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FIX-TP2,5-18
Produktcode: 101058 		Fix&Fasten fix-tp-datasheet.pdf Verstärkungs- und Metallstangen > Abstandshalter
Внутрішня різьба: M2,5
Опис: Стійка опорна, монтажна, шестигранна з внутрішньою/зовнішньою різьбою М2.5/М2.5, h = 18мм пластикова
Відстань між платами (висота): 18 мм
Зовнішня різьба: M2,5
Матеріал: Поліамід
auf Bestellung 10 Stück:
Lieferzeit 21-28 Tag (e)
1+0.16 EUR
FIX-TP2,5-25 Abstandshalter mit Gewinde; Sechseck; Polyamid; M2,5
Produktcode: 92188 		Fix&Fasten fix-tp-datasheet.pdf Verstärkungs- und Metallstangen > Abstandshalter
Внутрішня різьба: Abstandshalter
Опис: Abstandshalter mit Gewinde; Sechseck; Polyamid; M2,5
Відстань між платами (висота): 25 мм
Зовнішня різьба: M2,5
Матеріал: Поліамід
auf Bestellung 100 Stück:
Lieferzeit 21-28 Tag (e)
1+0.2 EUR
IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 2ns
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.17 EUR
12+ 6.21 EUR
13+ 5.86 EUR
250+ 5.63 EUR
Mindestbestellmenge: 9
IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 2ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 340 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.17 EUR
12+ 6.21 EUR
13+ 5.86 EUR
250+ 5.63 EUR
Mindestbestellmenge: 9
IXTP01N100D IXTP01N100D Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
50+ 8.67 EUR
100+ 7.76 EUR
Mindestbestellmenge: 2
IXTP01N100D IXTP01N100D LITTELFUSE 2944666.pdf Description: LITTELFUSE - IXTP01N100D - MOSFET, N-CH, 1KV, 0.4A, TO-220
tariffCode: 85412900
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 50ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP02N120P IXTP02N120P IXYS media-3319913.pdf MOSFETs 500V to 1200V Polar Power MOSFET
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.33 EUR
10+ 3.5 EUR
100+ 2.85 EUR
250+ 2.75 EUR
500+ 2.43 EUR
1000+ 2.04 EUR
IXTP02N120P IXTP02N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_02n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
auf Bestellung 10606 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
50+ 3.38 EUR
100+ 2.78 EUR
500+ 2.35 EUR
1000+ 2 EUR
2000+ 1.9 EUR
5000+ 1.83 EUR
Mindestbestellmenge: 5
IXTP02N120P IXTP02N120P Littelfuse media.pdf Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(3+Tab) TO-220
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
53+2.88 EUR
55+ 2.68 EUR
100+ 2.49 EUR
250+ 2.32 EUR
500+ 2.17 EUR
1000+ 2.03 EUR
Mindestbestellmenge: 53
IXTP02N120P IXTP02N120P LITTELFUSE IXYS-S-A0008595721-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: LITTELFUSE - IXTP02N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 200 mA, 75 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe Polar
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 75ohm
SVHC: To Be Advised
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP02N120P IXTP02N120P Littelfuse media.pdf Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(3+Tab) TO-220
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.04 EUR
58+ 2.55 EUR
Mindestbestellmenge: 50
IXTP06N120P IXTP06N120P IXYS media-3323014.pdf MOSFETs 0.6 Amps 1200V 32 Rds
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.83 EUR
10+ 6.58 EUR
50+ 4.44 EUR
500+ 4.35 EUR
1000+ 3.89 EUR
IXTP08N100P IXTP08N100P IXYS IXTA(P,Y)08N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.94 EUR
9+ 7.95 EUR
25+ 2.86 EUR
250+ 1.73 EUR
Mindestbestellmenge: 8
IXTP08N100P IXTP08N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 1753 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.03 EUR
50+ 2.51 EUR
100+ 2.27 EUR
500+ 1.84 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 4
IXTP08N120P IXTP08N120P IXYS media-3320029.pdf MOSFETs 0.8 Amps 1200V 25 Rds
auf Bestellung 3353 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+ 6.09 EUR
50+ 5.17 EUR
100+ 4.44 EUR
250+ 4.28 EUR
500+ 4.05 EUR
1000+ 3.71 EUR
IXTP08N50D2 IXTP08N50D2 LITTELFUSE LFSI-S-A0007909383-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: LITTELFUSE - IXTP08N50D2 - MOSFET, N-CH, 500V, 0.8A, TO-220
tariffCode: 0
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.6ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.46 EUR
33+ 2.22 EUR
36+ 1.99 EUR
250+ 1.63 EUR
Mindestbestellmenge: 30
IXTP100N04T2 IXTP100N04T2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_100n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
50+ 3.38 EUR
100+ 2.78 EUR
500+ 2.35 EUR
1000+ 2 EUR
Mindestbestellmenge: 5
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.74Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
17+ 4.2 EUR
Mindestbestellmenge: 6
IXTP10N60P IXTP10N60P IXYS media-3319784.pdf MOSFETs 10.0 Amps 600 V 0.74 Ohm Rds
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.27 EUR
10+ 5.51 EUR
50+ 4.66 EUR
100+ 4.28 EUR
250+ 4.1 EUR
500+ 3.84 EUR
1000+ 3.45 EUR
IXTP10P15T IXTP10P15T IXYS IXT_10P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.32 EUR
25+ 2.92 EUR
28+ 2.65 EUR
29+ 2.49 EUR
50+ 2.46 EUR
Mindestbestellmenge: 22
IXTP10P50P IXTP10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.46 EUR
14+ 5.32 EUR
15+ 5.03 EUR
Mindestbestellmenge: 10
IXTP10P50P IXTP10P50P IXYS media-3319144.pdf MOSFETs -10.0 Amps -500V 1.000 Rds
auf Bestellung 1910 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.17 EUR
10+ 9.13 EUR
50+ 7.8 EUR
100+ 7.23 EUR
250+ 7.09 EUR
500+ 6.97 EUR
IXTP10P50P IXTP10P50P Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.17 EUR
50+ 8.13 EUR
100+ 7.27 EUR
500+ 6.42 EUR
1000+ 5.78 EUR
Mindestbestellmenge: 2
IXTP10P50P IXTP10P50P IXYS SEMICONDUCTOR LFSI-S-A0007910737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: IXYS SEMICONDUCTOR - IXTP10P50P - Leistungs-MOSFET, p-Kanal, 500 V, 10 A, 1 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP10P50P IXTP10P50P Littelfuse media.pdf Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
17+8.95 EUR
Mindestbestellmenge: 17
IXTP10P50P IXTP10P50P Ixys Corporation media.pdf Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.64 EUR
100+ 7.65 EUR
Mindestbestellmenge: 50
IXTP10P50P IXTP10P50P Littelfuse media.pdf Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
27+5.74 EUR
Mindestbestellmenge: 27
IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
30+ 2.45 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 27
IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.72 EUR
30+ 2.45 EUR
37+ 1.94 EUR
39+ 1.84 EUR
250+ 1.8 EUR
Mindestbestellmenge: 27
IXTP120N20X4 IXTP120N20X4 IXYS media-3320559.pdf MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.38 EUR
50+ 7.48 EUR
100+ 7.3 EUR
IXTP120N20X4 Littelfuse Inc. media?resourcetype=datasheets&itemid=4d42ec72-ac77-486d-9671-5dee26ed0a6f&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
auf Bestellung 639 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.06 EUR
50+ 7.23 EUR
100+ 6.7 EUR
Mindestbestellmenge: 2
IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.04 EUR
15+ 5.02 EUR
16+ 4.75 EUR
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IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.04 EUR
15+ 5.02 EUR
16+ 4.75 EUR
500+ 4.56 EUR
Mindestbestellmenge: 11
IXTP120P065T IXTP120P065T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf Description: MOSFET P-CH 65V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 275 Stücke:
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2+9.61 EUR
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IXTP120P065T IXTP120P065T IXYS media-3319649.pdf MOSFETs -120 Amps -65V 0.01 Rds
auf Bestellung 555 Stücke:
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1+9.94 EUR
10+ 8.84 EUR
50+ 7.09 EUR
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250+ 6.46 EUR
500+ 6.12 EUR
IXTP120P065T IXTP120P065T IXYS SEMICONDUCTOR LFSI-S-A0007925045-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: IXYS SEMICONDUCTOR - IXTP120P065T - Leistungs-MOSFET, p-Kanal, 65 V, 120 A, 0.01 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 65V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+ 23.84 EUR
7+ 10.21 EUR
17+ 4.2 EUR
250+ 2.57 EUR
IXTP12N50PM IXYS/Littelfuse littelfuse_discrete_mosfets_n-channel_standard_ixtp12n50pm_datasheet.pdf.pdf N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
2+5.67 EUR
10+ 4.89 EUR
100+ 4.3 EUR
Mindestbestellmenge: 2
IXTP12N70X2 IXTP12N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_12n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.13 EUR
16+ 4.62 EUR
20+ 3.68 EUR
21+ 3.47 EUR
Mindestbestellmenge: 14
IXTP12N70X2M IXTP12N70X2M IXYS media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
IXTP12N70X2M IXTP12N70X2M IXYS media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
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13+ 5.51 EUR
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IXTP130N10T IXTP130N10T IXYS IXTA(P)130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
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9+7.95 EUR
17+ 4.2 EUR
Mindestbestellmenge: 9
IXTP130N10T IXTP130N10T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_1of2_datasheet.pdf.pdf Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 204 Stücke:
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IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
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10+7.71 EUR
13+ 5.52 EUR
14+ 5.22 EUR
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IXTP140N12T2 IXTP140N12T2 IXYS media-3320606.pdf MOSFETs TO220 120V 140A N-CH TRENCH
auf Bestellung 315 Stücke:
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1+10.24 EUR
10+ 8.61 EUR
50+ 8.1 EUR
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500+ 6.67 EUR
IXTP140P05T IXTP140P05T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_140p05t_datasheet.pdf.pdf Description: MOSFET P-CH 50V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 8829 Stücke:
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2+11.88 EUR
50+ 9.49 EUR
100+ 8.49 EUR
500+ 7.49 EUR
1000+ 6.74 EUR
2000+ 6.32 EUR
Mindestbestellmenge: 2
IXTP140P05T IXTP140P05T IXYS media-3321333.pdf MOSFETs -140 Amps -50V 0.008 Rds
auf Bestellung 1728 Stücke:
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1+12.3 EUR
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100+ 8.31 EUR
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500+ 7.8 EUR
IXTP140P05T IXTP140P05T IXYS SEMICONDUCTOR LFSI-S-A0007924996-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: IXYS SEMICONDUCTOR - IXTP140P05T - Leistungs-MOSFET, p-Kanal, 50 V, 140 A, 0.009 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 140A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.009ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP14N60P IXTP14N60P IXYS media-3320168.pdf MOSFETs 14.0 Amps 600 V 0.55 Ohm Rds
auf Bestellung 300 Stücke:
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1+5.32 EUR
50+ 4 EUR
100+ 3.96 EUR
IXTP14N60P IXTP14N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_14n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 477 Stücke:
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100+ 4.27 EUR
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IXTP14N60X2 IXTP14N60X2 IXYS IXTP14N60X2_DS_1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
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19+ 3.78 EUR
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IXTP14N60X2 IXTP14N60X2 Littelfuse Inc. IXTP14N60X2_DS_1.pdf Description: MOSFET N-CH 600V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 327 Stücke:
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IXTP14N60X2 IXTP14N60X2 IXYS SEMICONDUCTOR LFSI-S-A0011027194-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: IXYS SEMICONDUCTOR - IXTP14N60X2 - Leistungs-MOSFET, n-Kanal, 600 V, 14 A, 0.25 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 180W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.25ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
auf Bestellung 87 Stücke:
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8+9.11 EUR
10+ 7.28 EUR
11+ 6.88 EUR
50+ 6.75 EUR
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IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
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8+9.11 EUR
10+ 7.28 EUR
11+ 6.88 EUR
50+ 6.75 EUR
Mindestbestellmenge: 8
IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.58 EUR
9+ 8.09 EUR
10+ 7.65 EUR
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IXTP15N50L2 IXTP15N50L2 IXYS media-3323447.pdf MOSFETs LINEAR L2 SERIES MOSFET 500V 15A
auf Bestellung 1022 Stücke:
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1+16 EUR
10+ 15.17 EUR
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100+ 11.4 EUR
250+ 11.05 EUR
500+ 10.07 EUR
1000+ 9.33 EUR
IXTP15N50L2 IXTP15N50L2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixt_15n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.45 EUR
50+ 12.33 EUR
100+ 11.03 EUR
500+ 9.74 EUR
Mindestbestellmenge: 2
FIX-TP2,5-18
Produktcode: 101058		 fix-tp-datasheet.pdf
Hersteller: Fix&Fasten
Verstärkungs- und Metallstangen > Abstandshalter
Внутрішня різьба: M2,5
Опис: Стійка опорна, монтажна, шестигранна з внутрішньою/зовнішньою різьбою М2.5/М2.5, h = 18мм пластикова
Відстань між платами (висота): 18 мм
Зовнішня різьба: M2,5
Матеріал: Поліамід
auf Bestellung 10 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+0.16 EUR
FIX-TP2,5-25 Abstandshalter mit Gewinde; Sechseck; Polyamid; M2,5
Produktcode: 92188		 fix-tp-datasheet.pdf
Hersteller: Fix&Fasten
Verstärkungs- und Metallstangen > Abstandshalter
Внутрішня різьба: Abstandshalter
Опис: Abstandshalter mit Gewinde; Sechseck; Polyamid; M2,5
Відстань між платами (висота): 25 мм
Зовнішня різьба: M2,5
Матеріал: Поліамід
auf Bestellung 100 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+0.2 EUR
IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 2ns
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+8.17 EUR
12+ 6.21 EUR
13+ 5.86 EUR
250+ 5.63 EUR
Mindestbestellmenge: 9
IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 2ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 340 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.17 EUR
12+ 6.21 EUR
13+ 5.86 EUR
250+ 5.63 EUR
Mindestbestellmenge: 9
IXTP01N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTP01N100D
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.86 EUR
50+ 8.67 EUR
100+ 7.76 EUR
Mindestbestellmenge: 2
IXTP01N100D 2944666.pdf
IXTP01N100D
Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTP01N100D - MOSFET, N-CH, 1KV, 0.4A, TO-220
tariffCode: 85412900
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 50ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP02N120P media-3319913.pdf
IXTP02N120P
Hersteller: IXYS
MOSFETs 500V to 1200V Polar Power MOSFET
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.33 EUR
10+ 3.5 EUR
100+ 2.85 EUR
250+ 2.75 EUR
500+ 2.43 EUR
1000+ 2.04 EUR
IXTP02N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_02n120p_datasheet.pdf.pdf
IXTP02N120P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
auf Bestellung 10606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.21 EUR
50+ 3.38 EUR
100+ 2.78 EUR
500+ 2.35 EUR
1000+ 2 EUR
2000+ 1.9 EUR
5000+ 1.83 EUR
Mindestbestellmenge: 5
IXTP02N120P media.pdf
IXTP02N120P
Hersteller: Littelfuse
Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(3+Tab) TO-220
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+2.88 EUR
55+ 2.68 EUR
100+ 2.49 EUR
250+ 2.32 EUR
500+ 2.17 EUR
1000+ 2.03 EUR
Mindestbestellmenge: 53
IXTP02N120P IXYS-S-A0008595721-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP02N120P
Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTP02N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 200 mA, 75 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe Polar
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 75ohm
SVHC: To Be Advised
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP02N120P media.pdf
IXTP02N120P
Hersteller: Littelfuse
Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(3+Tab) TO-220
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+3.04 EUR
58+ 2.55 EUR
Mindestbestellmenge: 50
IXTP06N120P media-3323014.pdf
IXTP06N120P
Hersteller: IXYS
MOSFETs 0.6 Amps 1200V 32 Rds
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.83 EUR
10+ 6.58 EUR
50+ 4.44 EUR
500+ 4.35 EUR
1000+ 3.89 EUR
IXTP08N100P IXTA(P,Y)08N100P.pdf
IXTP08N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+8.94 EUR
9+ 7.95 EUR
25+ 2.86 EUR
250+ 1.73 EUR
Mindestbestellmenge: 8
IXTP08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTP08N100P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 1753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.03 EUR
50+ 2.51 EUR
100+ 2.27 EUR
500+ 1.84 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 4
IXTP08N120P media-3320029.pdf
IXTP08N120P
Hersteller: IXYS
MOSFETs 0.8 Amps 1200V 25 Rds
auf Bestellung 3353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.53 EUR
10+ 6.09 EUR
50+ 5.17 EUR
100+ 4.44 EUR
250+ 4.28 EUR
500+ 4.05 EUR
1000+ 3.71 EUR
IXTP08N50D2 LFSI-S-A0007909383-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP08N50D2
Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTP08N50D2 - MOSFET, N-CH, 500V, 0.8A, TO-220
tariffCode: 0
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.6ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.46 EUR
33+ 2.22 EUR
36+ 1.99 EUR
250+ 1.63 EUR
Mindestbestellmenge: 30
IXTP100N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_100n04t2_datasheet.pdf.pdf
IXTP100N04T2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.21 EUR
50+ 3.38 EUR
100+ 2.78 EUR
500+ 2.35 EUR
1000+ 2 EUR
Mindestbestellmenge: 5
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.74Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
17+ 4.2 EUR
Mindestbestellmenge: 6
IXTP10N60P media-3319784.pdf
IXTP10N60P
Hersteller: IXYS
MOSFETs 10.0 Amps 600 V 0.74 Ohm Rds
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.27 EUR
10+ 5.51 EUR
50+ 4.66 EUR
100+ 4.28 EUR
250+ 4.1 EUR
500+ 3.84 EUR
1000+ 3.45 EUR
IXTP10P15T IXT_10P15T.pdf
IXTP10P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.32 EUR
25+ 2.92 EUR
28+ 2.65 EUR
29+ 2.49 EUR
50+ 2.46 EUR
Mindestbestellmenge: 22
IXTP10P50P IXT_10P50P.pdf
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.46 EUR
14+ 5.32 EUR
15+ 5.03 EUR
Mindestbestellmenge: 10
IXTP10P50P media-3319144.pdf
IXTP10P50P
Hersteller: IXYS
MOSFETs -10.0 Amps -500V 1.000 Rds
auf Bestellung 1910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.17 EUR
10+ 9.13 EUR
50+ 7.8 EUR
100+ 7.23 EUR
250+ 7.09 EUR
500+ 6.97 EUR
IXTP10P50P littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf
IXTP10P50P
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.17 EUR
50+ 8.13 EUR
100+ 7.27 EUR
500+ 6.42 EUR
1000+ 5.78 EUR
Mindestbestellmenge: 2
IXTP10P50P LFSI-S-A0007910737-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP10P50P
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTP10P50P - Leistungs-MOSFET, p-Kanal, 500 V, 10 A, 1 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP10P50P media.pdf
IXTP10P50P
Hersteller: Littelfuse
Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+8.95 EUR
Mindestbestellmenge: 17
IXTP10P50P media.pdf
IXTP10P50P
Hersteller: Ixys Corporation
Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+8.64 EUR
100+ 7.65 EUR
Mindestbestellmenge: 50
IXTP10P50P media.pdf
IXTP10P50P
Hersteller: Littelfuse
Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+5.74 EUR
Mindestbestellmenge: 27
IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.72 EUR
30+ 2.45 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 27
IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.72 EUR
30+ 2.45 EUR
37+ 1.94 EUR
39+ 1.84 EUR
250+ 1.8 EUR
Mindestbestellmenge: 27
IXTP120N20X4 media-3320559.pdf
IXTP120N20X4
Hersteller: IXYS
MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.38 EUR
50+ 7.48 EUR
100+ 7.3 EUR
IXTP120N20X4 media?resourcetype=datasheets&itemid=4d42ec72-ac77-486d-9671-5dee26ed0a6f&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet
Hersteller: Littelfuse Inc.
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
auf Bestellung 639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.06 EUR
50+ 7.23 EUR
100+ 6.7 EUR
Mindestbestellmenge: 2
IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+7.04 EUR
15+ 5.02 EUR
16+ 4.75 EUR
Mindestbestellmenge: 11
IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.04 EUR
15+ 5.02 EUR
16+ 4.75 EUR
500+ 4.56 EUR
Mindestbestellmenge: 11
IXTP120P065T littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf
IXTP120P065T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 65V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.61 EUR
50+ 7.68 EUR
100+ 6.87 EUR
Mindestbestellmenge: 2
IXTP120P065T media-3319649.pdf
IXTP120P065T
Hersteller: IXYS
MOSFETs -120 Amps -65V 0.01 Rds
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.94 EUR
10+ 8.84 EUR
50+ 7.09 EUR
100+ 6.56 EUR
250+ 6.46 EUR
500+ 6.12 EUR
IXTP120P065T LFSI-S-A0007925045-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP120P065T
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTP120P065T - Leistungs-MOSFET, p-Kanal, 65 V, 120 A, 0.01 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 65V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
3+ 23.84 EUR
7+ 10.21 EUR
17+ 4.2 EUR
250+ 2.57 EUR
IXTP12N50PM littelfuse_discrete_mosfets_n-channel_standard_ixtp12n50pm_datasheet.pdf.pdf
Hersteller: IXYS/Littelfuse
N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+5.67 EUR
10+ 4.89 EUR
100+ 4.3 EUR
Mindestbestellmenge: 2
IXTP12N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_12n70x2_datasheet.pdf.pdf
IXTP12N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.13 EUR
16+ 4.62 EUR
20+ 3.68 EUR
21+ 3.47 EUR
Mindestbestellmenge: 14
IXTP12N70X2M media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
Mindestbestellmenge: 9
IXTP12N70X2M media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf
IXTP12N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
13+ 5.51 EUR
Mindestbestellmenge: 9
IXTP130N10T IXTA(P)130N10T.pdf
IXTP130N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
17+ 4.2 EUR
Mindestbestellmenge: 9
IXTP130N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_1of2_datasheet.pdf.pdf
IXTP130N10T
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.81 EUR
50+ 4.59 EUR
100+ 3.94 EUR
Mindestbestellmenge: 4
IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.71 EUR
13+ 5.52 EUR
14+ 5.22 EUR
Mindestbestellmenge: 10
IXTP140N12T2 media-3320606.pdf
IXTP140N12T2
Hersteller: IXYS
MOSFETs TO220 120V 140A N-CH TRENCH
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.24 EUR
10+ 8.61 EUR
50+ 8.1 EUR
100+ 6.9 EUR
250+ 6.72 EUR
500+ 6.67 EUR
IXTP140P05T littelfuse_discrete_mosfets_p-channel_ixt_140p05t_datasheet.pdf.pdf
IXTP140P05T
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 50V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 8829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.88 EUR
50+ 9.49 EUR
100+ 8.49 EUR
500+ 7.49 EUR
1000+ 6.74 EUR
2000+ 6.32 EUR
Mindestbestellmenge: 2
IXTP140P05T media-3321333.pdf
IXTP140P05T
Hersteller: IXYS
MOSFETs -140 Amps -50V 0.008 Rds
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+12.3 EUR
10+ 10.77 EUR
50+ 8.99 EUR
100+ 8.31 EUR
250+ 8.13 EUR
500+ 7.8 EUR
IXTP140P05T LFSI-S-A0007924996-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP140P05T
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTP140P05T - Leistungs-MOSFET, p-Kanal, 50 V, 140 A, 0.009 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 50V
rohsCompliant: YES
Dauer-Drainstrom Id: 140A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.009ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP14N60P media-3320168.pdf
IXTP14N60P
Hersteller: IXYS
MOSFETs 14.0 Amps 600 V 0.55 Ohm Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.32 EUR
50+ 4 EUR
100+ 3.96 EUR
IXTP14N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_14n60p_datasheet.pdf.pdf
IXTP14N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.91 EUR
50+ 4.68 EUR
100+ 4.27 EUR
Mindestbestellmenge: 2
IXTP14N60X2 IXTP14N60X2_DS_1.pdf
IXTP14N60X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.56 EUR
15+ 5.02 EUR
18+ 3.99 EUR
19+ 3.78 EUR
Mindestbestellmenge: 13
IXTP14N60X2 IXTP14N60X2_DS_1.pdf
IXTP14N60X2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.5 EUR
50+ 6.74 EUR
100+ 5.78 EUR
Mindestbestellmenge: 3
IXTP14N60X2 LFSI-S-A0011027194-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IXTP14N60X2
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTP14N60X2 - Leistungs-MOSFET, n-Kanal, 600 V, 14 A, 0.25 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 180W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.25ohm
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+9.11 EUR
10+ 7.28 EUR
11+ 6.88 EUR
50+ 6.75 EUR
Mindestbestellmenge: 8
IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.11 EUR
10+ 7.28 EUR
11+ 6.88 EUR
50+ 6.75 EUR
Mindestbestellmenge: 8
IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+11.58 EUR
9+ 8.09 EUR
10+ 7.65 EUR
Mindestbestellmenge: 7
IXTP15N50L2 media-3323447.pdf
IXTP15N50L2
Hersteller: IXYS
MOSFETs LINEAR L2 SERIES MOSFET 500V 15A
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16 EUR
10+ 15.17 EUR
50+ 12.51 EUR
100+ 11.4 EUR
250+ 11.05 EUR
500+ 10.07 EUR
1000+ 9.33 EUR
IXTP15N50L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_15n50_datasheet.pdf.pdf
IXTP15N50L2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.45 EUR
50+ 12.33 EUR
100+ 11.03 EUR
500+ 9.74 EUR
Mindestbestellmenge: 2
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