Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 26 nach 67
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APT14F100B | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V |
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APT14F100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT14F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A |
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APT14F100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 980mΩ Gate-source voltage: ±30V Pulsed drain current: 56A Anzahl je Verpackung: 1 Stücke |
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APT14M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V |
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APT14M100B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT14M100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V |
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APT14M100S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT14M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
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APT14M120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A Anzahl je Verpackung: 1 Stücke |
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APT14M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
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APT14M120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A Anzahl je Verpackung: 1 Stücke |
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| APT150GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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| APT150GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT150GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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| APT150GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT150GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max Type of transistor: IGBT Collector current: 123A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Kind of package: tube Gate charge: 970nC |
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APT150GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max Type of transistor: IGBT Collector current: 123A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Kind of package: tube Gate charge: 970nC Anzahl je Verpackung: 1 Stücke |
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| APT150GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT150GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT150GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT150GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT150GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC |
Produkt ist nicht verfügbar |
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APT150GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT150GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 90A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT150GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 90A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT15D100BCTG | MICROCHIP (MICROSEMI) |
APT15D100BCTG THT universal diodes |
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APT15D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 15A Reverse recovery time: 28ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 1.9V |
Produkt ist nicht verfügbar |
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APT15D100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 15A Reverse recovery time: 28ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 1.9V Anzahl je Verpackung: 1 Stücke |
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| APT15D100BHBG | MICROCHIP (MICROSEMI) |
APT15D100BHBG THT universal diodes |
Produkt ist nicht verfügbar |
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APT15D100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 1.9V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 28ns |
Produkt ist nicht verfügbar |
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APT15D100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 1.9V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 28ns Anzahl je Verpackung: 1 Stücke |
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APT15D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 2V |
Produkt ist nicht verfügbar |
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APT15D120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247AC Max. forward voltage: 2V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT15D120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 32ns |
auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
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APT15D120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 32ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 310 Stücke: Lieferzeit 7-14 Tag (e) |
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APT15D40BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 400V Type of diode: rectifying Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Technology: FRED Reverse recovery time: 19ns Max. forward voltage: 1.3V Load current: 15A |
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APT15D40BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 400V Type of diode: rectifying Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Technology: FRED Reverse recovery time: 19ns Max. forward voltage: 1.3V Load current: 15A |
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APT15D40KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns |
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APT15D40KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns Anzahl je Verpackung: 1 Stücke |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V |
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APT15D60BCAG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED Load current: 15A Semiconductor structure: common anode; double Reverse recovery time: 21ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Mounting: THT Case: TO247-3 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Anzahl je Verpackung: 1 Stücke |
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| APT15D60BCTG | MICROCHIP (MICROSEMI) |
APT15D60BCTG THT universal diodes |
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| APT15D60BG | MICROCHIP (MICROSEMI) |
APT15D60BG THT universal diodes |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns |
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APT15D60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns Anzahl je Verpackung: 1 Stücke |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying |
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APT15DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V Case: TO247AC Mounting: THT Features of semiconductor devices: ultrafast switching Technology: FRED Max. off-state voltage: 1kV Max. load current: 29A Max. forward voltage: 2.5V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 235ns Max. forward impulse current: 80A Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
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APT15DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED Case: TO247-2 Mounting: THT Application: automotive industry Features of semiconductor devices: fast switching Technology: FRED Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns Type of diode: rectifying |
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APT15DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED Case: TO247-2 Mounting: THT Application: automotive industry Features of semiconductor devices: fast switching Technology: FRED Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT15DQ100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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APT15DQ100KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1kV Max. forward voltage: 2.5V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 20ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT15DQ120BG | MICROCHIP (MICROSEMI) |
APT15DQ120BG THT universal diodes |
auf Bestellung 268 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT15DQ120BHBG | MICROCHIP (MICROSEMI) |
APT15DQ120BHBG THT universal diodes |
Produkt ist nicht verfügbar |
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APT15DQ120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2.8V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
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APT15DQ120KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2.8V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 21ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 131 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT15DQ60BCTG | MICROCHIP (MICROSEMI) |
APT15DQ60BCTG THT universal diodes |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT15DQ60BG | MICROCHIP (MICROSEMI) |
APT15DQ60BG THT universal diodes |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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APT15DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 15ns |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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APT15DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm Application: automotive industry Mounting: THT Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 15ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT14F100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT14F100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT14F100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
Produkt ist nicht verfügbar
| APT14F100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 56A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Pulsed drain current: 56A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT14M100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT14M100B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT14M100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT14M100S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT14M120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Produkt ist nicht verfügbar
| APT14M120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT14M120S |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Produkt ist nicht verfügbar
| APT14M120S |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT150GN120J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN120JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT150GN120JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN60B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Produkt ist nicht verfügbar
| APT150GN60B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT150GN60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN60JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT150GN60JDQ4 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GN60LDQ4G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Produkt ist nicht verfügbar
| APT150GN60LDQ4G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT150GT120JR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT150GT120JR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15D100BCTG THT universal diodes
APT15D100BCTG THT universal diodes
Produkt ist nicht verfügbar
| APT15D100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
| APT15D100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247AC; Ufmax: 1.9V; 28ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 15A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 1.9V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D100BHBG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15D100BHBG THT universal diodes
APT15D100BHBG THT universal diodes
Produkt ist nicht verfügbar
| APT15D100KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
Produkt ist nicht verfügbar
| APT15D100KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 1.9V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 1.9V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 28ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
Produkt ist nicht verfügbar
| APT15D120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO247AC; Ufmax: 2V; 32ns; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247AC
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D120KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 32ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 32ns
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 3.35 EUR |
| 23+ | 3.19 EUR |
| 24+ | 3.06 EUR |
| 25+ | 2.92 EUR |
| 100+ | 2.82 EUR |
| APT15D120KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 32ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 32ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 3.35 EUR |
| 23+ | 3.19 EUR |
| 24+ | 3.06 EUR |
| 25+ | 2.92 EUR |
| 100+ | 2.82 EUR |
| APT15D40BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Produkt ist nicht verfügbar
| APT15D40BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO247-3; Ufmax: 1.3V; 19ns; FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 400V
Type of diode: rectifying
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Technology: FRED
Reverse recovery time: 19ns
Max. forward voltage: 1.3V
Load current: 15A
Produkt ist nicht verfügbar
| APT15D40KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
| APT15D40KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; TO220-2; Ufmax: 1.3V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D60BCAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Produkt ist nicht verfügbar
| APT15D60BCAG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO247-3; Ufmax: 1.6V; 21ns; FRED
Load current: 15A
Semiconductor structure: common anode; double
Reverse recovery time: 21ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15D60BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15D60BCTG THT universal diodes
APT15D60BCTG THT universal diodes
Produkt ist nicht verfügbar
| APT15D60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15D60BG THT universal diodes
APT15D60BG THT universal diodes
Produkt ist nicht verfügbar
| APT15D60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Produkt ist nicht verfügbar
| APT15D60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 1.6V; 1.14÷1.4mm
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15DQ100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Produkt ist nicht verfügbar
| APT15DQ100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15Ax2; Ifsm: 80A; TO247AC; Ufmax: 2.5V
Case: TO247AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. load current: 29A
Max. forward voltage: 2.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 235ns
Max. forward impulse current: 80A
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15DQ100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
Produkt ist nicht verfügbar
| APT15DQ100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO247-2; Ufmax: 2.5V; 20ns; FRED
Case: TO247-2
Mounting: THT
Application: automotive industry
Features of semiconductor devices: fast switching
Technology: FRED
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT15DQ100KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.95 EUR |
| APT15DQ100KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 15A; TO220-2; Ufmax: 2.5V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1kV
Max. forward voltage: 2.5V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.95 EUR |
| 11+ | 6.51 EUR |
| 25+ | 3.95 EUR |
| APT15DQ120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DQ120BG THT universal diodes
APT15DQ120BG THT universal diodes
auf Bestellung 268 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.43 EUR |
| 24+ | 3.05 EUR |
| 25+ | 2.87 EUR |
| APT15DQ120BHBG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DQ120BHBG THT universal diodes
APT15DQ120BHBG THT universal diodes
Produkt ist nicht verfügbar
| APT15DQ120KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.8V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.8V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.42 EUR |
| 31+ | 2.35 EUR |
| 32+ | 2.25 EUR |
| 34+ | 2.12 EUR |
| 100+ | 2.04 EUR |
| APT15DQ120KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.8V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; TO220-2; Ufmax: 2.8V; 1.14÷1.4mm
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.8V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 21ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 131 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.42 EUR |
| 31+ | 2.35 EUR |
| 32+ | 2.25 EUR |
| 34+ | 2.12 EUR |
| 100+ | 2.04 EUR |
| APT15DQ60BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DQ60BCTG THT universal diodes
APT15DQ60BCTG THT universal diodes
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.42 EUR |
| 20+ | 3.63 EUR |
| 21+ | 3.43 EUR |
| APT15DQ60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT15DQ60BG THT universal diodes
APT15DQ60BG THT universal diodes
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.89 EUR |
| 23+ | 3.22 EUR |
| 24+ | 3.03 EUR |
| APT15DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.85 EUR |
| 27+ | 2.7 EUR |
| 32+ | 2.26 EUR |
| 34+ | 2.13 EUR |
| APT15DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; TO220-2; Ufmax: 2V; 1.14÷1.4mm
Application: automotive industry
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.85 EUR |
| 27+ | 2.7 EUR |
| 32+ | 2.26 EUR |
| 34+ | 2.13 EUR |
| 50+ | 2.06 EUR |