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EPC2102EPCDescription: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+8.54 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102EPCGaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102EPCDescription: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.39 EUR
10+12.67 EUR
100+10.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENGEPCDescription: TRANS GAN 2N-CH 60V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENGRTEPCDescription: MOSFET 2N-CH 60V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2102ENGRTEPCDescription: MOSFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103EPCDescription: MOSFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.13 EUR
1000+9.08 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103EPCDescription: MOSFET 2N-CH 80V 28A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 7834 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.65 EUR
10+14.27 EUR
100+11.11 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGEPCDescription: GAN TRANS 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRTEPCDescription: GANFET 2N-CH 80V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2103ENGRTEPCDescription: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104EPCDescription: MOSFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104EPCDescription: MOSFET 2N-CH 100V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.86 EUR
10+15.14 EUR
100+11.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGEPCDescription: TRANS GAN 2N-CH 100V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRTEPCDescription: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2104ENGRTEPCDescription: GANFET 2NCH 100V 23A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105EPCDescription: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.65 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105EPCDescription: MOSFET 2N-CH 80V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.75 EUR
10+14.3 EUR
100+10.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGEPCDescription: TRANS GAN 2N-CH 80V BUMPED DIE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRTEPCDescription: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2105ENGRTEPCDescription: GANFET 2NCH 80V 9.5A DIE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106EPCDescription: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
5000+1.46 EUR
7500+1.43 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106EPCDescription: MOSFET 2N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 69614 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.21 EUR
10+3.37 EUR
100+2.31 EUR
500+1.86 EUR
1000+1.74 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106EPCGaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.11 EUR
10+3.31 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.71 EUR
2500+1.52 EUR
5000+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106ENGRTEPCDescription: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2106ENGRTEPCDescription: GANFET 2N-CH 100V 1.7A DIE
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107EPCDescription: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
auf Bestellung 5068 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
10+3.38 EUR
100+2.33 EUR
500+1.92 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107EPCDescription: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.57 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRTEPCDescription: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRTEPCDescription: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2107ENGRTEPCDescription: TRANS GAN 3N-CH 100V BUMPED DIE
auf Bestellung 4617 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108EPCDescription: MOSFET 3N-CH 60V/100V 9BGA
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.63 EUR
10+2.99 EUR
100+2.05 EUR
500+1.64 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108EPCDescription: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRTEPCDescription: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRTEPCDescription: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2108ENGRTEPCDescription: TRANS GAN 3N-CH BUMPED DIE
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110EPCDescription: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 12120 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.18 EUR
10+4.02 EUR
100+2.78 EUR
500+2.26 EUR
1000+2.09 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2110EPCDescription: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.93 EUR
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EPC2110EPCGaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
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EPC2110ENGRTEPCDescription: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 11681 Stücke:
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EPC2110ENGRTEPCDescription: GAN TRANS 2N-CH 120V BUMPED DIE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 2500 Stücke
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EPC2111EPCDescription: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15523 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.35 EUR
10+5.52 EUR
100+3.9 EUR
500+3.2 EUR
1000+2.99 EUR
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EPC2111EPCDescription: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.73 EUR
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EPC2111ENGRTEPCDescription: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6776 Stücke:
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EPC2111ENGRTEPCDescription: GAN TRANS ASYMMETRICAL HALF BRID
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 1000 Stücke
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EPC2112ENGRTEPCDescription: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2115ENGRTEPCDescription: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2115ENGRTEPCDescription: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2121EPCDescription: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Cut Tape (CT)
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.83 EUR
10+2.45 EUR
25+2.08 EUR
100+1.67 EUR
250+1.48 EUR
500+1.34 EUR
1000+1.25 EUR
Mindestbestellmenge: 6 Stücke
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EPC2121EPCDescription: IC BIDIRECT SW 100V .045OHM 4BGA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2152EPCGate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
auf Bestellung 2379 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.65 EUR
10+13.8 EUR
25+12.27 EUR
100+10.56 EUR
250+9.82 EUR
500+9.72 EUR
1000+9.47 EUR
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EPC2152EPCDescription: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
500+10.31 EUR
1000+10.06 EUR
1500+9.94 EUR
Mindestbestellmenge: 500 Stücke
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EPC2152EPCDescription: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 7011 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.8 EUR
10+13.05 EUR
25+12.11 EUR
100+11.09 EUR
250+10.86 EUR
Mindestbestellmenge: 2 Stücke
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EPC2152ENGRTEPCDescription: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
500+9.34 EUR
Mindestbestellmenge: 500 Stücke
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EPC2152ENGRTEPCDescription: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 22977 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.11 EUR
10+13.7 EUR
25+12.02 EUR
100+10.13 EUR
250+9.34 EUR
Mindestbestellmenge: 2 Stücke
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EPC21601EPCDescription: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 9877 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.34 EUR
10+3.99 EUR
25+3.65 EUR
100+3.28 EUR
250+3.11 EUR
500+3.05 EUR
Mindestbestellmenge: 4 Stücke
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EPC21601EPCDescription: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.82 EUR
5000+2.76 EUR
Mindestbestellmenge: 2500 Stücke
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EPC21601ENGRTEPCDescription: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Cut Tape (CT)
auf Bestellung 4333 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.95 EUR
10+5.33 EUR
25+5.05 EUR
100+4.37 EUR
250+4.15 EUR
500+3.72 EUR
1000+3.14 EUR
Mindestbestellmenge: 4 Stücke
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EPC21601ENGRTEPCDescription: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.99 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21603EPCDescription: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7842 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
10+3.94 EUR
25+3.61 EUR
100+3.24 EUR
250+3.07 EUR
500+2.96 EUR
1000+2.87 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21603EPCDescription: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.53 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21603ENGRTEPCDescription: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.58 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21603ENGRTEPCDescription: IC LASER DRVR 40V 10A LVDS 6BMPD
Packaging: Cut Tape (CT)
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.75 EUR
10+5 EUR
25+4.28 EUR
100+3.47 EUR
250+3.07 EUR
500+2.83 EUR
1000+2.63 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21701EPCDescription: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.99 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC21701EPCDescription: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
auf Bestellung 35819 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.63 EUR
10+5.6 EUR
25+4.81 EUR
100+3.92 EUR
250+3.47 EUR
500+3.21 EUR
1000+2.99 EUR
Mindestbestellmenge: 3 Stücke
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EPC21702ENGRTEPCDescription: IC LASER DRVR GAN 80V 30A
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.27 EUR
10+7.44 EUR
25+7.03 EUR
100+6.09 EUR
250+5.78 EUR
500+5.19 EUR
1000+4.38 EUR
Mindestbestellmenge: 3 Stücke
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EPC21702ENGRTEPCDescription: IC LASER DRVR GAN 80V 30A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC21704ENGRTEPCDescription: IC LASER DRVR GAN 80V 75A
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC21704ENGRTEPCDescription: IC LASER DRVR GAN 80V 75A
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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EPC2202EPCDescription: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 34345 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+4.57 EUR
100+3.2 EUR
500+2.86 EUR
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EPC2202EPCDescription: GANFET N-CH 80V 18A DIE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): +5.75V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.33 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2203EPCDescription: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2203Efficient Power ConversionTrans MOSFET N-CH GaN 80V 1.7A Automotive AEC-Q101 4-Pin Die T/R
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
25000+0.64 EUR
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2203EPCDescription: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
Mindestbestellmenge: 8 Stücke
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EPC2203EPCGaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 2685 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.84 EUR
10+1.8 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.76 EUR
5000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2204EPCDescription: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 125000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.96 EUR
5000+1.86 EUR
Mindestbestellmenge: 2500 Stücke
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EPC2204EPCGaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 14783 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.81 EUR
10+3.8 EUR
100+2.64 EUR
500+2.24 EUR
1000+2.14 EUR
2500+1.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2204EPCN-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2204EPCDescription: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
auf Bestellung 127013 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.33 EUR
10+4.13 EUR
100+2.87 EUR
500+2.32 EUR
1000+2.27 EUR
Mindestbestellmenge: 4 Stücke
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EPC2204AEPCDescription: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.31 EUR
5000+2.23 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2204AEPCGaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.64 EUR
10+4.36 EUR
100+3.03 EUR
500+2.68 EUR
1000+2.57 EUR
2500+2.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2204AEPCDescription: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26557 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
10+4.75 EUR
100+3.32 EUR
500+2.73 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2206EPCDescription: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 389962 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.42 EUR
10+6.94 EUR
100+4.96 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2206EPCDescription: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
auf Bestellung 389500 Stücke:
Lieferzeit 10-14 Tag (e)
500+4.22 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2206Efficient Power ConversionTrans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
500+6.59 EUR
1000+5.57 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2207EPCDescription: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.94 EUR
5000+1.83 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2207EPCDescription: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 17644 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.28 EUR
10+4.08 EUR
100+2.83 EUR
500+2.3 EUR
1000+2.25 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2212EPCDescription: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 81004 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.72 EUR
10+5.07 EUR
100+3.56 EUR
500+2.98 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2212EPCDescription: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.49 EUR
5000+2.43 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214EPCDescription: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.44 EUR
5000+1.36 EUR
7500+1.31 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214EPCGaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
auf Bestellung 10860 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.82 EUR
10+3.09 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
2500+1.42 EUR
5000+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2214EPCDescription: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 108547 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.9 EUR
10+3.15 EUR
100+2.15 EUR
500+1.73 EUR
1000+1.61 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2215EPCGaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
auf Bestellung 10850 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.41 EUR
10+7.66 EUR
100+6.37 EUR
1000+6.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2215EPCDescription: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.21 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2215EPCDescription: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 49314 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.65 EUR
10+7.78 EUR
100+5.6 EUR
500+5.16 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2216EPCDescription: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 31656 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2216EPCDescription: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.01 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2216EPCGaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.86 EUR
10+2.48 EUR
100+1.67 EUR
500+1.32 EUR
1000+1.21 EUR
2500+1.09 EUR
5000+0.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218EPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218EPCDescription: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 16820 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.64 EUR
10+9.92 EUR
100+7.25 EUR
500+7.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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