| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
| BAV99S-QF | NEXPERIA |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 200mA; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series x2 Features of semiconductor devices: fast switching Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry |
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BAV99W.115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Kind of package: reel; tape Features of semiconductor devices: fast switching |
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BAV99W-QX | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
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BAV99W,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: fast switching |
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| BAV99W-QF | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
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74HCT11DB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Technology: CMOS; TTL Kind of package: tube Operating temperature: -40...125°C |
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74HCT11PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Technology: CMOS; TTL Kind of package: reel; tape Operating temperature: -40...125°C Delay time: 36ns Quiescent current: 40µA |
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74HCT2G125DP,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2...6V DC Number of channels: 2 Kind of integrated circuit: buffer; line driver; non-inverting Kind of output: 3-state Family: HCT Technology: CMOS; TTL Type of integrated circuit: digital Case: TSSOP8 |
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| 74AHC2G125DC,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2...5.5V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AHC Technology: CMOS Type of integrated circuit: digital Case: VSSOP8 |
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| 74AHC2G125DP,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2...5.5V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AHC Technology: CMOS Type of integrated circuit: digital Case: TSSOP8 |
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| 74AUP2G125DC,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 0.8...3.6V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AUP Technology: CMOS Type of integrated circuit: digital Case: VSSOP8 |
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| 74AUP2G125GN,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 0.8...3.6V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AUP Technology: CMOS Type of integrated circuit: digital Case: XSON8 |
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| 74AUP2G125GS,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 0.8...3.6V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AUP Technology: CMOS Type of integrated circuit: digital Case: XSON8 |
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| 74AUP2G125GT,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 0.8...3.6V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AUP Technology: CMOS Type of integrated circuit: digital Case: XSON8 |
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| 74AHCT2G125DP,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; TTL; SMD; AHCT Mounting: SMD Manufacturer series: Mini Logic Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Number of inputs: 2 Number of channels: 2 Kind of integrated circuit: 3-state; buffer; line driver Kind of output: 3-state Family: AHCT Technology: TTL Type of integrated circuit: digital Case: TSSOP8 |
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| 74HCT4538D,118 | NEXPERIA |
Category: Multivibrators Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO16 Family: HCT Operating temperature: -40...125°C Kind of package: reel; tape |
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| 74HCT4538PW,118 | NEXPERIA |
Category: Multivibrators Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP16 Family: HCT Operating temperature: -40...125°C Kind of package: reel; tape |
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| BUK762R6-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 120A Power dissipation: 324W Pulsed drain current: 958A Application: automotive industry Case: D2PAK; SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 0.14µC On-state resistance: 5.6mΩ |
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| BUK764R2-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 120A Power dissipation: 324W Pulsed drain current: 713A Application: automotive industry Case: D2PAK; SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 136nC On-state resistance: 10.2mΩ |
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| BUK964R7-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W Gate-source voltage: ±10V Drain-source voltage: 80V Drain current: 120A Power dissipation: 324W Pulsed drain current: 667A Application: automotive industry Case: D2PAK; SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 92.1nC On-state resistance: 11.7mΩ |
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| 74HC365PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex,line driver; Ch: 1; IN: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex; line driver Case: TSSOP16 Operating temperature: -40...125°C Kind of package: reel; tape Mounting: SMD Supply voltage: 2...6V DC Number of inputs: 8 Kind of output: 3-state Technology: CMOS Family: HC Number of channels: 1 |
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NZH12B,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD123F; reel,tape; Ifmax: 250mA Semiconductor structure: single diode Power dissipation: 0.5W Mounting: SMD Kind of package: reel; tape Type of diode: Zener Max. load current: 0.25A Max. forward voltage: 0.9V Tolerance: ±2.5% Zener voltage: 12V Case: SOD123F |
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| PBSS5360PAS-QX | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 3A; 600mW; DFN2020D-3,SOT1061D Mounting: SMD Collector current: 3A Type of transistor: PNP Case: DFN2020D-3; SOT1061D Pulsed collector current: 6A Collector-emitter voltage: 60V Polarisation: bipolar Application: automotive industry Frequency: 120MHz Kind of package: reel; tape Power dissipation: 0.6W |
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| BZX84-C5V6.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 0.2A |
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PSMN1R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 255A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.15mΩ Mounting: SMD Gate charge: 121.35nC Kind of package: reel; tape Kind of channel: enhancement |
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PSMN1R8-40YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 272W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 15.5nC Kind of package: reel; tape Kind of channel: enhancement |
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PSMN1R5-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1301A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1301A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement |
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| PSMN1R1-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 1320A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 136nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN1R4-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1201A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 240A Pulsed drain current: 1201A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.38mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN1R2-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1237A Power dissipation: 215W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN1R5-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 202A Pulsed drain current: 1145A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R0-40ULDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Pulsed drain current: 1168A Power dissipation: 164W Case: SOT1023A Gate-source voltage: ±20V On-state resistance: 2.45mΩ Mounting: SMD Gate charge: 127nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: NextPowerS3 |
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| PSMN1R1-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 1318A Power dissipation: 215W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN1R0-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 216A; Idm: 1226A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 216A Pulsed drain current: 1226A Power dissipation: 160W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.43mΩ Mounting: SMD Gate charge: 71.8nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R0-40SSHJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 293A; Idm: 1659A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 293A Pulsed drain current: 1659A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R4-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1019A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.44mΩ Mounting: SMD Gate charge: 54.8nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN1R6-30MLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 116A Pulsed drain current: 656A Power dissipation: 106W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 152A Pulsed drain current: 860A Power dissipation: 135W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.11mΩ Mounting: SMD Gate charge: 46.7nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R7-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 167A Pulsed drain current: 944A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R8-30MLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 624A Power dissipation: 106W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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PSMN1R8-30PL,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1120A Power dissipation: 270W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement |
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| PSMN1R9-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Pulsed drain current: 919A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN1R9-80SSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 202A Pulsed drain current: 1142A Power dissipation: 340W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 232nC Kind of package: reel; tape Kind of channel: enhancement |
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| BZX84-C18.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 0.2A |
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PEMH13,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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PEMH13,315 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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|
|
BZX84-A12,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 12V; SMD; SOT23; reel,tape; Ifmax: 200mA Semiconductor structure: single diode Case: SOT23 Type of diode: Zener Max. load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±1% Zener voltage: 12V Kind of package: reel; tape Mounting: SMD |
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|
BCV46,215 | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 220MHz |
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| BCV46-QR | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.25W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 220MHz Application: automotive industry |
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| BAV99S-QF |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
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| BAV99W.115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAV99W-QX |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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| BAV99W,135 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAV99W-QF |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 150mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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| 74HCT11DB,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of package: tube
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of package: tube
Operating temperature: -40...125°C
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 238+ | 0.3 EUR |
| 74HCT11PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 36ns
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 36ns
Quiescent current: 40µA
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| 74HCT2G125DP,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Number of channels: 2
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Number of channels: 2
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: TSSOP8
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| 74AHC2G125DC,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHC
Technology: CMOS
Type of integrated circuit: digital
Case: VSSOP8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHC
Technology: CMOS
Type of integrated circuit: digital
Case: VSSOP8
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| 74AHC2G125DP,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHC
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP8
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| 74AUP2G125DC,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: VSSOP8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: VSSOP8
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| 74AUP2G125GN,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
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| 74AUP2G125GS,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
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| 74AUP2G125GT,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS; SMD
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AUP
Technology: CMOS
Type of integrated circuit: digital
Case: XSON8
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| 74AHCT2G125DP,125 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; TTL; SMD; AHCT
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHCT
Technology: TTL
Type of integrated circuit: digital
Case: TSSOP8
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; TTL; SMD; AHCT
Mounting: SMD
Manufacturer series: Mini Logic
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of channels: 2
Kind of integrated circuit: 3-state; buffer; line driver
Kind of output: 3-state
Family: AHCT
Technology: TTL
Type of integrated circuit: digital
Case: TSSOP8
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| 74HCT4538D,118 |
|
Hersteller: NEXPERIA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO16
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO16
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
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| 74HCT4538PW,118 |
|
Hersteller: NEXPERIA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; Ch: 2; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BUK762R6-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 958A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 5.6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 958A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 5.6mΩ
Produkt ist nicht verfügbar
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| BUK764R2-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 713A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 136nC
On-state resistance: 10.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 713A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 136nC
On-state resistance: 10.2mΩ
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| BUK964R7-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Gate-source voltage: ±10V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 667A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 92.1nC
On-state resistance: 11.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W
Gate-source voltage: ±10V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 324W
Pulsed drain current: 667A
Application: automotive industry
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 92.1nC
On-state resistance: 11.7mΩ
Produkt ist nicht verfügbar
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| 74HC365PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex,line driver; Ch: 1; IN: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; line driver
Case: TSSOP16
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Number of inputs: 8
Kind of output: 3-state
Technology: CMOS
Family: HC
Number of channels: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex,line driver; Ch: 1; IN: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; line driver
Case: TSSOP16
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Number of inputs: 8
Kind of output: 3-state
Technology: CMOS
Family: HC
Number of channels: 1
Produkt ist nicht verfügbar
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| NZH12B,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Semiconductor structure: single diode
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Max. forward voltage: 0.9V
Tolerance: ±2.5%
Zener voltage: 12V
Case: SOD123F
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Semiconductor structure: single diode
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Max. forward voltage: 0.9V
Tolerance: ±2.5%
Zener voltage: 12V
Case: SOD123F
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| PBSS5360PAS-QX |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 600mW; DFN2020D-3,SOT1061D
Mounting: SMD
Collector current: 3A
Type of transistor: PNP
Case: DFN2020D-3; SOT1061D
Pulsed collector current: 6A
Collector-emitter voltage: 60V
Polarisation: bipolar
Application: automotive industry
Frequency: 120MHz
Kind of package: reel; tape
Power dissipation: 0.6W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 600mW; DFN2020D-3,SOT1061D
Mounting: SMD
Collector current: 3A
Type of transistor: PNP
Case: DFN2020D-3; SOT1061D
Pulsed collector current: 6A
Collector-emitter voltage: 60V
Polarisation: bipolar
Application: automotive industry
Frequency: 120MHz
Kind of package: reel; tape
Power dissipation: 0.6W
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| BZX84-C5V6.215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
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| PSMN1R0-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 255A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.15mΩ
Mounting: SMD
Gate charge: 121.35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 255A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 255A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.15mΩ
Mounting: SMD
Gate charge: 121.35nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R8-40YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 15.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R5-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1301A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1301A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1301A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1301A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN1R1-40BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1320A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1320A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R4-40YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1201A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1201A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.38mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1201A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1201A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.38mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R2-30YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1237A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1237A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R5-40YSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Pulsed drain current: 1145A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 202A
Pulsed drain current: 1145A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R0-40ULDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 198A; Idm: 1168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1168A
Power dissipation: 164W
Case: SOT1023A
Gate-source voltage: ±20V
On-state resistance: 2.45mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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| PSMN1R1-25YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1318A; 215W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1318A
Power dissipation: 215W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R0-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 216A; Idm: 1226A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 216A
Pulsed drain current: 1226A
Power dissipation: 160W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.43mΩ
Mounting: SMD
Gate charge: 71.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 216A; Idm: 1226A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 216A
Pulsed drain current: 1226A
Power dissipation: 160W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.43mΩ
Mounting: SMD
Gate charge: 71.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R0-40SSHJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 293A; Idm: 1659A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 293A; Idm: 1659A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R4-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1019A; 166W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1019A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R6-30MLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 116A; Idm: 656A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R7-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R7-40YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 167A; Idm: 944A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 167A
Pulsed drain current: 944A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R8-30MLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 110A; Idm: 624A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 624A
Power dissipation: 106W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R8-30PL,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1120A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1120A
Power dissipation: 270W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN1R9-40YSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 162A; Idm: 919A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Pulsed drain current: 919A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN1R9-80SSEJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 202A; Idm: 1142A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 202A
Pulsed drain current: 1142A
Power dissipation: 340W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 232nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX84-C18.215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
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| PEMH13,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| PEMH13,315 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| BZX84-A12,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; SOT23; reel,tape; Ifmax: 200mA
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±1%
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; SOT23; reel,tape; Ifmax: 200mA
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±1%
Zener voltage: 12V
Kind of package: reel; tape
Mounting: SMD
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| BCV46,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
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| BCV46-QR |
|
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.25W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.25W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
Application: automotive industry
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