Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3995) > Seite 25 nach 67
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APT11N80BC3G | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced |
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APT11N80BC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 33A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 60nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R2BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced |
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APT1201R2BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 0.1µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R2BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced |
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APT1201R2BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 150nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
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APT1201R4BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced |
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APT1201R4BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT1201R4SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A |
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APT1201R4SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A Anzahl je Verpackung: 1 Stücke |
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APT1201R5BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Technology: POWER MOS 5® Mounting: THT Power dissipation: 370W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 285nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 1.5Ω |
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APT1201R5BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Technology: POWER MOS 5® Mounting: THT Power dissipation: 370W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 285nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 1.5Ω Anzahl je Verpackung: 1 Stücke |
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APT1201R5BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A |
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APT1201R5BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 On-state resistance: 1.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Gate charge: 28nC Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A Anzahl je Verpackung: 1 Stücke |
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APT1201R6BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Mounting: THT Gate charge: 230nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 32A Drain-source voltage: 1.2kV Drain current: 8A |
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APT1201R6BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Mounting: THT Gate charge: 230nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 32A Drain-source voltage: 1.2kV Drain current: 8A Anzahl je Verpackung: 1 Stücke |
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APT1201R6BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV |
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APT1201R6BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Case: TO247-3 Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
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APT1201R6SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Mounting: SMD Gate charge: 230nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 32A Drain-source voltage: 1.2kV Drain current: 8A |
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APT1201R6SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Mounting: SMD Gate charge: 230nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 32A Drain-source voltage: 1.2kV Drain current: 8A Anzahl je Verpackung: 1 Stücke |
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| APT12031JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 690W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.33Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT12031JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 690W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.33Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT12040JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.4Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT12040JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.4Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT12040L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Mounting: THT Gate charge: 275nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264MAX Pulsed drain current: 120A Drain-source voltage: 1.2kV Drain current: 30A |
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| APT12040L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Mounting: THT Gate charge: 275nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264MAX Pulsed drain current: 120A Drain-source voltage: 1.2kV Drain current: 30A Anzahl je Verpackung: 1 Stücke |
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APT1204R7BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Mounting: THT Gate charge: 31nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 14A Drain-source voltage: 1.2kV Drain current: 3.5A |
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APT1204R7BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Mounting: THT Gate charge: 31nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 14A Drain-source voltage: 1.2kV Drain current: 3.5A Anzahl je Verpackung: 1 Stücke |
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APT1204R7SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Mounting: SMD Gate charge: 31nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 14A Drain-source voltage: 1.2kV Drain current: 3.5A |
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APT1204R7SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Mounting: SMD Gate charge: 31nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 14A Drain-source voltage: 1.2kV Drain current: 3.5A Anzahl je Verpackung: 1 Stücke |
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| APT12057B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
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| APT12057B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| APT12057B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
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| APT12057B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Case: TO247MAX Power dissipation: 690W Polarisation: unipolar Gate charge: 290nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| APT12057JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 570mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT12057JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 570mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT12057LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264 Mounting: THT Case: TO264 Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
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APT12057LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264 Mounting: THT Case: TO264 Power dissipation: 690W Polarisation: unipolar Gate charge: 185nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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APT12060LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V |
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APT12060LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT12060LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V |
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APT12060LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W Technology: POWER MOS 5® Mounting: THT Case: TO264 Power dissipation: 625W Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 650nC Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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| APT12067JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Pulsed drain current: 68A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 670mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT12067JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Pulsed drain current: 68A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 670mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT12067LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 On-state resistance: 670mΩ Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Mounting: THT Gate charge: 150nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A |
Produkt ist nicht verfügbar |
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APT12067LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 On-state resistance: 670mΩ Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Mounting: THT Gate charge: 150nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT12080JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 60A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.8Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT12080JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 60A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.8Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT12080LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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APT12080LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W Technology: POWER MOS 5® Mounting: THT Power dissipation: 520W Case: TO264 Polarisation: unipolar Gate charge: 485nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT12M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Mounting: THT Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 45A Drain-source voltage: 800V Drain current: 8A |
Produkt ist nicht verfügbar |
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APT12M80B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Mounting: THT Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 45A Drain-source voltage: 800V Drain current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT13F120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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APT13F120B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT13F120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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APT13F120S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT13GP120BDQ1G | MICROCHIP (MICROSEMI) |
APT13GP120BDQ1G THT IGBT transistors |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT13GP120BG | MICROCHIP (MICROSEMI) |
APT13GP120BG THT IGBT transistors |
Produkt ist nicht verfügbar |
| APT11N80BC3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT11N80BC3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 33A; 156W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 33A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R2BFLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R2BFLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 48A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R2BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R2BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4BFLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R4BFLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT1201R4BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R4SFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Produkt ist nicht verfügbar
| APT1201R4SFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Mounting: SMD
Gate charge: 75nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 36A
Drain-source voltage: 1.2kV
Drain current: 9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R5BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Produkt ist nicht verfügbar
| APT1201R5BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R5BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Produkt ist nicht verfügbar
| APT1201R5BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Gate charge: 28nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: THT
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: THT
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Produkt ist nicht verfügbar
| APT1201R6BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: THT
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: THT
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
| APT1201R6BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Case: TO247-3
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1201R6SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: SMD
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: SMD
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Produkt ist nicht verfügbar
| APT1201R6SVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: SMD
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 8A; Idm: 32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Mounting: SMD
Gate charge: 230nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12031JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 690W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 690W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT12031JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 690W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; ISOTOP; screw; Idm: 120A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 690W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12040JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT12040JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 26A; ISOTOP; screw; 700W; screw
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12040L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Mounting: THT
Gate charge: 275nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264MAX
Pulsed drain current: 120A
Drain-source voltage: 1.2kV
Drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Mounting: THT
Gate charge: 275nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264MAX
Pulsed drain current: 120A
Drain-source voltage: 1.2kV
Drain current: 30A
Produkt ist nicht verfügbar
| APT12040L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Mounting: THT
Gate charge: 275nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264MAX
Pulsed drain current: 120A
Drain-source voltage: 1.2kV
Drain current: 30A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 120A; 893W
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Mounting: THT
Gate charge: 275nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264MAX
Pulsed drain current: 120A
Drain-source voltage: 1.2kV
Drain current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1204R7BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: THT
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: THT
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Produkt ist nicht verfügbar
| APT1204R7BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: THT
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: THT
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1204R7SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: SMD
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: SMD
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Produkt ist nicht verfügbar
| APT1204R7SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: SMD
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; D3PAK
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Mounting: SMD
Gate charge: 31nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: D3PAK
Pulsed drain current: 14A
Drain-source voltage: 1.2kV
Drain current: 3.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12057B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12057B2LLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Case: TO247MAX
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 290nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT12057JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 19A; ISOTOP; screw; Idm: 76A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12057LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12057LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO264
Mounting: THT
Case: TO264
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 185nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12060LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT12060LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; Idm: 80A
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12060LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT12060LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 20A; 625W
Technology: POWER MOS 5®
Mounting: THT
Case: TO264
Power dissipation: 625W
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 650nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12067JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 670mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 670mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT12067JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 670mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 17A; ISOTOP; screw; Idm: 68A; 463W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 670mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12067LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264
On-state resistance: 670mΩ
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Mounting: THT
Gate charge: 150nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264
On-state resistance: 670mΩ
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Mounting: THT
Gate charge: 150nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Produkt ist nicht verfügbar
| APT12067LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264
On-state resistance: 670mΩ
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Mounting: THT
Gate charge: 150nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264
On-state resistance: 670mΩ
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Mounting: THT
Gate charge: 150nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Pulsed drain current: 72A
Drain-source voltage: 1.2kV
Drain current: 18A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12080JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT12080JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; ISOTOP; screw; Idm: 60A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12080LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT12080LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 16A; 520W
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 520W
Case: TO264
Polarisation: unipolar
Gate charge: 485nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT12M80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Mounting: THT
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 45A
Drain-source voltage: 800V
Drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Mounting: THT
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 45A
Drain-source voltage: 800V
Drain current: 8A
Produkt ist nicht verfügbar
| APT12M80B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Mounting: THT
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 45A
Drain-source voltage: 800V
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 335W
Polarisation: unipolar
Mounting: THT
Gate charge: 80nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Pulsed drain current: 45A
Drain-source voltage: 800V
Drain current: 8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT13F120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT13F120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT13F120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT13F120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Technology: POWER MOS 8®
Pulsed drain current: 50A
Gate charge: 145nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT13GP120BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT13GP120BDQ1G THT IGBT transistors
APT13GP120BDQ1G THT IGBT transistors
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.59 EUR |
| 7+ | 10.81 EUR |
| 8+ | 10.21 EUR |
| APT13GP120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT13GP120BG THT IGBT transistors
APT13GP120BG THT IGBT transistors
Produkt ist nicht verfügbar