Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4005) > Seite 29 nach 67
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APT20M36BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 260A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M38BVRG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced |
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APT20M38BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Pulsed drain current: 268A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M38SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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APT20M38SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 200V Drain current: 67A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 225nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M45BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
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APT20M45BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M45BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
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APT20M45BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M45SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced |
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APT20M45SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT20M45SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced |
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APT20M45SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 56A Pulsed drain current: 224A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT21M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.38Ω Pulsed drain current: 120A Power dissipation: 462W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
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| APT21M100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.38Ω Pulsed drain current: 120A Power dissipation: 462W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APT22F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 15A On-state resistance: 0.38Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 140A |
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| APT22F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 15A On-state resistance: 0.38Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 140A Anzahl je Verpackung: 1 Stücke |
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| APT22F120B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW Mounting: THT Case: TO247MAX Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A |
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| APT22F120B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW Mounting: THT Case: TO247MAX Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A Anzahl je Verpackung: 1 Stücke |
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APT22F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264 Mounting: THT Case: TO264 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A |
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APT22F120L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264 Mounting: THT Case: TO264 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A Anzahl je Verpackung: 1 Stücke |
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APT22F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A |
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APT22F80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A Anzahl je Verpackung: 1 Stücke |
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APT22F80S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK Mounting: SMD Case: D3PAK Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A |
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APT22F80S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK Mounting: SMD Case: D3PAK Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A Anzahl je Verpackung: 1 Stücke |
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APT23F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 80A Power dissipation: 415W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT23F60B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 80A Power dissipation: 415W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT24F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3 Mounting: THT Drain-source voltage: 500V Drain current: 15A On-state resistance: 240mΩ Gate charge: 90nC Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 335W Pulsed drain current: 82A Gate-source voltage: ±30V Type of transistor: N-MOSFET |
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APT24F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3 Mounting: THT Drain-source voltage: 500V Drain current: 15A On-state resistance: 240mΩ Gate charge: 90nC Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 335W Pulsed drain current: 82A Gate-source voltage: ±30V Type of transistor: N-MOSFET |
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| APT24M120B2 | MICROCHIP (MICROSEMI) |
APT24M120B2 THT N channel transistors |
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| APT24M120L | MICROCHIP (MICROSEMI) |
APT24M120L THT N channel transistors |
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APT24M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 625W Pulsed drain current: 85A Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 800V Drain current: 16A On-state resistance: 390mΩ Gate charge: 150nC |
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APT24M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 625W Pulsed drain current: 85A Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 800V Drain current: 16A On-state resistance: 390mΩ Gate charge: 150nC |
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| APT24M80S | MICROCHIP (MICROSEMI) |
APT24M80S SMD N channel transistors |
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| APT25GLQ120JCU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Topology: boost chopper Electrical mounting: screw Technology: Field Stop; Trench Mechanical mounting: screw Collector current: 25A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 50A Application: motors |
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| APT25GLQ120JCU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Topology: boost chopper Electrical mounting: screw Technology: Field Stop; Trench Mechanical mounting: screw Collector current: 25A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 50A Application: motors Anzahl je Verpackung: 1 Stücke |
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APT25GN120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max Case: T-Max Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
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APT25GN120B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max Case: T-Max Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
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APT25GN120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3 Case: TO247-3 Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
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APT25GN120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3 Case: TO247-3 Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
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APT25GN120SG | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
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APT25GN120SG | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
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APT25GP120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
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APT25GP120BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A Anzahl je Verpackung: 1 Stücke |
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APT25GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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APT25GP120BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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APT25GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A |
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APT25GP90BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A Anzahl je Verpackung: 1 Stücke |
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APT25GP90BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A |
Produkt ist nicht verfügbar |
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APT25GP90BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 36A Type of transistor: IGBT Turn-on time: 29ns Turn-off time: 190ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 900V Pulsed collector current: 110A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
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APT25GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GR120BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
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APT25GR120BD15 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
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APT25GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GR120SD15 | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
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APT25GR120SD15 | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GT120BRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
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APT25GT120BRDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3 Type of transistor: IGBT Technology: Thunderblot IGBT® Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 347W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-on time: 41ns Turn-off time: 0.22µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APT20M36BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 260A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M38BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M38BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 67A; Idm: 268A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Pulsed drain current: 268A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 225nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M38SVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M38SVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 67A; 370W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 67A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45BVFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45BVFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45BVRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT20M45SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT20M45SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 56A; Idm: 224A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT21M100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.38Ω
Pulsed drain current: 120A
Power dissipation: 462W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.38Ω
Pulsed drain current: 120A
Power dissipation: 462W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT21M100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.38Ω
Pulsed drain current: 120A
Power dissipation: 462W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 13A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.38Ω
Pulsed drain current: 120A
Power dissipation: 462W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT22F100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 15A
On-state resistance: 0.38Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 140A
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 15A
On-state resistance: 0.38Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 140A
Produkt ist nicht verfügbar
| APT22F100J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 15A
On-state resistance: 0.38Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 140A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 15A; ISOTOP; screw; Idm: 140A; 545W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 15A
On-state resistance: 0.38Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 140A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT22F120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW
Mounting: THT
Case: TO247MAX
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW
Mounting: THT
Case: TO247MAX
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
| APT22F120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW
Mounting: THT
Case: TO247MAX
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW
Mounting: THT
Case: TO247MAX
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT22F120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
| APT22F120L |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 260nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 90A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT22F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Produkt ist nicht verfügbar
| APT22F80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT22F80S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Produkt ist nicht verfügbar
| APT22F80S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Drain-source voltage: 800V
Drain current: 15A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 625W
Polarisation: unipolar
Gate charge: 150nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 85A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT23F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 415W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 415W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT23F60B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 415W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 415W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 415W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT24F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3
Mounting: THT
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 240mΩ
Gate charge: 90nC
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 335W
Pulsed drain current: 82A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3
Mounting: THT
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 240mΩ
Gate charge: 90nC
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 335W
Pulsed drain current: 82A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT24F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3
Mounting: THT
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 240mΩ
Gate charge: 90nC
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 335W
Pulsed drain current: 82A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; Idm: 82A; 335W; TO247-3
Mounting: THT
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 240mΩ
Gate charge: 90nC
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 335W
Pulsed drain current: 82A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT24M120B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT24M120B2 THT N channel transistors
APT24M120B2 THT N channel transistors
Produkt ist nicht verfügbar
| APT24M120L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT24M120L THT N channel transistors
APT24M120L THT N channel transistors
Produkt ist nicht verfügbar
| APT24M80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 625W
Pulsed drain current: 85A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 390mΩ
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 625W
Pulsed drain current: 85A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 390mΩ
Gate charge: 150nC
Produkt ist nicht verfügbar
| APT24M80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 625W
Pulsed drain current: 85A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 390mΩ
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 85A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Kind of channel: enhanced
Technology: POWER MOS 8®
Power dissipation: 625W
Pulsed drain current: 85A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 16A
On-state resistance: 390mΩ
Gate charge: 150nC
Produkt ist nicht verfügbar
| APT24M80S |
|
Hersteller: MICROCHIP (MICROSEMI)
APT24M80S SMD N channel transistors
APT24M80S SMD N channel transistors
Produkt ist nicht verfügbar
| APT25GLQ120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Collector current: 25A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Application: motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Collector current: 25A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Application: motors
Produkt ist nicht verfügbar
| APT25GLQ120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Collector current: 25A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Application: motors
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Topology: boost chopper
Electrical mounting: screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Collector current: 25A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Application: motors
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GN120B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Case: T-Max
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Case: T-Max
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Produkt ist nicht verfügbar
| APT25GN120B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Case: T-Max
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Case: T-Max
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GN120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3
Case: TO247-3
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3
Case: TO247-3
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Produkt ist nicht verfügbar
| APT25GN120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3
Case: TO247-3
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; TO247-3
Case: TO247-3
Power dissipation: 272W
Technology: Field Stop
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GN120SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Produkt ist nicht verfügbar
| APT25GN120SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK
Case: D3PAK
Power dissipation: 272W
Gate charge: 155nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 39ns
Turn-off time: 560ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GP120BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Produkt ist nicht verfügbar
| APT25GP120BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 200ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.12 EUR |
| 5+ | 17.13 EUR |
| APT25GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 33A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 90A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.12 EUR |
| 5+ | 17.13 EUR |
| APT25GP90BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Produkt ist nicht verfügbar
| APT25GP90BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GP90BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Produkt ist nicht verfügbar
| APT25GP90BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 36A; 417W; TO247-3
Case: TO247-3
Power dissipation: 417W
Technology: POWER MOS 7®; PT
Gate charge: 110nC
Kind of package: tube
Collector current: 36A
Type of transistor: IGBT
Turn-on time: 29ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Mounting: THT
Collector-emitter voltage: 900V
Pulsed collector current: 110A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GR120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| APT25GR120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GR120BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| APT25GR120BD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Case: TO247-3
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GR120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| APT25GR120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GR120SD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| APT25GR120SD15 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT25GT120BRDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
| APT25GT120BRDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 347W; TO247-3
Type of transistor: IGBT
Technology: Thunderblot IGBT®
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 347W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 41ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar