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STFHCA-VTI823TSTFHCA
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFHEM250087AEssentraMounting Hardware
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFHEM250087BEssentraMounting Hardware
Produkt ist nicht verfügbar
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STFHEM720380AEssentraMounting Hardware
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFHEM720380BEssentraMounting Hardware
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFHLA12.000CDIP-6
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI10LN80K5STMicroelectronicsDescription: MOSFET N-CH 800V 8A I2PAKFP
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAKFP (TO-281)
Vgs(th) (Max) @ Id: 5V @ 100µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI10N62K3STMicroelectronicsDescription: MOSFET N CH 620V 8.4A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.3 EUR
50+3.25 EUR
100+3.09 EUR
500+2.76 EUR
1000+2.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI10N62K3STMicroelectronicsMOSFETs N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.52 EUR
10+3.83 EUR
100+3.47 EUR
500+2.84 EUR
1000+2.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STFI10N65K3STMicroelectronicsMOSFETs N-Ch 650 V 0.75 Ohm 10 A Zener-protect
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI10N65K3STMicroelectronicsDescription: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI10NK60ZSTMicroelectronicsDescription: MOSFET N-CH 600V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI11N60M2-EPSTMicroelectronicsDescription: MOSFET N-CH 600V I2PAK-FP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI11N60M2-EPSTMicroelectronicsMOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI11N65M2STMicroelectronicsMOSFETs POWER MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.19 EUR
10+3.36 EUR
100+2.31 EUR
500+1.87 EUR
1000+1.74 EUR
1500+1.67 EUR
4500+1.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STFI11N65M2STMicroelectronicsDescription: MOSFET N-CH 650V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI11NM65NSTMicroelectronicsDescription: MOSFET N CH 650V 11A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAKFP (TO-281)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI12N60M2STMicroelectronicsMOSFETs N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.69 EUR
10+1.82 EUR
100+1.63 EUR
500+1.4 EUR
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STFI12N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 9A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI130N10F3STMicroelectronicsDescription: MOSFET N-CH 100V 46A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI130N10F3STMicroelectronicsMOSFET N-Ch 100 V 8 mOhm 46 A STripFET
Produkt ist nicht verfügbar
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STFI13N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N60M2STMicroelectronicsMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N65M2STMicroelectronicsDescription: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N65M2STMicroelectronicsMOSFETs N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.78 EUR
10+3.22 EUR
100+2.34 EUR
500+1.95 EUR
1000+1.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N95K3STMicroelectronicsDescription: MOSFET N CH 950V 10A I2PAKFP
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI13NK60ZSTMicroelectronicsDescription: MOSFET N-CH 600V 13A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI13NM60NSTMicroelectronicsDescription: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI13NM60NSTMicroelectronicsMOSFET N-Ch 600V 0.28 Ohm 11A MDmesh II
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI14N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI15N60M2-EPSTMicroelectronicsMOSFETs
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.82 EUR
10+3.8 EUR
100+2.62 EUR
500+2.18 EUR
1000+2.01 EUR
1500+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STFI15N60M2-EPSTMicroelectronicsDescription: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI15N65M5STMicroelectronicsDescription: MOSFET N CH 650V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI15N95K5STMicroelectronicsDescription: MOSFET N-CH 950V 7.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.62 EUR
10+5.56 EUR
100+4.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STFI15N95K5STMicroelectronicsMOSFET POWER MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI15NM65NSTMicroelectronicsDescription: MOSFET N-CH 650V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI16N65M2STMicroelectronicsDescription: MOSFET N-CH 650V I2PAK-FP
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI18N65M2STMicroelectronicsDescription: MOSFET N-CH 650V I2PAK-FP
Produkt ist nicht verfügbar
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STFI20N65M5STMicroelectronicsMOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
auf Bestellung 1405 Stücke:
Lieferzeit 10-14 Tag (e)
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STFI20N65M5STMicroelectronicsDescription: MOSFET N CH 650V 18A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
Produkt ist nicht verfügbar
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STFI20NK50ZSTMicroelectronicsDescription: MOSFET N-CH 500V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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STFI20NM65NSTMicroelectronicsDescription: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Produkt ist nicht verfügbar
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STFI210N75F6STMicroelectronicsSTMicroelectronics N-channel 75 V, 3 mOhm typ., 120 A STripFET(TM) VI, POWER MOSFET
Produkt ist nicht verfügbar
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STFI24N60M2STMicroelectronics
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
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STFI24N60M2STMicroelectronicsMOSFETs N-Ch 600 V 0.168 Ohm 18 A MDmesh M2
auf Bestellung 1383 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+4.25 EUR
100+3 EUR
500+2.51 EUR
1000+2.32 EUR
1500+2.18 EUR
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STFI24N60M2STMicroelectronicsDescription: MOSFET N CH 600V 18A TO281
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Produkt ist nicht verfügbar
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STFI24NM60NSTMicroelectronicsDescription: MOSFET N-CH 600V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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STFI260N6F6STMicroelectronicsMOSFET N-channel 60 V 00024 ASTripFET Pwr MOSFET
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)
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STFI260N6F6STMicroelectronicsDescription: MOSFET N-CH 60V 80A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAKFP (TO-281)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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STFI26N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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STFI26N60M2STMicroelectronicsMOSFETs N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.39 EUR
10+7.25 EUR
25+3.71 EUR
100+3.28 EUR
250+3.27 EUR
500+3.06 EUR
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STFI26NM60NSTMicroelectronicsDescription: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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STFI28N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 22A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
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STFI31N65M5STMicroelectronicsDescription: MOSFET N CH 650V 22A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
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STFI34N65M5STMicroelectronicsDescription: MOSFET N CH 650V 28A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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STFI34NM60NSTMicroelectronicsDescription: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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STFI40N60M2STMicroelectronicsMOSFETs N-channel 600 V 0078 typ 34 A Pwr MOSFET
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.93 EUR
10+12.26 EUR
100+10.09 EUR
500+9.01 EUR
1000+8.4 EUR
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STFI40N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 34A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Produkt ist nicht verfügbar
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STFI4N62K3STMicroelectronicsDescription: MOSFET N CH 620V 3.8A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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STFI4N62K3STMicroelectronics
auf Bestellung 31 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STFI5N95K3STMicroelectronicsDescription: MOSFET N-CH 950V 4A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.05 EUR
10+4.19 EUR
100+3.33 EUR
500+2.82 EUR
Mindestbestellmenge: 5 Stücke
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STFI6N62K3STMicroelectronicsDescription: MOSFET N CH 620V 5.5A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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STFI6N65K3STMicroelectronicsDescription: MOSFET N-CH 650V 5.4A I2PAKFP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Produkt ist nicht verfügbar
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STFI6N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 4.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STFI7LN80K5STMicroelectronicsDescription: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STFI7LN80K5STMicroelectronicsMOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a I2PAKFP package
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
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STFI7N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
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STFI8N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Produkt ist nicht verfügbar
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STFI9N60M2STMicroelectronicsDescription: MOSFET N-CH 600V 5.5A I2PAKFP
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Produkt ist nicht verfügbar
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STFI9N60M2STMicroelectronicsMOSFET POWER MOSFET
Produkt ist nicht verfügbar
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STFI9N80K5STMicroelectronicsMOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a I2PAKFP package
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
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STFI9N80K5STMicroelectronicsDescription: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STFILED524STMicroelectronicsDescription: MOSFET N-CH 525V 4A I2PAKFP
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STFILED625STMicroelectronicsDescription: MOSFET N-CH 620V I2PAK-FP
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STFILED627STMicroelectronicsDescription: MOSFET N-CH 620V 7A I2PAK
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STFKBKC&KSwitch Fixings
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STFL033045AEssentraSpiral Wraps, Sleeves, Tubing & Conduit
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STFL042055AEssentra Access SolutionsDescription: STFL042055A
Packaging: Bulk
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STFL042055AEssentraSpiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE STAR TUBING:GREEN SILICONE
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STFL050062AEssentraSpiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE STAR TUBING:PURPLE SILICONE
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STFL062075AEssentraSpiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE STAR TUBING:RUST RED SILICONE
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STFL072087AEssentraSpiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE STAR TUBING:BLUE SILICONE
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STFL085100AEssentraSpiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE STAR TUBING:WHITE SILICONE
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STFM1000
auf Bestellung 4860 Stücke:
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STFM1000-FNX
auf Bestellung 4920 Stücke:
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STFM1000-TA2
auf Bestellung 1261 Stücke:
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STFM1000B2
auf Bestellung 4692 Stücke:
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STFM1000B2-FNXFREESCALE08+
auf Bestellung 35 Stücke:
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STFM1000B2FNX
auf Bestellung 1800 Stücke:
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STFM1000N32E-TA2
auf Bestellung 1710 Stücke:
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STFM1000N32E-TB2
auf Bestellung 16 Stücke:
Lieferzeit 21-28 Tag (e)
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STFM1000XXNAEB2XNXP (VIA ROCHESTER)Description: NXP (VIA ROCHESTER) - STFM1000XXNAEB2X - RF AMPLIFIER IC'S
tariffCode: 85423190
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: TBC
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 56350 Stücke:
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490+6.34 EUR
Mindestbestellmenge: 490 Stücke
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STFM360TIMEGUARDDescription: TIMEGUARD - STFM360 - PIR-Sensor, Decke, weiß, 360° Strahlöffnungswinkel, 8m Messbereich, 76.5mm x 82mm x 82mm
tariffCode: 85319000
Erfassungsreichweite, max.: 8m
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, min.: 230V
euEccn: NLR
Ansprechzeit: 3s
hazardous: false
rohsPhthalatesCompliant: YES
Versorgungsspannung, max.: -
usEccn: EAR99
Strahlöffnungswinkel: 360°
Produktpalette: -
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 4 Stücke:
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STFMMINITIMEGUARDDescription: TIMEGUARD - STFMMINI - PIR-Sensor, bündig, weiß, 360° Strahlöffnungswinkel, 8m Messbereich, 73mm x 50mm x 50mm
tariffCode: 85319000
Erfassungsreichweite, max.: 8m
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, min.: 230V
euEccn: NLR
Ansprechzeit: 3s
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Strahlöffnungswinkel: 360°
Produktpalette: -
SVHC: No SVHC (07-Jul-2017)
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STFN1000
auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
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STFN42STMicroelectronicsDescription: TRANS NPN 400V 1A SOT-89
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STFN42STMicroelectronicsBipolar Transistors - BJT High voltage fast-switching NPN power transistor
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STFN42STMicroelectronicsDescription: TRANS NPN 400V 1A SOT-89
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STFPC311STMicroelectronicsDescription: IC CTRLR/DRVR FRONT PANEL 52QFP
Current - Supply: 5 mA
Supplier Device Package: 52-PQFP (10x10)
Voltage - Supply: 3V ~ 33.3V
Operating Temperature: -40°C ~ 85°C
Interface: Serial
Mounting Type: Surface Mount
Display Type: Vacuum Fluorescent (VF)
Package / Case: 52-QFP
Packaging: Tray
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