Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4005) > Seite 45 nach 67
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTC60TAM24TPG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| APTC60TAM24TPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 70A Case: SP6P Topology: MOSFET x3 half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC60TAM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| APTC60TAM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC60TDUM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||
| APTC60TDUM35PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC60VDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: SJ-MOSFET Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||
| APTC60VDAM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Technology: SJ-MOSFET Drain-source voltage: 600V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Case: SP3F Gate-source voltage: ±20V On-state resistance: 24mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
||
| APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80A10SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 32A On-state resistance: 0.1Ω Power dissipation: 416W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 168A Case: SP4 |
Produkt ist nicht verfügbar |
||
| APTC80A10SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 32A On-state resistance: 0.1Ω Power dissipation: 416W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 168A Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80A15SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 112A Case: SP4 |
Produkt ist nicht verfügbar |
||
| APTC80A15SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 112A Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80AM75SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 43A On-state resistance: 75mΩ Power dissipation: 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 232A Case: SP6C |
Produkt ist nicht verfügbar |
||
| APTC80AM75SCG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 43A On-state resistance: 75mΩ Power dissipation: 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 232A Case: SP6C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 110A Case: SP3 |
Produkt ist nicht verfügbar |
||
| APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 110A Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80H15T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A Case: SP1 |
Produkt ist nicht verfügbar |
||
| APTC80H15T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A Case: SP1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80H15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A Case: SP3 |
Produkt ist nicht verfügbar |
||
| APTC80H15T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80H29SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω Power dissipation: 156W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A Case: SP4 |
Produkt ist nicht verfügbar |
||
| APTC80H29SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω Power dissipation: 156W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80H29T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω Power dissipation: 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A Case: SP3 |
Produkt ist nicht verfügbar |
||
| APTC80H29T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 11A On-state resistance: 0.29Ω Power dissipation: 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A Case: SP3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80TA15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A Case: SP6P |
Produkt ist nicht verfügbar |
||
| APTC80TA15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A Case: SP6P Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTC80TDU15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A Case: SP6P |
Produkt ist nicht verfügbar |
||
| APTC80TDU15PG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 800V Drain current: 21A On-state resistance: 0.15Ω Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A Case: SP6P Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
Produkt ist nicht verfügbar |
||
| APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
Produkt ist nicht verfügbar |
||
| APTCV50H60T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
||
| APTCV50H60T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
||
| APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV60HM45BT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45BT3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APTCV60HM45RCT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45RCT3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APTCV60HM45RT3G | MICROCHIP (MICROSEMI) |
APTCV60HM45RT3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase |
Produkt ist nicht verfügbar |
||
| APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A |
Produkt ist nicht verfügbar |
||
| APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase |
Produkt ist nicht verfügbar |
||
| APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV60TLM99T3G | MICROCHIP (MICROSEMI) |
APTCV60TLM99T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
| APTDF100H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2.7V |
Produkt ist nicht verfügbar |
||
| APTDF100H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2.7V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTDF100H20G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 200V Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 1.4V |
Produkt ist nicht verfügbar |
||
| APTDF100H20G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Max. forward impulse current: 0.5kA Version: module Technology: FRED Mechanical mounting: screw Max. off-state voltage: 200V Electrical mounting: FASTON connectors Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 1.4V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTDF100H601G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm |
Produkt ist nicht verfügbar |
||
| APTDF100H601G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTDF200H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Kind of package: bulk Max. forward voltage: 2.7V Version: module Technology: FRED Mechanical mounting: screw Leads: M5 screws Max. off-state voltage: 1kV Electrical mounting: screw Load current: 200A Case: SP6 Type of bridge rectifier: single-phase Max. forward impulse current: 1.5kA |
Produkt ist nicht verfügbar |
||
| APTDF200H100G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Kind of package: bulk Max. forward voltage: 2.7V Version: module Technology: FRED Mechanical mounting: screw Leads: M5 screws Max. off-state voltage: 1kV Electrical mounting: screw Load current: 200A Case: SP6 Type of bridge rectifier: single-phase Max. forward impulse current: 1.5kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTDF200H120G | MICROCHIP (MICROSEMI) |
APTDF200H120G Sing. ph. diode bridge rectif. - others |
Produkt ist nicht verfügbar |
||
| APTDF200H170G | MICROCHIP (MICROSEMI) |
APTDF200H170G Sing. ph. diode bridge rectif. - others |
Produkt ist nicht verfügbar |
||
| APTDF200H60G | MICROCHIP (MICROSEMI) |
APTDF200H60G Sing. ph. diode bridge rectif. - others |
Produkt ist nicht verfügbar |
||
| APTDF30H1201G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED |
Produkt ist nicht verfügbar |
||
| APTDF30H1201G | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTDF30H601G | MICROCHIP (MICROSEMI) |
APTDF30H601G Sing. ph. diode bridge rectif. - others |
Produkt ist nicht verfügbar |
| APTC60TAM24TPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTC60TAM24TPG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP6P; Press-in PCB; 462W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP6P
Topology: MOSFET x3 half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC60TAM35PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTC60TAM35PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC60TDUM35PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APTC60TDUM35PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC60VDAM24T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APTC60VDAM24T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Technology: SJ-MOSFET
Drain-source voltage: 600V
Drain current: 70A
Pulsed drain current: 260A
Power dissipation: 462W
Case: SP3F
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC60VDAM45T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APTC60VDAM45T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80A10SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
Case: SP4
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
Case: SP4
Produkt ist nicht verfügbar
| APTC80A10SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.1Ω
Power dissipation: 416W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80A15SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
Case: SP4
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
Case: SP4
Produkt ist nicht verfügbar
| APTC80A15SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80AM75SCG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
Case: SP6C
Produkt ist nicht verfügbar
| APTC80AM75SCG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Power dissipation: 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
Case: SP6C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80DDA15T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Produkt ist nicht verfügbar
| APTC80DDA15T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80H15T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP1
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP1
Produkt ist nicht verfügbar
| APTC80H15T1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP1
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80H15T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Produkt ist nicht verfügbar
| APTC80H15T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80H29SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
Produkt ist nicht verfügbar
| APTC80H29SCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80H29T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP3
Produkt ist nicht verfügbar
| APTC80H29T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 11A
On-state resistance: 0.29Ω
Power dissipation: 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
Case: SP3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80TA15PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Produkt ist nicht verfügbar
| APTC80TA15PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTC80TDU15PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Produkt ist nicht verfügbar
| APTC80TDU15PG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 800V
Drain current: 21A
On-state resistance: 0.15Ω
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV40H60CT1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Produkt ist nicht verfügbar
| APTCV40H60CT1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Produkt ist nicht verfügbar
| APTCV50H60T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
| APTCV50H60T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV60HM45BC20T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
| APTCV60HM45BC20T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV60HM45BT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45BT3G Transistor modules MOSFET
APTCV60HM45BT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTCV60HM45RCT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45RCT3G Transistor modules MOSFET
APTCV60HM45RCT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTCV60HM45RT3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45RT3G Transistor modules MOSFET
APTCV60HM45RT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTCV60TLM24T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
Produkt ist nicht verfügbar
| APTCV60TLM24T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Pulsed drain current: 260A
Power dissipation: 462W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 70A
Drain-source voltage: 600V
Electrical mounting: Press-in PCB
Gate-source voltage: ±20V
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3F
On-state resistance: 24mΩ
Collector current: 75A
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV60TLM45T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Produkt ist nicht verfügbar
| APTCV60TLM45T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV60TLM70T3G |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Produkt ist nicht verfügbar
| APTCV60TLM70T3G |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTCV60TLM99T3G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTCV60TLM99T3G Transistor modules MOSFET
APTCV60TLM99T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
| APTDF100H100G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
Produkt ist nicht verfügbar
| APTDF100H100G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2.7V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTDF100H20G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 200V
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 1.4V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 200V
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 1.4V
Produkt ist nicht verfügbar
| APTDF100H20G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 200V
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 1.4V
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Max. forward impulse current: 0.5kA
Version: module
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 200V
Electrical mounting: FASTON connectors
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 1.4V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTDF100H601G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Produkt ist nicht verfügbar
| APTDF100H601G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTDF200H100G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
Produkt ist nicht verfügbar
| APTDF200H100G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Kind of package: bulk
Max. forward voltage: 2.7V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: M5 screws
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 200A
Case: SP6
Type of bridge rectifier: single-phase
Max. forward impulse current: 1.5kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTDF200H120G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTDF200H120G Sing. ph. diode bridge rectif. - others
APTDF200H120G Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
| APTDF200H170G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTDF200H170G Sing. ph. diode bridge rectif. - others
APTDF200H170G Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
| APTDF200H60G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTDF200H60G Sing. ph. diode bridge rectif. - others
APTDF200H60G Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
| APTDF30H1201G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Produkt ist nicht verfügbar
| APTDF30H1201G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APTDF30H601G |
|
Hersteller: MICROCHIP (MICROSEMI)
APTDF30H601G Sing. ph. diode bridge rectif. - others
APTDF30H601G Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar