Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4025) > Seite 34 nach 68
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| APT32M80J | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.19Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT32M80J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 173A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.19Ω Power dissipation: 543W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT33GF120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
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APT33GF120B2RDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC Anzahl je Verpackung: 1 Stücke |
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APT33GF120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3 Type of transistor: IGBT Technology: Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 33A Power dissipation: 297W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 104A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 85ns Turn-off time: 284ns |
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APT33GF120BRG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3 Type of transistor: IGBT Technology: Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 33A Power dissipation: 297W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 104A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 85ns Turn-off time: 284ns Anzahl je Verpackung: 1 Stücke |
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APT33GF120LRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
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APT33GF120LRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT34F100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
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| APT34F100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
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APT34F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264 Mounting: THT Case: TO264 On-state resistance: 0.38Ω Pulsed drain current: 140A Power dissipation: 1135W Gate charge: 305nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 21A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V |
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APT34F100L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264 Mounting: THT Case: TO264 On-state resistance: 0.38Ω Pulsed drain current: 140A Power dissipation: 1135W Gate charge: 305nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 21A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT34F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced |
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APT34F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT34F60S | MICROCHIP (MICROSEMI) |
APT34F60S SMD N channel transistors |
Produkt ist nicht verfügbar |
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| APT34M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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| APT34M120J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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APT34M60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced |
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APT34M60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 124A Power dissipation: 624W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 165nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT34M60S | MICROCHIP (MICROSEMI) |
APT34M60S SMD N channel transistors |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT35GA90B | MICROCHIP (MICROSEMI) |
APT35GA90B THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode |
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APT35GA90BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Collector current: 35A Power dissipation: 290W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 105A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 25ns Turn-off time: 298ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT35GN120BG | MICROCHIP (MICROSEMI) |
APT35GN120BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT35GN120L2DQ2G | MICROCHIP (MICROSEMI) |
APT35GN120L2DQ2G THT IGBT transistors |
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| APT35GN120SG | MICROCHIP (MICROSEMI) |
APT35GN120SG SMD IGBT transistors |
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| APT35GP120B2D2G | MICROCHIP (MICROSEMI) | APT35GP120B2D2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT35GP120B2DQ2G | MICROCHIP (MICROSEMI) |
APT35GP120B2DQ2G THT IGBT transistors |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT35GP120BG | MICROCHIP (MICROSEMI) |
APT35GP120BG THT IGBT transistors |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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APT35GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 29A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT35GP120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 29A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT35GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 26A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT35GP120JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 26A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APT35GT120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 55A Topology: boost chopper Technology: Field Stop; Trench |
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| APT35GT120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 55A Topology: boost chopper Technology: Field Stop; Trench Anzahl je Verpackung: 1 Stücke |
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| APT35GT120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 35A Topology: buck chopper Technology: Field Stop; Trench |
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| APT35GT120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 35A Topology: buck chopper Technology: Field Stop; Trench Anzahl je Verpackung: 1 Stücke |
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| APT36GA60B | MICROCHIP (MICROSEMI) |
APT36GA60B THT IGBT transistors |
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| APT36GA60BD15 | MICROCHIP (MICROSEMI) |
APT36GA60BD15 THT IGBT transistors |
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| APT36GA60SD15 | MICROCHIP (MICROSEMI) |
APT36GA60SD15 SMD IGBT transistors |
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APT37F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3 Drain-source voltage: 500V Drain current: 24A Case: TO247-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.15Ω Pulsed drain current: 115A Power dissipation: 520W Technology: POWER MOS 8® Kind of channel: enhanced Gate charge: 145nC Gate-source voltage: ±30V Type of transistor: N-MOSFET |
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APT37F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3 Drain-source voltage: 500V Drain current: 24A Case: TO247-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.15Ω Pulsed drain current: 115A Power dissipation: 520W Technology: POWER MOS 8® Kind of channel: enhanced Gate charge: 145nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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APT37F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK Drain-source voltage: 500V Drain current: 24A Case: D3PAK Mounting: SMD Polarisation: unipolar On-state resistance: 0.15Ω Pulsed drain current: 115A Power dissipation: 520W Technology: POWER MOS 8® Kind of channel: enhanced Gate charge: 145nC Gate-source voltage: ±30V Type of transistor: N-MOSFET |
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APT37F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK Drain-source voltage: 500V Drain current: 24A Case: D3PAK Mounting: SMD Polarisation: unipolar On-state resistance: 0.15Ω Pulsed drain current: 115A Power dissipation: 520W Technology: POWER MOS 8® Kind of channel: enhanced Gate charge: 145nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| APT37M100B2 | MICROCHIP (MICROSEMI) |
APT37M100B2 THT N channel transistors |
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| APT37M100L | MICROCHIP (MICROSEMI) |
APT37M100L THT N channel transistors |
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| APT38F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 175A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT38F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 175A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT38F80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Mounting: THT Case: TO247MAX Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 26A |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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APT38F80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Mounting: THT Case: TO247MAX Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 26A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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APT38F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264 Mounting: THT Case: TO264 Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 26A |
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APT38F80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264 Mounting: THT Case: TO264 Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 26A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT38M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 175A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 357W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT38M50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 175A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 357W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT32M80J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT32M80J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 20A; ISOTOP; screw; Idm: 173A; 543W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 173A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.19Ω
Power dissipation: 543W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT33GF120B2RDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Produkt ist nicht verfügbar
| APT33GF120B2RDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Type of transistor: IGBT
Collector current: 30A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT33GF120BRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
Produkt ist nicht verfügbar
| APT33GF120BRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 297W; TO247-3
Type of transistor: IGBT
Technology: Fast IGBT
Collector-emitter voltage: 1.2kV
Collector current: 33A
Power dissipation: 297W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 104A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 284ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT33GF120LRDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Produkt ist nicht verfügbar
| APT33GF120LRDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264
Type of transistor: IGBT
Collector current: 30A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Turn-on time: 31ns
Turn-off time: 355ns
Collector-emitter voltage: 1.2kV
Power dissipation: 357W
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT34F100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34F100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 140A
Power dissipation: 1135W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 380mΩ
Mounting: THT
Gate charge: 305nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34F100L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
On-state resistance: 0.38Ω
Pulsed drain current: 140A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
On-state resistance: 0.38Ω
Pulsed drain current: 140A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT34F100L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
On-state resistance: 0.38Ω
Pulsed drain current: 140A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO264
Mounting: THT
Case: TO264
On-state resistance: 0.38Ω
Pulsed drain current: 140A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT34F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT34F60S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT34F60S SMD N channel transistors
APT34F60S SMD N channel transistors
Produkt ist nicht verfügbar
| APT34M120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT34M120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw
Case: ISOTOP
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 290mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 960W
Pulsed drain current: 195A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT34M60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34M60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 124A; 624W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 124A
Power dissipation: 624W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 165nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT34M60S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT34M60S SMD N channel transistors
APT34M60S SMD N channel transistors
Produkt ist nicht verfügbar
| APT34N80B2C3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34N80B2C3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT34N80LC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT34N80LC3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT35GA90B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GA90B THT IGBT transistors
APT35GA90B THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GA90BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT35GA90BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 35A; 290W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 8®; PT
Collector-emitter voltage: 900V
Collector current: 35A
Power dissipation: 290W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 298ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT35GN120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GN120BG THT IGBT transistors
APT35GN120BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GN120L2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GN120L2DQ2G THT IGBT transistors
APT35GN120L2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GN120SG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GN120SG SMD IGBT transistors
APT35GN120SG SMD IGBT transistors
Produkt ist nicht verfügbar
| APT35GP120B2D2G |
Hersteller: MICROCHIP (MICROSEMI)
APT35GP120B2D2G THT IGBT transistors
APT35GP120B2D2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT35GP120B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GP120B2DQ2G THT IGBT transistors
APT35GP120B2DQ2G THT IGBT transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 74.8 EUR |
| APT35GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT35GP120BG THT IGBT transistors
APT35GP120BG THT IGBT transistors
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 30.13 EUR |
| 4+ | 19.63 EUR |
| APT35GP120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 29A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 29A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| APT35GP120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 29A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 29A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| APT35GP120JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 26A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 26A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT35GP120JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 26A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 26A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT35GT120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 55A
Topology: boost chopper
Technology: Field Stop; Trench
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 55A
Topology: boost chopper
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
| APT35GT120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 55A
Topology: boost chopper
Technology: Field Stop; Trench
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 55A
Topology: boost chopper
Technology: Field Stop; Trench
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT35GT120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper
Technology: Field Stop; Trench
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
| APT35GT120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper
Technology: Field Stop; Trench
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Mechanical mounting: screw
Electrical mounting: screw
Pulsed collector current: 80A
Application: motors
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper
Technology: Field Stop; Trench
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT36GA60B |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60B THT IGBT transistors
APT36GA60B THT IGBT transistors
Produkt ist nicht verfügbar
| APT36GA60BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60BD15 THT IGBT transistors
APT36GA60BD15 THT IGBT transistors
Produkt ist nicht verfügbar
| APT36GA60SD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT36GA60SD15 SMD IGBT transistors
APT36GA60SD15 SMD IGBT transistors
Produkt ist nicht verfügbar
| APT37F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Drain-source voltage: 500V
Drain current: 24A
Case: TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Drain-source voltage: 500V
Drain current: 24A
Case: TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT37F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Drain-source voltage: 500V
Drain current: 24A
Case: TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; TO247-3
Drain-source voltage: 500V
Drain current: 24A
Case: TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT37F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT37F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; Idm: 115A; 520W; D3PAK
Drain-source voltage: 500V
Drain current: 24A
Case: D3PAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.15Ω
Pulsed drain current: 115A
Power dissipation: 520W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate charge: 145nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT37M100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT37M100B2 THT N channel transistors
APT37M100B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT37M100L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT37M100L THT N channel transistors
APT37M100L THT N channel transistors
Produkt ist nicht verfügbar
| APT38F50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT38F50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38F80B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Mounting: THT
Case: TO247MAX
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Mounting: THT
Case: TO247MAX
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.71 EUR |
| 10+ | 25.2 EUR |
| APT38F80B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Mounting: THT
Case: TO247MAX
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Mounting: THT
Case: TO247MAX
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.71 EUR |
| 10+ | 25.2 EUR |
| APT38F80L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Produkt ist nicht verfügbar
| APT38F80L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW; TO264
Mounting: THT
Case: TO264
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38M50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT38M50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar