Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4027) > Seite 38 nach 68
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
APT5024BLLG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 221nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 221nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.21µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.21µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
 |
APT5024SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 43nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 43nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5024SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5028BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Power dissipation: 250W Polarisation: unipolar Gate charge: 175nC Technology: POWER MOS 5® Kind of channel: enhanced Pulsed drain current: 80A Gate-source voltage: ±30V Mounting: THT Case: TO247-3 Drain-source voltage: 500V Drain current: 20A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT5028BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Power dissipation: 250W Polarisation: unipolar Gate charge: 175nC Technology: POWER MOS 5® Kind of channel: enhanced Pulsed drain current: 80A Gate-source voltage: ±30V Mounting: THT Case: TO247-3 Drain-source voltage: 500V Drain current: 20A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50DF170HJ | MICROCHIP (MICROSEMI) |
APT50DF170HJ Sing. ph. diode bridge rectif. - others |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GF120B2RG | MICROCHIP (MICROSEMI) |
APT50GF120B2RG THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GF120JRD | MICROCHIP (MICROSEMI) | APT50GF120JRD IGBT modules |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GF120JRDQ3 | MICROCHIP (MICROSEMI) |
APT50GF120JRDQ3 IGBT modules |
Produkt ist nicht verfügbar |
||||||||||||
 |
APT50GF120LRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 781W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 68ns Turn-off time: 395ns |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GF120LRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 781W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 68ns Turn-off time: 395ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Technology: Field Stop; Trench Collector current: 50A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Application: motors Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Technology: Field Stop; Trench Collector current: 50A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Application: motors Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
APT50GN120B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GN120B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50GN120L2DQ2G | MICROCHIP (MICROSEMI) |
APT50GN120L2DQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
|
|
APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50GN60BDQ3G | MICROCHIP (MICROSEMI) |
APT50GN60BDQ3G THT IGBT transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||
|
|
APT50GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
APT50GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
| APT50GP60B2DQ2G | MICROCHIP (MICROSEMI) |
APT50GP60B2DQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GP60BG | MICROCHIP (MICROSEMI) |
APT50GP60BG THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
APT50GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: T-Max Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: T-Max Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50GR120JD30 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GR120JD30 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
APT50GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: TO264 Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: TO264 Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GT120B2RG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |
|||||||||||
|
|
APT50GT120B2RG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
| APT50GT120JU2 | MICROCHIP (MICROSEMI) |
APT50GT120JU2 IGBT modules |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GT120JU3 | MICROCHIP (MICROSEMI) |
APT50GT120JU3 IGBT modules |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GT120LRDQ2G | MICROCHIP (MICROSEMI) |
APT50GT120LRDQ2G THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50GT120LRG | MICROCHIP (MICROSEMI) |
APT50GT120LRG THT IGBT transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M38JFLL | MICROCHIP (MICROSEMI) | APT50M38JFLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M38JLL | MICROCHIP (MICROSEMI) |
APT50M38JLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M50JFLL | MICROCHIP (MICROSEMI) | APT50M50JFLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M50JLL | MICROCHIP (MICROSEMI) |
APT50M50JLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M50JVFR | MICROCHIP (MICROSEMI) |
APT50M50JVFR Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M50JVR | MICROCHIP (MICROSEMI) |
APT50M50JVR Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M50L2LLG | MICROCHIP (MICROSEMI) |
APT50M50L2LLG THT N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M60L2VRG | MICROCHIP (MICROSEMI) | APT50M60L2VRG THT N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M65B2FLLG | MICROCHIP (MICROSEMI) |
APT50M65B2FLLG THT N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M65JFLL | MICROCHIP (MICROSEMI) |
APT50M65JFLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M65JLL | MICROCHIP (MICROSEMI) |
APT50M65JLL Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| APT50M65LFLLG | MICROCHIP (MICROSEMI) |
APT50M65LFLLG THT N channel transistors |
Produkt ist nicht verfügbar |
| APT5024BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5024BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5024BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5024BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5024BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5024BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5024SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5024SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5024SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5024SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5028BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 175nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Pulsed drain current: 80A
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Drain-source voltage: 500V
Drain current: 20A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 175nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Pulsed drain current: 80A
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Drain-source voltage: 500V
Drain current: 20A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT5028BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 175nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Pulsed drain current: 80A
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Drain-source voltage: 500V
Drain current: 20A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 175nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Pulsed drain current: 80A
Gate-source voltage: ±30V
Mounting: THT
Case: TO247-3
Drain-source voltage: 500V
Drain current: 20A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50DF170HJ |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50DF170HJ Sing. ph. diode bridge rectif. - others
APT50DF170HJ Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
| APT50GF120B2RG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GF120B2RG THT IGBT transistors
APT50GF120B2RG THT IGBT transistors
Produkt ist nicht verfügbar
| APT50GF120JRD |
Hersteller: MICROCHIP (MICROSEMI)
APT50GF120JRD IGBT modules
APT50GF120JRD IGBT modules
Produkt ist nicht verfügbar
| APT50GF120JRDQ3 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GF120JRDQ3 IGBT modules
APT50GF120JRDQ3 IGBT modules
Produkt ist nicht verfügbar
| APT50GF120LRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
| APT50GF120LRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GLQ65JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT50GLQ65JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GN120B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Produkt ist nicht verfügbar
| APT50GN120B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GN120L2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GN120L2DQ2G THT IGBT transistors
APT50GN120L2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT50GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Produkt ist nicht verfügbar
| APT50GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GN60BDQ3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GN60BDQ3G THT IGBT transistors
APT50GN60BDQ3G THT IGBT transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 10+ | 18.05 EUR |
| APT50GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| APT50GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 30+ | 9.48 EUR |
| APT50GP60B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GP60B2DQ2G THT IGBT transistors
APT50GP60B2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT50GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GP60BG THT IGBT transistors
APT50GP60BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT50GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT50GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT50GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GR120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Produkt ist nicht verfügbar
| APT50GR120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GR120JD30 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT50GR120JD30 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GR120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Produkt ist nicht verfügbar
| APT50GR120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GT120B2RDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Produkt ist nicht verfügbar
| APT50GT120B2RDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GT120B2RG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Produkt ist nicht verfügbar
| APT50GT120B2RG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT50GT120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GT120JU2 IGBT modules
APT50GT120JU2 IGBT modules
Produkt ist nicht verfügbar
| APT50GT120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GT120JU3 IGBT modules
APT50GT120JU3 IGBT modules
Produkt ist nicht verfügbar
| APT50GT120LRDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GT120LRDQ2G THT IGBT transistors
APT50GT120LRDQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT50GT120LRG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50GT120LRG THT IGBT transistors
APT50GT120LRG THT IGBT transistors
Produkt ist nicht verfügbar
| APT50M38JFLL |
Hersteller: MICROCHIP (MICROSEMI)
APT50M38JFLL Transistor modules MOSFET
APT50M38JFLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M38JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M38JLL Transistor modules MOSFET
APT50M38JLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M50JFLL |
Hersteller: MICROCHIP (MICROSEMI)
APT50M50JFLL Transistor modules MOSFET
APT50M50JFLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M50JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M50JLL Transistor modules MOSFET
APT50M50JLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M50JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M50JVFR Transistor modules MOSFET
APT50M50JVFR Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M50JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M50JVR Transistor modules MOSFET
APT50M50JVR Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M50L2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M50L2LLG THT N channel transistors
APT50M50L2LLG THT N channel transistors
Produkt ist nicht verfügbar
| APT50M60L2VRG |
Hersteller: MICROCHIP (MICROSEMI)
APT50M60L2VRG THT N channel transistors
APT50M60L2VRG THT N channel transistors
Produkt ist nicht verfügbar
| APT50M65B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M65B2FLLG THT N channel transistors
APT50M65B2FLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT50M65JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M65JFLL Transistor modules MOSFET
APT50M65JFLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M65JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M65JLL Transistor modules MOSFET
APT50M65JLL Transistor modules MOSFET
Produkt ist nicht verfügbar
| APT50M65LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT50M65LFLLG THT N channel transistors
APT50M65LFLLG THT N channel transistors
Produkt ist nicht verfügbar