Produkte > UT6
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| UT6H72393TTCH | Eaton Electrical | Power Meters & Energy Meters 6 POS, 200A, LEVER, 7T, HUB OPENINGS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6H72393UUHLCH | Eaton Electrical | Power Meters & Energy Meters MtrSkt,200A,Ringless,7-Jaw,OH/UG,6-Gang | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6J3TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 3A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6J3TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 3A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 2835 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6J3TCR | ROHM Semiconductor | MOSFETs -20V Pch+Pch Si MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6J3TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 3A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 1174 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6J3TCR1 | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 3A 8DFN Supplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6J3TCR1 | ROHM | Description: ROHM - UT6J3TCR1 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3 A, 3 A, 0.06 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.06ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4061 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6J3TCR1 | ROHM Semiconductor | MOSFETs DFN2020 2PCH 20V 3A | auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6J3TCR1 | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 3A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN2020-8D | auf Bestellung 2939 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6J3TCR1 | ROHM | Description: ROHM - UT6J3TCR1 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3 A, 3 A, 0.06 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.06ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4039 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JA2TCR | ROHM Semiconductor | MOSFETs -30V Pch+Pch Si MOSFET | auf Bestellung 5322 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JA2TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 30V 4A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JA2TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JA3TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JA3TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 20V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 1239 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JA3TCR | ROHM Semiconductor | MOSFETs UT6JA3 is a power MOSFET with low on-switching, suitable for switching. | auf Bestellung 3309 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JB5TCR | ROHM | Description: ROHM - UT6JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 3.5 A, 3.5 A, 0.095 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.095ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2113 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JB5TCR | ROHM Semiconductor | MOSFETs DFN2020 2PCH 40V 3.5A | auf Bestellung 1260 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JB5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 40V 3.5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 2814 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JB5TCR | ROHM | Description: ROHM - UT6JB5TCR - Dual-MOSFET, p-Kanal, 40 V, 40 V, 3.5 A, 3.5 A, 0.095 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.095ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2113 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JB5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 40V 3.5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JC5TCR | Rohm Semiconductor | Trans MOSFET P-CH 60V 2.5A 8-Pin HUML T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JC5TCR | ROHM | Description: ROHM - UT6JC5TCR - Dual-MOSFET, p-Kanal, 60 V, 60 V, 2.5 A, 2.5 A tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 2.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.28ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JC5TCR | Rohm Semiconductor | Trans MOSFET P-CH 60V 2.5A 8-Pin HUML T/R | auf Bestellung 2812 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JC5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 60V 2.5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JC5TCR | Rohm Semiconductor | Trans MOSFET P-CH 60V 2.5A 8-Pin HUML T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JC5TCR | ROHM | Description: ROHM - UT6JC5TCR - Dual-MOSFET, p-Kanal, 60 V, 60 V, 2.5 A, 2.5 A tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 2.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.28ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JC5TCR | ROHM Semiconductor | MOSFETs -60V Dual Pch+Pch, DFN2020, Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JC5TCR | Rohm Semiconductor | Trans MOSFET P-CH 60V 2.5A 8-Pin HUML T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6JC5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 60V 2.5A HUML2020L8 Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JC5TCR Transistor Produktcode: 214590
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UT6JE5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 100V 1A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6JE5TCR | ROHM Semiconductor | MOSFETs -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET | auf Bestellung 1665 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6JE5TCR | Rohm Semiconductor | Description: MOSFET 2P-CH 100V 1A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Configuration: 2 P-Channel (Dual) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6K30TCR | ROHM Semiconductor | MOSFETs 60V Nch+Nch Power MOSFET | auf Bestellung 3067 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K30TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3A HUML2020L8 Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.7V @ 50µA | auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K30TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3A HUML2020L8 Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6K30TCR1 | ROHM Semiconductor | MOSFETs UT6K30 is low on - resistance and small surface mount package MOSFET. It is suitable for switching application and DC-DC Converter. | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6K3TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5.5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K3TCR | ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | auf Bestellung 9225 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K3TCR | ROHM | Description: ROHM - UT6K3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5.5 A, 5.5 A, 0.03 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.5A Dauer-Drainstrom Id, p-Kanal: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.03ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.03ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2483 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6K3TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5.5A HUML2020L8 Drain to Source Voltage (Vdss): 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A | auf Bestellung 8385 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K3TCR | ROHM | Description: ROHM - UT6K3TCR - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5.5 A, 5.5 A, 0.03 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.03ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.03ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2483 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6K3TCR1 | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K3TCR1 | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5.5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6K3TCR1 | ROHM Semiconductor | MOSFETs DFN2020 2NCH 30V 5.5A | auf Bestellung 5749 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KB5TCR | ROHM | Description: ROHM - UT6KB5TCR - Dual-MOSFET, n-Kanal, 40 V, 40 V, 5 A, 5 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KB5TCR | ROHM Semiconductor | MOSFETs 40V 5A, Dual Nch+Nch, DFN2020-8D, Power MOSFET | auf Bestellung 3089 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KB5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 5A HUML2020L8 Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) | auf Bestellung 1132 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KB5TCR | ROHM | Description: ROHM - UT6KB5TCR - Dual-MOSFET, n-Kanal, 40 V, 40 V, 5 A, 5 A, 0.037 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 5A Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6KB5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 40V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3.5A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) Supplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6KC5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 3.5A 8DFN Supplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KC5TCR | ROHM Semiconductor | MOSFETs AECQ | auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | ROHM Semiconductor | MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET | auf Bestellung 14017 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Configuration: 2 N-Channel (Dual) | auf Bestellung 6596 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Fairchild/ON Semiconductor | Транзистор польовий N+P, Udss, В = 30, Id = 4 А, Qg, нКл = 4,3, 6,7, Rds = 46, 70 мОм, Ugs(th) = 2,5, Р, Вт = 2, Тексп, °C = макс. +150, Тип монт. = SMD,... Транзистори Корпус: PowerUDFN-6 Од. вим: шт Anzahl je Verpackung: 3000 Stücke | verfügbar 18 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA2TCR | ROHM Semiconductor | MOSFETs 30V Nch+Pch Middle Power MOSFET | auf Bestellung 8128 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | auf Bestellung 25548 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR Produktcode: 184866
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| IC > IC andere | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| UT6MA3 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 8481 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 20V 5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MA3TCR | ROHM Semiconductor | MOSFETs 20V Nch+Pch Si MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 20V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R | auf Bestellung 1293 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | ROHM | Description: ROHM - UT6MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 5 A, 3.5 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Description: MOSFET 40V 5A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 2640 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MB5TCR | ROHM | Description: ROHM - UT6MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 5 A, 3.5 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.095ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MB5TCR | Rohm Semiconductor | Description: MOSFET 40V 5A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UT6MC5TCR | ROHM | Description: ROHM - UT6MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3.5 A, 2.5 A, 0.073 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.22ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.073ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2512 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Description: MOSFET 60V 3.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MC5TCR | ROHM | Description: ROHM - UT6MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3.5 A, 2.5 A, 0.073 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.22ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.073ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2512 Stücke: Lieferzeit 14-21 Tag (e) |
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| UT6MC5TCR | Rohm Semiconductor | Description: MOSFET 60V 3.5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6ME5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) Power - Max: 2W (Ta) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6ME5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V | auf Bestellung 11979 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6ME5TCR | ROHM Semiconductor | MOSFETs DFN 100V 2A DUAL CH | auf Bestellung 13458 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6R2392TTGE | ABB | Electrical Enclosures HORIZ MTRG 6-200A 4-TRM 2-LRG HBOPN CTR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |