2VFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010B2VFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010B2VRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010B2VRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLLU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JLLU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLLU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JLLU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 52.54 EUR |
| APT5010JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 52.54 EUR |
| APT5010JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 33A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5015BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5015BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015SVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar