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BSB 20 BLHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; blue; 3mΩ; 2.5mm2; screw type
Connector: plug
Type of connector: 4mm banana
Rated voltage: 33V AC; 60V DC
Current rating: 30A
Connector variant: non-insulated; with 4mm socket
Contact plating: nickel plated
Engineering PN: 930729102
Contact material: brass
Max cable section: 2.5mm2
Max. contact resistance:: 3mΩ
Mounting: screw type
Colour: blue
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.97 EUR
28+ 2.56 EUR
Mindestbestellmenge: 24
BSB 20 BLHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; blue; 3mΩ; 2.5mm2; screw type
Connector: plug
Type of connector: 4mm banana
Rated voltage: 33V AC; 60V DC
Current rating: 30A
Connector variant: non-insulated; with 4mm socket
Contact plating: nickel plated
Engineering PN: 930729102
Contact material: brass
Max cable section: 2.5mm2
Max. contact resistance:: 3mΩ
Mounting: screw type
Colour: blue
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.97 EUR
Mindestbestellmenge: 24
BSB 20 GEHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; yellow; 3mΩ; 2.5mm2; screw type
Connector: plug
Type of connector: 4mm banana
Rated voltage: 33V AC; 60V DC
Current rating: 30A
Connector variant: non-insulated; with 4mm socket
Contact plating: nickel plated
Engineering PN: 930729103
Contact material: brass
Max cable section: 2.5mm2
Max. contact resistance:: 3mΩ
Mounting: screw type
Colour: yellow
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSB 20 GEHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; yellow; 3mΩ; 2.5mm2; screw type
Connector: plug
Type of connector: 4mm banana
Rated voltage: 33V AC; 60V DC
Current rating: 30A
Connector variant: non-insulated; with 4mm socket
Contact plating: nickel plated
Engineering PN: 930729103
Contact material: brass
Max cable section: 2.5mm2
Max. contact resistance:: 3mΩ
Mounting: screw type
Colour: yellow
Produkt ist nicht verfügbar
BSB 20 K BLACKSKS KontakttechnikConn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port
Produkt ist nicht verfügbar
BSB 20 K BLUESKS KontakttechnikConn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port
Produkt ist nicht verfügbar
BSB 20 K GREENSKS KontakttechnikConn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port
Produkt ist nicht verfügbar
BSB 20 K REDSKS KontakttechnikConn Banana PL 1 POS Screw ST Cable Mount 1 Port
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
BSB 20 K RTHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; red; 3mΩ; 2.5mm2; nickel plated
Mounting: screw type
Engineering PN: 930729101
Contact material: brass
Max cable section: 2.5mm2
Connector variant: non-insulated; with 4mm socket
Colour: red
Type of connector: 4mm banana
Connector: plug
Contact plating: nickel plated
Rated voltage: 33V AC; 60V DC
Max. contact resistance:: 3mΩ
Current rating: 30A
Produkt ist nicht verfügbar
BSB 20 K RTHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; red; 3mΩ; 2.5mm2; nickel plated
Mounting: screw type
Engineering PN: 930729101
Contact material: brass
Max cable section: 2.5mm2
Connector variant: non-insulated; with 4mm socket
Colour: red
Type of connector: 4mm banana
Connector: plug
Contact plating: nickel plated
Rated voltage: 33V AC; 60V DC
Max. contact resistance:: 3mΩ
Current rating: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSB 20 K SWHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; black; 3mΩ; 2.5mm2; screw type
Mounting: screw type
Engineering PN: 930729100
Contact material: brass
Max cable section: 2.5mm2
Connector variant: non-insulated; with 4mm socket
Colour: black
Type of connector: 4mm banana
Connector: plug
Contact plating: nickel plated
Rated voltage: 33V AC; 60V DC
Max. contact resistance:: 3mΩ
Current rating: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
5+ 14.3 EUR
10+ 7.15 EUR
25+ 2.86 EUR
26+ 2.75 EUR
BSB 20 K SWHIRSCHMANN T&MCategory: 4mm Banana Plugs
Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; black; 3mΩ; 2.5mm2; screw type
Mounting: screw type
Engineering PN: 930729100
Contact material: brass
Max cable section: 2.5mm2
Connector variant: non-insulated; with 4mm socket
Colour: black
Type of connector: 4mm banana
Connector: plug
Contact plating: nickel plated
Rated voltage: 33V AC; 60V DC
Max. contact resistance:: 3mΩ
Current rating: 30A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
BSB 20 K YELLOWSKS KontakttechnikConn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port
Produkt ist nicht verfügbar
BSB 300 BLACKSKS KontakttechnikMULTIPLE-SPRING WIRE PLUG WITH COUPLI WAY, THE PLUGS CAN BE CONNECTED TOG TO MAXIMUM CABLE CROSS-SECTION OF 1
Produkt ist nicht verfügbar
BSB 300 BLAU / BLUESKS Kontakttechnik931294102
Produkt ist nicht verfügbar
BSB 300 GELB / YELLOWSKS Kontakttechnik931294103
Produkt ist nicht verfügbar
BSB 300 GRN / GREENSKS Kontakttechnik931294104
Produkt ist nicht verfügbar
BSB 300 REDSKS KontakttechnikMultiple-Spring Wire Plug With Coupling Located Parallel
Produkt ist nicht verfügbar
BSB-PIR90-UCarlo GavazziOptical Sensor Modules SMART-DUPLINE PL PIR DETECTOR 90 LIGHT REV.2
Produkt ist nicht verfügbar
BSB008NE2LXInfineon TechnologiesMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
auf Bestellung 118 Stücke:
Lieferzeit 14-28 Tag (e)
BSB008NE2LXInfineon technologies
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
BSB008NE2LXXTInfineon TechnologiesMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Produkt ist nicht verfügbar
BSB008NE2LXXUMA1Infineon TechnologiesTrans MOSFET N-CH 25V 46A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB008NE2LXXUMA1INFINEON TECHNOLOGIESBSB008NE2LXXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
BSB008NE2LXXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 46A/180A 2WDSON
auf Bestellung 123 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.96 EUR
100+ 4.79 EUR
Mindestbestellmenge: 4
BSB008NE2LXXUMA1Infineon TechnologiesMOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Produkt ist nicht verfügbar
BSB008NE2LXXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 46A/180A 2WDSON
Produkt ist nicht verfügbar
BSB012N03LX3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3581 Stücke:
Lieferzeit 21-28 Tag (e)
335+2.22 EUR
Mindestbestellmenge: 335
BSB012N03LX3 GInfineon TechnologiesMOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3
Produkt ist nicht verfügbar
BSB012N03LX3 GInfineon TechnologiesDescription: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
BSB012N03LX3GInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
auf Bestellung 5508 Stücke:
Lieferzeit 21-28 Tag (e)
278+2.59 EUR
Mindestbestellmenge: 278
BSB012N03LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 30V 39A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB012N03LX3GXUMA1Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4398 Stücke:
Lieferzeit 21-28 Tag (e)
278+2.59 EUR
Mindestbestellmenge: 278
BSB012N03MX3 GInfineon TechnologiesMOSFET N-KANAL POWER MOS
Produkt ist nicht verfügbar
BSB012N03MX3GXTInfineon TechnologiesMOSFET OptiMOS 3 PWR-MOSFET DUAL SIDE COOLING
Produkt ist nicht verfügbar
BSB012NE2LXInfineon TechnologiesDescription: MOSFET N-CH 25V 37A/170A 2WDSON
Produkt ist nicht verfügbar
BSB012NE2LXInfineon TechnologiesDescription: MOSFET N-CH 25V 37A/170A 2WDSON
Produkt ist nicht verfügbar
BSB012NE2LXIInfineon TechnologiesMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Produkt ist nicht verfügbar
BSB012NE2LXIXUMA1Infineon TechnologiesTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB012NE2LXIXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Mounting: SMD
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ M; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB012NE2LXIXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Mounting: SMD
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ M; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BSB012NE2LXIXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 170A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5852 pF @ 12 V
Produkt ist nicht verfügbar
BSB012NE2LXIXUMA1Infineon TechnologiesMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
auf Bestellung 1156 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.6 EUR
10+ 5.95 EUR
100+ 4.78 EUR
500+ 3.93 EUR
Mindestbestellmenge: 8
BSB013NE2LXIInfineon TechnologiesMOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
auf Bestellung 455 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.2 EUR
100+ 4.19 EUR
500+ 3.43 EUR
Mindestbestellmenge: 10
BSB013NE2LXIInfineon technologies
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
BSB013NE2LXIXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB013NE2LXIXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Produkt ist nicht verfügbar
BSB013NE2LXIXUMA1INFINEONDescription: INFINEON - BSB013NE2LXIXUMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 163 A, 0.0011 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 163A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 57W
Bauform - Transistor: WDSON
Anzahl der Pins: 2Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
auf Bestellung 4754 Stücke:
Lieferzeit 14-21 Tag (e)
BSB013NE2LXIXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
auf Bestellung 18032 Stücke:
Lieferzeit 21-28 Tag (e)
315+2.28 EUR
Mindestbestellmenge: 315
BSB013NE2LXIXUMA1INFINEONDescription: INFINEON - BSB013NE2LXIXUMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 163 A, 0.0011 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 163A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 57W
Bauform - Transistor: WDSON
Anzahl der Pins: 2Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
auf Bestellung 4754 Stücke:
Lieferzeit 14-21 Tag (e)
BSB013NE2LXIXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BSB013NE2LXIXUMA1Infineon TechnologiesDescription: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Produkt ist nicht verfügbar
BSB014N04LX3 GInfineon TechnologiesMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
auf Bestellung 1113 Stücke:
Lieferzeit 14-28 Tag (e)
BSB014N04LX3GInfineon technologies
auf Bestellung 99 Stücke:
Lieferzeit 21-28 Tag (e)
BSB014N04LX3GXUMA1Infineon TechnologiesDescription: BSB014N04 - TRENCH <= 40V
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1
Produktcode: 168892		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1Infineon TechnologiesMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
auf Bestellung 3269 Stücke:
Lieferzeit 14-28 Tag (e)
BSB014N04LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 40V 36A 7-Pin WDSON T/R
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)
61+2.59 EUR
63+ 2.41 EUR
73+ 2.01 EUR
100+ 1.72 EUR
250+ 1.45 EUR
500+ 1.3 EUR
Mindestbestellmenge: 61
BSB01503HA3-00CGEDelta ElectronicsBlowers & Centrifugal Fans Blower, 15x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor, Tach
auf Bestellung 97 Stücke:
Lieferzeit 14-28 Tag (e)
2+42.61 EUR
10+ 41.6 EUR
25+ 37.78 EUR
50+ 35.44 EUR
100+ 35.1 EUR
195+ 32.79 EUR
585+ 31.2 EUR
Mindestbestellmenge: 2
BSB01503HA3-00CGEDelta ElectronicsDescription: FAN BLOWER 15X3.5MM 3VDC RECT
Packaging: Box
Features: Locked Rotor Protection, Speed Sensor (Tach)
Voltage - Rated: 3VDC
Size / Dimension: Square - 15mm L x 15mm H
Bearing Type: Sleeve
RPM: 13800 RPM
Air Flow: 0.170 CFM (0.005m³/min)
Width: 3.50mm
Weight: 0.003 lb (1.36 g)
Operating Temperature: 14 ~ 140°F (-10 ~ 60°C)
Termination: 3 Position Rectangular Connector
Fan Type: Blower
Noise: 30.0dB(A)
Static Pressure: 0.154 in H2O (38.4 Pa)
Part Status: Active
Power (Watts): 150 mW
auf Bestellung 3355 Stücke:
Lieferzeit 21-28 Tag (e)
1+50.49 EUR
10+ 48.21 EUR
25+ 43.61 EUR
50+ 40.17 EUR
195+ 36.04 EUR
390+ 33.28 EUR
585+ 30.99 EUR
BSB015N04NX3 GInfineon TechnologiesMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1Infineon TechnologiesMOSFET TRENCH <= 40V
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1Infineon TechnologiesBSB015N04NX3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 35A 7-Pin WDSON T/R - Arrow.com
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
63+2.49 EUR
65+ 2.32 EUR
67+ 2.19 EUR
100+ 1.94 EUR
250+ 1.82 EUR
500+ 1.7 EUR
1000+ 1.57 EUR
Mindestbestellmenge: 63
BSB015N04NX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1Infineon TechnologiesBSB015N04NX3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 35A 7-Pin WDSON T/R - Arrow.com
Produkt ist nicht verfügbar
BSB015N04NX3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
BSB01703HA3-00CAJDelta ElectronicsDescription: FAN BLOWER 17X3.4MM 3VDC RECT
Packaging: Box
Features: Locked Rotor Protection, Speed Sensor (Tach)
Voltage - Rated: 3VDC
Size / Dimension: Square - 17mm L x 17mm H
Bearing Type: Sleeve
RPM: 12000 RPM
Air Flow: 0.230 CFM (0.006m³/min)
Width: 3.40mm
Weight: 0.003 lb (1.36 g)
Operating Temperature: 14 ~ 140°F (-10 ~ 60°C)
Termination: 3 Position Rectangular Connector
Fan Type: Blower
Noise: 26.5dB(A)
Static Pressure: 0.182 in H2O (45.3 Pa)
Power (Watts): 180 mW
auf Bestellung 136 Stücke:
Lieferzeit 21-28 Tag (e)
1+50.49 EUR
10+ 48.21 EUR
25+ 43.61 EUR
50+ 40.17 EUR
100+ 36.04 EUR
BSB01703HA3-00CAJDelta ElectronicsBlowers & Centrifugal Fans Blower, 17x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor
auf Bestellung 586 Stücke:
Lieferzeit 14-28 Tag (e)
2+35.83 EUR
10+ 35.75 EUR
25+ 33.93 EUR
50+ 32.24 EUR
100+ 31.95 EUR
250+ 28.5 EUR
500+ 28.37 EUR
Mindestbestellmenge: 2
BSB01703HA3-00CAJDelta ElectronicsDC Fan Axial Sleeve Bearing 3V 2V to 3.5V 0.23CFM 26.5dB 17 X 17 X 3.4mm
Produkt ist nicht verfügbar
BSB017N03LX309+/10+
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
BSB017N03LX3
Produktcode: 118806		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
BSB017N03LX3 GInfineon TechnologiesDescription: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
Produkt ist nicht verfügbar
BSB017N03LX3 GInfineon TechnologiesMOSFET N-Ch 30V 147A CanPAK3 MX OptiMOS 3
Produkt ist nicht verfügbar
BSB017N03LX3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 30V 32A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB019N03LX GInfineon TechnologiesDescription: MOSFET N-CH 30V 32A/174A 2WDSON
Produkt ist nicht verfügbar
BSB0203HA3-00CERDelta ElectronicsBlowers & Centrifugal Fans Blower, 20x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor, Tach
auf Bestellung 873 Stücke:
Lieferzeit 14-28 Tag (e)
2+43 EUR
10+ 41.99 EUR
25+ 38.12 EUR
50+ 35.75 EUR
100+ 33.15 EUR
250+ 31.25 EUR
352+ 30.06 EUR
Mindestbestellmenge: 2
BSB0203HA3-00CERDelta ElectronicsDescription: FAN BLOWER 20X3.28MM 3VDC RECT
Packaging: Box
Features: Locked Rotor Protection, Speed Sensor (Tach)
Voltage - Rated: 3VDC
Size / Dimension: Square - 20mm L x 20mm H
Bearing Type: Sleeve
RPM: 13000 RPM
Air Flow: 0.280 CFM (0.008m³/min)
Width: 3.28mm
Weight: 0.003 lb (1.36 g)
Operating Temperature: 14 ~ 140°F (-10 ~ 60°C)
Termination: 3 Position Rectangular Connector
Fan Type: Blower
Noise: 32.0dB(A)
Static Pressure: 0.252 in H2O (62.8 Pa)
Part Status: Active
Power (Watts): 180 mW
auf Bestellung 2439 Stücke:
Lieferzeit 21-28 Tag (e)
1+50.49 EUR
10+ 48.21 EUR
25+ 43.61 EUR
50+ 40.17 EUR
100+ 36.04 EUR
250+ 33.28 EUR
500+ 30.99 EUR
BSB0205HP-00EFGDelta ElectronicsBSB0205HP-00EFG
auf Bestellung 570 Stücke:
Lieferzeit 14-21 Tag (e)
6+26.3 EUR
10+ 24.22 EUR
25+ 21.29 EUR
50+ 18.94 EUR
100+ 16.43 EUR
250+ 14.57 EUR
500+ 12.97 EUR
Mindestbestellmenge: 6
BSB0205HP-00EFGDelta ElectronicsDC Fans Tubeaxial Fan, 20x5mm, 5VDC, Sleeve, 4-Lead Wires, Lock Rotor Sensor, Tach, PWM
auf Bestellung 924 Stücke:
Lieferzeit 14-28 Tag (e)
2+50.6 EUR
10+ 48.31 EUR
25+ 43.71 EUR
50+ 40.25 EUR
100+ 36.11 EUR
250+ 33.36 EUR
352+ 31.2 EUR
Mindestbestellmenge: 2
BSB0205HP-00EFGDelta ElectronicsDescription: FAN AXIAL 17X5.28MM 5VDC WIRE
Packaging: Box
Features: Locked Rotor Protection, PWM Control, Speed Sensor (Tach)
Voltage - Rated: 5VDC
Size / Dimension: Square - 17mm L x 17mm H
Bearing Type: Sleeve
RPM: 12000 RPM
Air Flow: 0.570 CFM (0.016m³/min)
Width: 5.28mm
Weight: 0.004 lb (1.81 g)
Operating Temperature: 14 ~ 140°F (-10 ~ 60°C)
Termination: 4 Wire Leads
Approval Agency: cURus, TUV
Fan Type: Tubeaxial
Noise: 35.9dB(A)
Static Pressure: 0.400 in H2O (99.6 Pa)
Part Status: Active
Power (Watts): 400 mW
auf Bestellung 1996 Stücke:
Lieferzeit 21-28 Tag (e)
1+50.49 EUR
10+ 48.21 EUR
25+ 43.61 EUR
50+ 40.17 EUR
100+ 36.04 EUR
352+ 33.28 EUR
704+ 30.99 EUR
BSB0205HP-00EFGDelta Electronics Inc.DC Fan Axial Sleeve Bearing 5V 2V to 5.5V 0.57CFM 35.9dB 20 X 20 X 5.28mm PWM/Tachometer
Produkt ist nicht verfügbar
BSB024N03LX GInfineon TechnologiesDescription: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
Produkt ist nicht verfügbar
BSB028N06NN3 GInfineon TechnologiesMOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
auf Bestellung 3100 Stücke:
Lieferzeit 14-28 Tag (e)
9+5.8 EUR
11+ 4.94 EUR
100+ 4.13 EUR
250+ 4.03 EUR
500+ 3.46 EUR
1000+ 3.04 EUR
5000+ 2.99 EUR
Mindestbestellmenge: 9
BSB028N06NN3GInfineon technologies
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
BSB028N06NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 60V 22A/90A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 102µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+2.91 EUR
Mindestbestellmenge: 5000
BSB028N06NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB028N06NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB028N06NN3GXUMA1INFINEONDescription: INFINEON - BSB028N06NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 90 A, 0.0028 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 2Pin(s)
Produktpalette: OptiMOS 3 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
BSB028N06NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB028N06NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 60V 22A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 102µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 15013 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.58 EUR
100+ 4.44 EUR
500+ 3.76 EUR
1000+ 3.19 EUR
2000+ 3.03 EUR
Mindestbestellmenge: 4
BSB028N06NN3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
Produkt ist nicht verfügbar
BSB028N06NN3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB028N06NN3GXUMA1INFINEONDescription: INFINEON - BSB028N06NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 90 A, 0.0028 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 2Pin(s)
Produktpalette: OptiMOS 3 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
BSB028N06NN3GXUMA2Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 102µA
Supplier Device Package: MG-WDSON-5-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
BSB044N08NN3 GInfineon TechnologiesMOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
auf Bestellung 1160 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.22 EUR
10+ 9.18 EUR
100+ 7.51 EUR
500+ 6.4 EUR
1000+ 5.8 EUR
5000+ 4.91 EUR
Mindestbestellmenge: 6
BSB044N08NN3GXUMA1INFINEONDescription: INFINEON - BSB044N08NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0037 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0037ohm
auf Bestellung 4870 Stücke:
Lieferzeit 14-21 Tag (e)
BSB044N08NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB044N08NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 80V 18A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
auf Bestellung 5715 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.45 EUR
10+ 7.09 EUR
100+ 5.74 EUR
500+ 5.1 EUR
1000+ 4.37 EUR
2000+ 4.11 EUR
Mindestbestellmenge: 4
BSB044N08NN3GXUMA1INFINEON TECHNOLOGIESBSB044N08NN3GXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
BSB044N08NN3GXUMA1Infineon TechnologiesMOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
auf Bestellung 2015 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.01 EUR
10+ 9 EUR
100+ 7.38 EUR
500+ 6.29 EUR
1000+ 5.62 EUR
2500+ 5.51 EUR
Mindestbestellmenge: 6
BSB044N08NN3GXUMA1INFINEONDescription: INFINEON - BSB044N08NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0037 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0037ohm
auf Bestellung 4870 Stücke:
Lieferzeit 14-21 Tag (e)
BSB044N08NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB044N08NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB044N08NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 80V 18A/90A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+3.94 EUR
Mindestbestellmenge: 5000
BSB053N03LP GInfineon TechnologiesDescription: MOSFET N-CH 30V 71A 2WDSON
Produkt ist nicht verfügbar
BSB053N03LPGInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
693+1.02 EUR
Mindestbestellmenge: 693
BSB056N10NN3 GInfineon TechnologiesMOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
auf Bestellung 10132 Stücke:
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7+7.57 EUR
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BSB056N10NN3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB056N10NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Produkt ist nicht verfügbar
BSB056N10NN3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSB056N10NN3GXUMA1INFINEONDescription: INFINEON - BSB056N10NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 83 A, 0.005 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 83A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.005ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
BSB056N10NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSB056N10NN3GXUMA1Infineon TechnologiesBSB056N10NN3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 9A Automotive 7-Pin WDSON T/R - Arrow.com
auf Bestellung 4713 Stücke:
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64+2.47 EUR
65+ 2.33 EUR
66+ 2.22 EUR
100+ 2.11 EUR
250+ 2.02 EUR
500+ 1.92 EUR
1000+ 1.82 EUR
3000+ 1.81 EUR
Mindestbestellmenge: 64
BSB056N10NN3GXUMA1
Produktcode: 125684		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
BSB056N10NN3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
auf Bestellung 5596 Stücke:
Lieferzeit 21-28 Tag (e)
3+9 EUR
10+ 7.57 EUR
100+ 6.12 EUR
500+ 5.44 EUR
1000+ 4.66 EUR
2000+ 4.39 EUR
Mindestbestellmenge: 3
BSB056N10NN3GXUMA1INFINEONDescription: INFINEON - BSB056N10NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 83 A, 0.005 ohm, WDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 83A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
euEccn: NLR
Verlustleistung: 78W
Bauform - Transistor: WDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.005ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
BSB056N10NN3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)
BSB056N10NN3GXUMA1Infineon TechnologiesBSB056N10NN3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 9A Automotive 7-Pin WDSON T/R - Arrow.com
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BSB056N10NN3GXUMA2Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-5-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Produkt ist nicht verfügbar
BSB056N10NN3GXUMA3Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-5-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Produkt ist nicht verfügbar
BSB104N08NP3GInfineon technologies
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
BSB104N08NP3GXUMA1Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Produkt ist nicht verfügbar
BSB104N08NP3GXUMA2Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Produkt ist nicht verfügbar
BSB104N08NP3GXUMA3Infineon TechnologiesTrans MOSFET N-CH 80V 13A 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB104N08NP3GXUMA3Infineon TechnologiesMOSFET TRENCH 40<-<100V
Produkt ist nicht verfügbar
BSB104N08NP3GXUMA3Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Produkt ist nicht verfügbar
BSB104N08NP3GXUSA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
On-state resistance: 10.4mΩ
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB104N08NP3GXUSA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 3564 Stücke:
Lieferzeit 14-28 Tag (e)
11+5.1 EUR
12+ 4.55 EUR
100+ 3.56 EUR
500+ 2.94 EUR
Mindestbestellmenge: 11
BSB104N08NP3GXUSA1Infineon TechnologiesDescription: MOSFET N-CH 80V 13A/50A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
Produkt ist nicht verfügbar
BSB104N08NP3GXUSA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
On-state resistance: 10.4mΩ
Produkt ist nicht verfügbar
BSB1270002TXC CorporationStandard Clock Oscillators 212.5MHz 3.3V 0C +70C
Produkt ist nicht verfügbar
BSB1270002TXC CORPORATIONDescription: OSC XO 212.5MHZ 3.3V SMD
auf Bestellung 13 Stücke:
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BSB1270003TXC CorporationStandard Clock Oscillators 212.5MHz 3.3V -5C +85C
Produkt ist nicht verfügbar
BSB1270003TXC CORPORATIONDescription: XTAL OSC XO 212.5000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -5°C ~ 85°C
Frequency Stability: ±100ppm
Voltage - Supply: 3.3V
Height - Seated (Max): 0.071" (1.80mm)
Frequency: 212.5 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
BSB14DBussmann / EatonCircuit Breaker Accessories SEL. HANDLE-BLACK
Produkt ist nicht verfügbar
BSB165N15NZ3 GInfineon TechnologiesDescription: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
Lieferzeit 21-28 Tag (e)
BSB165N15NZ3 GInfineon TechnologiesMOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
Produkt ist nicht verfügbar
BSB165N15NZ3 GInfineon TechnologiesDescription: MOSFET N-CH 150V 9A WDSON-2
auf Bestellung 9105 Stücke:
Lieferzeit 21-28 Tag (e)
BSB165N15NZ3GInfineon TechnologiesDescription: BSB165N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
auf Bestellung 4012 Stücke:
Lieferzeit 21-28 Tag (e)
156+4.55 EUR
Mindestbestellmenge: 156
BSB165N15NZ3GInfineon technologies
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
BSB165N15NZ3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
auf Bestellung 6048 Stücke:
Lieferzeit 21-28 Tag (e)
156+4.61 EUR
Mindestbestellmenge: 156
BSB165N15NZ3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA1Infineon TechnologiesMOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
auf Bestellung 1526 Stücke:
Lieferzeit 14-28 Tag (e)
6+8.81 EUR
10+ 7.41 EUR
25+ 7.1 EUR
100+ 5.98 EUR
500+ 5.33 EUR
1000+ 4.47 EUR
2500+ 4.21 EUR
Mindestbestellmenge: 6
BSB165N15NZ3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA2Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Produkt ist nicht verfügbar
BSB165N15NZ3GXUMA3Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Produkt ist nicht verfügbar
BSB20KRT
Produktcode: 98225		Steckverbinder, Reihenklemmen > Kleinleistungs Steckverbinder
Produkt ist nicht verfügbar
BSB20KSW
Produktcode: 98224		Steckverbinder, Reihenklemmen > Kleinleistungs Steckverbinder
Produkt ist nicht verfügbar
BSB280N15NZ3 G
Produktcode: 125682		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
BSB280N15NZ3 GInfineon TechnologiesMOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3
Produkt ist nicht verfügbar
BSB280N15NZ3GInfineon TechnologiesDescription: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1Infineon TechnologiesTrans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1Infineon TechnologiesMOSFET TRENCH >=100V
Produkt ist nicht verfügbar
BSB280N15NZ3GXUMA1Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
BSB75-48S05FLTmodule
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
BSB881N03LX3GXUMA1Rochester Electronics, LLCDescription: N-CHANNEL POWER MOSFET
auf Bestellung 260000 Stücke:
Lieferzeit 21-28 Tag (e)
BSBINJ12128Global IndustrialDescription: JUMBO OPEN TOP WHITE CORRUGATED
Packaging: Box
Color: Oyster White
Material: Cardboard
Width: 12"
Height: 8"
Part Status: Active
Depth: 12"
Produkt ist nicht verfügbar
BSBINJ121810Global IndustrialDescription: JUMBO OPEN TOP WHITE CORRUGATED
Packaging: Box
Color: Oyster White
Material: Cardboard
Width: 12"
Height: 10"
Part Status: Active
Depth: 18"
Produkt ist nicht verfügbar
BSBINJ8128Global IndustrialDescription: JUMBO OPEN TOP WHITE CORRUGATED
Packaging: Box
Color: Oyster White
Material: Cardboard
Width: 8"
Height: 8"
Part Status: Active
Depth: 12"
Produkt ist nicht verfügbar
BSBN2-103AALPS07+
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
BSBN2-103AALPS07+
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)