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BUK9Y104-100B,115 BUK9Y104-100B,115 Nexperia USA Inc. BUK9Y104-100B.pdf Description: MOSFET N-CH 100V 14.8A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1139 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2103 Stücke:
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11+1.67 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
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BUK9Y19-75B,115 BUK9Y19-75B,115 Nexperia USA Inc. BUK9Y19-75B.pdf Description: MOSFET N-CH 75V 48.2A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14012 Stücke:
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10+2.35 EUR
50+1.77 EUR
100+1.58 EUR
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BUK9Y27-40B,115 BUK9Y27-40B,115 Nexperia USA Inc. BUK9Y27-40B.pdf Description: MOSFET N-CH 40V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 59.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1793 Stücke:
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16+1.1 EUR
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BUK9Y58-75B,115 BUK9Y58-75B,115 Nexperia USA Inc. BUK9Y58-75B.pdf Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5105 Stücke:
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14+1.3 EUR
50+0.96 EUR
100+0.85 EUR
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PBHV9050Z,115 PBHV9050Z,115 Nexperia USA Inc. PBHV9050Z.pdf Description: TRANS PNP 500V 0.25A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 700 mW
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1949 Stücke:
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23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
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PSMN011-80YS,115 PSMN011-80YS,115 Nexperia USA Inc. PSMN011-80YS.pdf Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 5154 Stücke:
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6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
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PSMN014-40YS,115 PSMN014-40YS,115 Nexperia USA Inc. PSMN014-40YS.pdf Description: MOSFET N-CH 40V 46A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 20 V
auf Bestellung 15130 Stücke:
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15+1.24 EUR
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PSMN016-100YS,115 PSMN016-100YS,115 Nexperia USA Inc. PSMN016-100YS.pdf Description: MOSFET N-CH 100V 51A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 15A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 50 V
auf Bestellung 2835 Stücke:
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6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 Nexperia USA Inc. PSMN017-60YS.pdf Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 3641 Stücke:
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7+2.66 EUR
11+1.67 EUR
50+1.25 EUR
100+1.11 EUR
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PSMN018-80YS,115 PSMN018-80YS,115 Nexperia USA Inc. PSMN018-80YS.pdf Description: MOSFET N-CH 80V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 3555 Stücke:
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18+1 EUR
100+0.76 EUR
500+0.72 EUR
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PSMN030-60YS,115 PSMN030-60YS,115 Nexperia USA Inc. PSMN030-60YS.pdf Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 2680 Stücke:
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15+1.22 EUR
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PSMN039-100YS,115 PSMN039-100YS,115 Nexperia USA Inc. PSMN039-100YS.pdf Description: MOSFET N-CH 100V 28.1A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1847 pF @ 50 V
auf Bestellung 707 Stücke:
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8+2.24 EUR
13+1.4 EUR
50+1.03 EUR
100+0.92 EUR
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PSMN3R3-40YS,115 PSMN3R3-40YS,115 Nexperia USA Inc. PSMN3R3-40YS.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V
auf Bestellung 19223 Stücke:
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10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
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PSMN5R8-40YS,115 PSMN5R8-40YS,115 Nexperia USA Inc. PSMN5R8-40YS.pdf Description: MOSFET N-CH 40V 90A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 20 V
auf Bestellung 8735 Stücke:
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14+1.3 EUR
100+0.84 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS,115 Nexperia USA Inc. PSMN7R0-60YS.pdf Description: MOSFET N-CH 60V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
auf Bestellung 53340 Stücke:
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10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
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BZX79-B20,143 BZX79-B20,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 20V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 43 Stücke:
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BZX79-B2V4,143 BZX79-B2V4,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 2.4V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 61 Stücke:
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53+0.33 EUR
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BZX79-B2V7,143 BZX79-B2V7,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 2.7V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
77+0.23 EUR
157+0.11 EUR
500+0.094 EUR
1000+0.065 EUR
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BZX79-B9V1,143 BZX79-B9V1,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 9.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 464 Stücke:
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63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
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BZX79-C10,143 BZX79-C10,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 10V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 4140 Stücke:
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72+0.25 EUR
124+0.14 EUR
350+0.05 EUR
500+0.047 EUR
1000+0.042 EUR
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BZX79-C13,143 BZX79-C13,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 13V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 4996 Stücke:
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105+0.17 EUR
147+0.12 EUR
169+0.1 EUR
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BZX79-C24,143 BZX79-C24,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 24V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
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500+0.059 EUR
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BZX79-C2V7,143 BZX79-C2V7,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 2.7V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 3787 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
179+0.099 EUR
375+0.047 EUR
500+0.044 EUR
1000+0.04 EUR
Mindestbestellmenge: 100
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BZX79-C6V2,143 BZX79-C6V2,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 6.2V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 225 Stücke:
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100+0.18 EUR
179+0.099 EUR
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BZX79-C6V8,143 BZX79-C6V8,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 6.8V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 192 Stücke:
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77+0.23 EUR
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BZX79-C9V1,143 BZX79-C9V1,143 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 9.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 4950 Stücke:
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1N4728A,113 1N4728A,113 Nexperia USA Inc. 1N4728A_SER.pdf Description: DIODE ZENER 3.3V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 1825 Stücke:
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55+0.32 EUR
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100+0.2 EUR
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1N4730A,113 1N4730A,113 Nexperia USA Inc. 1N4728A_SER.pdf Description: DIODE ZENER 3.9V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 7413 Stücke:
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222+0.08 EUR
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1N4738A,113 1N4738A,113 Nexperia USA Inc. 1N4728A_SER.pdf Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 15151 Stücke:
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1N4740A,113 1N4740A,113 Nexperia USA Inc. 1N4728A_SER.pdf Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
auf Bestellung 275 Stücke:
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1N4745A,113 1N4745A,113 Nexperia USA Inc. 1N4728A_SER.pdf Description: DIODE ZENER 16V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Produkt ist nicht verfügbar
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2N7002P,215 2N7002P,215 Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS21VD,135 BAS21VD,135 Nexperia USA Inc. BAS21VD.pdf Description: DIODE ARRAY GP 200V 200MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
32+0.56 EUR
50+0.4 EUR
100+0.35 EUR
Mindestbestellmenge: 20
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BAT86,113 BAT86,113 Nexperia USA Inc. BAT86.pdf Description: DIODE SCHOTTKY 50V 200MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 19622 Stücke:
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20+0.88 EUR
33+0.54 EUR
50+0.39 EUR
100+0.34 EUR
Mindestbestellmenge: 20
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BUK7214-75B,118 BUK7214-75B,118 Nexperia USA Inc. BUK7214-75B.pdf Description: MOSFET N-CH 75V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2612 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+2.13 EUR
100+1.66 EUR
500+1.41 EUR
1000+1.15 EUR
Mindestbestellmenge: 7
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BUK7227-100B,118 BUK7227-100B,118 Nexperia USA Inc. BUK7227-100B.pdf Description: MOSFET N-CH 100V 48A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6209 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+2.2 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.18 EUR
Mindestbestellmenge: 7
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BUK7611-55B,118 BUK7611-55B,118 Nexperia USA Inc. BUK7611-55B.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7626-100B,118 BUK7626-100B,118 Nexperia USA Inc. BUK7626-100B.pdf Description: MOSFET N-CH 100V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2891 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.87 EUR
10+2.48 EUR
100+1.69 EUR
Mindestbestellmenge: 5
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BUK9217-75B,118 BUK9217-75B,118 Nexperia USA Inc. BUK9217-75B.pdf Description: MOSFET N-CH 75V 64A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4029 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9606-40B,118 BUK9606-40B,118 Nexperia USA Inc. BUK9606-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK9608-55B,118 BUK9608-55B,118 Nexperia USA Inc. BUK9608-55B.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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4+5.03 EUR
10+3.26 EUR
100+2.25 EUR
Mindestbestellmenge: 4
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BUK9609-40B,118 BUK9609-40B,118 Nexperia USA Inc. BUK9609-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9612-55B,118 BUK9612-55B,118 Nexperia USA Inc. BUK9612-55B.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3693 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15341 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
10+2.37 EUR
100+1.69 EUR
Mindestbestellmenge: 6
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BUK9616-75B,118 BUK9616-75B,118 Nexperia USA Inc. BUK9616-75B.pdf Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6355 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
Mindestbestellmenge: 5
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BUK9620-100B,118 BUK9620-100B,118 Nexperia USA Inc. BUK9620-100B.pdf Description: MOSFET N-CH 100V 63A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
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BUK9629-100B,118 BUK9629-100B,118 Nexperia USA Inc. BUK9629-100B.pdf Description: MOSFET N-CH 100V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
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IP4234CZ6,125 IP4234CZ6,125 Nexperia USA Inc. IP4234CZ6.pdf Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 82537 Stücke:
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IP4256CZ5-W,115 IP4256CZ5-W,115 Nexperia USA Inc. IP4256CZ3-M_CZ5-W_CZ6-F.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 19pF (Total)
Height: 0.024" (0.60mm)
Attenuation Value: 20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
auf Bestellung 7209 Stücke:
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IP4256CZ6-F,115 IP4256CZ6-F,115 Nexperia USA Inc. IP4256CZ3-M_CZ5-W_CZ6-F.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Size / Dimension: 0.057" L x 0.039" W (1.45mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 19pF (Total)
Height: 0.020" (0.50mm)
Attenuation Value: 20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
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IP4283CZ10-TT,118 IP4283CZ10-TT,118 Nexperia USA Inc. IP4283CZ10_SER.pdf Description: TVS DIODE 5.5VWM 9.5VC 10TSSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 10-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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NZX10D,133 NZX10D,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 10.4V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 5532 Stücke:
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NZX24X,133 NZX24X,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 23.19V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 2065 Stücke:
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NZX33A,133 NZX33A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 31.9V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.9 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 16873 Stücke:
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142+0.12 EUR
Mindestbestellmenge: 53
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NZX36A,133 NZX36A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 34.95V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 34.95 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 9804 Stücke:
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NZX36B,133 NZX36B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 36.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36.05 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 933 Stücke:
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NZX36X,133 NZX36X,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 36.27V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36.27 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 7106 Stücke:
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59+0.3 EUR
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150+0.12 EUR
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NZX5V1A,133 NZX5V1A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 4.9V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 8616 Stücke:
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NZX6V8D,133 NZX6V8D,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 7.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 9994 Stücke:
Lieferzeit 10-14 Tag (e)
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NZX9V1A,133 NZX9V1A,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 8.7V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 13179 Stücke:
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84+0.21 EUR
127+0.14 EUR
249+0.071 EUR
500+0.064 EUR
1000+0.057 EUR
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5000+0.051 EUR
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PDTA144ET,235 PDTA144ET,235 Nexperia USA Inc. PDTA144E_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 9880 Stücke:
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100+0.18 EUR
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164+0.11 EUR
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BUK9Y104-100B,115 BUK9Y104-100B.pdf
BUK9Y104-100B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 14.8A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1139 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2103 Stücke:
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Anzahl Preis
11+1.67 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
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BUK9Y19-75B,115 BUK9Y19-75B.pdf
BUK9Y19-75B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 48.2A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14012 Stücke:
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Anzahl Preis
5+3.68 EUR
10+2.35 EUR
50+1.77 EUR
100+1.58 EUR
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BUK9Y27-40B,115 BUK9Y27-40B.pdf
BUK9Y27-40B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 59.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 959 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1793 Stücke:
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Anzahl Preis
10+1.76 EUR
16+1.1 EUR
100+0.72 EUR
500+0.56 EUR
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BUK9Y58-75B,115 BUK9Y58-75B.pdf
BUK9Y58-75B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 20.73A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 60.4W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5105 Stücke:
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Anzahl Preis
9+2.08 EUR
14+1.3 EUR
50+0.96 EUR
100+0.85 EUR
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PBHV9050Z,115 PBHV9050Z.pdf
PBHV9050Z,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 500V 0.25A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 700 mW
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
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PSMN011-80YS,115 PSMN011-80YS.pdf
PSMN011-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 5154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
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PSMN014-40YS,115 PSMN014-40YS.pdf
PSMN014-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 46A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 20 V
auf Bestellung 15130 Stücke:
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Anzahl Preis
9+1.97 EUR
15+1.24 EUR
50+0.91 EUR
100+0.81 EUR
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PSMN016-100YS,115 PSMN016-100YS.pdf
PSMN016-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 51A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 15A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 50 V
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 3641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.67 EUR
50+1.25 EUR
100+1.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PSMN018-80YS,115 PSMN018-80YS.pdf
PSMN018-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
auf Bestellung 3555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
18+1 EUR
100+0.76 EUR
500+0.72 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 2680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.22 EUR
50+0.9 EUR
100+0.8 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN039-100YS,115 PSMN039-100YS.pdf
PSMN039-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 28.1A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1847 pF @ 50 V
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.4 EUR
50+1.03 EUR
100+0.92 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R3-40YS,115 PSMN3R3-40YS.pdf
PSMN3R3-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V
auf Bestellung 19223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R8-40YS,115 PSMN5R8-40YS.pdf
PSMN5R8-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 20 V
auf Bestellung 8735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
14+1.3 EUR
100+0.84 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
auf Bestellung 53340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-B20,143 BZX79.pdf
BZX79-B20,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-B2V4,143 BZX79.pdf
BZX79-B2V4,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.4V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-B2V7,143 BZX79.pdf
BZX79-B2V7,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
157+0.11 EUR
500+0.094 EUR
1000+0.065 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-B9V1,143 BZX79.pdf
BZX79-B9V1,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C10,143 BZX79.pdf
BZX79-C10,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 4140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
124+0.14 EUR
350+0.05 EUR
500+0.047 EUR
1000+0.042 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C13,143 BZX79.pdf
BZX79-C13,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
147+0.12 EUR
169+0.1 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C24,143 BZX79.pdf
BZX79-C24,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 24V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
132+0.13 EUR
216+0.082 EUR
500+0.059 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C2V7,143 BZX79.pdf
BZX79-C2V7,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 3787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
179+0.099 EUR
375+0.047 EUR
500+0.044 EUR
1000+0.04 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C6V2,143 BZX79.pdf
BZX79-C6V2,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
179+0.099 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C6V8,143 BZX79.pdf
BZX79-C6V8,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
108+0.16 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C9V1,143 BZX79.pdf
BZX79-C9V1,143
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
114+0.15 EUR
161+0.11 EUR
185+0.095 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
1N4728A,113 1N4728A_SER.pdf
1N4728A,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 1825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
77+0.23 EUR
100+0.2 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
1N4730A,113 1N4728A_SER.pdf
1N4730A,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 7413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
152+0.12 EUR
222+0.08 EUR
500+0.069 EUR
1000+0.063 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
1N4738A,113 1N4728A_SER.pdf
1N4738A,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 15151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
73+0.24 EUR
100+0.21 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
1N4740A,113 1N4728A_SER.pdf
1N4740A,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
205+0.086 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
1N4745A,113 1N4728A_SER.pdf
1N4745A,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Produkt ist nicht verfügbar
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2N7002P,215 2N7002P.pdf
2N7002P,215
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS21VD,135 BAS21VD.pdf
BAS21VD,135
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 200V 200MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
50+0.4 EUR
100+0.35 EUR
Mindestbestellmenge: 20
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BAT86,113 BAT86.pdf
BAT86,113
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 50V 200MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
auf Bestellung 19622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
33+0.54 EUR
50+0.39 EUR
100+0.34 EUR
Mindestbestellmenge: 20
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BUK7214-75B,118 BUK7214-75B.pdf
BUK7214-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2612 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+2.13 EUR
100+1.66 EUR
500+1.41 EUR
1000+1.15 EUR
Mindestbestellmenge: 7
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BUK7227-100B,118 BUK7227-100B.pdf
BUK7227-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 48A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+2.2 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.18 EUR
Mindestbestellmenge: 7
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BUK7611-55B,118 BUK7611-55B.pdf
BUK7611-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7626-100B,118 BUK7626-100B.pdf
BUK7626-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2891 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.48 EUR
100+1.69 EUR
Mindestbestellmenge: 5
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BUK9217-75B,118 BUK9217-75B.pdf
BUK9217-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 64A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 185°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4029 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9606-40B,118 BUK9606-40B.pdf
BUK9606-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9608-55B,118 BUK9608-55B.pdf
BUK9608-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.26 EUR
100+2.25 EUR
Mindestbestellmenge: 4
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BUK9609-40B,118 BUK9609-40B.pdf
BUK9609-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9612-55B,118 BUK9612-55B.pdf
BUK9612-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3693 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.37 EUR
100+1.69 EUR
Mindestbestellmenge: 6
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BUK9616-75B,118 BUK9616-75B.pdf
BUK9616-75B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
Mindestbestellmenge: 5
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BUK9620-100B,118 BUK9620-100B.pdf
BUK9620-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 63A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5657 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK9629-100B,118 BUK9629-100B.pdf
BUK9629-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.62 EUR
100+1.79 EUR
Mindestbestellmenge: 5
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IP4234CZ6,125 IP4234CZ6.pdf
IP4234CZ6,125
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 82537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
50+0.51 EUR
100+0.45 EUR
Mindestbestellmenge: 16
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IP4256CZ5-W,115 IP4256CZ3-M_CZ5-W_CZ6-F.pdf
IP4256CZ5-W,115
Hersteller: Nexperia USA Inc.
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 19pF (Total)
Height: 0.024" (0.60mm)
Attenuation Value: 20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
auf Bestellung 7209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
89+0.2 EUR
103+0.17 EUR
109+0.16 EUR
Mindestbestellmenge: 72
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IP4256CZ6-F,115 IP4256CZ3-M_CZ5-W_CZ6-F.pdf
IP4256CZ6-F,115
Hersteller: Nexperia USA Inc.
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Size / Dimension: 0.057" L x 0.039" W (1.45mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 19pF (Total)
Height: 0.020" (0.50mm)
Attenuation Value: 20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
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IP4283CZ10-TT,118 IP4283CZ10_SER.pdf
IP4283CZ10-TT,118
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 9.5VC 10TSSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 3.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 10-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.5V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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NZX10D,133 NZX_SER.pdf
NZX10D,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10.4V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 5532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
90+0.2 EUR
125+0.14 EUR
145+0.12 EUR
Mindestbestellmenge: 56
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NZX24X,133 NZX_SER.pdf
NZX24X,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 23.19V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 2065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.2 EUR
128+0.14 EUR
147+0.12 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NZX33A,133 NZX_SER.pdf
NZX33A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 31.9V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.9 V
Impedance (Max) (Zzt): 120 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
auf Bestellung 16873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.2 EUR
123+0.14 EUR
142+0.12 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
NZX36A,133 NZX_SER.pdf
NZX36A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 34.95V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 34.95 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 9804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.2 EUR
128+0.14 EUR
147+0.12 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NZX36B,133 NZX_SER.pdf
NZX36B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36.05 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
90+0.2 EUR
126+0.14 EUR
145+0.12 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NZX36X,133 NZX_SER.pdf
NZX36X,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 36.27V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36.27 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 7106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
93+0.19 EUR
150+0.12 EUR
500+0.085 EUR
1000+0.075 EUR
2000+0.066 EUR
5000+0.057 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
NZX5V1A,133 NZX_SER.pdf
NZX5V1A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.9V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 8616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.2 EUR
124+0.14 EUR
143+0.12 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
NZX6V8D,133 NZX_SER.pdf
NZX6V8D,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.05V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.05 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 9994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.2 EUR
128+0.14 EUR
147+0.12 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NZX9V1A,133 NZX_SER.pdf
NZX9V1A,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.7V 500MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 13179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
127+0.14 EUR
249+0.071 EUR
500+0.064 EUR
1000+0.057 EUR
2000+0.054 EUR
5000+0.051 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
PDTA144ET,235 PDTA144E_SER.pdf
PDTA144ET,235
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 9880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
142+0.12 EUR
164+0.11 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
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