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NTF6P02T3G NTF6P02T3G onsemi ntf6p02t3-d.pdf Description: MOSFET P-CH 20V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
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NTGS3433T1G NTGS3433T1G onsemi ntgs3433t1-d.pdf Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Produkt ist nicht verfügbar
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NTGS3441T1G NTGS3441T1G onsemi ntgs3441t1-d.pdf Description: MOSFET P-CH 20V 1.65A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 5 V
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NTGS3443T1G NTGS3443T1G onsemi ntgs3443t1-d.pdf Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
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NTGS3455T1G NTGS3455T1G onsemi ntgs3455t1-d.pdf Description: MOSFET P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 5 V
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NTHD2102PT1G NTHD2102PT1G onsemi nthd2102p-d.pdf Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Produkt ist nicht verfügbar
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NTHD4102PT1G NTHD4102PT1G onsemi nthd4102p-d.pdf Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
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NTHD4401PT1G NTHD4401PT1G onsemi nthd4401p-d.pdf Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHD4N02FT1G NTHD4N02FT1G onsemi nthd4n02f-d.pdf Description: MOSFET N-CH 20V 2.9A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 910mW (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHD5903T1G NTHD5903T1G onsemi nthd5903t1-d.pdf Description: MOSFET 2P-CH 20V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHS5404T1G NTHS5404T1G onsemi nths5404t1-d.pdf Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Produkt ist nicht verfügbar
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NTHS5441T1G NTHS5441T1G onsemi nths5441t1-d.pdf Description: MOSFET P-CH 20V 3.9A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMD4N03R2G NTMD4N03R2G onsemi ntmd4n03r2-d.pdf Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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NTMD6N02R2G NTMD6N02R2G onsemi ntmd6n02r2-d.pdf Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Drain to Source Voltage (Vdss): 20V
Power - Max: 730mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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NTMD6N03R2G NTMD6N03R2G onsemi ntmd6n03r2-d.pdf Description: MOSFET 2N-CH 30V 6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMD6P02R2G NTMD6P02R2G onsemi ntmd6p02r2-d.pdf Description: MOSFET 2P-CH 20V 4.8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 750mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMS5P02R2G NTMS5P02R2G onsemi ntms5p02r2-d.pdf Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMS7N03R2G NTMS7N03R2G onsemi ntms7n03r2-d.pdf Description: MOSFET N-CH 30V 4.8A 8SOIC
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NTP13N10G NTP13N10G onsemi NTP13N10-D.pdf Description: MOSFET N-CH 100V 13A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64.7W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP18N06G NTP18N06G onsemi ntp18n06-d.pdf Description: MOSFET N-CH 60V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP18N06LG NTP18N06LG onsemi ntp18n06l-d.pdf Description: MOSFET N-CH 60V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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NTP30N06LG NTP30N06LG onsemi ntp30n06l-d.pdf Description: MOSFET N-CH 60V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP4302G NTP4302G onsemi ntp4302-d.pdf Description: MOSFET N-CH 30V 74A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP45N06G NTP45N06G onsemi NTP45N06 Rev1.pdf Description: MOSFET N-CH 60V 45A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP45N06LG NTP45N06LG onsemi ntp45n06l-d.pdf Description: MOSFET N-CH 60V 45A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP52N10G NTP52N10G onsemi ntp52n10-d.pdf Description: MOSFET N-CH 100V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP60N06G NTP60N06G onsemi NTP60N06%20Rev3.pdf Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
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NTP60N06LG NTP60N06LG onsemi ntp60n06l-d.pdf Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
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NTP75N03L09G NTP75N03L09G onsemi ntp75n03l09-d.pdf Description: MOSFET N-CH 30V 75A TO220AB
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTQD6866R2G NTQD6866R2G onsemi ntqd6866r2-d.pdf Description: MOSFET 2N-CH 20V 4.7A 8TSSOP
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NTQD6968NR2G NTQD6968NR2G onsemi ntqd6968n-d.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTR0202PLT1G NTR0202PLT1G onsemi ntr0202pl-d.pdf Description: MOSFET P-CH 20V 400MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTR1P02LT1G NTR1P02LT1G onsemi ntr1p02lt1-d.pdf Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTR1P02T1G NTR1P02T1G onsemi ntr1p02t1-d.pdf Description: MOSFET P-CH 20V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 5 V
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NTTS2P02R2G NTTS2P02R2G onsemi ntts2p02r2-d.pdf Description: MOSFET P-CH 20V 2.4A MICRO8
Produkt ist nicht verfügbar
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NUP2301MW6T1G NUP2301MW6T1G onsemi nup2301mw6t1-d.pdf Description: TVS DIODE 70VWM SC88/SC706
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Bidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
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NUP4301MR6T1G NUP4301MR6T1G onsemi nup4301mr6t1-d.pdf Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
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9000+0.1 EUR
15000+0.1 EUR
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NZQA5V6XV5T1G NZQA5V6XV5T1G onsemi nzqa5v6xv5t1-d.pdf Description: TVS DIODE 3VWM 10.5VC SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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NZQA6V8AXV5T1G NZQA6V8AXV5T1G onsemi nzqa5v6axv5-d.pdf Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
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PZT3904T1G PZT3904T1G onsemi pzt3904t1-d.pdf Description: TRANS NPN 40V 0.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
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SL05T1G SL05T1G onsemi sl05t1-d.pdf Description: TVS DIODE 5VWM 11VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SL15T1G SL15T1G onsemi sl05t1-d.pdf Description: TVS DIODE 15VWM 30VC SOT23-3
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SL24T1G SL24T1G onsemi sl05t1-d.pdf Description: TVS DIODE 24VWM 55VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 55V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SMBJ12AONT3G SMBJ12AONT3G onsemi SMBJ12AONT3-D.PDF Description: TVS DIODE 12VWM 19.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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SMF05CT1G SMF05CT1G onsemi smf05c-d.pdf Description: TVS DIODE 5VWM 12.5VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMF100AT1G SMF100AT1G onsemi SMF5.0AT1%20Series.pdf Description: TVS DIODE 100VWM 162VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF110AT1G SMF110AT1G onsemi SMF5.0AT1 Series.pdf Description: TVS DIODE 110VWM 177VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF12CT1G SMF12CT1G onsemi smf05c-d.pdf Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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3000+0.23 EUR
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SMF170AT1G SMF170AT1G onsemi SMF5.0AT1%20Series.pdf Description: TVS DIODE 170VWM 275VC SOD123FL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 275V
Voltage - Breakdown (Min): 189V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 170V
Current - Peak Pulse (10/1000µs): 600mA
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
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SMF40AT1G SMF40AT1G onsemi SMF5.0AT1_Series_Rev2.pdf Description: TVS DIODE 40VWM 64.5VC SOD123FL
Current - Peak Pulse (10/1000µs): 3.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 40V
Produkt ist nicht verfügbar
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SMF60AT1G SMF60AT1G onsemi SMF5.0AT1_Series_Rev2.pdf Description: TVS DIODE 60VWM 96.8VC SOD123FL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
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SMF90AT1G SMF90AT1G onsemi SMF5.0AT1_Series_Rev2.pdf Description: TVS DIODE 90VWM 146VC SOD123FL
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Produkt ist nicht verfügbar
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SMS05CT1G SMS05CT1G onsemi sms05c-d.pdf Description: TVS DIODE 5VWM 14.5VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
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SMS12CT1G SMS12CT1G onsemi sms05c-d.pdf Description: TVS DIODE 12VWM 23VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Last Time Buy
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SMS15CT1G SMS15CT1G onsemi sms05c-d.pdf Description: TVS DIODE 15VWM 29VC 6TSOP
Voltage - Clamping (Max) @ Ipp: 29V
Voltage - Breakdown (Min): 17V
Unidirectional Channels: 5
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 95pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 350W
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SMS15T1G SMS15T1G onsemi sms05t1-d.pdf Description: TVS DIODE 15VWM 29VC SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 350W
Power Line Protection: No
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SMS24CT1G SMS24CT1G onsemi sms05c-d.pdf Description: TVS DIODE 24VWM 44VC 6TSOP
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 5
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 60pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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9000+0.21 EUR
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SMS24T1G SMS24T1G onsemi sms05t1-d.pdf Description: TVS DIODE 24VWM 44VC SC74
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 4
Supplier Device Package: SC-74
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 40pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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TCA0372BDP1G TCA0372BDP1G onsemi TCA0372%28B%29%2CNCV0372B.pdf Description: IC POWER 2 CIRCUIT 8DIP
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 8-PDIP
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Produkt ist nicht verfügbar
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TCA0372BDWR2G TCA0372BDWR2G onsemi tca0372-d.pdf Description: IC POWER 2 CIRCUIT 16SOIC
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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1000+1.18 EUR
2000+1.14 EUR
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NTF6P02T3G ntf6p02t3-d.pdf
NTF6P02T3G
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
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4000+0.54 EUR
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NTGS3433T1G ntgs3433t1-d.pdf
NTGS3433T1G
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Produkt ist nicht verfügbar
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NTGS3441T1G ntgs3441t1-d.pdf
NTGS3441T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.65A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 5 V
auf Bestellung 18421 Stücke:
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AnzahlPrivatkunde
17+1.3 EUR
23+0.93 EUR
100+0.65 EUR
500+0.5 EUR
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NTGS3443T1G ntgs3443t1-d.pdf
NTGS3443T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
auf Bestellung 35131 Stücke:
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14+1.57 EUR
22+0.96 EUR
100+0.63 EUR
500+0.48 EUR
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NTGS3455T1G ntgs3455t1-d.pdf
NTGS3455T1G
Hersteller: onsemi
Description: MOSFET P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 5 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
6000+0.36 EUR
9000+0.33 EUR
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NTHD2102PT1G nthd2102p-d.pdf
NTHD2102PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Produkt ist nicht verfügbar
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NTHD4102PT1G nthd4102p-d.pdf
NTHD4102PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
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3000+0.76 EUR
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NTHD4401PT1G nthd4401p-d.pdf
NTHD4401PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHD4N02FT1G nthd4n02f-d.pdf
NTHD4N02FT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.9A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 910mW (Tj)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHD5903T1G nthd5903t1-d.pdf
NTHD5903T1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A CHIPFET
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHS5404T1G nths5404t1-d.pdf
NTHS5404T1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Produkt ist nicht verfügbar
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NTHS5441T1G nths5441t1-d.pdf
NTHS5441T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.9A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMD4N03R2G ntmd4n03r2-d.pdf
NTMD4N03R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 13850 Stücke:
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AnzahlPrivatkunde
2500+0.54 EUR
5000+0.5 EUR
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NTMD6N02R2G ntmd6n02r2-d.pdf
NTMD6N02R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.92A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Drain to Source Voltage (Vdss): 20V
Power - Max: 730mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.61 EUR
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NTMD6N03R2G ntmd6n03r2-d.pdf
NTMD6N03R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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NTMD6P02R2G ntmd6p02r2-d.pdf
NTMD6P02R2G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 4.8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 750mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMS5P02R2G ntms5p02r2-d.pdf
NTMS5P02R2G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMS7N03R2G ntms7n03r2-d.pdf
NTMS7N03R2G
Hersteller: onsemi
Description: MOSFET N-CH 30V 4.8A 8SOIC
Produkt ist nicht verfügbar
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NTP13N10G NTP13N10-D.pdf
NTP13N10G
Hersteller: onsemi
Description: MOSFET N-CH 100V 13A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64.7W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP18N06G ntp18n06-d.pdf
NTP18N06G
Hersteller: onsemi
Description: MOSFET N-CH 60V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP18N06LG ntp18n06l-d.pdf
NTP18N06LG
Hersteller: onsemi
Description: MOSFET N-CH 60V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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NTP30N06LG ntp30n06l-d.pdf
NTP30N06LG
Hersteller: onsemi
Description: MOSFET N-CH 60V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP4302G ntp4302-d.pdf
NTP4302G
Hersteller: onsemi
Description: MOSFET N-CH 30V 74A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP45N06G NTP45N06 Rev1.pdf
NTP45N06G
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP45N06LG ntp45n06l-d.pdf
NTP45N06LG
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP52N10G ntp52n10-d.pdf
NTP52N10G
Hersteller: onsemi
Description: MOSFET N-CH 100V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTP60N06G NTP60N06%20Rev3.pdf
NTP60N06G
Hersteller: onsemi
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
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NTP60N06LG ntp60n06l-d.pdf
NTP60N06LG
Hersteller: onsemi
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
Produkt ist nicht verfügbar
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NTP75N03L09G ntp75n03l09-d.pdf
NTP75N03L09G
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A TO220AB
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NTQD6866R2G ntqd6866r2-d.pdf
NTQD6866R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 4.7A 8TSSOP
Produkt ist nicht verfügbar
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NTQD6968NR2G ntqd6968n-d.pdf
NTQD6968NR2G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTR0202PLT1G ntr0202pl-d.pdf
NTR0202PLT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 400MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 18079 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
35+0.62 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.24 EUR
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NTR1P02LT1G ntr1p02lt1-d.pdf
NTR1P02LT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
38+0.56 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.17 EUR
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NTR1P02T1G ntr1p02t1-d.pdf
NTR1P02T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 5 V
auf Bestellung 20786 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
49+0.44 EUR
100+0.33 EUR
500+0.26 EUR
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NTTS2P02R2G ntts2p02r2-d.pdf
NTTS2P02R2G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8
Produkt ist nicht verfügbar
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NUP2301MW6T1G nup2301mw6t1-d.pdf
NUP2301MW6T1G
Hersteller: onsemi
Description: TVS DIODE 70VWM SC88/SC706
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Bidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
auf Bestellung 31965 Stücke:
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39+0.55 EUR
61+0.35 EUR
100+0.32 EUR
500+0.31 EUR
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NUP4301MR6T1G nup4301mr6t1-d.pdf
NUP4301MR6T1G
Hersteller: onsemi
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
auf Bestellung 45500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.12 EUR
9000+0.1 EUR
15000+0.1 EUR
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NZQA5V6XV5T1G nzqa5v6xv5t1-d.pdf
NZQA5V6XV5T1G
Hersteller: onsemi
Description: TVS DIODE 3VWM 10.5VC SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.23 EUR
8000+0.21 EUR
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NZQA6V8AXV5T1G nzqa5v6axv5-d.pdf
NZQA6V8AXV5T1G
Hersteller: onsemi
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.18 EUR
8000+0.17 EUR
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PZT3904T1G pzt3904t1-d.pdf
PZT3904T1G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
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SL05T1G sl05t1-d.pdf
SL05T1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 11VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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SL15T1G sl05t1-d.pdf
SL15T1G
Hersteller: onsemi
Description: TVS DIODE 15VWM 30VC SOT23-3
Produkt ist nicht verfügbar
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SL24T1G sl05t1-d.pdf
SL24T1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 55VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 55V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
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SMBJ12AONT3G SMBJ12AONT3-D.PDF
SMBJ12AONT3G
Hersteller: onsemi
Description: TVS DIODE 12VWM 19.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF05CT1G smf05c-d.pdf
SMF05CT1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 12.5VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMF100AT1G SMF5.0AT1%20Series.pdf
SMF100AT1G
Hersteller: onsemi
Description: TVS DIODE 100VWM 162VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF110AT1G SMF5.0AT1 Series.pdf
SMF110AT1G
Hersteller: onsemi
Description: TVS DIODE 110VWM 177VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMF12CT1G smf05c-d.pdf
SMF12CT1G
Hersteller: onsemi
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SMF170AT1G SMF5.0AT1%20Series.pdf
SMF170AT1G
Hersteller: onsemi
Description: TVS DIODE 170VWM 275VC SOD123FL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 275V
Voltage - Breakdown (Min): 189V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 170V
Current - Peak Pulse (10/1000µs): 600mA
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF40AT1G SMF5.0AT1_Series_Rev2.pdf
SMF40AT1G
Hersteller: onsemi
Description: TVS DIODE 40VWM 64.5VC SOD123FL
Current - Peak Pulse (10/1000µs): 3.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 40V
Produkt ist nicht verfügbar
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SMF60AT1G SMF5.0AT1_Series_Rev2.pdf
SMF60AT1G
Hersteller: onsemi
Description: TVS DIODE 60VWM 96.8VC SOD123FL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 96.8V
Voltage - Breakdown (Min): 66.7V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 60V
Current - Peak Pulse (10/1000µs): 1.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF90AT1G SMF5.0AT1_Series_Rev2.pdf
SMF90AT1G
Hersteller: onsemi
Description: TVS DIODE 90VWM 146VC SOD123FL
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SOD-123FL
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 1.2A
Applications: General Purpose
Produkt ist nicht verfügbar
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SMS05CT1G sms05c-d.pdf
SMS05CT1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 14.5VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
auf Bestellung 22590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SMS12CT1G sms05c-d.pdf
SMS12CT1G
Hersteller: onsemi
Description: TVS DIODE 12VWM 23VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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SMS15CT1G sms05c-d.pdf
SMS15CT1G
Hersteller: onsemi
Description: TVS DIODE 15VWM 29VC 6TSOP
Voltage - Clamping (Max) @ Ipp: 29V
Voltage - Breakdown (Min): 17V
Unidirectional Channels: 5
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 95pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 350W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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SMS15T1G sms05t1-d.pdf
SMS15T1G
Hersteller: onsemi
Description: TVS DIODE 15VWM 29VC SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SMS24CT1G sms05c-d.pdf
SMS24CT1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 44VC 6TSOP
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 5
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 60pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SMS24T1G sms05t1-d.pdf
SMS24T1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 44VC SC74
Power Line Protection: No
Power - Peak Pulse: 350W
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 26.7V
Unidirectional Channels: 4
Supplier Device Package: SC-74
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Capacitance @ Frequency: 40pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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TCA0372BDP1G TCA0372%28B%29%2CNCV0372B.pdf
TCA0372BDP1G
Hersteller: onsemi
Description: IC POWER 2 CIRCUIT 8DIP
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 8-PDIP
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Produkt ist nicht verfügbar
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TCA0372BDWR2G tca0372-d.pdf
TCA0372BDWR2G
Hersteller: onsemi
Description: IC POWER 2 CIRCUIT 16SOIC
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.18 EUR
2000+1.14 EUR
3000+1.12 EUR
Mindestbestellmenge: 1000 Stücke
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